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NE662M04

NE662M04

  • 厂商:

    CEL

  • 封装:

  • 描述:

    NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR - California Eastern Labs

  • 数据手册
  • 价格&库存
NE662M04 数据手册
NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance M04 DESCRIPTION NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 mA Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT Output Power at 1 dB compression point at VCE = 2 V, IC = 20 mA, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF GHz dB dB dB dB dBm 14 UNITS nA nA 50 20 70 25 20 20 17 1.1 11 22 0.18 0.24 1.5 MIN NE662M04 2SC5508 M04 TYP MAX 200 200 100 DC IEBO hFE fT MAG MSG |S21E|2 NF P1dB IP3 Cre Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MAG = S21 (K- (K2 -1) ) S12 5. MSG = S21 S12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 22, 2005 RF NE662M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 15 3.3 1.5 35 115 150 -65 to +150 TYPICAL NOISE PARAMETERS FREQ. (GHz) NFMIN (dB) GA (dB) ΓOPT MAG (TA = 25˚C) ANG Rn/50 VC = 2 V, IC = 3 mA 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.78 0.80 0.82 0.93 1.00 1.02 1.04 1.15 21.4 20.7 20.0 17.0 15.6 15.2 14.8 13.5 0.26 0.26 0.26 0.23 0.20 0.19 0.19 0.20 31.7 32.7 34.7 57.0 78.0 86.0 94.2 138.3 0.17 0.17 0.17 0.16 0.14 0.14 0.13 0.10 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. VC = 2 V, IC = 5 mA 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.93 0.94 0.96 1.03 1.07 1.09 1.10 1.17 22.5 21.8 21.1 18.1 18.7 16.3 15.9 14.3 0.12 0.12 0.12 0.09 0.08 0.08 0.08 0.14 28.1 28.8 31.7 71.1 106.2 118.5 130.5 -179.7 0.15 0.15 0.15 0.14 0.13 0.13 0.12 0.11 TYPICAL OPTIMAL NOISE MATCHING (TA = 25˚C) VCE = 2 V, lC = 5 mA, f= 1 GHz 1.0 0.5 2.0 VC = 2 V, IC = 10 mA 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.28 1.29 1.30 1.37 1.41 1.43 1.44 1.51 23.7 23.0 22.3 19.3 17.8 17.3 16.9 15.3 0.07 0.07 0.08 0.13 0.18 0.17 0.19 0.25 -159.4 -157.5 -155.7 -149.2 -146.1 -146.0 -143.9 -136.7 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.2 NFMIN = 1.0 dB ΓOPT 0 5.0 0 1.5 dB -0.2 2.0 dB 3.0 dB -0.5 -1.0 -2.0 -5.0 VC = 2 V, IC = 20 mA 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.59 1.61 1.63 1.72 1.78 1.79 1.81 1.90 24.5 23.7 23.0 19.9 18.3 17.9 17.5 15.8 0.28 0.28 0.27 0.30 0.33 0.34 0.35 0.40 -158.1 -155.5 -153.1 -142.6 -137.3 -135.7 -134.1 -126.5 0.12 0.13 0.13 0.14 0.15 0.08 0.16 0.18 VCE = 2 V, lC = 5 mA, f = 2 GHz 1.0 0.5 2.0 0.2 NFMIN = 1.1 dB ΓOPT 5.0 0 THERMAL RESISTANCE 0 ITEM 1.5 dB -0.2 2.0 dB 3.0 dB -0.5 -1.0 -2.0 -5.0 SYMBOL Rth j-c Rth j-a VALUE 150 650 UNIT °C/W °C/W Junction to Case Resistance Junction to Ambient Resistance NE662M04 TYPICAL PERFORMANCE CURVES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 4.5 VCE = 2V, lC = 5 mA 4.0 16 18 (TA = 25˚C) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 4.5 VC = 2V, lC = 10 mA 4.0 16 14 GA 3.0 2.5 12 10 18 Associated Gain, GA (dB) 3.5 GA 3.0 2.5 2.0 1.5 1.0 0.5 2 3 4 5 6 7 NF 14 12 10 8 6 4 2 8 9 10 12 3.5 2.0 1.5 NF 1.0 2 3 4 5 6 7 8 9 1012 8 6 4 Frequency, f (GHz) Frequency, f (GHz) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.00 f = 2.5 GHz, VCE = 2 V 30.0 6.00 NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 30.0 f = 1.5 GHz, VCE = 2 V Associated Gain, GA (dB) GA 4.00 20.0 4.00 GA 3.00 20.0 15.0 3.00 15.0 2.00 NF 10.0 2.00 NF 1.00 10.0 1.00 5.0 5.0 0.00 1 10 0.0 100 0.00 1 10 0.0 100 Collector Current, IC (mA) Collector Current, lC (mA) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.00 f = 2.0 GHz, VCE = 2 V 30.0 NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.00 f = 1.0 GHz, VCE = 2 V 30.0 Associated Gain, GA (dB) 5.00 25.0 4.00 GA 3.00 20.0 4.00 20.0 15.0 3.00 15.0 2.00 NF 10.0 2.00 NF 1.00 10.0 1.00 5.0 5.0 0.00 1 10 0.0 100 0.00 1 10 0.0 100 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, GA (dB) 5.00 GA 25.0 Noise Figure, NF (dB) Noise Figure, NF (dB) Associated Gain, GA (dB) 5.00 25.0 5.00 25.0 Noise Figure, NF (dB) Noise Figure, NF (dB) Associated Gain, GA (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) NE662M04 TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH vs. COLLECTOR CURRENT 25 VCE = 2 V 110 120 VCE = 2 V (TA = 25˚C) DC CURRENT GAIN vs. COLLECTOR CURRENT Gain Bandwdth, fT (GHz) 20 VCE = 1 V 100 DC Current Gain, hFE 90 80 70 60 50 40 30 15 10 5 0 1 5 10 20 25 30 35 20 .1 1 2 3 5 7 10 20 30 Collector Current, IC (mA) Collector Current, lC (mA) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 355 µA 305 µA 255 µA 20 205 µA 155 µA 105 µA 55 µA IB = 5 µA 0 Total Power Dissipation, PT (mW) Infinite Heatsink Mounted on a Ceramic Substrate 150 Free Air 100 Collector Current, Ic (mA) 150 200 10 50 0 1 25 50 75 100 125 0 1.0 2.0 3.0 3.5 Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 FEEDBACK CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE 0.50 Freq. = 1 MHz Collector Current, Ic (mA) 40 Feedback Capacitance, CRE (pF) 600 800 1000 1200 VCE = 2 V 0.40 30 0.30 20 0.20 10 0.10 0 200 400 0 1.0 2.0 3.0 4.0 5.0 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) NE662M04 TYPICAL PERFORMANCE CURVES FORWARD INSERTION GAIN vs. FREQUENCY 30 40 (TA = 25˚C) FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 2 V, IC = 20 mA 20 Forward Insertion Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) VCE = 2 V, IC = 5 mA Forward Insertion Gain, IS21I2 (dB) 30 MSG 20 IS21I2 10 10 VCE = 2 V, IC = 5 mA MAG 0 0.1 1 2 10 12 0 0.1 1 2 10 Frequency, f (GHz) FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 40 30.00 Frequency, f (GHz) MAXIMUM STABLE GAIN, INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT Forward Insertion Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) VCE = 2 V, IC = 20 mA f = 2 GHz, VCE = 2 V 25.00 MAG 20.00 MSG 15.00 IS21I 2 30 MSG 20 IS21I2 MAG 10.00 10 5.00 0 0.1 0.00 1 2 10 1 10 100 Frequency, f (GHz) Collector Current, IC (mA) MAXIMUM STABLE GAIN, INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT 30.00 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) f = 1 GHz, VCE = 2 V 25.00 MSG 20.00 MAG IS21I 2 15.00 10.00 5.00 0.00 1 10 100 Collector Current, IC (mA) NE662M04 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M04 2.05±0.1 +0.1 0.40-0.06 2 1.25±0.1 3 T79 0.60 2.0 ±0.1 1.25 0.65 1 +0.1 0.30-0.05 (Leads 1, 3, 4) 0.65 1.30 0.65 4 0.59±0.05 0.11 +0.1 -0.08 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base ORDERING INFORMATION (Solder Contains Lead) PART NUMBER NE662M04-T2 QUANTITY 3000 PACKAGING Tape & Reel ORDERING INFORMATION (Pb-Free) PART NUMBER NE662M04-T2-A QUANTITY 3000 PACKAGING Tape & Reel NE662M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ 60˚ 150˚ j10 S11 0.1 GHz 10 25 50 S22 18 GHz -j10 0 S22 0.1 GHz S12 0.1 GHz 30˚ 0 180˚ S12 18 GHz S21 18 GHz 0˚ -150˚ -j25 S11 18 GHz -j50 -j100 S21 0.1 GHz -120˚ -90˚ -60˚ -30˚ NE662M04 VDS = 2 V, IDS = 5 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 MAG 0.800 0.823 0.784 0.756 0.723 0.673 0.606 0.525 0.481 0.452 0.443 0.447 0.462 0.503 0.533 0.561 0.597 0.648 0.701 0.742 0.770 0.800 0.832 0.864 0.886 0.893 0.893 S11 ANG -6.49 -20.59 -33.50 -44.64 -54.00 -71.29 -94.50 -125.16 -149.81 -171.81 168.25 149.84 133.60 106.93 85.28 64.59 44.11 25.70 10.10 -3.57 -17.38 -32.18 -47.17 -60.22 -71.89 -83.62 -95.92 MAG 12.912 12.309 11.948 11.513 11.004 9.884 8.378 6.529 5.267 4.390 3.750 3.263 2.881 2.323 1.941 1.663 1.458 1.289 1.150 1.033 0.937 0.852 0.761 0.669 0.586 0.505 0.432 S21 ANG 170.08 162.54 153.92 146.61 139.33 126.94 111.49 91.42 75.35 61.34 48.61 36.68 25.36 3.99 -15.75 -34.58 -53.07 -71.41 -89.34 -107.27 -125.45 -144.57 -164.70 174.87 154.00 131.56 109.00 MAG 0.010 0.019 0.026 0.033 0.038 0.047 0.056 0.065 0.071 0.077 0.083 0.088 0.095 0.108 0.122 0.136 0.151 0.164 0.176 0.186 0.195 0.202 0.199 0.191 0.179 0.161 0.142 S12 ANG 80.54 73.16 66.89 61.60 56.80 49.31 40.70 32.29 27.18 23.73 20.64 17.74 14.65 7.35 -0.60 -10.18 -20.97 -32.58 -44.85 -57.61 -71.16 -86.33 -101.97 -117.93 -134.03 -150.31 -165.37 MAG 0.975 0.908 0.878 0.844 0.798 0.717 0.626 0.529 0.473 0.437 0.414 0.399 0.390 0.391 0.407 0.414 0.396 0.365 0.338 0.322 0.291 0.220 0.130 0.095 0.128 0.183 0.273 S22 ANG -12.55 -19.04 -24.33 -29.71 -35.10 -43.61 -53.73 -65.53 -74.56 -82.64 -90.48 -98.44 -106.85 -124.19 -138.63 -150.24 -161.21 -175.83 165.91 147.34 132.02 115.42 84.64 15.41 -38.31 -80.23 -113.09 0.14 0.17 0.19 0.21 0.26 0.34 0.45 0.63 0.79 0.94 1.05 1.13 1.18 1.21 1.21 1.19 1.17 1.13 1.06 0.99 0.96 0.96 1.01 1.06 1.13 1.37 1.78 K MAG1 (dB) 31.03 28.23 26.63 25.48 24.61 23.25 21.77 20.02 18.68 17.56 15.25 13.46 12.25 10.54 9.27 8.24 7.35 6.76 6.64 7.44 6.81 6.26 5.15 3.91 2.94 1.32 -0.29 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE662M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ 60˚ 150˚ j10 S21 18 GHz S12 0.1 GHz 30˚ 0 10 25 50 S11 0.1 GHz S22 18 GHz 0 S22 0.1 GHz 180˚ S21 0.1 GHz S12 18 GHz 0˚ -j10 -150˚ -j25 S11 