NE3511S02-T1D-A

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • X to Ku-band DBS LNB • Other X to Ku-band communication systems ORDERING INFORMATION Part Number NE3511S02-T1C NE3511S02-T1D Order Number NE3511S02-T1C-A NE3511S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking B Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4 −3 IDSS 100 165 +125 −65 to +125 Unit V V mA µA mW °C °C Tch Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N) 2006 NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 20 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Symbol IGSO IDSS VGS (off) gm NF Ga VGS = −3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz Test Conditions MIN. − 20 −0.2 50 − 12.5 TYP. 0.5 40 −0.7 65 0.30 13.5 MAX. 10 70 −1.7 − 0.45 − Unit µA mA V mS dB dB 2 Data Sheet PG10642EJ01V0DS NE3511S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 100 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Total Power Dissipation Ptot (mW) 150 Drain Current ID (mA) 200 80 60 VGS = 0 V –0.2 V 20 –0.4 V –0.6 V 100 40 50 0 50 100 150 200 250 0 1.0 Drain to Source Voltage VDS (V) 2.0 Ambient Temperature TA (˚C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 VDS = 2 V Drain Current ID (mA) 60 40 20 0 –2.0 –1.0 Gate to Source Voltage VGS (V) 0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2.0 25 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.6 16 14 Ga 12 10 8 6 NFmin 4 2 0 5 10 15 20 0 25 Minimum Noise Figure NFmin (dB) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 Frequency f (GHz) NFmin Ga Associated Gain Ga (dB) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 15 10 5 0 16 18 20 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10642EJ01V0DS 3 Associated Gain Ga (dB) 20 Minimum Noise Figure NFmin (dB) VDS = 2 V ID = 10 mA f = 12 GHz 1.4 VDS = 2 V NE3511S02 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html 4 Data Sheet PG10642EJ01V0DS NE3511S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 1.7 mm/R.P. 2.06 0.74 0.54 2.6 Reference Plane (Calibration Plane) 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH L2–uX Ver. 1 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz 13.0 Data Sheet PG10642EJ01V0DS 5 NE3511S02 PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) 3.2±0.2 0.65 TYP. 1 2.2±0.2 1 (Bottom View) 0.5 TYP. 2.6±0.1 B 2 4 3 2.2±0.2 4 2 3 (Side View) 2.2±0.2 1.7 1.5 MAX. 0.15±0.05 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. Source Drain Source Gate 6 Data Sheet PG10642EJ01V0DS NE3511S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Condition Symbol IR260 For soldering Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10642EJ01V0DS 7 NE3511S02 • T he information in this document is current a s of October, 2 006. T he information is subject to change without notice. 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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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