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NESG2030M04-EVNF16

NESG2030M04-EVNF16

  • 厂商:

    CEL

  • 封装:

    -

  • 描述:

    EVAL BOARD FOR NESG2030 1.6GHZ

  • 详情介绍
  • 数据手册
  • 价格&库存
NESG2030M04-EVNF16 数据手册
NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE DC SYMBOLS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA IEBO Emitter Cutoff Current at VEB = 0.5 V, IC = 0 nA hFE DC Current Gain2 at VCE = 2 V, IC = 5 mA Cre Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz pF 0.17 0.22 NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT dB 0.9 1.1 Ga Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT GHz 16 MSG RF PARAMETERS AND CONDITIONS NESG2030M04 2SC5761 M04 |S21E|2 200 200 200 400 Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 18 20 Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 16 18 P1dB Output Power at 1 dB compression point VCE = 2 V, IC = 20 mA, f = 2 GHz dBm 12 OIP3 Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz dBm 22 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 22, 2005 NESG2030M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) THERMAL RESISTANCE SYMBOLS PARAMETERS UNITS RATINGS SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 8.0 Rth j-c Junction to Case Resistance °C/W 150 VCEO Collector to Emitter Voltage V 2.3 VEBO Emitter to Base Voltage V 1.2 Collector Current mA 35 PT2 Total Power Dissipation mW 80 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 IC Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 • 1.0 mm (t) glass epoxy substrate TYPICAL PERFORMANCE CURVES ORDERING INFORMATION (Solder Contains Lead) PART NUMBER NESG2030M04 NESG2030M04-T2 ORDERING INFORMATION (Pb-Free) PART NUMBER NESG2030M04-A NESG2030M04-T2-A DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 40 VCE = 2 V 35 190 μa 30 160 μa 25 130 μa DC Current Gain, hFE Collector Current, Ic (mA) QUANTITY 50 pcs(non reel) 3 kpcs/reel (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 μa 20 15 70 μa 10 40 μa 5 IB = 10 μa 100 10 0 0 1 2 0.1 3 GAIN BANDWIDTH vs. COLLECTOR CURRENT 100 10 INSERTION POWER GAIN vs. FREQUENCY 40 30 Insertion Power Gain, |S21e|2 (dB) VCE = 2 V f = 2 GHz 35 1 Collector Current, lC (mA) Collector to Emitter Voltage, VCE (V) Gain Bandwdth, fT (GHz) QUANTITY 50 pcs(non reel) 3 kpcs/reel 30 25 20 15 10 5 VCE = 2 V IC = 20 mA 25 20 15 10 5 0 0 0 10 Collector Current, IC (mA) 100 0.1 1 Frequency, f (GHz) 10 NESG2030M04 TYPICAL PERFORMANCE CURVES (TA = 25°C) MAXIMUM STABLE GAIN, INSERTION POWER GAIN vs. COLLECTOR CURRENT MAXIMUM STABLE GAIN, INSERTION POWER GAIN vs. COLLECTOR CURRENT 30 30 25 MSG 20 |S21e|2 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21eI2 15 10 5 VCE = 2 V f = 2 GHz 25 MSG 20 |S21e|2 15 10 5 0 0 1 100 10 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. COLLECTOR CURRENT OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 25 30 VCE = 2 V f = 5 GHz Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) 100 10 Collector Current, IC (mA) Collector Current, IC (mA) 20 Output Power, Pout (dBm) 25 20 15 MAG 10 |S21e|2 5 80 VCE = 2 V, f = GHz Icq = 5 mA(RF OFF) 70 60 15 Pout 10 50 5 40 0 30 20 -5 IC 10 -10 0 1 -15 -20 100 10 0 -15 -10 -5 0 5 Input Power, Pin (V) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 70 25 VCE = 2 V f = 1.5 GHz VCE = 2 V Icq = 5 mA f = 2 GHz offset = 1 MHz Noise Figure, NF (dB) Third Order Intermodulation Distortion, IM3 (dBc) Collector Current, IC (mA) 60 50 40 30 20 Ga 4 20 3 15 2 10 5 1 10 NF 0 0 -5 0 5 10 15 Output Power (each tone), Pout (mA) Collector Current, IC (mA) 1 20 1 10 Collector Current, IC (mA) 0 100 Associated Gain, GA (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21eI2 VCE = 2 V f = 1 GHz NESG2030M04 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 5 25 15 2 10 5 1 20 Ga 3 15 2 10 NF 1 5 Associated Gain, GA (dB) 3 4 Noise Figure, NF (dB) 20 Ga Associated Gain, GA (dB) 4 Noise Figure, NF (dB) 25 VCE = 2 V f = 2.5 GHz VCE = 2 V f = 2 GHz NF 0 100 0 10 1 Collector Current, lC (mA) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 25 25 VCE = 2 V f = 4 GHz 20 Ga 3 2 15 10 5 1 4 Noise Figure, NF (dB) 4 Associated Gain, GA (dB) VCE = 2 V f = 3 GHz Noise Figure, NF (dB) 10 Collector Current, IC (mA) 5 20 Ga 3 2 5 1 NF 0 100 0 1 10 0 1 Collector Current, IC (mA) 25 4 20 3 15 Ga 10 NF 1 0 10 Collector Current, IC (mA) 5 0 100 Associated Gain, GA (dB) Noise Figure, NF (dB) VCE = 2 V f = 5 GHz 2 10 Collector Current, lC (mA) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 15 10 NF 1 0 100 0 0 100 Associated Gain, GA (dB) 1 NESG2030M04 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NFMIN GA (GHz) (dB) (dB) ΓOPT MAG ANG Rn/50 TYPICAL NOISE PARAMETERS (CONT') FREQ. NFMIN GA (GHz) (dB) (dB) ΓOPT MAG ANG Rn/50 VCE = 2 V, IC = 20 mA VCE = 2 V, IC = 5 mA 0.8 0.77 22.62 0.440 22.0 0.21 2.0 1.26 18.16 0.064 90.1 0.15 0.9 0.77 21.79 0.433 25.3 0.21 2.2 1.27 17.40 