NE851M33-T3-A

DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel) • 8 mm wide embossed taping NE851M33-T3-A 10 kpcs/reel • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) SYMBOL RATINGS UNIT Collector to Base Voltage PARAMETER VCBO 9.0 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA Collector Current Total Power Dissipation 130 mW Junction Temperature Ptot Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NE851M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT – – 600 nA DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO VCB = 5 V, IE = 0 mA IEBO VEB = 1 V, IC = 0 mA – – 600 nA hFE Note 1 VCE = 1 V, IC = 5 mA 100 120 145 – fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 – GHz RF Characteristics Gain Bandwidth Product (1) Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 – GHz Insertion Power Gain (1) |S21e|2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 – dB Insertion Power Gain (2) |S21e| VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 – dB NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt – 1.9 2.5 dB Cre Note 2 VCB = 0.5 V, IC = 0 mA, f = 1 MHz – 0.6 0.8 pF 2 Noise Figure Reverse Transfer Capacitance Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION RANK FB Marking E7 hFE Value 100 to 145 NE851M33 TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) 200 150 130 100 50 0 100 Collector Current IC (mA) Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 25 50 75 100 125 0.4 0.2 2 4 6 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 0.1 0.01 0.001 10 VCE = 2 V 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 400 µ A 50 360 µ A 320 µ A 40 280 µ A 240 µ A 200 µ A 30 160 µ A 20 120 µ A 80 µ A 10 IB = 40 µ A 1 2 3 4 5 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) Collector Current IC (mA) 0.6 Collector to Base Voltage VCB (V) 1 0 f = 1 MHz 0.8 0 150 10 0.0001 0.4 1.0 Ambient Temperature TA (ºC) Collector Current IC (mA) Total Power Dissipation Ptot (mW) 250 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 6 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 7 1.0 NE851M33 TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 1 V 100 10 0.1 1,000 DC Current Gain hFE DC Current Gain hFE 1,000 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. VCE = 2 V 100 10 0.1 1 10 Collector Current IC (mA) 100 NE851M33 PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm) 0.64±0.05 (Bottom View) 0.15 0.125 0.15 0.285 1 3 0.125 0.57 2 E7 0.84±0.05 0.44±0.05 0.4 0.11 0.15 NE package code: M33 SOT number: – PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 06/07/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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