NESG2101M05-EVPW24-A

A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V Flat-lead 4-pin thin-type super minimold (M05) package ORDERING INFORMATION Part Number NESG2101M05 Order Number Package NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A Remark Flat-lead 4-pin thin-type supper minimold (M05, 2012 PKG) (Pb-Free) Supplying Form 50 pcs (Non reel) • 8 mm wide embossed taping 3 kpcs/reel • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note: Quantity Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg Ratings 13.0 5.0 1.5 100 500 150 −65 to +150 Unit V V V mA mW °C °C Mounted on 38 cm2 × 0.4 mm (t) polyimide PCB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 1 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Symbol MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA − − 130 − − 190 100 100 260 nA nA − 14 11.5 − 17 13.5 0.9 − − 1.2 GHz dB dB − 0.6 − dB 11.0 13.0 − dB − 19.0 − dB Cre Note 2 MSG Note 3 PO (1 dB) VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3.6 V, ICq = 10 mA, f = 2 GHz − 14.5 − 0.4 17.0 21 0.5 − − pF dB dBm GL VCE = 3.6 V, ICq = 10 mA, f = 2 GHz − 15 − dB ICBO IEBO hFE Note 1 fT S21e NF Noise Figure (2) NF Associated Gain (1) Ga Associated Gain (2) Ga Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power Linear Gain 2 Test Conditions Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB/YFB T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) 500 400 300 200 100 100 25 50 75 100 125 0.6 0.4 0.2 2 4 6 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current IC (mA) 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 10 VCE = 2 V Base to Emitter Voltage VBE (V) 10 0.0001 0.4 0.8 Collector to Base Voltage VCB (V) 1 100 f = 1 MHz Ambient Temperature TA (˚C) 10 0.0001 0.4 1.0 0 150 Collector Current IC (mA) Collector Current IC (mA) Mounted on Polyimide PCB (38 × 38 mm, t = 0.4 mm) 600 0 Collector Current IC (mA) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 700 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.0 VCE = 4 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 3 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 Collector Current IC (mA) 90 30 500 μ A 450 μ A 400 μ A 350 μ A 300 μ A 250 μ A 200 μ A 150 μ A 20 100 μ A 80 70 60 50 40 10 0 IB = 50 μ A 1 2 3 4 6 5 Collector to Emitter Voltage VCE (V) 1 000 1 10 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V 100 10 0.1 100 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V 100 10 0.1 1 000 DC Current Gain hFE 100 10 0.1 DC Current Gain hFE VCE = 1 V 1 000 DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 10 100 Collector Current IC (mA) VCE = 4 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 4 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 Gain Bandwidth Product fT (GHz) 15 10 5 0 1 20 Gain Bandwidth Product fT (GHz) 20 VCE = 1 V f = 2 GHz 10 VCE = 2 V f = 2 GHz 15 10 5 10 100 Collector Current IC (mA) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 3 V f = 2 GHz 15 10 5 0 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0 1 100 Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 100 Collector Current IC (mA) VCE = 4 V f = 2 GHz 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 5 of 13 A Business Partner of Renesas Electronics Corporation. 35 30 VCE = 1 V IC = 50 mA MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 40 35 30 1 10 100 30 VCE = 2 V IC = 50 mA MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 3 V IC = 50 mA MSG MAG |S21e|2 5 0 0.1 35 Frequency f (GHz) 20 10 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Frequency f (GHz) 25 15 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) NESG2101M05 40 35 30 VCE = 4 V IC = 50 mA MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 6 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 25 VCE = 1 V f = 1 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 1 GHz MAG MSG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 1 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 25 VCE = 2 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 1 V f = 3 GHz MAG 10 5 |S21e|2 0 –5 –10 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 2 V f = 3 GHz MAG 10 |S21e|2 5 0 –5 –10 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 7 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 25 VCE = 3 V f = 1 GHz MAG MSG 20 |S21e|2 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 4 V f = 1 GHz MAG MSG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 25 VCE = 4 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 3 V f = 3 GHz MAG 10 2 |S21e| 5 0 –5 –10 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 4 V f = 3 GHz MAG 10 |S21e|2 5 0 –5 –10 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 8 of 13 A Business Partner of Renesas Electronics Corporation. 