NE851M13

NEC's NPN SILICON TRANSISTOR NE851M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.7±0.05 0.5+0.1 ñ0.05 0.15+0.1 ñ0.05 (Bottom View) 0.3 0.35 • • 2 1.0+0.1 ñ0.05 0.7 LOW PUSHING FACTOR 3 0.35 1 DESCRIPTION NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.15+0.1 ñ0.05 0.1 0.1 0.2 0.2 0.125+0.1 ñ0.05 0.2+0.1 ñ0.05 • E7 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT fT |S21E|2 |S21E|2 NF CRE ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain2 at VCE = 1 V, IC = 5 mA UNITS GHz GHz dB dB dB pF nA nA MIN 3.0 5.0 3.0 4.5 – – – – 100 NE851M13 2SC5801 M13 TYP 4.5 6.5 4.0 5.5 1.9 0.6 – – 120 MAX – – – 2.5 0.8 600 600 145 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Collector to base capacitance when the emitter is grounded California Eastern Laboratories NE851M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9 5.5 1.5 100 140 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE851M13-T3-A QUANTITY 10 k pcs./reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy PCB (1.08 cm2 • 1.0mm(t) ) Reverse Transfer Capacitance, Cre (pF) 160 140 120 100 80 60 40 20 0 1.0 f = 1 MHz 0.8 0.6 0.4 0.2 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 VCE = 2 V Collector Current, IC (mA) 80 Collector Current, IC (mA) 50 400 µ A 360 µ A 320 µ A 280 µ A 240 µ A 200 µ A 160 µ A 120 µ A 40 60 30 40 20 20 10 80 µ A 0 IB = 40 µA 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 6 7 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 8 Gain Bandwidth Product, fT (GHz) 8 6 Gain Bandwidth Product, fT (GHz) VCE = 1 V f = 2 GHz 6 4 4 2 2 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN vs. FREQUENCY 35 INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 2 V IC = 5 mA 30 25 20 15 10 5 0 0.1 Insertion Power Gain, |S21e|2 (dB) 30 25 20 15 10 5 0 0.1 Insertion Power Gain, |S21e|2 (dB) VCE = 1 V IC = 5 mA 1 10 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY 35 INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 2 V IC = 15 mA Insertion Power Gain, |S21e|2 (dB) Insertion Power Gain, |S21e|2 (dB) 10 VCE = 1 V IC = 15 mA 30 25 20 15 10 5 0 0.1 30 25 20 15 10 5 0 0.1 1 1 10 Frequency, f (GHz) Frequency, f (GHz) NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MSG 15 MAG MSG 15 MAG 10 |S21e| 2 |S21e|2 10 5 5 0 1 10 VCE = 1 V f = 1 GHz 100 0 VCE = 2 V f = 1 GHz 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT 15 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) 10 MAG Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) VCE = 1 V f = 2 GHz VCE = 2 V f = 2 GHz MAG 10 5 |S21e| 2 5 |S21e|2 0 0 -5 1 10 100 -5 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MAG MSG 5 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 1 V f = 4 GHz VCE = 2 V f = 4 GHz MSG MAG 5 0 |S21e| 2 0 |S21e| 2 -5 -5 -10 1 10 100 -10 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 1 GHz 5 15 18 6 VCE = 2 V f = 1 GHz NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 19 4 12 4 12 3 9 3 9 2 6 2 6 1 NF 3 1 NF 3 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 2 GHz 18 6 NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 18 VCE = 2 V f = 2 GHz Associated Gain, Ga (dB) 4 Ga 3 12 4 Ga 3 12 9 9 2 NF 1 6 2 NF 6 3 1 3 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER 25 20 VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF) 80 70 OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER 25 20 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) 80 70 60 50 40 30 20 10 IC 0 Output Power, POUT (dBm) Output Power, POUT (dBm) Collector Current, IC (mA) 15 10 Pout 5 0 -5 IC -10 -15 -20 60 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 10 5 0 -5 -10 -15 -20 Pout -15 -10 -5 0 5 10 Input Power, PIN (dBm) Input Power, PIN (dBm) Collector Current, IC (mA) Associated Gain, Ga (dB) 5 15 5 15 Noise Figure, NF (dB) Noise Figure, NF (dB) Associated Gain, Ga (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) Ga Associated Gain, Ga (dB) 5 Ga 15 NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135˚ S21 +90˚ S12 +45˚ j10 S 11 0 10 25 50 100 0 +180˚ 2 4 6 8 1 0˚ -j10 S2 2 -135˚ -45˚ -j25 -j50 0.100 to 4.000 GHz by 0.050 -j100 -90˚ 0.100 to 4.000GHz by 0.050 NE851M13 VC = 1 V, IC = 5 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 MAG 0.831 0.789 0.765 0.750 0.706 0.699 0.697 0.696 0.697 0.697 0.704 0.712 0.724 0.732 0.743 0.746 S11 ANG -46.49 -81.92 -106.07 -122.16 -133.99 -142.06 -148.74 -153.88 -158.33 -161.97 -174.56 176.89 169.88 163.33 156.42 150.06 MAG 13.764 11.335 9.135 7.476 6.157 5.251 4.576 4.062 3.646 3.308 2.262 1.721 1.391 1.166 1.002 0.879 S21 ANG 152.54 132.55 118.99 109.52 103.05 97.76 93.13 89.34 85.83 82.71 69.58 59.12 50.09 42.52 36.21 31.47 MAG 0.036 0.058 0.069 0.075 0.077 0.078 0.080 0.081 0.082 0.082 0.087 0.098 0.118 0.147 0.182 0.222 S12 ANG 66.4 50.3 40.9 35.5 33.0 31.6 31.0 31.4 32.0 33.1 41.9 53.1 62.5 68.6 71.3 71.8 MAG 0.901 0.742 0.618 0.533 0.460 0.414 0.382 0.363 0.350 0.339 0.328 0.342 0.376 0.415 0.458 0.498 S22 ANG -23.1 -38.6 -47.8 -53.5 -53.3 -55.7 -58.2 -59.5 -61.5 -63.3 -74.5 -86.9 -98.8 -109.4 -117.8 -125.3 0.068 0.134 0.192 0.250 0.394 0.478 0.551 0.619 0.682 0.751 1.012 1.152 1.122 1.042 0.939 0.877 K MAG1 (dB) 25.83 22.93 21.23 20.01 19.04 18.26 17.59 17.02 16.51 16.05 13.47 10.09 8.58 7.75 7.41 5.98 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135˚ S21 +90˚ S12 +45˚ j10 S11 0 10 25 50 100 0 +180˚ 2 4 6 8 1 0˚ -j10 S2 2 -j25 -j50 0.100 to 4.000GHz by 0.050 -j100 -135˚ -45˚ -90˚ 0.100 to 4.000GHz by 0.050 NE851M13 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 MAG 0.718 0.689 0.680 0.677 0.648 0.645 0.647 0.648 0.651 0.652 0.661 0.669 0.679 0.687 0.696 0.699 S11 ANG -62.67 -102.19 -124.30 -137.54 -147.55 -153.87 -158.99 -162.97 -166.43 -169.32 -179.34 173.47 167.37 161.58 155.30 149.56 MAG 22.758 16.867 12.737 10.068 8.180 6.913 5.980 5.282 4.725 4.275 2.907 2.212 1.795 1.515 1.313 1.161 S21 ANG 144.89 123.83 111.69 103.82 98.85 94.59 90.88 87.80 84.93 82.38 71.36 62.32 54.17 47.00 40.58 35.18 MAG 0.029 0.042 0.048 0.052 0.055 0.057 0.060 0.063 0.066 0.069 0.087 0.109 0.135 0.164 0.197 0.232 S12 ANG 61.8 47.7 42.0 40.1 40.8 41.9 43.5 45.4 47.2 49.2 57.6 63.9 67.6 69.6 70.1 69.6 MAG 0.823 0.615 0.486 0.408 0.335 0.296 0.270 0.253 0.243 0.234 0.226 0.241 0.274 0.311 0.353 0.393 S22 ANG -32.5 -50.6 -60.3 -66.1 -65.2 -67.9 -70.9 -72.1 -74.0 -75.8 -86.3 -97.3 -107.0 -115.5 -121.7 -127.3 K 0.135 0.239 0.334 0.423 0.582 0.679 0.755 0.819 0.871 0.922 1.059 1.097 1.061 1.013 0.947 0.901 MAG1 (dB) 28.99 26.05 24.22 22.85 21.74 20.81 19.98 19.23 18.55 17.92 13.75 11.18 9.73 8.96 8.24 6.99 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135˚ S21 +90˚ S12 +45˚ j10 S11 0 10 25 50 2 100 0 +180˚ 2 4 6 8 1 0˚ S2 -j10 -j25 -j50 0.100 to 4.000GHz by 0.050 -j100 -135˚ -45˚ -90˚ 0.100 to 4.000GHz by 0.050 NE851M13 VC = 3 V, IC = 20 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 MAG 0.592 0.610 0.620 0.626 0.610 0.610 0.613 0.615 0.620 0.621 0.632 0.639 0.648 0.654 0.662 0.664 S11 ANG -86.11 -124.37 -141.71 -151.34 -159.31 -163.96 -167.68 -170.58 -173.15 -175.39 176.71 170.54 165.15 159.90 154.05 148.76 MAG 33.025 21.656 15.554 12.032 9.710 8.162 7.032 6.194 5.529 4.996 3.387 2.578 2.096 1.775 1.546 1.376 S21 ANG 135.40 115.31 105.23 98.91 95.19 91.77 88.75 86.21 83.82 81.67 72.14 64.13 56.72 50.03 43.87 38.44 MAG 0.022 0.031 0.036 0.040 0.044 0.048 0.052 0.057 0.062 0.067 0.092 0.119 0.148 0.178 0.210 0.243 S12 ANG 57.5 48.3 47.6 49.1 52.1 54.4 56.5 58.6 60.3 61.8 66.6 69.0 69.7 69.5 68.7 67.5 MAG 0.710 0.483 0.370 0.309 0.241 0.212 0.194 0.181 0.173 0.167 0.166 0.183 0.214 0.248 0.285 0.321 S22 ANG -44.7 -65.2 -75.9 -82.6 -83.3 -87.6 -92.2 -94.3 -96.9 -99.4 -109.9 -118.5 -124.5 -129.5 -132.5 -135.5 0.243 0.402 0.532 0.635 0.781 0.862 0.917 0.956 0.983 1.010 1.059 1.064 1.035 1.005 0.963 0.929 K MAG1 (dB) 31.86 28.50 26.41 24.80 23.47 22.32 21.29 20.36 19.53 18.15 14.16 11.79 10.35 9.56 8.68 7.54 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE851M13 NONLINEAR MODEL SCHEMATIC CCBPKG 0.05 pF CCB 0.01 pF LBPKG 0.05 nH LCPKG 0.05 nH LB 0.25 nH Collector Q1 CCE 0.25 pF Base LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 137e-18 166 0.9871 20.4 50 80.4e-15 2.4 28.7 0.9889 2.7 0.021 532e-18 1.28 0.45 4 1 0 1.7 2.4e-12 0.87 0.34 0.65e-12 0.52 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.14 0.5 0 0.75 0 0.55 15e-12 0.1 2 0.03 0 1.0e-9 1.11 0 3 170e-15 1.65 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE851M13 0.01 pF 0.25 pF 0.25 nH 0.45 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz Bias: VCE = 1 V to 4 V, IC = 1 mA to 40 mA Date: 09/2001 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 01/27/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). 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