0.072 106.5 0.15 1.0 0.78 21.03 0.426 28.6 0.20 2.4 1.28 16.71 0.083 119.5 0.14 1.1 0.78 20.33 0.418 32.0 0.20 2.5 1.28 16.39 0.090 124.8 0.14 0.19 2.7 1.30 15.79 0.105 133.5 0.14 0.19 3.0 1.32 14.97 0.128 143.2 0.13 1.36 13.81 0.159 154.7 0.13 1.2 1.3 0.79 0.79 19.69 19.10 0.410 0.402 35.5 39.0 1.4 0.80 18.56 0.394 42.6 0.18 3.5 1.5 0.81 18.05 0.386 46.3 0.18 4.0 1.42 12.84 0.175 164.5 0.12 1.7 0.82 17.13 0.372 54.0 0.17 4.5 1.48 12.02 0.169 176.7 0.12 1.9 0.84 16.31 0.359 62.1 0.16 2.0 0.85 15.94 0.354 66.3 0.16 2.2 0.87 15.26 0.345 74.9 0.15 2.4 0.89 14.64 0.340 83.6 0.14 2.5 0.91 14.36 0.338 87.9 0.14 2.7 0.93 13.83 0.338 96.4 0.13 3.0 0.98 13.12 0.342 108.6 0.12 3.5 1.06 12.12 0.354 126.4 0.11 4.0 1.15 11.31 0.354 141.4 0.09 4.5 1.26 10.63 0.325 155.7 0.08 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M04 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD VCE = 2 V, IC = 10 mA 0.8 0.95 24.28 0.264 18.6 0.18 0.9 0.95 23.43 0.261 21.8 0.18 1.0 0.95 22.65 0.257 25.1 0.18 1.1 0.95 21.93 0.253 28.5 0.17 0.95 21.27 0.249 32.0 0.17 1.3 0.95 20.65 0.244 35.6 0.17 1.4 0.96 20.08 0.239 39.3 0.17 1.5 0.96 19.54 0.234 43.2 0.16 1.7 0.96 18.56 0.226 51.5 0.16 1.9 0.97 17.70 0.219 60.4 0.15 2.0 0.98 17.30 0.216 65.0 0.15 2.2 0.99 16.56 0.213 74.6 0.14 2.4 1.00 15.89 0.213 84.2 0.14 2.5 1.01 15.58 0.214 88.9 0.13 2.7 1.03 15.00 0.219 98.1 0.13 3.0 1.06 14.23 0.229 108.6 0.12 3.5 1.12 13.13 0.249 110.7 0.11 4.0 1.19 12.23 0.258 142.4 0.10 4.5 1.27 11.48 0.243 156.3 0.10 2.05–0.1 1.25–0.1 +0.1 0.40-0.06 2 0.60 2.0 –0.1 1.25 0.65 1 +0.1 0.30-0.05 (Leads 1, 3, 4) 3 T16 1.2 0.65 1.30 0.65 4 VCE = 2 V, IC = 20 mA 0.8 1.26 25.33 0.082 14.2 0.17 0.9 1.25 24.45 0.081 17.4 0.17 1.0 1.25 23.65 0.079 20.9 0.17 1.1 1.25 22.91 0.076 24.9 0.17 1.2 1.25 22.23 0.074 29.4 0.17 1.3 1.25 21.60 0.071 34.5 0.16 1.4 1.25 21.01 0.068 40.4 0.16 1.5 1.25 20.46 0.065 47.1 0.16 1.7 1.25 19.46 0.061 63.0 0.15 1.9 1.26 18.57 0.062 81.1 0.15 0.59–0.05 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base 0.11 +0.1 -0.05 NESG2030M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NESG2030M04 Vc = 2.000 V, Ic = 5.000 mA NESG2030M04 Vc = 2.000 V, Ic = 5.000 mA j50 +90° +120° +60° j100 j25 S21 +150° +30° j10 +180° 0 10 25 +0° 50 S12 S22 -j10 -150° -30° S11 -j25 -120° -j100 NESG2030M04 VC = 2 V, IC = 5 mA FREQUENCY 0.100 to 12.000GHz by 0.100 0.100 to 12.000GHz by 0.100 S11 S21 GHz MAG ANG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 8.00 9.00 10.00 11.00 12.00 0.880 0.917 0.912 0.884 0.870 0.832 0.815 0.785 0.755 0.734 0.703 0.685 0.663 0.644 0.625 0.608 0.590 0.577 0.565 0.552 0.543 0.533 0.526 0.521 0.514 0.511 0.507 0.504 0.502 0.498 0.495 0.496 0.502 0.512 0.526 0.544 0.564 0.590 0.645 0.700 0.751 0.789 0.809 - 15.9 - 16.4 - 22.9 - 31.7 - 37.6 - 45.4 - 52.2 - 59.0 - 65.4 - 71.6 - 77.9 - 83.7 - 89.9 - 95.4 -100.9 -106.1 -111.5 -116.7 -121.4 -126.2 -131.2 -135.6 -140.1 -144.3 -148.5 -152.6 -156.5 -160.3 -163.7 -167.6 176.3 161.7 148.2 135.5 123.3 112.1 101.8 92.5 76.9 65.4 55.9 46.7 37.0 Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain -60° -90° -j50 S12 MAG ANG 11.079 11.423 10.960 10.799 10.505 10.169 9.830 9.524 9.156 8.829 8.446 8.165 7.848 7.554 7.255 6.959 6.714 6.482 6.206 5.992 5.811 5.598 5.404 5.214 5.052 4.901 4.748 4.607 4.463 4.358 3.814 3.399 3.067 2.802 2.577 2.380 2.198 2.036 1.746 1.499 1.293 1.141 1.040 176.4 166.9 160.1 153.7 148.6 143.2 138.3 133.2 128.9 124.6 120.6 116.5 112.8 109.3 105.9 102.6 99.5 96.5 93.7 90.9 88.1 85.6 83.2 80.8 78.4 76.1 73.8 71.8 69.6 67.5 57.7 48.6 39.8 31.3 22.9 14.8 6.7 - 1.1 - 16.1 - 30.0 - 43.0 - 55.2 - 66.6 MAG 0.010 0.020 0.028 0.036 0.043 0.049 0.055 0.060 0.065 0.069 0.073 0.076 0.079 0.082 0.084 0.086 0.088 0.090 0.091 0.092 0.094 0.095 0.096 0.097 0.098 0.099 0.100 0.101 0.102 0.103 0.107 0.111 0.116 0.121 0.125 0.130 0.134 0.139 0.144 0.149 0.151 0.155 0.163 MAG1 S22 ANG MAG 81.3 76.8 71.1 66.4 62.5 58.6 55.2 51.6 48.9 46.2 43.6 41.2 38.9 36.9 35.0 33.2 31.6 30.1 28.7 27.4 26.0 25.0 23.9 22.9 22.0 21.1 20.3 19.4 18.7 18.0 14.8 12.0 9.5 7.1 4.3 1.7 - 1.4 - 4.5 - 10.7 - 16.8 - 23.1 - 29.3 - 35.4 1.072 0.972 0.917 0.884 0.848 0.820 0.784 0.742 0.721 0.686 0.663 0.631 0.606 0.582 0.560 0.538 0.521 0.502 0.486 0.470 0.454 0.442 0.429 0.418 0.407 0.398 0.386 0.378 0.369 0.361 0.327 0.298 0.273 0.249 0.226 0.206 0.192 0.183 0.179 0.185 0.190 0.205 0.228 ANG 1.2 - 13.5 - 19.9 - 24.8 - 30.7 - 34.6 - 39.2 - 43.4 - 46.7 - 50.5 - 53.6 - 57.1 - 59.8 - 62.9 - 65.5 - 68.1 - 70.5 - 72.9 - 74.8 - 77.0 - 79.2 - 81.1 - 82.4 - 84.3 - 85.7 - 87.2 - 88.8 - 90.1 - 91.4 - 92.9 - 98.3 -102.6 -107.0 -111.5 -117.7 -125.8 -135.4 -147.1 -172.0 163.7 141.0 121.6 111.6 K (dB) 30.33 27.67 25.95 24.77 23.89 23.14 22.51 21.98 21.49 21.07 20.65 20.31 19.97 19.65 19.36 19.08 18.82 18.58 18.33 18.12 17.92 17.70 17.50 17.29 17.11 16.95 16.76 16.59 16.42 16.27 15.52 14.85 13.45 12.05 11.07 10.30 9.60 9.05 8.09 7.32 6.69 6.26 6.00 - 0.13 0.08 0.14 0.17 0.18 0.21 0.23 0.26 0.29 0.31 0.34 0.36 0.39 0.41 0.44 0.46 0.49 0.51 0.54 0.56 0.58 0.61 0.63 0.65 0.68 0.70 0.72 0.74 0.76 0.78 0.87 0.95 1.02 1.07 1.11 1.15 1.18 1.19 1.21 1.20 1.19 1.16 1.11 NESG2030M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 NESG2030M04 Vc = 2.000 V, Ic = 10.000 mA +90° j25 +120° NESG2030M04 Vc = 2.000 V, Ic = 10.000 mA j100 +60° S21 +150° +30° j10 0 10 25 +180° 50 +0° S12 S22 -j10 -150° S11 -30° 0.100 to 12.000GHz by 0.100 -j25 0.100 to 12.000GHz by 0.100 -j100 -120° -60° -90° -j50 NESG2030M04 VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 GHz MAG ANG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 8.00 9.00 10.00 11.00 12.00 0.843 0.861 0.842 0.802 0.776 0.730 0.704 0.667 0.635 0.610 0.581 0.561 0.541 0.524 0.508 0.494 0.481 0.471 0.462 0.453 0.448 0.442 0.439 0.437 0.433 0.434 0.431 0.431 0.430 0.430 0.434 0.439 0.448 0.462 0.478 0.498 0.521 0.549 0.609 0.670 0.724 0.765 0.786 - 18.3 - 21.3 - 29.5 - 40.1 - 47.3 - 56.4 - 64.0 - 71.6 - 78.8 - 85.4 - 92.3 - 98.2 -104.7 -110.4 -116.0 -121.3 -126.8 -132.0 -136.7 -141.5 -146.3 -150.6 -154.8 -158.9 -162.8 -166.7 -170.3 -173.8 -177.0 179.5 164.9 151.7 139.5 128.0 117.0 106.8 97.3 88.8 74.5 63.9 55.1 46.3 36.9 Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain S12 MAG ANG 17.945 18.266 17.254 16.649 15.854 15.040 14.268 13.490 12.769 12.100 11.435 10.861 10.311 9.810 9.335 8.887 8.494 8.130 7.765 7.450 7.166 6.881 6.624 6.378 6.156 5.954 5.751 5.571 5.391 5.238 4.558 4.043 3.636 3.310 3.034 2.795 2.582 2.391 2.052 1.767 1.530 1.352 1.238 175.1 163.8 155.5 148.2 142.3 136.3 131.0 125.7 121.3 117.0 113.0 109.2 105.7 102.4 99.3 96.3 93.4 90.7 88.2 85.7 83.2 80.9 78.7 76.5 74.4 72.4 70.3 68.4 66.5 64.6 55.6 47.1 38.9 30.9 23.0 15.3 7.7 0.2 - 14.1 - 27.6 - 40.3 - 52.4 - 63.6 MAG 0.010 0.019 0.026 0.034 0.040 0.045 0.050 0.054 0.057 0.060 0.063 0.065 0.068 0.070 0.072 0.074 0.075 0.077 0.079 0.080 0.081 0.083 0.084 0.086 0.087 0.089 0.090 0.091 0.093 0.095 0.102 0.110 0.117 0.125 0.133 0.140 0.147 0.152 0.160 0.164 0.167 0.169 0.174 MAG1 S22 ANG MAG 82.5 73.7 67.8 63.3 58.8 55.3 52.3 49.3 46.6 44.6 42.6 41.0 39.4 38.0 36.7 35.5 34.6 33.7 32.7 32.0 31.3 30.6 29.9 29.2 28.8 28.1 27.6 27.2 26.6 26.2 23.4 21.0 18.0 14.7 11.1 7.4 3.5 - 0.5 - 8.7 - 16.5 - 24.1 - 31.6 - 38.7 1.060 0.951 0.882 0.835 0.790 0.749 0.706 0.656 0.629 0.591 0.563 0.532 0.506 0.482 0.461 0.440 0.424 0.407 0.392 