80 Pout 15 60 IC 10 40 ηC 20 5 0 –20 –15 –10 –5 0 5 0 10 Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 20 120 VCE = 3.6 V, f = 3 GHz Icq = 10 mA 100 15 10 80 GP 60 Pout 5 0 –5 –15 40 IC 20 ηC –10 –5 0 5 Input Power Pin (dBm) 10 0 15 25 20 120 VCE = 3.6 V, f = 2 GHz Icq = 10 mA 100 GP 15 80 Pout 10 60 IC 5 40 ηC 20 0 –5 –15 –10 –5 0 5 10 0 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 20 120 VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA 100 15 10 80 Pout 60 GP 5 0 –5 –10 40 IC 20 ηC –5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency η C (%) GP 20 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) 100 Output Power Pout (dBm), Power Gain GP (dB) 25 120 VCE = 3.6 V, f = 1 GHz Icq = 10 mA Output Power Pout (dBm), Power Gain GP (dB) 30 Collector Current IC (mA), Collector Efficiency η C (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) NESG2101M05 Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 9 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 2 10 1 5 NF 1 10 0 100 15 2 10 1 5 0 NF 1 10 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 10 5 NF 1 Noise Figure NF (dB) 15 Ga 4 Associated Gain Ga (dB) VCE = 1 V f = 2 GHz 1 0 100 10 VCE = 2 V f = 2 GHz 3 2 10 1 0 5 NF 1 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 15 Ga 2 1 NF 1 10 10 5 4 0 100 Collector Current IC (mA) Noise Figure NF (dB) VCE = 1 V f = 3 GHz VCE = 2 V f = 3 GHz 20 15 3 Ga 2 1 0 20 15 Ga Collector Current IC (mA) 3 0 3 Collector Current IC (mA) 2 4 20 Collector Current IC (mA) 3 0 Ga 25 NF 1 Associated Gain Ga (dB) 15 VCE = 2 V f = 1 GHz Associated Gain Ga (dB) 4 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 10 5 Associated Gain Ga (dB) 20 Noise Figure NF (dB) 5 3 4 Noise Figure NF (dB) Ga 25 Associated Gain Ga (dB) 4 0 Noise Figure NF (dB) VCE = 1 V f = 1 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 10 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 2 10 1 5 NF 1 10 0 100 15 2 10 1 5 0 NF 1 10 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 15 10 5 NF 1 4 Noise Figure NF (dB) Ga 20 Associated Gain Ga (dB) VCE = 3 V f = 2 GHz 1 0 100 10 VCE = 4 V f = 2 GHz Ga 3 2 10 1 0 5 NF 1 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 15 Ga 2 10 1 NF 1 10 5 0 100 Collector Current IC (mA) 4 Noise Figure NF (dB) VCE = 3 V f = 3 GHz 20 15 Collector Current IC (mA) 3 0 3 Collector Current IC (mA) 2 4 20 Collector Current IC (mA) 3 0 Ga 25 VCE = 4 V f = 3 GHz 20 15 3 Ga 2 10 1 0 NF 1 Associated Gain Ga (dB) 15 VCE = 4 V f = 1 GHz Associated Gain Ga (dB) 4 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 5 Associated Gain Ga (dB) 20 Noise Figure NF (dB) 5 3 4 Noise Figure NF (dB) Ga 25 Associated Gain Ga (dB) 4 0 Noise Figure NF (dB) VCE = 3 V f = 1 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 11 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 12 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm) (Top View) (Bottom View) 2.05±0.1 2 (1.05) 1 4 0.30+0.1 –0.05 T1J (0.65) 0.65 1.30 3 1.25±0.1 2.0±0.1 0.11+0.1 –0.05 0.5 0.59±0.05 PIN CONNENTION 1. Base 2. Emitter 3. Collector 4. Emitter Remark ( ) : Reference value R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 13 of 13 Revision History NESG2101M05 Data Sheet Description Rev. − 3.00 Date Mar 2003 Jun 20, 2012 Page − p.1 p.2 p.12 p.13 Summary Previous No. : PU10190EJ02V0DS Modification of ORDERING INFORMATION Modification of ELECTRICAL CHARACTERISTICS Modification of hFE CLASSIFICATION Modification of S-PARAMETERS Modification of PACKAGE DIMENSIONS All trademarks and registered trademarks are the property of their respective owners. C-1