3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 2.8 to 6.0 V
0.9 ± 0.2
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max 1.5 ± 0.2
Source Source Gate
5.7 Max 0.6 ± 0.15
Drain
0.8 ± 0.15 4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.8 Max 3.6 ± 0.2
0.4 ± 0.15 5.7 Max
0.2 ± 0.1
Bottom View
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES • OTHERS
ELECTRICAL CHARACTERISTICS (TA
PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance Drain to Source Breakdown Voltage
= 25°C) NE5510279A 79A
UNITS nA nA V S V
MIN 1.0 20
TYP 1.35 1.50 0.27 24
MAX 100 100 2.0 -
TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 4.8 V, IDS = 1 mA VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A
California Eastern Laboratories
NE5510279A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)
SYMBOLS GL POUT(1) IOP(1) CHARACTERISTICS Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Output Power at Lower Voltage Operating Current Linear Gain Output Power Operating Current Power Added Efficiency Linear Gain Output Power Operating Current Power Added Efficiency UNITS dB dBm mA % dBm mA dBm mA dB dBm mA % dB dBm mA % MIN — 31.0 — 37 — — — — — — — — 35.0 TYP 10.0 32.0 810 45 32.6 1,000 31.1 880 10.0 35.0 1,120 48 35.0 37.0 1,400 49 — — — — — — — — 35.0 f = 1.8 GHz, PIN = 10 dBm, VDS =6.0 V,IDQ = 400 mA POUT IOP f = 1.8 GHz, PIN = 30 dBm, VDS =6.0 V,IDQ = 400 mA f = 1.8 GHz, PIN = 25 dBm VDS = 3.5 V,VGS = 2.5 V f = 1.8 GHz, PIN = 25 dBm VDS = 2.8 V,VGS = 2.5 V f = 1.8 GHz, PIN = 10 dBm, VDS = 4.8 V,IDQ = 400 mA POUT IOP f = 1.8 GHz, PIN = 28 dBm, VDS = 4.8 V,IDQ = 400 mA MAX — — — TEST CONDITIONS f = 1.8 GHz, PIN = 10 dBm, VDS = 3.5 V,IDQ = 400 mA f = 1.8 GHz, PIN = 25 dBm, VDS = 3.5 V,IDQ = 400 mA
ηADD(1)
POUT(2) IOP(2) POUT(3) IOP(3) GL
ηADD
GL
ηADD
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS VDS VGS ID ID PIN PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test)2 Input Power3 Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A A dBm W °C °C RATINGS 8.5 6 1.0 2.0 30 2.4 125 -55 to +125
ORDERING INFORMATION
PART NUMBER NE5510279A-T1 QTY 1 Kpcs/Reel
Note: Embossed tape 12 mm wide. Gate pin faces perforation side of the tape.
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, ton = 1 ms. 3. Frequency = 1.8 GHz, VDS = 3.5 V.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VDS VGS ID PIN f TOP PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature Duty Cycle 50%, Ton1ms Frequency = 1.8 GHz, VDS = 3.5 V TEST CONDITIONS UNITS V V A dBm GHz ˚C MIN 2.8 0 — 24 1.6 -30 TYP 3.5 2.0 — 25 — 25 MAX 6.0 2.5 1.5 26 2.0 85
NE5510279A TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
12.0 VGS MAX = 10 V Step = 1.0 V
10000 VDS = 3.5 V
(TA = 25°C)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
10.0
Drain Current, IDQ (mA)
0 2 4 6 8 10 12 14 16
Drain Current, IDS (A)
1000
8.0
6.0
100
4.0
10
2.0
0.0
1 1.0 1.5 2.0 2.5 3.0
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Efficiency/Power Added Efficiency, η, ηADD (%)
Drain Current, IDS (mA)
PO = 32.0 dBm
PMAX = 32.6 dBm VDS = 3.5 V f = 1.8 GHz PIN = 25 dBm POUT
Output Power, POUT (dBm)
