NE685M13-T3-A

NEC's NPN SILICON TRANSISTOR NE685M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.15+0.1 ñ0.05 0.7±0.05 0.5+0.1 ñ0.05 0.2+0.1 ñ0.05 (Bottom View) 0.3 • • 0.35 1.0+0.1 ñ0.05 0.7 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 2 3 Y2 0.35 1 DESCRIPTION NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.15+0.1 ñ0.05 0.1 0.1 0.2 0.2 0.125+0.1 ñ0.05 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA pF 0.4 UNITS GHz dB dB 7.0 75 MIN NE685M13 2SC5617 M13 TYP 12.0 1.5 11.0 140 0.1 0.1 0.7 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. 3-155 NE685M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 30 140 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE685M13-T3-A QUANTITY 3k pcs./reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 f = 1 MHz Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy PCB 2 (1.08 cm X 1.0 mm (t) ) 250 200 150 100 50 Reverse Transfer Capacitance, Cre (pF) 300 0.5 0.4 0.3 0.2 0.1 140 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 Ambient Temperature, TA (ºC) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT VS. BASE TO EMITTER VOLTAGE 30 VCE = 3 V 25 20 15 10 5 COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 40 Collector Current, IC (mA) Collector Current, IC (mA) 30 20 300 µA 270 µA 240 µA 210 µ A 180 µA 150 µA 120 µ A 90 µA 60 µA 2 4 IB = 30 µA 6 8 10 0 0.2 0.4 0.6 0.8 1.0 0 Base to Emitter Voltage, TBE (V) Collector to Emitter Voltage, VCE (V) 3-156 NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 000 VCE = 3 V 16 Gain Bandwidth Product, fT (GHz) 14 12 10 8 6 4 2 VCE = 3 V f = 2 GHz DC Current Gain, hFE 100 10 0.1 1 10 100 0 1 10 Collector Current, IC (mA) 100 Collector Current, IC (mA) INSERTION POWER GAIN VS. FREQUENCY 35 INSERTION POWER GAIN VS. FREQUENCY 35 Insertion Power Gain |S21e|2, (dB) 30 25 20 15 10 5 0 0.1 1 Insertion Power Gain |S21e|2, (dB) VCE = 1 V IC = 10 mA 30 25 20 15 10 5 0 0.1 1 VCE = 3 V IC = 10 mA 10 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) VCE = 1 V f = 1 GHz MSG MAG 20 VCE = 3 V MSG f = 1 GHz MAG 15 |S21e| 10 2 15 |S21e|2 10 5 5 0 1 10 Collector Current, IC (mA) 100 0 1 10 Collector Current, IC (mA) 100 3-157 NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) VCE = 1 V f = 2 GHz VCE = 3 V f = 2 GHz 15 MSG 10 |S21e|2 5 MAG 15 MSG 10 MAG |S21e|2 5 0 1 10 Collector Current, IC (mA) 100 0 1 10 Collector Current, IC (mA) 100 Associated Gain, Ga (dB) 3 12 3 12 2 NF 8 2 NF 1 0 1 8 1 0 1 4 0 100 4 0 100 10 Collector Current, IC (mA) 10 Collector Current, IC (mA) 3-158 Associated Gain, Ga (dB) Noise Figure NF, (dB) Noise Figure NF, (dB) NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 1 GHz 16 4 Ga NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 3 V Ga f = 1 GHz 4 16 NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 2 GHz 16 4 NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 3 V f = 2 GHz Associated Gain, Ga (dB) 3 Ga 2 NF 1 0 1 12 3 Ga 12 8 2 NF 8 4 0 100 1 0 1 4 0 100 10 Collector Current, IC (mA) 10 Collector Current, IC (mA) 3-159 Associated Gain, Ga (dB) Noise Figure NF, (dB) Noise Figure NF, (dB) 4 16 NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135º +45º +90º j10 S11 0 10 25 S11 50 100 +180º S21 2 4 6 8 10 12 +0º -j10 S22 -135º -45º -j25 -j50 -j100 -90º NE685M13 VC = 2 V, IC = 5 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 MAG 0.879 0.854 0.813 0.764 0.677 0.634 0.597 0.560 0.530 0.501 0.478 0.459 0.425 0.399 0.379 0.364 0.350 0.339 0.330 0.321 0.312 0.306 0.301 0.296 0.291 0.286 S11 ANG -11.18 -24.79 -36.17 -46.95 -58.07 -67.22 -75.01 -82.74 -89.38 -95.62 -101.10 -106.13 -114.91 -122.59 -129.37 -135.19 -140.57 -145.78 -150.79 -155.59 -160.44 -165.34 -170.19 -175.11 -179.68 176.05 MAG 10.895 10.531 9.980 9.356 8.645 7.952 7.355 6.818 6.315 5.872 5.483 5.137 4.543 4.068 3.678 3.369 3.103 2.882 2.695 2.529 2.386 2.263 2.150 2.048 1.957 1.874 S21 ANG 169.79 159.27 150.16 142.00 133.16 127.18 122.04 117.17 113.03 109.14 105.72 102.65 97.14 92.39 88.20 84.36 80.91 77.59 74.45 71.46 68.56 65.81 63.12 60.52 58.06 55.66 MAG 0.017 0.033 0.047 0.059 0.069 0.077 0.083 0.089 0.095 0.099 0.104 0.108 0.116 0.123 0.131 0.138 0.146 0.154 0.162 0.170 0.178 0.186 0.194 0.202 0.210 0.218 S12 ANG 85.46 76.47 70.32 65.55 59.99 57.31 55.43 53.53 52.58 51.55 50.81 50.49 50.07 50.09 50.25 50.70 51.06 51.17 51.40 51.61 51.67 51.55 51.53 51.43 51.16 51.06 MAG 0.980 0.943 0.894 0.843 0.756 0.701 0.657 0.615 0.579 0.542 0.515 0.491 0.451 0.417 0.394 0.377 0.362 0.351 0.343 0.335 0.328 0.324 0.323 0.323 0.327 0.332 S22 ANG -8.26 -15.79 -22.51 -28.26 -32.30 -35.05 -38.07 -40.74 -42.38 -44.09 -45.60 -47.11 -49.16 -50.64 -52.06 -53.48 -55.00 -56.70 -58.44 -60.35 -62.49 -65.12 -67.74 -70.53 -73.25 -75.87 0.05 0.13 0.19 0.24 0.37 0.43 0.47 0.51 0.56 0.61 0.65 0.68 0.76 0.82 0.88 0.92 0.96 0.99 1.02 1.04 1.06 1.08 1.09 1.10 1.10 1.11 K MAG1 (dB) 27.96 25.05 23.25 21.98 21.00 20.16 19.46 18.82 18.24 17.73 17.22 16.79 15.94 15.18 14.49 13.87 13.27 12.73 11.43 10.49 9.75 9.16 8.63 8.14 7.72 7.33 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-160 NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135º +45º +90º j10 S12 5 10 15 20 +0º S11 0 10 25 50 100 +180º S21 S22 -j10 -135º -45º -j25 -j50 -j100 -90º NE685M13 VC = 3 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 MAG 0.830 0.791 0.734 0.675 0.584 0.541 0.506 0.473 0.448 0.423 0.405 0.390 0.364 0.344 0.329 0.318 0.308 0.300 0.294 0.287 0.282 0.277 0.273 0.270 0.266 0.263 S11 ANG -14.89 -30.25 -43.35 -55.24 -67.02 -76.48 -84.40 -92.17 -98.62 -104.84 -110.11 -114.95 -123.47 -130.71 -137.11 -142.56 -147.52 -152.37 -157.24 -161.72 -166.38 -170.99 -175.85 179.25 174.83 170.53 MAG 15.406 14.529 13.385 12.178 10.911 9.839 8.943 8.163 7.477 6.891 6.385 5.947 5.216 4.640 4.179 3.809 3.499 3.242 3.024 2.834 2.670 2.526 2.397 2.282 2.179 2.084 S21 ANG 167.04 155.17 144.88 136.08 127.43 121.58 116.65 112.19 108.45 104.94 101.90 99.15 94.22 90.04 86.28 82.88 79.73 76.73 73.87 71.13 68.47 65.91 63.40 60.99 58.67 56.42 MAG 0.015 0.029 0.041 0.050 0.058 0.064 0.069 0.075 0.079 0.083 0.088 0.092 0.100 0.109 0.117 0.126 0.135 0.144 0.153 0.162 0.171 0.180 0.189 0.197 0.207 0.215 S12 ANG 79.15 74.31 68.95 64.19 59.86 57.87 56.90 55.96 55.53 55.34 55.24 55.23 55.77 56.13 56.73 57.15 57.35 57.60 57.62 57.53 57.39 57.27 56.83 56.62 56.19 55.67 MAG 0.969 0.918 0.852 0.786 0.690 0.631 0.586 0.546 0.513 0.478 0.455 0.435 0.401 0.373 0.355 0.341 0.330 0.322 0.316 0.310 0.304 0.302 0.301 0.302 0.306 0.311 S22 ANG -9.82 -18.40 -25.66 -31.42 -34.94 -37.08 -39.46 -41.46 -42.47 -43.52 -44.52 -45.57 -46.75 -47.51 -48.39 -49.39 -50.56 -51.97 -53.62 -55.48 -57.60 -60.04 -62.78 -65.63 -68.43 -71.13 0.15 0.18 0.25 0.32 0.46 0.52 0.57 0.62 0.66 0.71 0.75 0.78 0.85 0.90 0.94 0.97 1.00 1.02 1.03 1.05 1.06 1.07 1.07 1.08 1.08 1.08 K MAG1 (dB) 30.06 26.96 25.11 23.86 22.75 21.86 21.10 20.39 19.74 19.17 18.61 18.09 17.16 16.29 15.52 14.81 14.15 12.70 11.86 11.10 10.45 9.89 9.38 8.91 8.51 8.11 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-161 NE685M13 NE685M13 NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 0 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.812 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 SCHEMATIC Q1 CCBPKG CCB LCX LBX Base LB CCE Collector 0.34 0.7 0 0.75 0 0.5 2.5e-12 5.2 4.58 0.011 0 1e-9 1.11 0 3 0 1 LE CCEPKG LEX Emitter ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68533 0.1e-12 0.14e-12 0.35e-9 0.4e-9 0.05e-12 0.05e-12 0.05e-9 0.05e-9 0.05e-9 (1) Gummel-Poon Model UNITS Parameter time capacitance inductance resistance voltage current Units seconds (S) farads (F) henries (H) ohms (Ω) volts (V) amps (A) MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 09/02 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 03/18/2002 3-162 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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