NE650103M-A

NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • HIGH OUTPUT POWER: 40 dBm TYP • HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz • LOW THERMAL RESISTANCE: 4.0° C/W • LEAD-FREE 2-φ 3.3 ± 0.3 GATE 13.8 ± 0.35 4.2 ± 0.4 5.84 ± 0.2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 3M 20.32 ± 0.15 14.27 ± 0.15 3.5 ± 0.2 DESCRIPTION NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures DRAIN 8.54 ± 0.2 2.04 ± 0.3 0.15 ± 0.05 SOURCE ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL CHARACTERISTICS Power Out at 1dB Gain Compression Linear Gain (at Pin ≤ 23 dBm) Power Added Efficiency Saturated Drain Current Pinch-Off Voltage Thermal Resistance = 25°C) NE650103M 3M UNITS dBm dB % A V °C/W 2.0 -4.0 MIN 39.0 10.0 TYP 40.0 11.0 45 5.0 -2.5 4.0 7.0 -1.0 4.5 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 23 mA Channel to Case f = 2.3 GHz, VDS = 10.0 V Rg = 100 Ω IDSQ ≤ 1.5 A (RF OFF) MAX TEST CONDITIONS Functional Characteristics ηADD IDSS VP RTH Electrical DC Characteristics California Eastern Laboratories 1.8 ± 0.3 NE650103M ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) SYMBOLS VDS VGD VGS IDS IGF PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W °C °C RATINGS 15 -18 -7.0 5 45 33 175 -65 to +150 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP Rg PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS V °C dB Ω TYP 10.0 MAX 10.0 150 3.0 100 ORDERING INFORMATION PART NUMBER NE650103M-A PACKAGE 3M Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 10 9 8 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Total Power Dissipation, PD (W) IDS = 1 A/Div VDS = 0.5 V/Div VGS = -0.5 V 33 W 30 25 RE Drain Current, (A) 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS = 0 V VGS = -0.5 V VGS = -1.0 V VGS = -1.5 V VGS = -2.0 V VGS = -2.5 V AB SO T LU CO 20 E M AX IM DE UM M EN M 15 D 10 0 0 18 43 50 100 150 175 200 Drain To Source Voltage, (V) Case Temperature, TC (°C) NE650103M TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER AND POWER ADDED EFFICIENCY 45 OUTPUT POWER AND POWER ADDED EFFICIENCY 100 45 Output Power, POUT (dBm) Output Power, POUT (dBm) 40 80 Pout Power Added Efficiency, PAE (%) 40 80 35 60 35 60 30 PAE 40 30 40 25 20 20 0 25 20 15 0 5 10 15 20 25 0 0 -20 20 10 15 20 25 30 35 0 Input Power, PIN (dBm) Input Power, PIN (dBm) OUTPUT POWER AND POWER ADDED EFFICIENCY 45 Pout (IDSQ = 1 A) Pout (IDSQ = 1.5 A) Pout (IDSQ = 2 A) PAE (IDSQ = 1 A) PAE (IDSQ = 1.5 A) PAE (IDSQ = 2 A) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 100 Intermodulation Distortion, IM3 (dBc) Power Added Efficiency, PAE (%) f =1.96 GHz VDS = 10 V -20 -25 -30 -35 -40 -45 -50 -55 -60 20 25 30 VDS = 10 V, F1 = 1.9575 GHz F2 = 1.9575 GHz Output Power, POUT (dBm) 40 80 35 60 30 40 25 20 20 10 15 20 25 30 35 0 IDSQ = 1 A IDSQ = 1.5 A IDSQ = 2 A 35 40 Input Power, PIN (dBm) 2-Tone Output Power, POUT (dBm) Drain Current, IDS (A) 4 3 2 1 0 10 ID (DSQ = 1 A) ID (DSQ = 2 A) IG (DSQ = 1.5 A ID (DSQ = 1.5 A) IG (DSQ = 1 A) IG (DSQ = 2 A) 30 f =1.96 GHz VDS = 10 V 20 10 0 -10 15 20 25 30 35 Input Power, PIN (dBm) Gate Current, IG (mA) Power Added Efficiency, PAE (%) VDS = 10 V, IDSQ = 1.5 A F = 880 MHz VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 1.5 GHz 100 NE650103M TYPICAL PERFORMANCE CURVES OUTPUT POWER AND POWER ADDED EFFICIENCY 45 (TA = 25°C) INTERMODULATION DISTORTION vs. OUTPUT POWER 100 -10 Intermodulation Distortion, IM (dBc) Power Added