NE5520279A

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX. • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V A 0.4±0.15 5.7 MAX. 0.8±0.15 1.0 MAX. 0.8 MAX. 3.6±0.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS • DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets • 0.7-2.5 GHz FIXED WIRELESS ACCESS • W-LAN • SHORT RANGE WIRELESS • RETAIL BUSINESS RADIO • SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added Efficiency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % mA nA nA V S V °C/W 15 1.0 40 MIN 30.5 NE5520279A 79A TYP 32.0 10 45 800 100 100 1.4 1.3 18 8 1.9 VGS = 5.0 V VDS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 700 mA IDSS = 10 μA Channel-to-Case MAX TEST CONDITIONS f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain ηADD ID IGSS IDSS VTH gm BVDSS RTH Electrical DC Characteristics Notes: 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm 0.9±0.2 California Eastern Laboratories 0.2±0.1 1.2 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID ID PT TCH TSTG PARAMETERS UNITS V V A 2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS VGS IDS PIN PARAMETERS UNITS V V A dBm TYP 3.0 2.0 0.8 25 Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power f = 1.8 GHz, VDS = 3.2 V RATINGS 15.0 5.0 0.6 1.2 12.5 125 MAX 6.0 3.0 1.0 30 Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature A W °C °C -55 to +125 Note: 1. Duty Cycle ≤ 50%, Ton ≤ 1 s. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s. LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz) FREQUENCY (GHz) Zin (Ω) 1.77 −j6.71 ZOL (Ω) 1 1.25 −j5.73 ORDERING INFORMATION PART NUMBER NE5520279A-T1-A QTY 1.8 Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power. NE5520279A TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER Ids(mA) (TA = 25°C) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE 35 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Output Power, Pout (dBm) Pout Output Power, Pout (dBm) 30 1000 100 30 1000 IDS 100 25 IDS 20 ηd 750 75 25 ηd 20 750 75 ηadd 500 50 ηadd 500 50 15 250 25 15 250 25 10 5 10 15 20 25 30 0 0 10 0 1 2 3 4 0 0 Input Power,Pin (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER Ids(mA) Gate to Source Voltage, Vgs (V) IMD vs. TWO TONE OUTPUT POWER 2500 -10 f = 1.8 GHz ∆f = 1 MHz VDS = 3.2 V IDQ = 700 mA 35 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Output Power, Pout (dBm) 30 f = 1.8 GHz VDS = 3.2 V IDQ = 700 mA Pout 2000 100 -20 -30 ηd IDS IMD, (dBc) 25 1500 75 -40 -50 IM3 IM5 20 1000 50 ηadd 15 500 25 -60 -70 10 10 5 10 15 20 25 30 0 0 15 20 25 30 35 Input Power,Pin (dBm) Average Two Tone Ouput Power, Pout (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER Ids(mA) 40 OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE Ids(mA) 2500 Output Power, Pout (dBm) Output Power, Pout (dBm) 35 Pout Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 2000 100 35 Pout 2000 100 30 ηd 1500 75 30 ηd 1500 75 ηadd 25 IDS 1000 50 25 ηadd IDS 1000 50 20 500 25 20 500 25 15 10 15 20 25 30 0 35 0 15 0 1 2 3 4 0 0 Input Power,Pin (dBm) Gate to Source Voltage, Vgs (V) Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA 40 f = 2.00 GHz VDS = 5.0 V Pin = 27 dBm 2500 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) f = 1.8 GHz VDS = 3.2 V IDQ = 300 mA 1250 Pout Ids(mA) 35 f = 1.8 GHz VDS = 3.2 V Pin = 25 dBm 1250 NE5520279A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 S11 j100 120˚ 150˚ 90˚ S21 60˚ 30˚ j10 0 10 S22 25 50 100 0 180˚ S12 0˚ -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 400 mA -150˚ -30˚ -120˚ -90˚ -60˚ NE5520279A VD = 5.0 V, ID = 400 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 ANG -152.5 -166.9 -172.4 -175.6 -177.9 -179.8 178.7 177.3 176.0 174.6 173.6 172.2 171.0 169.9 168.7 167.5 166.3 165.2 164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149.6 MAG 11.510 5.882 3.896 2.897 2.278 1.865 1.569 1.346 1.168 1.024 0.911 0.812 0.728 0.655 0.594 0.541 0.494 0.451 0.415 0.384 0.356 0.329 0.305 0.285 0.267 0.248 0.232 0.217 0.204 0.192 0.180 0.170 0.161 0.152 0.144 S21 ANG 98.5 87.7 80.8 75.2 70.1 65.3 60.7 56.5 52.4 48.5 44.7 40.9 37.5 34.1 30.8 27.9 25.1 22.4 19.6 17.1 14.9 12.6 10.2 7.7 5.8 4.0 2.0 0.0 - 1.6 - 3.1 - 4.5 - 6.1 - 7.6 - 8.8 - 10.0 MAG 0.021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.003 S12 ANG 10.3 0.2 - 5.2 - 9.2 - 12.9 - 15.7 - 19.3 - 21.8 - 24.5 - 27.2 - 28.8 - 30.8 - 33.3 - 33.9 - 36.0 - 36.6 - 37.3 - 38.5 - 38.5 - 38.8 - 36.9 - 40.8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.953 0.952 0.954 0.958 0.961 0.960 0.960 0.964 0.965 0.963 S22 ANG -170.1 -175.4 -177.5 -178.5 -179.3 179.9 179.1 178.4 177.9 177.2 176.5 175.5 174.7 173.9 172.9 172.2 171.5 170.7 169.8 169.0 168.5 167.8 167.0 166.0 165.5 164.9 164.2 163.2 162.4 161.9 161.1 160.2 159.4 158.6 157.6 K 0.03 0.07 0.11 0.14 0.20 0.27 0.30 0.32 0.36 0.39 0.36 0.42 0.47 0.62 0.68 0.76 0.98 1.22 1.35 1.33 1.45 1.74 2.04 2.04 2.04 2.59 3.32 4.54 5.69 5.78 9.71 9.31 9.54 7.96 5.89 MAG1 (dB) 27.43 24.21 22.51 21.31 20.41 19.66 19.05 18.55 18.12 17.79 17.48 17.21 16.93 16.84 16.65 16.54 16.58 13.67 12.97 12.95 12.62 11.58 11.01 11.00 11.27 10.34 9.53 8.76 8.58 8.26 7.87 7.08 7.19 6.89 6.46 MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971 (K ± K 2 -1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| ,K= |S12| 1 + | ∆ | 2 - |S11| 2 - |S22| 2 2 |S12 S21| , ∆ = S11 S22 - S21 S12 MAG = Maximum Available Gain MSG = Maximum Stable Gain NE5520279A APPLICATION CIRCUIT (2.40-2.48 GHz) VG C3 C9 C11 P1 J3 P.C.B. LAYOUT (Units in mm) 79A PACKAGE 4.0 VD J4 C2 C8 C10 1.7 GND Drain Gate 5.9 1.2 J1 IN R1 C5 C14 C15 OU A2 C6 98 U1 C1 J2 Source 0.5 6.1 0.5 0.5 RF IN C4 Through hole φ 0.2 × 33 RF OUT er=4.2 t=0.028 500855 5.74mm .30mm .63mm J3 +Vg J4 +Vd C13 C11 C9 C3 C2 C8 C10 C12 R1 C1 J1 RF INPUT C5 J2 RF OUTPUT NE5520279A C7 C14 C4 C15 NE5520279A PARTS LIST 1 1 4 2 1 1 1 1 2 1 2 2 2 1 1 1 2 1 SD-500881 TF-100637 MA101J MCR03J200 600S2R7CW 600S2R2BW 600S1R2BW 600S5R6CW 600S3R3CW TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520279A 703401 1250-003 2052-5636-02 FD-500855B C2,C3 R1 C4 C15 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB SCHEMATIC DIAGRAM NE5520279A-EVAL TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD CASE 1 100pF CAP MURATA 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 2.2pF CAP ATC 0805 1.2pF CAP ATC 0603 5.6pF CAP ATC 0603 3.3pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1.0 C13 C12 NE5520279A TYPICAL APPLICATION CIRCUIT PERFORMANCE OUTPUT POWER vs. INPUT POWER 36 34 32 (TA = 25°C) -20.0 f= 2.44 GHz -20.0 -20.0 -25.0 IM3 vs. OUTPUT POWER f= 2.44 GHz Output Power, POUT (dBm) IM3 (dBc) 30 28 26 24 22 20 3.6 V, 300 mA 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 500 mA -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 12 3.6 V, 300 mA 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 300 mA 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 14 16 18 20 22 24 26 28 30 Input Power, PIN (dBm) Output Power, POUT (dBm), Each Tone NE5520279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260 VPS VP215 Wave Soldering WS260 Partial Heating HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 09/03/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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