NE5510179A

PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm • SINGLE SUPPLY: 2.8 to 6.0 V • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX 4.2 Max OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.5 – 0.2 Source Source 5.7 Max 0.6 – 0.15 X Gate Drain 0.8 – 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.8 Max 3.6 – 0.2 5.7 Max 8 0.4 – 0.15 DESCRIPTION The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets • OTHERS: 1.6 - 2.0 GHz TDMA Applications ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS (ON) BVDSS CHARACTERISTICS Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source On Resistance Drain-to-Source Breakdown Voltage V = 25°C) NE5510179A 79A UNITS nA nA V S MIN TYP 0.9 – 0.2 MAX 100 100 0.2 – 0.1 TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A 1.0 1.35 0.82 0.5 2.0 20 24 California Eastern Laboratories NE5510179A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID ID PIN PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (continuous) Drain Current (Pulse Input Power3 Test)2 A dBm W °C °C UNITS V V RATINGS 8.5 6 A0.5 1.0 27 1.6 125 -55 to +125 RECOMMENDED OPERATING CONDITIONS SYMBOLS VDS VGS IDS PIN freq TOP PARAMETERS Drain to Supply Voltage Gate Supply Voltage Drain Current (Pulse Test)1 Input Power2 Operating Frequency Range Operating Temperature UNITS V V A dBm GHz °C TYP 3.5 2.0 – 22 – 25 MAX 6.0 2.5 0.5 23 2.0 85 Total Power Dissipation Channel Temperature Storage Temperature Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1ms. 3. Freq = 1.9 GHz, VDS = 3.5 V. Note: 1. Duty Cycle 50%, Ton = 1ms. 2. Freq = 1.9 GHz, VDS = 3.5 V. ORDERING INFORMATION1 PART NUMBER NE5510179A-T1 Note: QTY 1 K/Reel TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE CURRENT 6.0 VGS (MAX) = 10 V, Step = 1.0 V 5.0 (TA = 25°C) 1. Embossed tape 12 mm wide. Gate pin face to perforations side of the tape. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1000 VDS = 3.5 V Drain Current, IDQ (mA) 0 2 4 6 8 10 12 14 16 Drain Current, ID (A) 100 4.0 3.0 10 2.0 1 1.0 0.0 0 1.0 1.5 2.0 2.5 3.0 Drain to Source Current, VDS (V) Gate to Source Voltage, VGS (V) NE5510179A TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER 31 PO = 29.7 dBm (TA = 25°C) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE 31 PMAX = 30.1 dBm 1250 1250 Efficiency, Power Added Efficiency, η, ηADD% 26 VDS = 3.5 V, IDQ = 200 mA, freq = 1.9 GHz POUT 1000 30 VDS = 3.5 V, freq = 1.9 GHz, PIN = 22 dBm 1000 POUT 750 IDS 21 750 29 16 ID 500 η 250 ηADD 100 28 η 27 ηADD 26 0.0 APC 1.0 2.0 3.0 500 100 11 50 250 50 6 0 5 10 15 20 25 0 0 0 4.0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE Drain Current, IDS (mA) Efficiency, Power Added Efficiency, η, ηADD% 30 PO = 28.7 dBm 1250 1250 PMAX = 29.0 dBm Output Power, POUT (dBm) Output Power, POUT (dBm) 25 VDS = 2.8 V, IDQ = 200 mA, freq = 1.9 GHz POUT 1000 29 VDS = 2.8 V, freq = 1.9 GHz, PIN = 22 dBm 1000 POUT 750 20 750 28 Ids 15 ID 500 η 250 ηADD 100 27 η 26 ηADD 25 0.0 APC 1.0 2.0 3.0 500 100 10 50 250 50 5 0 0 5 10 15 20 25 0 0 4.0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) P.C.B. LAYOUT1 (Units in mm) 4.0 1.7 Drain Gate 5.9 1.2 Source 0.5 6.1 0.5 0.5 Through hole φ 0.2 × 33 1.0 Note: 1. Use rosin or other material to prevent solder from penetrating through-holes. Efficiency, Power Added Efficiency, η, ηADD% 30 30 Drain Current, IDS (mA) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER Efficiency, Power Added Efficiency, η, ηADD% Output Power, POUT (dBm) Drain Current, IDS (mA) Output Power, POUT (dBm) Drain Current, IDS (mA) NE5510179A TYPICAL SCATTERING PARAMETERS1 (TA = 25°C) Note: 1. This file and many other s-parameter files can be downloaded from www.cel.com NE5510179A VDS = 3.5 V, IDS = 200 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.83 0.80 0.80 0.81 0.82 0.82 0.83 0.85 0.85 0.86 0.87 0.88 0.88 0.89 0.89 0.90 0.90 0.91 0.90 0.91 0.91 0.91 0.92 0.91 0.91 0.92 0.91 0.92 0.92 0.92 ANG -121.10 -148.10 -158.20 -163.40 -166.80 -169.40 -171.40 -173.40 -175.00 -176.70 -178.40 180.00 178.00 176.50 174.90 172.90 170.90 169.30 167.00 165.10 162.20 160.80 158.30 156.10 153.50 151.50 149.10 147.10 145.00 142.90 MAG 13.84 7.49 4.96 3.67 2.90 2.32 1.96 1.63 1.43 1.23 1.10 0.96 0.86 0.78 0.71 0.65 0.57 0.54 0.49 0.47 0.42 0.39 0.35 0.35 0.31 0.30 0.26 0.27 0.24 0.24 S21 ANG 111.30 93.60 84.60 77.10 71.20 66.20 61.70 57.30 52.60 50.30 46.20 44.30 39.90 38.10 34.20 33.30 29.90 27.10 24.40 23.80 20.50 19.10 15.20 13.40 13.00 12.20 9.50 4.80 6.40 4.80 MAG 0.03 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.00 0.01 S12 ANG 23.50 6.70 -2.60 -8.30 -13.30 -17.20 -18.30 -22.70 -24.60 -24.60 -29.30 -27.90 -28.10 -29.10 -31.70 -35.20 -28.20 -23.90 -23.00 -15.10 -3.70 -4.10 6.00 13.90 15.10 31.80 45.00 48.10 62.00 57.70 MAG 0.65 0.71 0.74 0.75 0.77 0.79 0.80 0.81 0.83 0.84 0.85 0.86 0.87 0.88 0.88 0.89 0.89 0.90 0.90 0.91 0.90 0.91 0.92 0.92 0.92 0.92 0.91 0.94 0.92 0.93 S22 ANG -154.00 -164.80 -168.50 -170.50 -171.60 -172.70 -173.40 -174.60 -175.50 -176.70 -177.50 -178.90 179.80 178.40 177.60 175.80 174.70 172.50 171.20 169.50 167.80 166.00 163.50 162.00 160.60 157.90 155.70 153.50 152.40 150.20 K -0.13 -0.12 -0.04 0.07 0.10 0.24 0.34 0.38 0.50 0.59 0.61 0.83 0.90 0.91 0.89 1.27 1.75 1.66 2.29 1.98 4.25 4.63 4.77 3.34 5.26 4.70 5.87 2.45 4.02 2.75 MAG1 (dB) 26.50 23.60 21.80 20.60 19.60 19.00 18.60 18.00 17.80 17.30 17.20 17.00 16.80 16.60 16.20 13.50 11.40 12.20 10.50 11.10 8.60 8.50 7.90 8.30 7.00 6.60 5.00 7.60 5.30 6.60 (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE