NE461M02-T1-AZ

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz HIGH IP3: 37 dBm TYP at 1 GHz BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 C DESCRIPTION NEC's NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications. B E 0.8 MIN E 3.95±0.26 • OUTLINE DIMENSIONS (Units in mm) 2.45±0.1 • NE461M02 0.42 ±0.06 0.42 ±0.06 0.25±0.02 0.45 ±0.06 1.5 3.0 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS NE461M02 2SC5337 M02 TYP MAX ICBO Collector Cutoff Current at VCB = 20 V, IE = 0 µA 0.01 5.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 µA 0.03 5.0 hFE2 DC Current Gain at VCE = 10 V, IC = 50 mA 40 120 200 7.0 8.3 |S21E|2 NF1 PARAMETERS AND CONDITIONS UNITS Insertion Power Gain at VCE = 10 V, IC = 50 mA, f = 1 GHz dB Noise Figure 1 at VCE = 10 V, IC = 50 mA, f = 500 MHz3 dB MIN 1.5 3.5 dB 2.0 3.5 dB 59.0 NF2 Noise Figure 2 at VCE = 10 V, IC = 50 mA, f = 1 IM2 2nd Order Intermodulation Distortion VCE = 10 V, IC = 50 mA, Rs = RL = 75 Ω Pin = 105 dB µV/75 Ω, f1 = 190 MHz f2 = 90 MHz, f = f1 - f2 IM3 3rd Order Intermodulation Distortion VCE = 10 V, IC = 50 mA, Rs = RL = 75 Ω Pin = 105 dB µV/75 Ω, f1 = 190 MHz f2 = 200 MHz, f = 2 x f1 - f2 dB 82.0 GHz3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Rs = RL = 50 Ω, tuned. California Eastern Laboratories NE461M02 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 30 VCEO Collector to Emitter Voltage V 15 VEBO Emitter to Base Voltage V 3.0 mA 250 IC Collector Current PT Total Power Dissipation2 W 2.0 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER NE461M02-T1-AZ QUANTITY PACKAGING 1000 Tape & Reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA = 25°C) DC CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 300 0.5 mA 80 DC Current Gain, hFE Collector Current, IC (mA) VCE 10 V IB=0.6 mA 100 0.4 mA 60 0.3 mA 40 0.2 mA 100 50 20 0.1 mA 10 10 0 0.1 20 Collector to Emitter Voltage, VCE (V) 10 100 1000 Collector Current, Ic (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 5.0 VCE = 10 V f = 1 GHz 5 3 2 1 0.5 0.3 10 30 50 70 100 Collector Current, Ic (mA) f = 1.0 MHz Feedback Capacitance, CrE (pF) Gain Bandwidth Product, fT (GHz) 1 3.0 2.0 1.0 0.5 0.3 1 3 5 10 20 Collector to Base Voltage, VCB (V) 30 NE461M02 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN and MAXIMUM AVAILABLE GAIN vs. FREQUENCY 10 5 0 10 30 50 |S21E| Maximum Available Gain, MAG (dB) VCE = 10 V f = 1 GHz Insertion Power Gain, IS21E|2 (dB) Insertion Power Gain, IS21E|2 (dB) INSERTION POWER GAIN vs. COLLECTOR CURRENT MAG 20 10 VCE = 10 V IC = 50 MA 0 70 100 0.2 VCE = 10 V f = 1 GHz Noise Figure, NF (dB) 6 5 4 3 2 1 0 5 10 20 50 100 Collector Current, Ic (mA) 0.6 0.8 1.0 1.4 2.0 3RD ORDER INTERMODULATION DISTORTION 2ND ORDER INTERMODULATION DISTORTION (+) & 2ND ORDER INTERMODULATION DISTORTION (-) vs. COLLECTOR CURRENT 3rd Order Intermodulation Distortion, IM3 (dBc) 2nd Order Intermodulation Distortion, IM2+ (dBc) 2nd Order Intermodulation Distortion,IM2- (dBc) 7 0.4 Frequency, f (GHz) Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT 2 80 IM3 70 60 IM2+ IM250 40 VCE=10 V 30 10 IM3: Vo = 110 dB µV/75 Ω 2 tone each f = 2 x 190 MHz - 200 Mhz IM2+: Vo = 105 dB µV/75 Ω 2 tone each f = 90 MHz + 100 MHz IM2-: Vo 105 dB µV/75 Ω 2 tone each f = 190 MHz - 90 MHz 50 100 Collector Current, IC (mA) 300 NE461M02 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 0.1 GHz 150˚ 30˚ j10 S22 3 GHz 0 S11 3 GHz S21 3 GHz 180˚ 0 S12 0.1 GHz -j10 S11 0.1 GHz S22 0.1 GHz Coordinates in Ohms Frequency in GHz VCE = 10 V, IC = 50 mA -j100 -j25 NE461M02 VCE = 5 V, IC = 50 mA FREQUENCY -150˚ -120˚ S11 S21 GHz MAG ANG 0.603 0.615 0.618 0.616 0.612 0.607 0.602 0.596 0.588 0.581 0.572 0.563 0.553 0.544 0.535 0.527 -142.0 -165.0 178.5 168.9 161.2 154.4 148.0 142.0 136.2 130.6 125.0 119.6 114.0 108.4 102.7 97.0 -30˚ -60˚ -90˚ -j50 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0˚ S12 3 GHz S12 S22 MAG ANG MAG ANG MAG 22.351 11.847 6.043 4.072 3.089 2.506 2.123 1.858 1.661 1.514 1.397 1.307 1.232 1.169 1.118 1.074 109.2 95.2 83.2 75.1 68.2 61.8 55.8 50.2 44.9 39.8 35.1 30.3 25.9 21.6 17.5 13.4 0.031 0.042 0.066 0.092 0.119 0.146 0.172 0.198 0.224 0.250 0.275 0.300 0.325 0.349 0.373 0.396 47.3 52.4 60.8 63.4 63.4 62.2 60.4 58.2 55.9 53.3 50.6 47.8 44.9 41.9 38.8 35.6 0.456 0.345 0.309 0.307 0.310 0.315 0.321 0.328 0.335 0.341 0.347 0.353 0.359 0.363 0.369 0.373 K ANG -100.7 -129.0 -147.0 -152.1 -153.5 -153.6 -153.3 -152.8 -152.2 -151.7 -151.5 -151.4 -151.4 -151.8 -152.4 -153.3 MAG1 (dB) 0.50 0.77 0.97 1.04 1.06 1.07 1.07 1.06 1.06 1.05 1.04 1.03 1.02 1.01 1.00 1.00 28.6 24.5 19.6 15.3 12.7 10.8 9.3 8.2 7.3 6.5 5.9 5.4 5.0 4.6 4.5 4.3 VCE = 10 V, IC = 50 mA FREQUENCY S11 S21 GHz MAG ANG 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.599 0.602 0.601 0.599 0.596 0.591 0.586 0.581 0.573 0.566 0.557 0.549 0.540 0.531 0.523 0.515 -137.2 -162.2 179.8 169.8 161.9 155.0 148.5 142.4 136.6 131.0 125.5 120.1 114.5 108.9 103.2 97.5 S12 S22 MAG ANG MAG ANG MAG 23.210 12.353 6.307 4.248 3.220 2.609 2.208 1.929 1.722 1.568 1.444 1.349 1.269 1.202 1.148 1.101 109.9 95.7 83.5 75.4 68.4 62.1 56.1 50.5 45.2 40.1 35.3 30.5 26.1 21.8 17.6 13.5 0.031 0.042 0.066 0.091 0.117 0.144 0.169 0.195 0.220 0.245 0.270 0.295 0.319 0.342 0.366 0.388 48.0 51.4 60.0 62.8 63.0 61.9 60.2 58.1 55.8 53.3 50.7 48.0 45.1 42.2 39.1 36.0 0.455 0.335 0.295 0.292 0.295 0.301 0.309 0.317 0.325 0.333 0.340 0.347 0.354 0.360 0.366 0.372 K ANG -97.0 -125.3 -143.9 -149.2 -150.6 -150.7 -150.3 -149.7 -149.1 -148.6 -148.3 -148.2 -148.2 -148.6 -149.2 -150.1 MAG1 (dB) 0.48 0.75 0.97 1.03 1.06 1.07 1.07 1.06 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 28.7 24.7 19.8 15.6 12.9 11.0 9.6 8.4 7.5 6.7 6.1 5.6 5.2 4.8 4.8 4.5 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE461M02 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 0.1 GHz 150˚ 30˚ j10 S22 3 GHz S11 3 GHz 0 180˚ 0 S11 0.1 GHz -j10 S22 0.1 GHz Coordinates in Ohms Frequency in GHz VCE = 12 V, IC = 100 mA -j100 -j25 NE461M02 VCE = 10 V, IC = 100 mA FREQUENCY 0˚ S21 3 GHz -150˚ S21 MAG ANG 0.596 0.601 0.601 0.600 0.597 0.593 0.588 0.581 0.574 0.565 0.556 0.547 0.535 0.524 0.515 0.505 -144.8 -166.5 177.5 168.1 160.4 153.6 147.2 141.2 135.3 129.6 124.1 118.7 113.0 107.5 101.8 96.1 -30˚ -60˚ -90˚ S11 GHz S12 3 GHz -120˚ -j50 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 S12 0.1 GHz S12 S22 MAG ANG MAG ANG MAG 23.959 12.575 6.386 4.296 3.258 2.640 2.236 1.953 1.747 1.590 1.468 1.371 1.292 1.225 1.170 1.122 106.7 93.9 82.7 75.0 68.3 62.1 56.3 50.8 45.6 40.6 35.8 31.1 26.6 22.3 18.1 14.1 0.029 0.040 0.066 0.093 0.120 0.147 0.174 0.201 0.227 0.252 0.277 0.302 0.325 0.348 0.371 0.393 48.5 55.6 63.6 65.3 64.7 63.1 60.9 58.5 55.9 53.1 50.3 47.4 44.3 41.3 38.2 35.1 0.422 0.334 0.308 0.306 0.309 0.313 0.318 0.324 0.330 0.335 0.341 0.346 0.351 0.355 0.359 0.363 K ANG -108.4 -135.7 -152.0 -156.5 -157.7 -157.8 -157.4 -156.6 -155.7 -154.9 -154.2 -153.5 -153.0 -152.8 -152.8 -153.0 MAG1 (dB) 0.56 0.82 0.99 1.04 1.06 1.06 1.06 1.06 1.05 1.05 1.04 1.03 1.02 1.02 1.01 1.00 29.2 25.0 19.9 15.4 12.9 11.0 9.5 8.4 7.5 6.7 6.1 5.5 5.1 4.7 4.4 4.2 VCE = 12 V, IC = 100 mA FREQUENCY GHz 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 S11 MAG 0.596 0.598 0.597 0.595 0.592 0.588 0.583 0.576 0.568 0.560 0.550 0.540 0.530 0.520 0.510 0.502 S21 ANG -143.1 -165.5 178.0 168.4 160.6 153.7 147.3 141.3 135.5 129.9 124.4 119.0 113.5 107.9 102.3 96.7 MAG 24.061 12.640 6.417 4.313 3.268 2.647 2.241 1.957 1.750 1.593 1.471 1.373 1.294 1.228 1.172 1.123 S12 ANG 106.9 94.0 82.7 74.9 68.2 62.0 56.2 50.7 45.5 40.5 35.6 31.0 26.4 22.1 17.9 13.8 MAG 0.029 0.040 0.065 0.093 0.120 0.147 0.173 0.199 0.225 0.250 0.275 0.300 0.323 0.346 0.369 0.391 K MAG1 0.56 0.82 0.99 1.04 1.06 1.07 1.07 1.07 1.06 1.05 1.04 1.03 1.03 1.02 1.01 1.01 (dB) 29.3 25.0 19.9 15.4 12.8 11.0 9.5 8.3 7.4 6.6 6.0 5.5 5.0 4.6 4.4 4.1 S22 ANG 48.3 55.1 63.0 64.8 64.3 62.8 60.7 58.3 55.8 53.1 50.2 47.4 44.3 41.3 38.2 35.0 MAG 0.416 0.328 0.301 0.299 0.302 0.306 0.312 0.318 0.324 0.330 0.336 0.342 0.347 0.353 0.357 0.362 ANG -107.7 -135.1 -151.6 -156.2 -157.4 -157.4 -156.9 -156.1 -155.2 -154.3 -153.5 -152.8 -152.3 -152.0 -151.9 -152.2 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 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