NE6500379A

NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 2.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS 5.7 MAX 0.6 – 0.15 4.2 MAX OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.5 – 0.2 Source Source Gate Drain 0.8 – 0.15 4.4 MAX E • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5 C/W T 9 0.4 – 0.15 5.7 MAX 1.0 MAX 0.8 MAX 3.6 – 0.2 0.2 – 0.1 DESCRIPTION NEC's NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures Note: Unless otherwise specified, tolerance is ±0.2 mm ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS Power Out at 1dB Gain Compression Linear Gain1 Power Added Efficiency Drain Current Saturated Drain Current Pinch-Off Voltage Thermal Resistance Gate-to-Drain Breakdown Voltage = 25°C) NE6500379A 79A UNITS dBm dB % A A V °C/W V 17 -3.6 9.0 MIN TYP 35.0 10.0 50 1.0 4.5 -2.6 5 -1.6 6 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 21 mA Channel to Case IGD = 21 mA f = 1.9 GHz, VDS = 6.0 V Rg = 30 Ω IDSQ = 500 mA (RF OFF)2 MAX TEST CONDITIONS Functional Characteristics P1dB GL ηADD ID Electrical DC Characteristics IDSS VP RTH BVGD Notes: 1. Pin = 0 dBm 2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. 0.9 – 0.2 BOTTOM VIEW California Eastern Laboratories 1.2 MAX • HIGH OUTPUT POWER: 35 dBm TYP X Gate Drain NE6500379A ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) SYMBOLS VDS VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A mA W °C °C RATINGS 15 -7.0 5.6 50 21 150 -65 to +150 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression UNITS V °C dB TYP 6.0 MAX 6.0 125 3.0 ORDERING INFORMATION PART NUMBER NE6500379A-T1 NE6500379A QTY 1 K/Reel Bulk, 50 piece min. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 (TA = 25°C) DRAIN CURRENT vs. DRAIN VOLTAGE 5 Total Power Dissipation, PD (W) 22 W VGS = 4 0V 20 Drain Current, ID (A) 15 RTH = 6 °C/W 10 3 -0.50 V 2 -1.0 V -1.5 V 1 -2.0 V 5 0 0 18 °C 50 100 150 0 0 1 2 3 4 5 6 Case Temperature, TC (°C) Drain Voltage, VD (V) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE 2.00 1.00 25.0 MAXIMUM AVAILABLE GAIN vs. FREQUENCY 0.8 Maximum Available Gain, GMAG (dB) Transconductance, GM (mS) 20.0 Drain Current, ID (A) 3V 300 mA 8V 500 mA 0.6 1.00 0.4 15.0 6V 500 mA 10.0 0.5 0.2 0.00 -3.50 0.00 -1.50 5.0 0.1 0.2 0.4 0.6 1.0 2.0 4.0 Gate Voltage, VG (V) Frequency, f (GHz) NE6500379A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 S11 4.0 GHz S22 4.0 GHz 90˚ j100 120˚ 60˚ S12 0.5 GHz S21 0.5 GHz S12 4.0 GHz S21 4.0 GHz 150˚ 30˚ j10 0 10 S11 0.5 GHz S22 0.5 GHz 25 50 100 0 180˚ 0˚ -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VD = 3.0 V, ID = 300 mA -150˚ -30˚ -120˚ -90˚ -60˚ NE6500379A VD = 6.0 V, ID = 500 mA FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.966 0.967 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.965 0.966 0.966 0.966 0.966 0.967 0.968 0.967 0.968 0.968 0.969 0.969 0.970 0.970 0.970 0.971 0.970 0.972 0.971 0.971 0.973 0.974 0.973 0.974 0.973 0.974 ANG -174.30 -177.11 -179.62 178.38 176.58 174.96 173.44 172.10 170.80 169.61 168.44 167.32 166.26 165.26 164.32 163.43 162.52 161.56 160.76 160.00 159.26 158.55 157.78 157.08 156.48 155.74 155.08 154.43 153.91 153.33 152.84 152.20 151.72 151.28 150.86 150.75 MAG 2.139 1.783 1.531 1.343 1.192 1.072 0.975 0.895 0.825 0.765 0.716 0.672 0.632 0.596 0.566 0.540 0.513 0.488 0.468 0.450 0.432 0.413 0.397 0.385 0.372 0.359 0.346 0.336 0.327 0.316 0.308 0.301 0.292 0.282 0.273 0.266 S21 ANG 85.82 82.99 80.36 78.11 75.93 73.74 71.58 69.70 67.81 65.81 63.89 62.25 60.58 58.64 56.79 55.24 53.75 51.90 50.11 48.58 47.36 45.84 44.14 42.59 41.43 40.09 38.46 37.25 35.97 34.75 33.35 32.01 30.79 29.50 27.94 27.01 MAG 0.014 0.014 0.014 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.015 0.016 0.016 0.015 0.015 0.015 0.015 0.016 0.016 0.015 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.019 S12 ANG 10.23 9.64 10.32 10.26 10.85 11.62 11.65 12.25 12.72 12.90 13.20 13.85 14.68 14.92 15.56 15.70 17.08 16.80 17.63 18.37 19.74 19.89 20.56 21.83 23.56 24.26 25.44 27.74 29.52 31.71 33.06 32.99 32.12 33.04 31.76 32.12 MAG 0.880 0.881 0.881 0.882 0.881 0.880 0.881 0.881 0.880 0.879 0.881 0.881 0.880 0.877 0.880 0.882 0.880 0.876 0.876 0.881 0.881 0.878 0.877 0.882 0.883 0.881 0.879 0.885 0.885 0.882 0.882 0.884 0.883 0.880 0.877 0.886 S22 ANG 176.31 175.27 174.08 173.23 172.33 171.34 170.32 169.56 168.73 167.80 166.90 166.23 165.51 164.64 163.73 163.14 162.60 161.72 160.81 160.18 159.90 159.26 158.32 157.46 157.13 156.56 155.69 154.96 154.33 153.69 152.89 152.34 151.99 151.43 150.64 150.34 K 0.32 0.36 0.45 0.50 0.56 0.64 0.69 0.73 0.80 0.84 0.86 0.92 1.00 1.06 1.08 1.08 1.13 1.22 1.27 1.26 1.29 1.34 1.42 1.41 1.44 1.47 1.57 1.54 1.61 1.68 1.56 1.48 1.54 1.54 1.61 1.52 MAG1 (dB) 21.74 20.93 20.24 19.66 19.12 18.65 18.17 17.77 17.41 17.04 16.75 16.46 16.22 14.46 13.97 13.70 13.00 12.19 11.72 11.55 11.19 10.76 10.32 10.16 9.88 9.56 9.04 9.03 8.55 8.13 8.21 8.14 7.76 7.53 7.12 7.23 (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE6500379A NONLINEAR MODEL SCHEMATIC LGX GATE 0.001 nH 0.68 nH LG Q1 RDX 0.2 ohms RDBX 480 ohms LD 0.55 nH LDX 0.015 nH DRAIN CGS PKG 0.1 pF CBSX 100 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO (3) (1) LSX 0.001 nH SOURCE Q1 -2.585 0 3 1.28 0 0.035 1.7 0.02 0.6 1e-14 1 0 0 10e-12 0.5e-12 0.001 0 25e-12 4.5e-12 1 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0.2 0.001 0.001 0 0 1 27 3 1.43 0 0 1 MODEL RANGE Frequency: 0.4 to 8 GHz Bias: VDS = 3 V to 8 V, ID = 300 mA to 500 mA Date: 8/03 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms CGDO(4) DELTA1 DELTA2 FC VBR (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD NE6500379A APPLICATION CIRCUIT (1.93 - 1.99 GHz) VG J3 C3 C9 C11 P1 GND VD J4 C2 C8 C10 C13 RFIN J1 C5 TC 7X C12 RFOUT J2 R2R1 C6 C1 C4 U1 100637 NE6500379A-EV Contact CEL Engineering for artwork and more detailed information. .034 J3 VG C13 C11 C9 C3 L = .890 W = .010 R6 NE650379A C1 C6 L = .200 W = .050 C5 C4 L = .140 W = .050 C7 Er = 4.2 H = .028" L = .874 W = .010 C2 C8 C10 C12 J4 VD J1 RF Input J2 RF Output C14 NE6500379A PARTS LIST 1 4 2 1 2 1 1 1 1 2 2 2 1 1 1 2 TF-100637 MA101J MCR03J200 100A470CP150X 100A4R3CP150X 100A5R6CP150X 100A0R5CP150X 100A0R8CP150X TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE6500379A 703401 1250-003 2052-5636-02 C2, C3 R1 C1, C14 C4 C5 C6 C7 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1100 pF CAP MURATA 0603 20 OHMS RESISTOR ROHM CASE A 47 pF CAP ATC CASE A 4.3 pF CAP ATC CASE A 5.6 pF CAP ATC CASE A 0.5 pF CAP ATC CASE A 0.8 pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1 uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 NE6500379A P.C.B. LAYOUT (Units in mm) FOR 79A PACKAGE 4.0 1.7 Drain Gate 5.9 1.2 Source Through hole φ 0.2 × 33 0.5 6.1 0.5 TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V GAIN AND PAE vs. OUTPUT POWER 14 12 FC = 1.96 GHz, VDS = 3 V 0.5 1.0 GAIN AND PAE vs. OUTPUT POWER 60 14 12 FC = 1.96 GHz, VDS = 6 V 60 50 50 10 10 Gain, GA (dB) Gain, GA (dB) 40 40 8 30 6 20 4 8 30 6 20 4 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA PAE (%) 2 0 20 22 24 26 28 10 2 0 20 22 24 26 28 30 0 34 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA 10 0 30 32 32 34 36 Output Power, POUT (dBm) GAIN AND SATURATION POWER vs. FREQUENCY 16 POUT = 10 dBm for Gain, 23 dBm for PSAT, VDS = 3 V Output Power, POUT (dBm) GAIN AND SATURATION POWER vs. FREQUENCY 31.50 16 POUT = 17 dBm for Gain, 30 dBm for PSAT, VDS = 6 V 37 14 Saturation Power, PSAT (dBm) 30.50 14 36 12 29.50 12 35 10 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA 28.50 10 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA 34 8 1.90 1.92 1.94 1.96 1.98 2.00 27.50 2.02 8 1.90 1.92 1.94 1.96 1.98 2.00 33 2.02 Frequency, f (GHz) Frequency, f (GHz) Saturation Power, PSAT (dBm) Gain, GA (dB) Gain, GA (dB) PAE (%) NE6500379A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER Third Order Intermodulation Distortion, IM3 (dBc) -15 Third Order Intermodulation Distortion, IM3 (dBc) FC = 1.96 GHz, VDS = 3 V -20 FC = 1.96 GHz, VDS = 6 V -20 -25 -25 -30 -30 -35 -35 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -40 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -40 -45 -45 23 24 25 26 27 28 29 30 31 32 33 -50 23 25 27 29 31 33 Total Output Power, POUT (dBm) ACPR vs. OUTPUT POWER Total Output Power, POUT (dBm) ACPR vs. OUTPUT POWER -35 ACPR1 885KHz -35 FC = 1.96 GHz, VDS = 6 V 64 CH IS95 CDMA ACPR1 885KHz -40 -40 -45 ACPR (dBc) ACPR (dBc) -45 -50 ACPR2 885KHz -50 ACPR2 125MHz -55 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -55 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA -60 FC = 1.96 GHz, VDS 64 CH IS95 CDMA -60 = 3V 27 28 29 30 -65 -65 23 24 25 26 31 32 33 23 25 27 29 31 33 35 Total Output Power, POUT (dBm) Total Output Power, POUT (dBm) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/04/2002 A Business Partner of NEC Compound Semiconductor Devices, Ltd.