NE68033-T1B-R44-A

DATA SHEET SHEET DATA SILICON TRANSISTOR NE68033 / 2SC3585 JEITA Part No. +0.1 0.4 −0.05 2 1 3 ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Marking +0.1 0.16 −0.06 V V V mA mW
C
C 0.3 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 20 10 1.5 35 200 150 65 to +150 1.1 to 1.4 VCBO VCEO VEBO IC PT Tj Tstg PH AS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 0.65 −0.15 +0.1 @f = 2.0 GHz @f = 2.0 GHz +0.1 1.5 0.4 −0.05 1.8 dB TYP. 9 dB TYP. E- • NF • Ga 2.8±0.2 0.95 FEATURES PACKAGE DIMENSIONS (Units: mm) 0.95 The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range. 2.9±0.2 DESCRIPTION O UT MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0
A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0
A VEB = 1 V, IC = 0 DC Current Gain hFE * Gain Bandwidth Product fT Feed-Back Capacitance Cre ** Maximum Available Gain 100 250 10 GHz 8.0 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz MAG 10 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz NF 1.8 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz 2 6.0 0.8 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz Noise Figure 0.3 VCE = 6 V, IC = 10 mA pF
S21e
Insertion Power Gain 50 3.0 * Pulse Measurement PW  350
s, Duty Cycle  2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Class R43/Q * R44/R * R45/S * Marking R43 R44 R45 hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification Document No. P10361EJ4V1DS00 (4th edition) Date Published March 1997 N NE68033 / 2SC3585 TYPICAL CHARACTERISTICS (TA = 25 C) 3 Free Air 200 100 50 0 100 150 TA-Ambient Temperature-°C 50 PH AS 20 1 5 10 50 IC-Collector Current-mA VCE = 6 V 20 10 7 5 3 2 1 2 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT MAG-Maximum Available Gain-dB |S21e|2-Insertion Gain -dB fT-Gain Bandwidth Product-MHz 30 0.7 0.5 0.3 0.2 2 3 5 7 10 VCB-Collector to Base Voltage-V 20 30 20 30 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 6 V f = 2.0 GHz E- 100 10 0.5 1 10 VCE = 6 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain 200 f = 1.0 MHz 2 0.1 1 DC CURRENT GAIN vs. COLLECTOR CURRENT FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE O UT Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 3 5 7 10 IC-Collector Current-mA 20 30 8 6 4 2 0 1 20 16 2 3 5 7 10 IC-Collector Current-mA INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 6 V IC = 10 mA MAG |S21e| 2 12 8 4 0 0.1 0.2 0.3 0.5 7.0 1.0 f-Frequency-GHz 2.0 3.0 NE68033 / 2SC3585 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 6 V f = 2.0 GHz 5 4 3 2 1 0 0.5 1 O UT NF-Noise Figure-dB 6 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 6.0 V, IC = 3.0 mA, ZO = 50 S11 S11 S21 S12 S12 S22 S22 200 0.858 23.1 8.499 153.3 0.030 46.5 0.905 13.5 400 0.724 40.6 6.923 131.6 0.060 58.7 0.826 21.2 600 0.580 51.1 5.951 118.4 0.080 60.3 0.749 27.0 800 0.457 58.9 4.615 104.9 0.099 60.2 0.666 28.6 1000 0.362 65.6 4.134 98.0 0.106 61.2 0.614 30.1 1200 0.304 73.1 3.412 88.9 0.129 61.1 0.574 30.0 1400 0.232 82.2 3.180 82.0 0.148 60.1 0.542 31.7 1600 0.179 84.9 2.763 75.7 0.154 59.5 0.514 35.2 1800 0.147 88.2 2.726 70.5 0.188 58.7 0.483 40.1 2000 0.108 104.1 2.378 64.9 0.197 56.8 0.455 42.6 S21 S21 S12 S12 S22 S22 E- S21 PH AS f (MHz) VCE = 6.0 V, IC = 10.0 mA, ZO = 50 f (MHz) S11 S11 200 0.613 37.0 16.141 133.9 0.021 52.5 0.781 19.4 400 0.406 53.6 10.096 111.5 0.053 70.6 0.651 22.4 600 0.285 56.0 7.640 101.4 0.064 73.0 0.590 24.0 800 0.214 57.6 5.564 90.7 0.089 71.7 0.548 22.8 1000 0.156 58.1 4.787 86.0 0.095 70.6 0.526 23.3 1200 0.130 54.2 3.876 79.3 0.119 70.3 0.506 22.1 1400 0.105 56.5 3.573 74.0 0.141 68.3 0.489 24.8 1600 0.065 55.0 3.058 69.4 0.158 68.9 0.470 27.9 1800 0.042 48.9 2.997 65.3 0.178 66.5 0.439 31.4 2000 0.018 65.6 2.590 60.7 0.202 66.2 0.426 36.5 3 NE68030 / 2SC3585 S-PARAMETER 1.4 1.2 1.0 0.9 1.6 0.7 1.8 2.0 5 O UT N 4 0. O 4.0 1.0 0 1. 6.0 0.6 0.4 5.0 20 10 4.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 3.0 S22e 0.2 GHz 10 0.1 0.3 1.8 2.0 z GH 0.27 0.23 IC = 3 mA 0.6 0 1. 5.0 0.8 ( E NC TA X AC −J––O– RE –Z 0 3. 0.6 E IV AT 4.0 ) 1.0 0.2 GHz S11e 0 NE G 2.0 1.8 0.35 0.15 −70 0.36 0.14 −80 −90 0.37 0.13 0.38 0.12 0. 4 0. 3 07 30 −1 0.39 0.11 −100 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 E- 4 0.3 6 0.1 1.4 1.6 0.2 1.2 0 1.0 3 0.3 7 −6 0.9 0.1 0.8 18 0 0.7 32 −5 0.6 0. 0. 5 0.4 0. 0. 31 19 0. 0.2 8 0.2 2 −20 8 0. −4 4 −10 2.0 0.4 50 ) 50 0.26 0.24 IC = 10 mA 0. 25 0.25 0.2 20 S22e 20 0.3 0.2 0.8 10 2.0 GHz 0 ( 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO 0 3. 0.8 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 120° S12e-FREQUENCY CONDITION PH AS IC = 10 mA 30° S21e 60° 2.0 GHz IC = 10 mA 150° 30° S12e IC = 3 mA 1.0 GHz 2.0 GHz 0.2 GHz 1.0 GHz 2.0 GHz 0 4 8 12 16 0° 180° 20 −30° −60° −120° −90° VCE = 6 V 90° 120° 60° −150° 4 0. 18 32 0. 50 0.6 VCE = 6 V 90° 180° 0.1 0.3 7 3 600 1 0.2 9 0.2 30 S21e-FREQUENCY CONDITION IC = 3 mA 0.1 6 0.3 4 0.4 REACTANCE COMPONENT R –––– 0.2 ZO 0. 150° 70 0. T EN 0.2 0.2 GHz 0.15 0.35 0 0.2 0 0.3 WAVELE NG 0.14 0.36 80 0.2 0.1 0.3 0.13 0.37 90 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0 12 0.12 0.38 0.11 0.39 100 19 0. 31 0. 07 43 0. 0 13 0. 0.10 0.40 110 0.6 8 0.0 2 0.4 9 0.0 1 0.4 0.8 VCE = 6 V 200 MHz Step 0.2 S11e, S22e-FREQUENCY CONDITION 0 0.2 GHz 0° 0.04 0.08 0.12 0.16 0.20 −150° −30° −60° −120° −90° NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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