Output Power, POUT (dBm)
30
VDS = 3.5 V IDQ = 400 mA f = 1.8 GHz
2000 POUT 1500
32
2000
25
31 IDS
1500
20 ID
1000
100
30
1000
η
500 50
η
29 500 50
15
ηADD
10 5 10 15 20 25 30 0 0
ηADD
28 0.0 1.0 APC 2.0 3.0 4.0 0 0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
Efficiency/Power Added Efficiency, η, ηADD (%)
35 PMAX = 30.6 dBm
Drain Current, IDS (mA)
2500
32 PO = 31.1 dBm
Output Power, POUT (dBm)
Output Power, POUT (dBm)
30 VDS = 2.8 V IDQ = 400 mA f = 1.8 GHz 25 POUT
2000
31 POUT 30 VDS = 2.8 V f = 1.8 GHz PIN = 25 dBm
2000
1500
1500
IDS 29 1000
20 ID
1000
100
η
15 500 50
η
28 500 APC 27 0.0 1.0 2.0 3.0 50
ηADD
10 5 10 15 20 25 30 0 0
ηADD
0 4.0 0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
Drain Current, IDS (mA)
100
2500
Efficiency/Power Added Efficiency, η, ηADD (%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Drain Current, IDS (mA)
100
35
2500
33
2500
Efficiency/Power Added Efficiency, η, ηADD (%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE
NE5510279A TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE5510279A VD = 3.5 V, IDS = 400 mA
FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.889 0.872 0.871 0.871 0.873 0.880 0.884 0.897 0.905 0.919 0.930 0.923 0.919 0.918 0.918 0.920 0.918 0.927 0.922 0.923 0.928 0.926 0.929 0.925 0.928 0.933 0.930 0.929 0.931 0.933 ANG -149.7 -165.4 -170.9 -173.7 -175.6 -176.9 -177.9 -179.1 -179.9 178.1 175.9 174.2 172.9 171.8 170.6 168.9 167.5 166.2 164.1 162.6 159.9 158.6 156.6 154.5 152.2 150.4 148.4 146.2 144.4 142.6 MAG 8.66 4.41 2.91 2.13 1.69 1.37 1.17 0.99 0.87 0.77 0.69 0.60 0.54 0.48 0.44 0.41 0.36 0.35 0.31 0.30 0.26 0.25 0.22 0.22 0.20 0.20 0.16 0.17 0.16 0.15
S21 ANG 99.8 87.5 82.0 76.1 71.5 67.7 63.9 60.5 56.3 53.8 48.8 46.9 42.6 41.0 37.6 36.7 33.6 30.9 28.2 27.8 25.2 23.2 20.0 18.0 18.1 17.2 15.0 11.1 11.6 10.0 MAG 0.019 0.020 0.020 0.019 0.019 0.018 0.016 0.016 0.014 0.014 0.012 0.012 0.010 0.010 0.011 0.008 0.008 0.009 0.007 0.007 0.007 0.006 0.008 0.009 0.007 0.009 0.011 0.013 0.013 0.014
S12 ANG 14.6 3.4 -1.8 -4.1 -9.5 -11.8 -10.6 -10.2 -15.0 -7.8 -13.7 -11.0 -10.5 -4.7 -8.0 -5.5 4.3 12.5 20.9 32.4 48.5 36.8 50.0 45.1 61.4 56.3 70.0 59.4 74.0 67.5 MAG 0.854 0.861 0.875 0.869 0.886 0.886 0.893 0.898 0.914 0.928 0.938 0.927 0.923 0.922 0.924 0.927 0.922 0.935 0.932 0.942 0.928 0.938 0.935 0.945 0.941 0.938 0.933 0.952 0.937 0.950
S22 ANG -173.8 -177.7 -178.6 -179.6 179.7 179.2 178.9 178.0 177.8 176.0 174.8 172.9 171.8 170.6 170.1 168.7 167.9 165.9 164.9 163.0 161.8 160.0 157.6 156.2 154.5 152.5 150.3 148.1 146.9 145.0
K -0.50 -0.36 -0.25 -0.01 0.04 0.22 0.40 0.40 0.41 0.16 0.11 0.59 1.29 1.62 1.53 2.46 3.27 1.95 3.67 3.08 4.46 4.89 4.01 3.01 4.77 3.43 4.13 2.01 3.01 2.10
MAG1 (dB) 26.6 23.4 21.6 20.5 19.5 18.8 18.6 17.9 17.9 17.4 17.6 17.0 14.1 12.2 11.7 10.4 8.5 10.3 7.9 8.6 6.2 6.3 5.4 6.2 4.8 5.2 2.5 5.4 3.2 4.3
(K –
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE5510279A RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0 1.7
Drain
Gate
5.9
1.2
Source 0.5 6.1 0.5
0.5
Through hole φ 0.2 × 33
EXCLUSIVE NORTH AMERICAN AGENT FOR
1.0
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE
