NE856M03-A

NPN SILICON TRANSISTOR NE856M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • TC 3 0.3±0.1 DESCRIPTION NEC's NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA pF 0.7 UNITS GHz dB dB 7.0 80 MIN 3.0 NE856M03 2SC5432 M03 TYP 4.5 1.4 10.0 145 1.0 1.0 1.5 2.5 MAX California Eastern Laboratories NE856M03 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 9.2e-16 110.3 1.01 18 1 4.89e-9 4.37 10.08 1.0 8 0.03 3.32e-11 3.95 0.33 1.26 2 0.05 6.63 2.8e-12 1.3 0.5 1.1e-12 0.7 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.55 0.3 0 0.75 0 0.5 4e-12 30 0.69 0.06 0 1e-9 1.11 0 3 1.56e-18 1.49 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 856M03 0.087e-12 0.16e-12 0.5e-9 0.6e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9 MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 10 V, IC = 0.5 mA to 10 mA Date: 11/98 (1) Gummel-Poon Model NE856M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 20 12 3 100 125 150 -65 to +150 PART NUMBER NE856M03-A NE856M03-T1-A QUANTITY ORDERING INFORMATION Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 500 VCE = 10 V FORWARD CURRENT GAIN vs. COLLECTOR CURRENT DC Forward Current Gain, hFE 2 4 6 8 10 12 300 200 Collector Current, IC (mA) 80 60 100 70 50 30 20 40 20 10 0 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) NE856M03 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 IM3 -70 VCE = 10 V VO = 100 dBµV/50 Ω RG = RL = 50 Ω -60 IM2 IM2, IM3 (dB) -50 -40 IM2 f = 90 + 100 MHz IM3 f = 2 X 200-190 MHz -30 20 30 40 50 60 70 Collector Current, IC (mA) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 06/10/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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