Efficiency, PAE (%) Output Power, POUT (dBm) 40 VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 2.3 GHz -15 -20 -25 -30 -35 -40 -45 -50 -55 80 VDS = 10 V, IDSQ = 1.5 A F1=2.2975 GHz F2=2.3025 GHz 35 60 30 40 25 20 IM3 -60 -65 20 25 30 35 40 IM5 20 10 10 20 25 30 35 0 Input Power, PIN (dBm) 2-Tone POUT (dBm) OUTPUT POWER AND POWER ADDED EFFICIENCY 45 VDS = 10 V, IDSQ = 1.5 A Rg = 100 Ω F = 2.65 GHz 100 LARGE SIGNAL IMPEDANCES (VDS = 10 V, IDSQ = 1.5 A) f (GHz) ZSOURCE (Ω) 4.96 - j3.16 3.97 - j2.10 2.99 - j1.0 2.71 + j0.23 2.64 + j0.75 2.54 + j1.26 ZLOAD (Ω) 5.60 - j5.02 4.94 - j3.49 4.32 - j2.22 5.50 - j5.58 5.36 - j5.07 5.16 - j4.59 Power Added Efficiency, PAE (%) 1.45 1.50 1.55 2.57 2.60 2.63 Output Power, POUT (dBm) 40 80 35 60 30 40 25 20 20 15 20 25 30 35 40 0 ZSOURCE ZLOAD Input Power, PIN (dBm) ZSOURCE = Impedance of the input circuit as seen by the Gate ZLOAD = Impedance of the output circuit as seen by the Drain NE650103M TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE650103M VDS = 10 V, IDS = 1.5 A FREQUENCY GHz 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.050 1.100 1.150 1.200 1.250 1.300 1.350 1.400 1.450 1.500 1.550 1.600 1.650 1.700 1.750 1.800 1.850 1.900 1.950 2.000 2.050 2.100 2.150 2.200 2.250 2.300 2.350 2.400 2.450 2.500 2.550 2.600 2.650 2.700 2.750 2.800 2.850 2.900 2.950 3.000 MAG 0.950 0.948 0.948 0.949 0.948 0.948 0.947 0.946 0.947 0.946 0.945 0.945 0.944 0.946 0.944 0.946 0.945 0.943 0.946 0.945 0.946 0.943 0.944 0.947 0.945 0.941 0.942 0.943 0.943 0.941 0.941 0.941 0.940 0.943 0.940 0.937 0.941 0.940 0.938 0.936 0.934 0.936 0.931 0.932 0.933 0.928 0.931 0.929 0.926 0.926 0.919 S11 ANG -166.801 -168.706 -170.446 -171.829 -173.218 -174.376 -175.359 -176.410 -177.310 -178.122 -178.884 -179.680 179.680 179.018 178.494 177.696 177.377 176.713 176.203 175.694 175.206 174.704 174.267 173.803 173.482 173.181 172.614 172.143 171.848 171.587 170.947 170.731 170.251 169.966 169.653 169.091 168.801 168.429 167.943 167.735 167.016 166.910 166.433 165.903 165.503 165.138 164.518 164.260 163.713 163.395 162.849 MAG 3.606 3.254 2.975 2.764 2.567 2.371 2.237 2.114 1.946 1.908 1.754 1.726 1.619 1.587 1.520 1.474 1.418 1.372 1.314 1.305 1.232 1.197 1.171 1.116 1.099 1.057 0.984 1.064 0.946 0.954 0.938 0.926 0.867 0.889 0.850 0.861 0.800 0.811 0.804 0.774 0.798 0.717 0.810 0.714 0.722 0.729 0.718 0.654 0.726 0.628 0.673 S21 ANG 95.956 96.181 94.737 94.806 93.386 94.237 92.721 93.772 91.986 94.011 92.389 93.634 92.849 93.493 92.255 93.864 90.651 93.609 90.644 92.051 90.661 90.751 90.113 91.168 88.995 90.847 90.126 91.207 89.272 90.467 91.322 90.115 88.345 94.627 87.056 93.588 87.432 92.862 90.651 92.677 86.676 97.704 84.892 93.323 87.855 91.627 88.300 90.099 88.885 91.463 87.232 MAG 0.012 0.012 0.012 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.014 0.015 0.015 0.015 0.016 0.016 0.016 0.017 0.016 0.017 0.017 0.018 0.018 0.018 0.018 0.020 0.018 0.021 0.019 0.021 0.021 0.022 0.022 0.024 0.023 0.025 0.023 0.025 0.025 0.025 0.026 0.026 0.025 0.028 0.025 0.028 0.027 0.027 0.028 0.028 0.027 S12 ANG 37.157 40.003 40.653 43.353 44.351 47.341 47.348 51.122 50.382 54.063 54.549 56.452 58.370 59.352 60.851 63.069 63.459 66.542 66.628 68.207 71.154 71.630 73.962 75.812 75.292 79.421 78.550 80.963 83.259 83.928 84.768 87.503 84.489 90.596 85.732 91.344 87.688 91.528 89.490 95.790 88.876 99.096 90.685 99.262 96.290 98.301 100.075 101.006 100.851 107.334 102.471 MAG 0.793 0.793 0.792 0.791 0.791 0.790 0.791 0.790 0.789 0.790 0.788 0.790 0.788 0.788 0.789 0.789 0.788 0.789 0.788 0.790 0.789 0.789 0.791 0.790 0.790 0.787 0.788 0.790 0.787 0.789 0.787 0.787 0.788 0.788 0.789 0.787 0.788 0.789 0.788 0.789 0.790 0.787 0.788 0.787 0.788 0.787 0.785 0.787 0.783 0.782 0.781 S22 ANG 177.824 177.500 176.943 176.613 176.249 175.759 175.507 175.214 174.632 174.326 174.018 173.560 173.352 172.912 172.696 172.332 172.058 171.750 171.399 171.112 170.825 170.545 170.233 169.870 169.605 169.410 168.907 168.664 168.308 167.842 167.763 167.195 166.953 166.278 166.119 165.605 165.134 164.845 164.526 164.073 163.916 163.497 162.977 162.952 162.439 162.298 161.656 161.336 161.071 160.580 160.196 NE650103M TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE650103M VDS = 12 V, IDS = 1.5 A FREQUENCY GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 MAG 0.953 0.954 0.954 0.954 0.955 0.953 0.951 0.953 0.951 0.952 0.954 0.953 0.954 0.952 0.949 0.952 0.95 0.952 0.954 0.951 0.951 0.951 0.949 0.953 0.951 0.949 0.952 0.951 0.948 0.951 0.951 0.95 0.953 0.951 0.947 0.95 0.948 0.948 0.952 0.946 0.947 0.944 0.94 0.943 0.944 0.939 0.941 0.938 0.931 0.932 0.932 S11 ANG -165.8 -167.4 -168.9 -170.2 -171.3 -172.3 -173.3 -174.3 -175.0 -175.7 -176.2 -176.7 -177.4 -177.8 -178.4 -178.9 -179.2 -179.8 179.9 179.6 179.0 178.7 178.4 178.0 177.8 177.4 177.0 176.7 176.3 175.9 175.7 175.3 175.0 174.8 174.3 174.0 173.8 173.2 173.2 172.8 172.2 172.0 171.5 171.0 170.8 170.5 169.8 169.5 169.0 168.4 168.1 MAG 3.860 3.516 3.201 3.003 2.775 2.566 2.442 2.281 2.132 2.062 1.932 1.876 1.797 1.723 1.675 1.608 1.559 1.500 1.433 1.428 1.330 1.315 1.254 1.209 1.182 1.141 1.060 1.142 1.021 1.024 1.020 0.995 0.963 0.956 0.947 0.934 0.895 0.880 0.894 0.845 0.887 0.778 0.889 0.773 0.777 0.785 0.761 0.707 0.765 0.675 0.718 S21 ANG 95.8 96.4 94.9 95.1 93.8 94.6 92.9 94.5 92.1 94.7 92.5 93.7 93.2 93.3 92.4 93.4 90.8 92.6 90.5 91.1 90.2 89.8 89.9 90.6 88.6 91.1 89.1 92.1 89.1 91.2 91.5 90.8 88.6 94.9 86.9 93.5 87.5 91.5 90.3 90.5 86.2 94.2 84.5 90.5 86.5 89.9 86.9 88.1 88.3 90.0 86.3 MAG 0.010 0.010 0.010 0.010 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.011 0.012 0.012 0.012 0.012 0.013 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.015 0.014 0.015 0.015 0.016 0.015 0.017 0.015 0.017 0.016 0.017 0.016 0.019 0.018 0.018 0.020 0.017 0.020 0.019 0.020 0.019 0.021 0.018 S12 ANG 31.4 32.0 34.3 35.7 37.5 37.8 40.9 41.2 43.1 47.8 46.6 51.1 50.5 53.5 54.7 57.7 56.6 60.4 60.9 61.7 65.5 65.0 66.5 69.5 72.2 70.3 76.5 74.7 78.3 79.4 79.7 79.8 82.9 81.1 84.6 88.7 85.4 91.6 90.5 94.2 90.3 101.1 88.5 100.4 95.2 96.1 98.1 100.5 97.2 103.4 104.3 MAG 0.754 0.755 0.756 0.755 0.754 0.754 0.755 0.755 0.755 0.755 0.756 0.755 0.756 0.756 0.756 0.757 0.758 0.756 0.755 0.757 0.757 0.757 0.758 0.757 0.758 0.758 0.759 0.76 0.759 0.76 0.759 0.759 0.763 0.759 0.76 0.76 0.759 0.76 0.756 0.758 0.757 0.756 0.756 0.754 0.754 0.752 0.75 0.751 0.746 0.746 0.743 S22 ANG 179.0 178.5 178.2 178.0 177.7 177.4 177.2 176.9 176.6 176.4 176.1 175.9 175.8 175.4 175.4 175.1 174.8 174.6 174.2 174.0 173.7 173.3 173.1 172.6 172.4 172.0 171.8 171.7 171.3 171.0 170.9 170.5 170.4 170.0 169.7 169.3 169.1 169.0 168.4 167.8 167.8 167.0 166.6 166.2 165.6 165.2 164.6 164.2 163.8 163.0 162.9 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/28/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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