NE5500179A

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 3.0 to 6.0 V OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.2 Max 1.5 ± 0.2 Source Source Gate 5.7 Max 0.6 ± 0.15 Drain 0.8 ± 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.4 ± 0.15 5.7 Max 0.9 ± 0.2 0.2 ± 0.1 0.8 Max 3.6 ± 0.2 Bottom View DESCRIPTION The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES • DIGITAL CORDLESS PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance Drain to Source Breakdown Voltage = 25°C) NE5500179A 79A UNITS nA nA V S V MIN 1.0 20 TYP 1.35 0.41 1.00 24 MAX 100 100 2.0 - TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 4.8 V, IDS = 1 mA VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A California Eastern Laboratories NE5500179A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C) SYMBOLS GL POUT IOP CHARACTERISTICS Linear Gain Output Power Operating Current Power Added Efficiency Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Linear Gain Output Power Operating Current Power Added Efficiency UNITS dB dBm mA % dB dBm mA % dBm mA dB dBm mA % dBm mA dB dBm mA % MIN — — — — — — — — — — — 28.5 — 47 — — — — — — TYP 13.0 24.5 170 50 13.5 26.5 210 52 27.0 260 14.0 29.5 300 55 30.0 350 14.5 31.5 380 55 — — — — — — — — — — — — f = 1.9 GHz, PIN = 20 dBm VDS = 4.8 V, VGS = 2.5 V f = 1.9 GHz, PIN = 0 dBm, VDS =6.0 V, IDQ = 100 mA POUT IOP f = 1.9 GHz, PIN = 22 dBm, VDS =6.0 V, IDQ = 100 mA f = 1.9 GHz, PIN = 18 dBm VDS = 3.5 V, VGS = 2.5 V f = 1.9 GHz, PIN = 0 dBm, VDS = 4.8 V, IDQ = 100 mA POUT(1) IOP(1) f = 1.9 GHz, PIN = 20 dBm, VDS = 4.8 V, IDQ = 100 mA — — — f = 1.9 GHz, PIN = 0 dBm, VDS = 3.5 V, IDQ = 100 mA POUT(1) IOP(1) f = 1.9 GHz, PIN = 18 dBm, VDS = 3.5 V, IDQ = 100 mA MAX — — — TEST CONDITIONS f = 1.9 GHz, PIN = 0 dBm, VDS = 3.0 V, IDQ = 100 mA f = 1.9 GHz, PIN = 15 dBm, VDS = 3.0 V, IDQ = 100 mA ηADD GL ηADD POUT(2) IOP(2) GL ηADD POUT(2) IOP(2) GL ηADD ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID ID PIN PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test)2 Input Power3 Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A A dBm W °C °C RATINGS 8.5 6 0.25 0.5 25 1.6 125 -55 to +125 ORDERING INFORMATION1 PART NUMBER NE5500179A-T1 QTY 1 Kpcs/Reel Note: 1. Embossed tape 12 mm wide. Gate pin faces perforation side of the tape. Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, TON = LMS. 3. Frequency = 1.9 GHz, VDS = 4.8 V. RECOMMENDED OPERATING CONDITIONS SYMBOLS VDS VGS ID PIN f TOP PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature Duty Cycle 50%, Ton1ms Frequency = 1.9 GHz, VDS = 4.8 V TEST CONDITIONS UNITS V V A dBm GHz ˚C MIN 3.0 0 — 21 1.6 -30 TYP 3.5 2.0 — 22 — 25 MAX 6.0 2.5 0.5 23 2.5 85 NE5500179A TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 3.0 VGS MAX = 10 V Step = 1.0 V 1000 VDS = 4.8 V (TA = 25°C) QUIESCENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 2.5 Quiescent Drain Current, IDQ (mA) 6 8 10 12 14 16 Drain Current, IDS (A) 100 2.0 1.5 10 1.0 1 0.5 0.0 0 2 4 0.1 1.0 1.5 2.0 2.5 3.0 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) Efficiency/Power Added Efficiency, η, ηADD (%) Drain Current, IDS (mA) VDS = 4.8 V IDQ = 100 mA f = 1.9 GHz PO = 29.8 dBm 400 POUT VDS = 4.8 V f = 1.9 GHz PIN = 20 dBm PMAX = 30.1 dBm 400 POUT IDS Output Power, POUT (dBm) 30 Output Power, POUT (dBm) 30 25 ID 20 300 29 300 200 100 28 200 η 15 η 27 ηADD 100 50 ηADD 26 0.0 1.0 APC 2.0 3.0 4.0 100 10 0 5 10 15 20 25 0 0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) Efficiency/Power Added Efficiency, η, ηADD (%) 30 Drain Current, IDS (mA) Output Power, POUT (dBm) Output Power, POUT (dBm) VDS = 3.5 V IDQ = 100 mA f = 1.9 GHz 500 PO = 26.8 dBm 28 VDS = 3.5 V f = 1.9 GHz PIN = 18 dBm PMAX = 27.2 dBm 400 POUT 25 POUT 20 ID 15 400 27 300 26 IDS 25 300 200 100 200 η 10 100 50 η 24 100 50 ηADD 5 0 5 10 15 20 25 0 0 ηADD APC 23 0.0 1.0 2.0 3.0 0 4.0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) Drain Current, IDS (mA) 100 500 Efficiency/Power Added Efficiency, η, ηADD (%) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE Drain Current, IDS (mA) 100 50 0 35 500 31 500 Efficiency/Power Added Efficiency, η, ηADD (%) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE NE5500179A TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE5500179A VDS = 4.8 V, IDS = 100 mA FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.884 0.792 0.757 0.747 0.746 0.751 0.756 0.772 0.777 0.785 0.796 0.804 0.814 0.820 0.827 0.832 0.833 0.846 0.843 0.850 0.851 0.854 0.861 0.857 0.870 0.870 0.867 0.870 0.873 0.882 ANG -69.6 -107.8 -127.4 -138.7 -146.2 -151.8 -155.6 -159.5 -162.3 -165.0 -167.7 -169.9 -172.4 -174.6 -176.8 -179.6 177.9 175.6 172.9 170.3 167.1 165.1 162.3 159.5 156.6 153.9 151.6 148.9 146.5 143.9 MAG 18.11 12.12 8.58 6.58 5.28 4.32 3.68 3.12 2.75 2.40 2.17 1.91 1.74 1.58 1.45 1.33 1.19 1.13 1.02 0.99 0.89 0.83 0.75 0.76 0.67 0.65 0.56 0.57 0.52 0.51 S21 ANG 135.5 112.3 98.8 89.4 82.1 76.2 70.9 65.9 61.3 58.2 53.7 51.4 46.4 44.3 39.7 38.4 34.6 31.6 28.3 27.1 23.3 21.4 16.9 15.5 13.8 12.0 9.0 3.9 4.7 2.7 MAG 0.037 0.049 0.052 0.052 0.052 0.050 0.048 0.048 0.045 0.043 0.040 0.038 0.036 0.035 0.035 0.031 0.030 0.028 0.025 0.024 0.021 0.019 0.017 0.017 0.015 0.016 0.010 0.010 0.007 0.008 S12 ANG 48.2 23.2 10.8 3.3 -4.1 -8.9 -12.6 -17.0 -22.1 -21.9 -26.9 -29.2 -30.5 -31.4 -36.6 -38.5 -38.3 -38.7 -38.1 -40.9 -42.9 -48.0 -43.6 -40.8 -49.0 -36.8 -33.0 -43.4 -18.3 -15.0 MAG 0.517 0.569 0.598 0.618 0.641 0.660 0.681 0.696 0.715 0.732 0.749 0.763 0.776 0.789 0.803 0.808 0.814 0.829 0.834 0.840 0.842 0.847 0.856 0.866 0.862 0.865 0.866 0.879 0.879 0.885 S22 ANG -85.0 -120.7 -136.5 -144.8 -149.8 -153.4 -156.2 -158.9 -161.0 -162.9 -164.9 -166.9 -169.1 -171.0 -172.7 -175.0 -176.7 -179.2 178.7 176.5 174.4 172.1 169.1 167.0 164.7 162.0 159.1 156.7 154.5 152.0 K 0.00 0.06 0.08 0.11 0.13 0.18 0.22 0.23 0.28 0.33 0.35 0.42 0.45 0.48 0.44 0.62 0.78 0.70 0.98 0.97 1.42 1.62 1.88 1.68 2.20 2.13 4.44 3.96 6.01 4.60 MAG1 (dB) 26.8 23.9 22.1 21.0 20.1 19.3 18.8 18.1 17.9 17.4 17.2 17.0 16.8 16.5 16.1 16.3 16.0 16.1 16.0 16.1 12.4 11.7 10.9 11.5 10.2 10.1 7.8 8.6 7.6 8.2 (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE5500179A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 1.7 Drain Gate 5.9 1.2 Source 0.5 6.1 0.5 0.5 Through hole φ 0.2 × 33 EXCLUSIVE NORTH AMERICAN AGENT FOR 1.0 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE