NE894M13

NPN SILICON TRANSISTOR NE894M13 FEATURES • • • • • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance IDEAL FOR > 3 GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO 25 GHz PROCESS OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.15+0.1 ñ0.05 0.7±0.05 0.5+0.1 ñ0.05 0.2+0.1 ñ0.05 (Bottom View) 0.3 0.35 2 1.0+0.1 ñ0.05 3 B7 0.7 0.35 0.15+0.1 ñ0.05 1 DESCRIPTION NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.1 0.1 0.2 0.2 0.125+0.1 ñ0.05 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE UNITS GHz dB pF nA nA dB MIN 17 11 – – – – NE894M13 2SC5787 M13 TYP 13 20 MAX – – SYMBOLS |S21E|2 |NF ICBO IEBO hFE Cre fT PARAMETERS AND CONDITIONS Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain2 at VCE = 1 V, IC = 5 mA Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz 0.22 – – – 1.4 0.30 100 100 100 2.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Collector to base capacitance when the emitter is grounded 50 California Eastern Laboratories NE894M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT 2 PARAMETERS UNITS V V V RATINGS 9 1.5 35 105 150 3.0 ORDERING INFORMATION PART NUMBER NE894M13-A NE894M13-T3-A QUANTITY 50 PCS (Non reel) 10 kpcs/reel Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature mA mW °C °C TJ TSTG -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance, Cre (pF) 150 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 f = 1 MHz Total Power Dissipation, Ptot (mW) Mounted on Glass epoxy PCB (1 .0 8 cm 2 x 1 . 0 mm (t) ) 125 105 0. 4 100 0. 3 75 0. 2 50 25 0. 1 0 0 0 2 4 6 8 10 0 25 50 75 100 125 150 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 40 V CE = 1 V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 µA 450 µA 400 µA 350 µA 30 300 µA 250 µA 20 200 µA 150 µA 10 100 µA Collector Current, IC (mA) 1 0. 1 0. 01 0. 00 1 I B = 5 00 µA 0. 000 1 0. 4 0 .5 0. 6 0 .7 0. 8 0 .9 1. 0 0 0 1 2 3 4 5 Collector Current, IC (mA) 10 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 28 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Gain Bandwidth Product, fT (GHz) V CE = 1 V f = 2 GHz 40 35 30 25 20 15 10 5 0 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY V CE = 1 V IC = 20 m A 24 20 16 12 8 4 0 MSG MA G |S 21 e |2 1 10 100 0. 1 1 10 Collector Current, IC (mA) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT V CE = 2 V f = 2 G Hz Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e| (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) V CE = 2 V f = 2 G Hz 16 MSG MA G 2 16 MSG 12 12 |S 21 e |2 8 8 4 |S 21 e |2 4 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 16 Insertion Power Gain, |S21e| (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) V CE = 1 V f = 4 GHz V CE = 2 V f = 4 GHz 16 12 2 MS G MA G 12 MS G MA G 8 |S 21 e |2 4 8 |S 21 e |2 4 0 1 10 100 0 1 10 Collector Current, IC (mA) Collector Current, IC (mA) 100 Associated Gain, Ga (dB) MA G NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga 20 5 Ga NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 Associated Gain, Ga (dB) 4 16 3 12 3 12 2 8 2 8 1 NF V CE = 1 V f = 1 GHz 4 1 NF V CE = 1 V f = 2 GHz 4 0 1 10 100 0 0 1 10 100 0 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, Ga (dB) Noise Figure, NF (dB) 4 16 Noise Figure, NF (dB) NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ S21 60˚ 150˚ j10 S12 30˚ S 11 0 10 25 50 100 0 180˚ 0˚ -j10 S 22 -j25 -j50 -j100 -150˚ -30˚ -120˚ -90˚ 0.100 to 12.000 GHz by 0.050 -60˚ 0.100 to 12.000GHz by 0.050 NE894M13 VC = 1 V, IC = 5 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.772 0.747 0.715 0.677 0.612 0.575 0.544 0.517 0.493 0.474 0.383 0.362 0.355 0.352 0.339 0.359 0.394 0.432 0.466 0.489 0.489 S11 ANG - 11.0 - 24.6 - 36.5 - 47.7 - 59.5 - 68.8 - 76.9 - 84.6 - 91.3 - 97.3 -135.0 -155.9 -175.7 169.2 158.2 145.9 132.7 121.6 110.0 99.5 92.9 MAG 13.002 12.548 11.948 11.241 10.457 9.699 8.993 8.364 7.756 7.228 4.155 2.920 2.253 1.821 1.561 1.390 1.251 1.137 1.026 0.930 0.878 S21 ANG 169.8 159.5 150.4 142.4 134.1 127.9 122.5 117.7 113.5 109.6 84.4 68.1 54.6 44.0 36.0 28.0 20.9 14.9 10.5 8.9 9.3 MAG 0.011 0.022 0.032 0.040 0.046 0.051 0.056 0.059 0.062 0.065 0.088 0.120 0.162 0.215 0.281 0.358 0.438 0.513 0.569 0.609 0.653 S12 ANG 85.6 76.8 70.6 66.2 61.3 58.2 56.5 54.9 54.1 53.6 58.8 67.4 72.0 73.4 72.6 68.5 62.5 55.6 48.7 43.9 40.4 MAG 0.966 0.928 0.883 0.835 0.758 0.707 0.658 0.623 0.590 0.558 0.411 0.383 0.412 0.476 0.512 0.522 0.523 0.521 0.543 0.572 0.567 S22 ANG - 8.4 - 15.8 - 22.5 - 28.3 - 31.4 - 35.7 - 39.1 - 41.6 - 44.1 - 45.9 - 59.5 - 73.2 - 88.5 - 98.4 -103.6 -114.0 -127.0 -142.1 -157.6 -165.7 -168.8 K 0.10 0.17 0.22 0.27 0.39 0.44 0.50 0.54 0.59 0.65 1.01 1.10 1.05 0.95 0.86 0.81 0.79 0.80 0.84 0.87 0.90 (dB) 30.55 27.54 25.75 24.50 23.57 22.79 22.09 21.50 20.94 20.46 16.27 11.97 10.08 9.28 7.44 5.89 4.56 3.45 2.56 1.84 1.28 MAG1 Note: 1. Gain Calculations: MAG = MAG = Maximum Available Gain MSG = Maximum Stable Gain |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ S21 60˚ 150˚ j10 S12 30˚ S 11 0 10 25 50 100 0 180˚ 0˚ -j10 S 22 -j25 -j50 -j100 -150˚ -30˚ -120˚ -90˚ 0.100 to 12.000 GHz by 0.050 -60˚ 0.100 to 4.000GHz by 0.050 NE894M13 VC = 1 V, IC = 20 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.401 0.374 0.345 0.323 0.290 0.282 0.277 0.274 0.273 0.271 0.272 0.275 0.278 0.268 0.243 0.262 0.300 0.343 0.386 0.417 0.423 S11 ANG - 25.4 - 50.1 - 69.6 - 85.0 -100.7 -111.9 -119.6 -126.5 -132.5 -137.0 -162.0 -176.0 167.1 153.9 146.2 138.9 129.8 122.0 112.1 102.2 96.7 MAG 29.774 26.263 22.629 19.474 16.742 14.691 13.024 11.685 10.574 9.642 5.122 3.539 2.723 2.223 1.922 1.720 1.565 1.439 1.316 1.199 1.123 S21 ANG 160.5 145.4 133.7 124.8 117.7 112.3 108.0 104.4 101.2 98.5 80.3 67.7 56.9 47.9 40.4 32.9 25.9 19.5 13.9 10.5 8.8 MAG 0.009 0.018 0.024 0.029 0.034 0.038 0.043 0.047 0.051 0.056 0.100 0.147 0.196 0.245 0.300 0.360 0.421 0.482 0.532 0.572 0.617 S12 ANG 82.2 74.2 71.0 68.3 67.8 67.6 68.0 68.5 69.0 69.5 72.3 71.6 69.5 66.9 64.6 60.8 56.4 51.5 46.5 42.8 40.2 MAG 0.879 0.786 0.689 0.607 0.506 0.450 0.405 0.374 0.349 0.324 0.228 0.221 0.261 0.331 0.369 0.379 0.384 0.389 0.425 0.472 0.488 S22 ANG - 15.8 - 28.2 - 37.3 - 43.9 - 46.3 - 50.3 - 53.1 - 54.5 - 56.2 - 57.3 - 66.9 - 80.0 - 95.5 -101.9 -102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6 K 0.40 0.45 0.54 0.63 0.75 0.81 0.86 0.90 0.93 0.95 1.06 1.05 1.03 0.99 0.95 0.91 0.89 0.88 0.88 0.88 0.88 (dB) 35.10 31.74 29.72 28.21 26.95 25.83 24.84 23.94 23.14 22.37 15.65 12.37 10.35 9.58 8.07 6.80 5.70 4.75 3.93 3.21 2.60 MAG1 Note: 1. Gain Calculations: MAG = MAG = Maximum Available Gain MSG = Maximum Stable Gain |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ S21 60˚ 150˚ j10 S12 30˚ S 11 0 10 25 50 100 0 180˚ 0˚ -j10 S 22 -j25 -j50 -j100 -150˚ -30˚ -120˚ -90˚ -60˚ 0.100 to 12.000 GHz by 0.050 0.100 to 12.000GHz by 0.050 NE894M13 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.634 0.601 0.559 0.515 0.451 0.417 0.391 0.369 0.351 0.337 0.279 0.266 0.262 0.255 0.237 0.259 0.300 0.347 0.392 0.425 0.433 S11 ANG - 14.2 - 30.0 - 43.3 - 55.3 - 67.4 - 77.1 - 84.8 - 92.2 - 98.6 -104.1 -137.6 -155.9 -175.2 170.3 161.9 151.8 139.9 129.8 117.8 106.1 99.2 MAG 21.168 19.847 18.259 16.598 14.913 13.497 12.240 11.177 10.239 9.431 5.194 3.616 2.787 2.259 1.936 1.731 1.571 1.439 1.303 1.170 1.080 S21 ANG 166.5 154.5 144.2 135.6 127.5 121.5 116.5 112.3 108.5 105.2 83.8 69.6 57.5 47.6 39.8 32.0 24.6 17.8 12.0 8.7 7.5 MAG 0.010 0.017 0.024 0.029 0.034 0.038 0.042 0.045 0.049 0.052 0.084 0.123 0.168 0.217 0.276 0.344 0.418 0.493 0.555 0.600 0.648 S12 ANG 85.7 75.7 70.8 67.6 64.9 63.7 63.5 63.2 63.5 63.9 70.4 74.0 74.7 73.9 72.7 69.3 64.4 58.5 52.3 47.5 44.1 MAG 0.945 0.890 0.826 0.763 0.676 0.621 0.572 0.539 0.510 0.481 0.363 0.345 0.373 0.439 0.483 0.499 0.505 0.508 0.535 0.573 0.581 S22 ANG - 10.0 - 18.5 - 25.6 - 31.2 - 33.5 - 37.1 - 39.6 - 41.3 - 42.9 - 43.9 - 52.7 - 64.5 - 79.7 - 89.6 - 93.7 -102.7 -114.4 -128.5 -144.5 -153.9 -157.6 K 0.19 0.28 0.36 0.43 0.56 0.62 0.68 0.73 0.78 0.82 1.04 1.05 1.00 0.93 0.86 0.81 0.78 0.77 0.78 0.80 0.82 (dB) 33.43 30.64 28.79 27.51 26.40 25.49 24.65 23.93 23.24 22.61 16.74 13.31 11.92 10.17 8.47 7.02 5.75 4.65 3.71 2.90 2.22 MAG1 Note: 1. Gain Calculations: MAG = MAG = Maximum Available Gain MSG = Maximum Stable Gain |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 NONLINEAR MODEL SCHEMATIC CCBPKG 0.05 pF CCB 0.01 pF LBPKG 0.05 nH LCPKG 0.05 nH LB 0.3 nH Q1 CCE 0.4 pF Collector Base LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters BF VAF IKF NE BR ISE NF IS Q1 137e-18 129 0.9992 22.4 2.8 2.5 Parameters XCJC CJS MJS FC TF XTF VTF ITF TR PTF EG VJS MJC Q1 0.24 0.3 0 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE894M13 0.01 pF 0.4 pF 0.3 nH 0.42 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH 0.75 0 0.55 0.05 0.005 1.0e-9 1.11 0 3 117e-15 1.34 0 0.5 229e-15 81.7 1.9 5e-12 VAR IKR ISC NC RE RB RBM IRB RC NR 0.9944 0.018 1.17 0.75 5 3 6 227e-18 MODEL TEST CONDITIONS Frequency: 0.1 to 10 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 20 mA Date: 11/2001 XTB XTI AF KF 0.005 0.68e-12 0.92 0.16e-12 0.64 0.26 CJE MJE CJC VJC VJE (1) Gummel-Poon Model CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS Internet: http://WWW.CEL.COM 02/14/2007 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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