18 GHz -j50 -j100 -30˚ -120˚ -90˚ -60˚ NE662M04 VDS = 2 V, IDS = 10 mA FREQUENCY GHz 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 MAG 0.656 0.558 0.459 0.411 0.390 0.380 0.384 0.396 0.417 0.441 0.462 0.478 0.489 0.502 0.516 0.533 0.552 0.578 0.606 0.635 0.662 0.687 0.708 0.725 0.740 0.759 0.778 0.797 0.817 0.836 0.854 0.870 0.879 0.883 0.888 0.891 0.890 S11 ANG -12.55 -72.63 -117.32 -147.32 -170.12 169.60 151.78 135.61 121.45 109.14 98.03 88.13 78.58 69.13 59.69 50.19 40.84 32.06 23.80 16.08 9.25 2.66 -3.68 -10.23 -16.97 -23.90 -31.43 -39.26 -46.37 -53.18 -59.55 -65.38 -71.31 -77.25 -83.09 -89.24 -95.45 MAG 21.524 16.388 11.085 8.116 6.357 5.209 4.404 3.812 3.357 2.999 2.707 2.466 2.270 2.100 1.958 1.835 1.724 1.624 1.533 1.448 1.373 1.303 1.240 1.180 1.129 1.078 1.026 0.971 0.917 0.862 0.809 0.760 0.714 0.668 0.622 0.576 0.539 S21 ANG 167.65 130.46 102.71 84.49 70.11 57.41 45.78 34.81 24.31 14.09 4.16 -5.47 -14.88 -24.15 -33.35 -42.50 -51.68 -60.85 -70.03 -79.10 -88.08 -97.24 -106.32 -115.51 -124.94 -134.43 -144.36 -154.44 -164.53 -174.70 175.14 164.91 154.41 143.35 132.27 121.03 110.25 MAG 0.009 0.032 0.045 0.055 0.064 0.074 0.084 0.093 0.103 0.112 0.121 0.129 0.138 0.145 0.153 0.160 0.166 0.172 0.177 0.182 0.186 0.190 0.193 0.196 0.198 0.200 0.200 0.197 0.193 0.189 0.184 0.178 0.171 0.163 0.153 0.143 0.134 S12 ANG 79.73 54.65 44.24 40.54 37.88 34.88 31.26 27.22 22.52 17.49 12.11 6.79 1.28 -4.55 -10.53 -16.66 -22.97 -29.26 -35.77 -42.17 -48.81 -55.36 -62.02 -68.84 -75.82 -82.99 -90.81 -98.62 -105.96 -113.50 -121.17 -128.62 -136.43 -144.44 -152.15 -159.23 -166.19 MAG 0.953 0.704 0.505 0.416 0.371 0.345 0.329 0.318 0.313 0.312 0.316 0.323 0.331 0.338 0.336 0.329 0.314 0.298 0.279 0.262 0.249 0.238 0.228 0.216 0.196 0.165 0.130 0.089 0.043 0.008 0.045 0.074 0.100 0.126 0.161 0.204 0.250 S22 ANG -15.38 -43.47 -61.57 -71.56 -79.33 -86.61 -94.15 -102.20 -110.82 -119.93 -128.31 -135.75 -141.92 -147.40 -152.31 -157.13 -161.77 -167.85 -175.31 176.18 167.10 157.82 150.01 143.52 139.24 136.32 133.05 132.98 134.60 -126.17 -78.36 -82.90 -92.08 -102.52 -113.78 -124.99 -133.10 0.17 0.39 0.64 0.83 0.95 1.04 1.10 1.13 1.14 1.15 1.14 1.14 1.14 1.13 1.12 1.12 1.12 1.11 1.09 1.07 1.04 1.02 0.99 0.98 0.97 0.96 0.96 0.97 0.99 1.00 1.02 1.03 1.07 1.16 1.27 1.43 1.60 K MAG1 (dB) 33.8 27.1 23.9 21.7 19.9 17.2 15.3 13.9 12.8 11.9 11.2 10.5 9.9 9.4 8.9 8.5 8.1 7.8 7.5 7.4 7.4 7.5 8.1 7.8 7.6 7.3 7.1 6.9 6.8 6.2 5.5 5.3 4.6 3.7 3.0 2.2 1.5 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE662M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ 60˚ 150˚ j10 S21 18 GHz 30˚ 0 10 25 50 S11 0.1 GHz 0 S22 0.1 GHz 180˚ S21 0.1 GHz S12 18 GHz S12 0.1 GHz 0˚ -j10 S22 18 GHz S11 18 GHz -j50 -150˚ -j100 -30˚ -j25 -120˚ -90˚ -60˚ NE662M04 VDS = 2 V, IDS = 20 mA FREQUENCY GHz 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 MAG 0.478 0.420 0.377 0.361 0.356 0.356 0.366 0.383 0.405 0.429 0.449 0.464 0.474 0.485 0.498 0.514 0.533 0.558 0.586 0.616 0.643 0.669 0.691 0.709 0.725 0.746 0.766 0.787 0.809 0.829 0.847 0.864 0.875 0.879 0.885 0.888 0.887 S11 ANG -21.17 -95.65 -140.33 -167.18 173.00 155.15 139.53 125.38 112.90 101.89 91.80 82.65 73.73 64.85 55.95 47.03 38.18 29.93 22.10 14.75 8.23 1.93 -4.15 -10.52 -17.06 -23.83 -31.30 -39.12 -46.23 -53.03 -59.39 -65.18 -71.13 -77.09 -82.91 -89.06 -95.33 MAG 30.628 20.411 12.654 8.963 6.924 5.625 4.733 4.086 3.595 3.211 2.900 2.645 2.438 2.260 2.109 1.978 1.861 1.755 1.658 1.568 1.489 1.415 1.347 1.286 1.229 1.172 1.115 1.055 0.996 0.936 0.879 0.828 0.779 0.731 0.681 0.633 0.595 S21 ANG 164.59 122.80 96.57 79.99 66.76 54.91 43.94 33.53 23.51 13.68 4.06 -5.30 -14.52 -23.66 -32.75 -41.81 -50.95 -60.07 -69.20 -78.26 -87.24 -96.42 -105.57 -114.82 -124.30 -133.88 -143.85 -153.89 -163.89 -173.90 176.00 165.89 155.45 144.58 133.70 122.64 112.04 MAG 0.008 0.027 0.039 0.051 0.063 0.075 0.087 0.098 0.109 0.120 0.129 0.138 0.147 0.155 0.163 0.170 0.176 0.181 0.186 0.190 0.194 0.196 0.198 0.200 0.201 0.202 0.200 0.196 0.191 0.186 0.180 0.173 0.166 0.158 0.148 0.137 0.129 S12 ANG 77.90 55.26 50.55 48.74 45.98 42.06 37.36 32.17 26.52 20.61 14.46 8.45 2.28 -4.15 -10.60 -17.22 -23.96 -30.61 -37.43 -44.07 -50.92 -57.75 -64.56 -71.54 -78.71 -85.96 -93.76 -101.42 -108.56 -115.98 -123.53 -130.77 -138.24 -146.13 -153.64 -160.49 -167.16 MAG 0.920 0.608 0.413 0.338 0.304 0.287 0.276 0.268 0.265 0.266 0.271 0.278 0.285 0.291 0.287 0.279 0.262 0.244 0.224 0.206 0.191 0.178 0.166 0.153 0.135 0.110 0.084 0.066 0.063 0.078 0.102 0.122 0.141 0.160 0.188 0.225 0.263 S22 ANG -18.24 -50.41 -66.91 -75.34 -82.29 -89.18 -96.76 -105.14 -114.14 -123.63 -132.09 -139.34 -145.15 -150.18 -154.60 -158.90 -162.87 -168.45 -175.58 176.14 167.23 158.39 151.79 147.66 147.52 151.92 160.86 -176.40 -144.57 -121.33 -112.73 -114.28 -119.68 -127.09 -133.94 -141.26 -146.76 0.27 0.54 0.81 0.96 1.03 1.08 1.10 1.12 1.12 1.12 1.11 1.11 1.10 1.10 1.09 1.09 1.09 1.09 1.07 1.06 1.04 1.02 1.00 0.99 0.98 0.97 0.97 0.98 0.99 1.00 1.02 1.03 1.06 1.14 1.24 1.40 1.56 K MAG1 (dB) 35.8 28.8 25.1 22.5 19.4 17.1 15.4 14.1 13.1 12.2 11.5 10.8 10.2 9.7 9.2 8.8 8.4 8.1 7.8 7.7 7.6 7.7 8.2 8.1 7.9 7.6 7.5 7.3 7.2 6.6 6.0 5.8 5.2 4.4 3.7 2.9 2.2 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE662M04 NE662M04 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 1.6e-16 111 1.02 23 0.38 1e-6 30 12 1.02 2.5 0.1 3e-15 1.28 0.77 3.5 20 1.3e-3 8.75 0.4e-12 0.6 0.5 0.1e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.3 0.3 0 0.75 0 0.55 3e-12 0.1 0.8 0.14 23.5 1e-11 1.11 0 3 0 1 (1) UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPK LBX LCX LEX NE662M04 0.09e-12 0.09e-12 1.0e-9 0.6e-9 0.22e-9 0.001e-12 0.3e-12 0.21e-12 0.2e-9 0.2e-9 0.07e-9 (1) Gummel-Poon Model MODEL RANGE Frequency: 0.1 to 12 GHz Bias: VCE = 0.5 V to 3 V, IC = 1 mA to 20 mA Date: 01/12/2000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. 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