NE3511S02-A

HETERO JUNCTION FIELD EFFECT TRANSISTOR NU CE E 35 12 D K NE3511S02 2 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • X to Ku-band DBS LNB • Other X to Ku-band communication systems TI ORDERING INFORMATION Order Number Package NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) NE3511S02-T1D NE3511S02-T1D-A Quantity Marking en t: Part Number 2 kpcs/reel B O Re p N 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape lac em Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit VDS 4 V VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 µA 165 mW Tch +125 °C Tstg −65 to +125 °C SC Drain to Source Voltage Gate to Source Voltage Total Power Dissipation In Channel Temperature D D I Storage Temperature Ptot Note ro p- Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N) NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Drain to Source Voltage VDS Drain Current ID Input Power Pin MIN. TYP. MAX. Unit 1 2 3 V 5 10 20 mA − − 0 dBm 2 Symbol NU CE E 35 12 D K Parameter ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Gate to Source Leak Current IGSO Saturated Drain Current IDSS Gate to Source Cutoff Voltage VGS (off) gm Noise Figure NF Associated Gain Ga MIN. TYP. MAX. Unit VGS = −3 V − 0.5 10 µA VDS = 2 V, VGS = 0 V 20 40 70 mA VDS = 2 V, ID = 100 µA −0.2 −0.7 −1.7 V VDS = 2 V, ID = 10 mA 50 65 − mS VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.30 0.45 dB 12.5 13.5 − dB en t: lac em ro p- D D I In SC O Re p N TI Transconductance Test Conditions 2 Data Sheet PG10642EJ01V0DS NE3511S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NU CE E 35 12 D K 100 250 200 150 100 50 2 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 80 Drain Current ID (mA) Total Power Dissipation Ptot (mW) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 VGS = 0 V 40 –0.2 V 20 –0.4 V –0.6 V 0 50 100 150 200 Ambient Temperature TA (˚C) 250 1.0 0 2.0 Drain to Source Voltage VDS (V) 80 60 20 0 –2.0 lac em 40 O Re p N Drain Current ID (mA) VDS = 2 V en t: TI DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE –1.0 0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 1.4 Ga 1.2 0.8 0.6 0.4 0.2 ro p- 1.0 2 4 6 NFmin 8 10 12 15 10 5 0.0 0 20 14 0 16 18 20 Minimum Noise Figure NFmin (dB) In 1.6 25 VDS = 2 V ID = 10 mA Associated Gain Ga (dB) 1.8 D D I Minimum Noise Figure NFmin (dB) 2.0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.6 16 f = 12 GHz 1.4 VDS = 2 V 14 1.2 12 Ga 1.0 10 0.8 8 6 0.6 NFmin 0.4 4 Associated Gain Ga (dB) SC Gate to Source Voltage VGS (V) 2 0.2 0.0 0 Frequency f (GHz) 5 10 15 20 0 25 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10642EJ01V0DS 3 NE3511S02 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a Click here to download S-parameters. NU CE E 35 12 D K microwave circuit simulator without keyboard input. en t: lac em ro p- D D I In SC O Re p N TI URL http://www.ncsd.necel.com/microwave/index.html 4 Data Sheet PG10642EJ01V0DS 2 [RF and Microwave] → [Device Parameters] NE3511S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) NU CE E 35 12 D K 2.80 2.60 2 2.06 0.64 13.0 en t: TI 0.54 0.74 2.06 1.7 mm/R.P. 2.6 1.7 φ 0.3 TH 1.7 Reference Plane (Calibration Plane) lac em O Re p N Reference Plane (Calibration Plane) 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz ro p- D D I In SC L2–uX Ver. 1 Data Sheet PG10642EJ01V0DS 5 NE3511S02 PACKAGE DIMENSIONS NU CE E 35 12 D K S02 (UNIT: mm) (Bottom View) 2 (Top View) 3.2±0.2 0.65 TYP. 0.5 TYP. B 2 2.2±0.2 1 1 2.6±0.1 2.2±0.2 4 4 2 3 3 2.2±0.2 lac em O Re p N 0.15±0.05 1.5 MAX. 1.7 en t: TI (Side View) PIN CONNECTIONS 1. 2. 3. 4. Source Drain Source Gate ro p- D D I In SC 3.2±0.2 6 Data Sheet PG10642EJ01V0DS NE3511S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 2 Soldering Method NU CE E 35 12 D K methods and conditions other than those recommended below, contact your nearby sales office. HS350 en t: lac em ro p- D D I In SC O Re p N TI Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10642EJ01V0DS 7 NE3511S02 GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. NU CE E 35 12 D K Caution • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 2 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. ro p- D D I In en t: lac em SC O Re p N TI • Do not lick the product or in any way allow it to enter the mouth. 2 I en N t: U CE E 35 12 D K 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. O Re pla N c T This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Lead (Pb) Mercury Concentration Limit per RoHS (values are not yet fixed) em Restricted Substance per RoHS < 1000 PPM Concentration contained in CEL devices -A Not Detected < 1000 PPM Not Detected < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected < 1000 PPM Not Detected SC Cadmium PBDE -AZ (*) -In If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. ro p D D I Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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