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NESG204619-A

NESG204619-A

  • 厂商:

    CEL

  • 封装:

  • 描述:

    NESG204619-A - NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION - California Eastern Labs

  • 详情介绍
  • 数据手册
  • 价格&库存
NESG204619-A 数据手册
PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • • • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMATION PART NUMBER NESG204619-A NESG204619-T1-A QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 13 5 1.5 40 200 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG204619 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Associated Gain Reverse Transfer Capacitance fT |S21e| NF Ga Cre Note 2 2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 1 V, IC = 2 mA − − 140 − − 180 100 100 220 nA nA − VCE = 1 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 1 V, IE = 0 mA, f = 1 MHz 15 10 − 9.0 − 18 12 0.8 11.0 0.2 − − 1.5 − 0.4 GHz dB dB dB pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter is grounded. hFE CLASSIFICATION RANK Marking hFE Value FB T7 140 to 220 NESG204619 PACKAGE DIMENSIONS 3-PIN SUPER MINIMOLD (19 PACKAGE) (UNIT: mm) 1.6±0.1 0.2+0.1 -0 0.8±0.1 2 0.5 T7 1.6±0.1 1.0 1 0.75±0.05 0.6 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 0 to 0.1 0.15+0.15 -0.0 0.3+0.1 -0 3 0.5 09/09/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
NESG204619-A
1. 物料型号: - 型号为NESG204619,有两个版本:NESG204619-A(50 pcs,非卷带包装)和NESG204619-T1-A(3000 pcs/卷,卷带包装,引脚3朝向带孔的一侧)。

2. 器件简介: - 该器件是NEC公司生产的NPN SiGe晶体管,适用于低噪声、高增益放大应用,具有0.8 dB的典型噪声系数和11.0 dB的典型增益,工作频率可达2 GHz。

3. 引脚分配: - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

4. 参数特性: - 绝对最大额定值:集-基电压VCBO为13V,集-射电压VCEO为5V,发射极-基极电压VEBO为1.5V,集电极电流Ic为40mA,总功率耗散Ptot为200mW,结温Ti为150°C,存储温度Tstg为-65至+150°C。 - 电气特性:在25°C下,集-基截止电流ICBO小于100nA,发射极-基极截止电流IEBO小于100nA,直流电流增益hFE在140至220之间,增益带宽积fr为15至18GHz,插入功率增益IS21el2为10至12dB,噪声系数NF为0.8至1.5dB,相关增益Ga为9.0至11.0dB,反向传输电容Cre为0.2至0.4pF。

5. 功能详解: - 该晶体管采用高击穿电压技术,具有低噪声和高增益的特性,适用于高频应用。

6. 应用信息: - 该产品不适用于生命维持设备、器具或系统中,这些设备的故障可能导致人身伤害。

7. 封装信息: - 采用3-PIN SUPER MINIMOLD(19)封装,具体尺寸图可在文档中查看。
NESG204619-A 价格&库存

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