0.378 0.365 0.354 0.343 0.333 0.323 0.316 0.306 0.300 0.291 0.285 0.255 0.229 0.206 0.184 0.167 0.155 0.152 0.155 0.175 0.199 0.218 0.240 0.253 ANG - 0.7 - 17.8 - 25.7 - 32.1 - 39.3 - 44.1 - 49.5 - 54.5 - 58.3 - 62.6 - 66.1 - 70.0 - 73.1 - 76.5 - 79.3 - 82.3 - 84.8 - 87.6 - 89.7 - 92.2 - 94.6 - 96.8 - 98.4 -100.6 -102.1 -103.9 -105.9 -107.3 -109.1 -110.5 -117.4 -123.2 -129.4 -136.6 -146.4 -158.5 -172.3 173.5 147.8 125.4 104.0 87.7 79.4 K (dB) 32.56 29.85 28.15 26.93 26.01 25.26 24.57 24.01 23.51 23.03 22.59 22.20 21.83 21.47 21.14 20.82 20.52 20.25 19.95 19.68 19.45 19.19 18.95 18.71 18.48 18.26 18.06 17.85 17.64 17.43 16.51 15.19 13.59 12.56 11.69 10.97 10.32 9.78 8.83 8.07 7.43 6.97 6.66 - 0.11 0.12 0.19 0.22 0.25 0.28 0.31 0.35 0.38 0.41 0.45 0.48 0.51 0.54 0.57 0.60 0.62 0.65 0.67 0.70 0.72 0.75 0.77 0.79 0.81 0.82 0.84 0.86 0.88 0.89 0.96 1.01 1.05 1.07 1.10 1.11 1.12 1.13 1.14 1.14 1.13 1.12 1.09 NESG2030M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90° j50 j25 NESG2030M04 Vc = 2.000 V, Ic = 20.000 mA NESG2030M04 Vc = 2.000 V, Ic = 20.000 mA j100 +120° S21 +60° +150° S11 +30° j10 10 0 25 +180° 50 +0° S12 S22 0.100 to 12.000GHz by 0.100 -j10 -150° 0.100 to 12.000GHz by 0.100 -j25 -j100 -30° -120° -60° -90° -j50 NESG2030M04 VDS = 2 V, IDS = 20 mA FREQUENCY S11 S21 GHz MAG ANG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 8.00 9.00 10.00 11.00 12.00 0.786 0.783 0.750 0.700 0.667 0.619 0.590 0.554 0.525 0.502 0.479 0.462 0.447 0.435 0.423 0.414 0.406 0.401 0.395 0.391 0.389 0.387 0.386 0.387 0.386 0.389 0.388 0.389 0.390 0.391 0.399 0.407 0.418 0.432 0.450 0.472 0.496 0.525 0.588 0.651 0.707 0.750 0.771 - 21.3 - 27.1 - 36.9 - 49.4 - 57.6 - 67.9 - 76.2 - 84.4 - 92.1 - 99.0 -106.4 -112.4 -119.0 -124.8 -130.5 -135.7 -141.2 -146.1 -150.8 -155.4 -160.0 -164.0 -168.0 -171.7 -175.4 -178.9 177.9 174.7 171.7 168.5 155.4 143.5 132.5 122.0 112.0 102.6 93.8 85.9 72.5 62.5 54.3 45.8 36.6 Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain S12 MAG1 S22 MAG ANG MAG ANG MAG 25.785 25.691 23.773 22.359 20.800 19.318 17.984 16.687 15.577 14.563 13.636 12.805 12.055 11.384 10.772 10.209 9.703 9.243 8.810 8.424 8.071 7.735 7.433 7.147 6.886 6.649 6.413 6.207 6.003 5.819 5.046 4.465 4.009 3.642 3.333 3.066 2.832 2.621 2.251 1.940 1.682 1.488 1.367 173.5 160.2 150.7 142.5 136.0 129.8 124.4 119.2 114.9 110.8 107.0 103.5 100.2 97.2 94.3 91.6 89.0 86.5 84.2 82.0 79.7 77.6 75.6 73.6 71.7 69.8 67.9 66.1 64.3 62.6 54.1 46.1 38.3 30.7 23.1 15.6 8.3 1.1 - 12.7 - 25.9 - 38.3 - 50.2 - 61.2 0.009 0.018 0.025 0.031 0.036 0.040 0.044 0.047 0.050 0.053 0.055 0.057 0.059 0.061 0.063 0.065 0.067 0.069 0.071 0.072 0.074 0.076 0.078 0.080 0.082 0.083 0.085 0.088 0.089 0.091 0.101 0.111 0.121 0.131 0.139 0.148 0.155 0.162 0.170 0.175 0.177 0.178 0.182 84.5 70.6 64.7 60.2 56.6 53.2 50.7 48.2 46.7 45.2 43.8 42.7 41.8 41.1 40.2 39.5 38.9 38.4 38.0 37.4 36.9 36.5 36.2 35.5 35.2 34.6 34.1 33.5 33.3 32.7 30.0 27.0 23.4 19.4 15.1 10.9 6.2 1.6 - 7.4 - 16.1 - 24.6 - 32.8 - 40.3 1.044 0.924 0.840 0.778 0.725 0.675 0.628 0.575 0.546 0.510 0.482 0.453 0.429 0.408 0.390 0.372 0.358 0.345 0.332 0.321 0.311 0.303 0.293 0.286 0.279 0.272 0.265 0.260 0.254 0.249 0.226 0.205 0.187 0.171 0.163 0.164 0.172 0.186 0.221 0.254 0.282 0.306 0.316 ANG - 2.9 - 22.3 - 31.8 - 39.8 - 47.9 - 53.5 - 59.6 - 65.2 - 69.2 - 74.0 - 77.8 - 82.1 - 85.5 - 89.2 - 92.3 - 95.7 - 98.3 -101.5 -103.9 -106.7 -109.3 -111.8 -113.8 -116.1 -118.1 -120.2 -122.3 -124.1 -126.1 -127.7 -136.1 -143.5 -152.0 -161.7 -173.7 173.3 160.4 148.1 127.1 107.8 88.7 73.7 64.9 K (dB) 34.58 31.53 29.79 28.59 27.61 26.80 26.10 25.48 24.94 24.41 23.95 23.50 23.08 22.69 22.32 21.96 21.61 21.27 20.95 20.65 20.37 20.05 19.79 19.53 19.25 19.02 18.76 18.51 18.27 18.05 16.90 14.98 13.81 12.87 12.05 11.36 10.73 10.20 9.26 8.49 7.85 7.36 7.01 - 0.13 0.16 0.25 0.29 0.32 0.37 0.40 0.45 0.49 0.52 0.56 0.60 0.63 0.66 0.69 0.72 0.74 0.76 0.79 0.81 0.83 0.85 0.87 0.88 0.90 0.91 0.92 0.93 0.95 0.96 1.00 1.03 1.05 1.07 1.08 1.09 1.09 1.10 1.10 1.10 1.10 1.09 1.08 NESG2030M04 NESG2030M04 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) ADDITIONAL PARAMETERS Parameters NESG2030M04 Parameters Q1 Parameters Q1 IS 2.42e-13 MJC 0.16 CCB 0.07e-12 1 CCE 0.05e-12 BF 382 XCJC NF 1.025 CJS 0 LB 0.9e-9 VAF 87 VJS 0.75 LC 0.5e-9 0 LE 0.14e-9 IKF 100 MJS ISE 5.2e-13 FC 0.5 CCBPKG 0.001e-12 NE 2.806 TF 3e-12 CCEPKG 0.2e-12 BR 15.7 XTF 2 CBEPK 0.1e-12 NR 1.02 VTF 0.1 LBX 0.2e-9 VAR 1.307 ITF 0.001 LCX 0.2e-9 IKR 0.037 PTF 0 LEX 0.1e-9 ISC 9e-14 TR 50e-12 NC 2.194 EG 1.11 RE 2.2 XTB 0 RB 4 XTI 3 RBM 1 KF 120e-15 IRB 0.007 AF 1.37 RC 4.2 CJE 0.4e-12 VJE 0.98 MJE 0.25 CJC 0.12e-12 VJC 0.63 MODEL RANGE Frequency: 0.1 to 12 GHz Bias: VCE = 0.5 V to 3 V, IC = 1 mA to 30 mA Date: 12/2001 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
NESG2030M04-EVNF16
物料型号:NESG2030M04 器件简介:NPN SiGe高频晶体管,使用NEC的SiGe工艺制造,适用于100MHz至10GHz以上的应用,具有低噪声和高最大稳定增益。

引脚分配:1. Emitter 2. Collector 3. Emitter 4. Base 参数特性:过渡频率60 GHz,低噪声系数0.9 dBm(2 GHz时),最大稳定增益20 dB(2 GHz时),新低轮廓M04封装,仅0.59 mm高,平坦的引脚样式提供更好的射频性能。

功能详解:适用于低电压/低电流性能优越的场合,理想用于移动通信系统中所有LNA和振荡器要求。

应用信息:便携式无线应用的理想选择,如移动通信系统。

封装信息:SOT-343平面引脚样式,以获得更好的射频性能。


NESG2030M04是NEC公司制造的一款NPN型SiGe高频晶体管,适用于广泛的射频应用。

它采用先进的SiGe工艺技术,具有60GHz的典型转换频率,能够在100MHz至超过10GHz的频率范围内工作。

这款晶体管的直流电流输入最大为35mA,提供了从250μA到25mA的可用电流范围。

它特别适合低电压和低电流的应用场景。


NESG2030M04的噪声系数在2GHz时为0.9dB,这使得它在低噪声应用中非常有用。

此外,它的最大稳定增益在2GHz时为20dB,这表明它能够在保持信号质量的同时提供显著的增益。


这款晶体管采用了新的低轮廓M04封装,这种封装的特点是高度仅为0.59mm,并且采用平面引脚样式,有助于提高射频性能。

它非常适合用于便携式无线设备,如移动通信系统中的低噪声放大器(LNA)和振荡器。


NESG2030M04的封装细节包括四个引脚,其中1号和3号引脚为发射极,2号引脚为集电极,4号引脚为基极。

它的热阻从结到外壳的热阻为150°C/W,这有助于在高功率应用中保持稳定的性能。


NESG2030M04的订购信息包括含铅和无铅版本,分别以不同的后缀标记。

含铅版本的型号为NESG2030M04和NESG2030M04-T2,而无铅版本则为NESG2030M04-A和NESG2030M04-T2-A。


NESG2030M04的绝对最大额定值包括8.0V的集电极到基极电压(VCBO),2.3V的集电极到发射极电压(VCEO),1.2V的发射极到基极电压(VEBO),35mA的集电极电流(Ic),80mW的总功率耗散(Pr2),150°C的结温(TJ),以及-65至+150°C的存储温度(TSTG)。


NESG2030M04的典型性能曲线包括集电极电流与集电极到发射极电压的关系,增益带宽与集电极电流的关系,以及热阻等。

此外,还提供了在不同频率下的噪声参数,包括最小噪声系数(NFMIN),关联增益(GA),最佳工作电流(IOPT),以及输入和输出反射系数(Rn/50)。


NESG2030M04的外形尺寸为M04扁平引脚4引脚超小型封装,具体尺寸数据在文档中有详细说明。

此外,还提供了NESG2030M04在不同偏置条件下的典型散射参数,这些参数对于设计和优化射频电路非常重要。


NESG2030M04的非线性模型包括了BJT非线性模型参数,这些参数对于模拟和分析晶体管在不同工作条件下的性能非常有用。

这些参数包括饱和电流(IS),最大直流电流增益(BF),电流增益带宽因子(Fc),结电容(CJE, CJS, CJC)等。


NESG2030M04的模型适用范围为0.1至12GHz的频率范围,以及0.5V至3V的VCE和1mA至30mA的IC偏置范围。

这些信息对于确保晶体管在设计电路中能够正常工作至关重要。


NESG2030M04的合规性信息表明,该产品符合欧盟关于限制电子电气设备中使用某些有害物质的指令(RoHS)和关于限制使用某些溴化阻燃剂的指令。

NESG2030M04的无铅版本带有后缀-A,而含有铅但被RoHS指令豁免的版本带有后缀-AZ。

所有这些版本的设备都符合RoHS指令的要求。


NESG2030M04的订购信息、性能曲线和模型参数都是设计和使用这款高频晶体管时的重要参考资料。

通过这些信息,工程师可以确保NESG2030M04能够在射频应用中提供最佳性能。
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