NE69039

NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE69039 NE69039 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 DESCRIPTION NEC's NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Minimold package and is available on tape and reel. The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.2 1.1 -0.1 1 +0.10 0.6 -0.05 4 1) Collector 2) Emitter 3) Base 4) Emitter 0.8 0.16 +0.10 -0.06 5˚ 0 to 0.1 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 GP PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 1 mA (Class AB) Duty 1/8 dBm dB % MS 5.0 50 UNITS µA µA 30 27.5 6.0 72 10.0 MIN NE69039 39 TYP MAX 2.5 2.5 ηC TON Maximum Device On Time California Eastern Laboratories NE69039 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VCBO VCEO VEBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 300 200 (CW) 150 -65 to +150 1.9 2 3 OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1 4 1.0 1.0 APPLICATION (1) TX Amplifier for DECT +3 dBm Po = 27 dBm ORDERING INFORMATION PART NUMBER NE69039-T1-A Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL NE68839 NE68939 NE69039 (2) TX Amplifier for PHS -14 dBm P1 = 22 dBm ZIN (Ω), ZOUT (Ω) DATA j50 µPC2771T NE68939 NE69039 j25 j100 OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER 30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) j10 ZIN Collector Efficency, ηC (%) ZOUT 0 0 Output Power, Pout (dBm) Pout 20 ηC 80 60 Collector Currents, IC (mA) 25 -j10 15 IC 10 GP 5 40 20 0 8 7 6 5 4 5 10 15 20 25 30 20 10 0 -j25 -j50 -j100 Power Gain, Gp (dB) ZOUT ZIN Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB ηC IC GL 27.5 72 27 6.7 dBm % mA db IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = 1 mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN (Ω) 7.42+j14.2 4.0+j8.8 ZOUT (Ω) 15.8-j2.64 4.4-j4.6 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/06/2000 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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