NE5510279A-T1

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 2.8 to 6.0 V 0.9 ± 0.2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.2 Max 1.5 ± 0.2 Source Source Gate 5.7 Max 0.6 ± 0.15 Drain 0.8 ± 0.15 4.4 Max Gate 1.0 Max Drain 1.2 Max 0.8 Max 3.6 ± 0.2 0.4 ± 0.15 5.7 Max 0.2 ± 0.1 Bottom View DESCRIPTION The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance Drain to Source Breakdown Voltage = 25°C) NE5510279A 79A UNITS nA nA V S V MIN 1.0 20 TYP 1.35 1.50 0.27 24 MAX 100 100 2.0 - TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 4.8 V, IDS = 1 mA VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A California Eastern Laboratories NE5510279A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C) SYMBOLS GL POUT(1) IOP(1) CHARACTERISTICS Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Output Power at Lower Voltage Operating Current Linear Gain Output Power Operating Current Power Added Efficiency Linear Gain Output Power Operating Current Power Added Efficiency UNITS dB dBm mA % dBm mA dBm mA dB dBm mA % dB dBm mA % MIN — 31.0 — 37 — — — — — — — — 35.0 TYP 10.0 32.0 810 45 32.6 1,000 31.1 880 10.0 35.0 1,120 48 35.0 37.0 1,400 49 — — — — — — — — 35.0 f = 1.8 GHz, PIN = 10 dBm, VDS =6.0 V,IDQ = 400 mA POUT IOP f = 1.8 GHz, PIN = 30 dBm, VDS =6.0 V,IDQ = 400 mA f = 1.8 GHz, PIN = 25 dBm VDS = 3.5 V,VGS = 2.5 V f = 1.8 GHz, PIN = 25 dBm VDS = 2.8 V,VGS = 2.5 V f = 1.8 GHz, PIN = 10 dBm, VDS = 4.8 V,IDQ = 400 mA POUT IOP f = 1.8 GHz, PIN = 28 dBm, VDS = 4.8 V,IDQ = 400 mA MAX — — — TEST CONDITIONS f = 1.8 GHz, PIN = 10 dBm, VDS = 3.5 V,IDQ = 400 mA f = 1.8 GHz, PIN = 25 dBm, VDS = 3.5 V,IDQ = 400 mA ηADD(1) POUT(2) IOP(2) POUT(3) IOP(3) GL ηADD GL ηADD ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID ID PIN PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test)2 Input Power3 Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A A dBm W °C °C RATINGS 8.5 6 1.0 2.0 30 2.4 125 -55 to +125 ORDERING INFORMATION PART NUMBER NE5510279A-T1 QTY 1 Kpcs/Reel Note: Embossed tape 12 mm wide. Gate pin faces perforation side of the tape. Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, ton = 1 ms. 3. Frequency = 1.8 GHz, VDS = 3.5 V. RECOMMENDED OPERATING CONDITIONS SYMBOLS VDS VGS ID PIN f TOP PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature Duty Cycle 50%, Ton1ms Frequency = 1.8 GHz, VDS = 3.5 V TEST CONDITIONS UNITS V V A dBm GHz ˚C MIN 2.8 0 — 24 1.6 -30 TYP 3.5 2.0 — 25 — 25 MAX 6.0 2.5 1.5 26 2.0 85 NE5510279A TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12.0 VGS MAX = 10 V Step = 1.0 V 10000 VDS = 3.5 V (TA = 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 10.0 Drain Current, IDQ (mA) 0 2 4 6 8 10 12 14 16 Drain Current, IDS (A) 1000 8.0 6.0 100 4.0 10 2.0 0.0 1 1.0 1.5 2.0 2.5 3.0 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) Efficiency/Power Added Efficiency, η, ηADD (%) Drain Current, IDS (mA) PO = 32.0 dBm PMAX = 32.6 dBm VDS = 3.5 V f = 1.8 GHz PIN = 25 dBm POUT Output Power, POUT (dBm) Output Power, POUT (dBm) 30 VDS = 3.5 V IDQ = 400 mA f = 1.8 GHz 2000 POUT 1500 32 2000 25 31 IDS 1500 20 ID 1000 100 30 1000 η 500 50 η 29 500 50 15 ηADD 10 5 10 15 20 25 30 0 0 ηADD 28 0.0 1.0 APC 2.0 3.0 4.0 0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) Efficiency/Power Added Efficiency, η, ηADD (%) 35 PMAX = 30.6 dBm Drain Current, IDS (mA) 2500 32 PO = 31.1 dBm Output Power, POUT (dBm) Output Power, POUT (dBm) 30 VDS = 2.8 V IDQ = 400 mA f = 1.8 GHz 25 POUT 2000 31 POUT 30 VDS = 2.8 V f = 1.8 GHz PIN = 25 dBm 2000 1500 1500 IDS 29 1000 20 ID 1000 100 η 15 500 50 η 28 500 APC 27 0.0 1.0 2.0 3.0 50 ηADD 10 5 10 15 20 25 30 0 0 ηADD 0 4.0 0 Input Power, PIN (dBm) Gate to Source Voltage, VGS (V) Drain Current, IDS (mA) 100 2500 Efficiency/Power Added Efficiency, η, ηADD (%) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE Drain Current, IDS (mA) 100 35 2500 33 2500 Efficiency/Power Added Efficiency, η, ηADD (%) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE NE5510279A TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE5510279A VD = 3.5 V, IDS = 400 mA FREQUENCY GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.889 0.872 0.871 0.871 0.873 0.880 0.884 0.897 0.905 0.919 0.930 0.923 0.919 0.918 0.918 0.920 0.918 0.927 0.922 0.923 0.928 0.926 0.929 0.925 0.928 0.933 0.930 0.929 0.931 0.933 ANG -149.7 -165.4 -170.9 -173.7 -175.6 -176.9 -177.9 -179.1 -179.9 178.1 175.9 174.2 172.9 171.8 170.6 168.9 167.5 166.2 164.1 162.6 159.9 158.6 156.6 154.5 152.2 150.4 148.4 146.2 144.4 142.6 MAG 8.66 4.41 2.91 2.13 1.69 1.37 1.17 0.99 0.87 0.77 0.69 0.60 0.54 0.48 0.44 0.41 0.36 0.35 0.31 0.30 0.26 0.25 0.22 0.22 0.20 0.20 0.16 0.17 0.16 0.15 S21 ANG 99.8 87.5 82.0 76.1 71.5 67.7 63.9 60.5 56.3 53.8 48.8 46.9 42.6 41.0 37.6 36.7 33.6 30.9 28.2 27.8 25.2 23.2 20.0 18.0 18.1 17.2 15.0 11.1 11.6 10.0 MAG 0.019 0.020 0.020 0.019 0.019 0.018 0.016 0.016 0.014 0.014 0.012 0.012 0.010 0.010 0.011 0.008 0.008 0.009 0.007 0.007 0.007 0.006 0.008 0.009 0.007 0.009 0.011 0.013 0.013 0.014 S12 ANG 14.6 3.4 -1.8 -4.1 -9.5 -11.8 -10.6 -10.2 -15.0 -7.8 -13.7 -11.0 -10.5 -4.7 -8.0 -5.5 4.3 12.5 20.9 32.4 48.5 36.8 50.0 45.1 61.4 56.3 70.0 59.4 74.0 67.5 MAG 0.854 0.861 0.875 0.869 0.886 0.886 0.893 0.898 0.914 0.928 0.938 0.927 0.923 0.922 0.924 0.927 0.922 0.935 0.932 0.942 0.928 0.938 0.935 0.945 0.941 0.938 0.933 0.952 0.937 0.950 S22 ANG -173.8 -177.7 -178.6 -179.6 179.7 179.2 178.9 178.0 177.8 176.0 174.8 172.9 171.8 170.6 170.1 168.7 167.9 165.9 164.9 163.0 161.8 160.0 157.6 156.2 154.5 152.5 150.3 148.1 146.9 145.0 K -0.50 -0.36 -0.25 -0.01 0.04 0.22 0.40 0.40 0.41 0.16 0.11 0.59 1.29 1.62 1.53 2.46 3.27 1.95 3.67 3.08 4.46 4.89 4.01 3.01 4.77 3.43 4.13 2.01 3.01 2.10 MAG1 (dB) 26.6 23.4 21.6 20.5 19.5 18.8 18.6 17.9 17.9 17.4 17.6 17.0 14.1 12.2 11.7 10.4 8.5 10.3 7.9 8.6 6.2 6.3 5.4 6.2 4.8 5.2 2.5 5.4 3.2 4.3 (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE5510279A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 1.7 Drain Gate 5.9 1.2 Source 0.5 6.1 0.5 0.5 Through hole φ 0.2 × 33 EXCLUSIVE NORTH AMERICAN AGENT FOR 1.0 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE