NE681M03-A

NEC's NPN SILICON TRANSISTOR NE681M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: NF = 1.4 dB OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 • • TE 3 0.3±0.1 DESCRIPTION NEC's NE681M03 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ flat lead style "M03" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA pF UNITS GHz dB dB 10 80 MIN 4.5 NE681M03 2SC5433 M03 TYP 7.0 1.4 12 145 0.8 0.8 0.9 2.7 MAX California Eastern Laboratories NE681M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 20 10 1.5 65 125 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE681M03-A NE681M03-T1-A QUANTITY Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 65 500 VCE = 8 V FORWARD CURRENT GAIN vs. COLECTOR CURRENT 55 DC Forward Current Gain, hFE 2 4 6 8 10 300 200 Collector Current, IC (mA) 45 100 70 50 30 20 35 25 15 5 10 0 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) NE681M03 SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 239.6e-18 125 0.9854 12 0.200 1.933e-6 50 18.25 0.9771 10 11.81e-3 1.55e-18 1.860 0.870 4.0 5.2 1e-6 4.635 1.2e-12 0.77 0.4844 0.4e-12 0.5275 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.223 0 0 0.75 0 0.5 10e-12 25 0.40 0.13 43.1 0.3e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 681M03 0.07e-12 0.01e-12 0.3e-9 0.8e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9 (1) Gummel-Poon Model MODEL RANGE Frequency: 0.1 to 5.0 GHz Bias: VCE = 2.5 V to 8 V, IC = 0.3 mA to 20 mA Date: 12/98 hFE = 124 at VCE = 3 V, IC = 7 mA Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. 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