NESG2101M05

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain3 at VCE = 2 V, IC = 15 mA RF 1. MSG = S21 S12 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. California Eastern Laboratories NESG2101M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS UNITS V V V mA mW °C °C RATINGS 13.0 5.0 1.5 100 500 150 -65 to +150 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature THERMAL RESISTANCE SYMBOLS Rth j-c PARAMETERS Junction to Case Resistance UNITS °C/W RATINGS TBD ORDERING INFORMATION PART NUMBER NESG2101M05-T1-A QUANTITY 3 kpcs/reel SUPPLYING FORM • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape • 8 mm wide embossed taping Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 38 x 38 x 0.4 mm (t) glass epoxy substrate TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance, Cre (pF) 700 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.0 f = 1 MHz Total Power Dissipation, Ptot (mW) 600 500 400 300 200 Mounted on Polymide PCB (38 × 38 mm, t = 0.4 mm) 0.8 0.6 0.4 0.2 100 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 2 V Collector Current, Ic (mA) 1 0.1 Collector Current, Ic (mA) 0.5 0.6 0.7 0.8 0.9 1.0 10 10 1 0.1 0.01 0.001 0.0001 0.4 0.01 0.001 Base to Emitter Voltage, VBE (V) 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 4 V VCE = 3 V Collector Current, Ic (mA) Collector Current, Ic (mA) 10 1 0.1 0.01 0.001 0.0001 0.4 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 90 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V Collector Current, Ic (mA) 80 70 60 50 40 30 20 10 500 µ A 400 µ A 350 µ A 300 µ A 250 µ A 200 µ A 150 µ A 100 µ A DC Current Gain, hFE 450 µ A 100 IB = 50 µ A 0 1 2 3 4 5 6 10 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, lC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 2 V 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V DC Current Gain, hFE DC Current Gain, hFE 100 100 10 0.1 Collector Current, lC (mA) 1 10 100 10 0.1 1 10 100 Collector Current, lC (mA) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product, fT (GHz) VCE = 4 V VCE = 1 V f = 2 GHz DC Current Gain, hFE 15 100 10 5 10 0.1 1 10 100 0 Collector Current, lC (mA) 1 Collector Current, lC (mA) 10 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product, fT (GHz) 15 Gain Bandwidth Product, fT (GHz) VCE = 2 V f = 2 GHz VCE = 3 V f = 2 GHz 15 10 10 5 5 0 1 10 100 0 1 10 100 Collector Current, lC (mA) Collector Current, lC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) VCE = 4 V f = 2 GHz INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 40 VCE = 1 V IC = 50 mA 35 20 MSG 30 25 20 15 15 MAG 10 2 |S21e| 10 5 0 0.1 5 0 1 10 100 1 10 100 Collector Current, lC (mA) Frequency, f (GHz) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 2 V IC = 50 mA INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 40 35 VCE = 3 V IC = 50 mA 40 35 MSG 30 25 20 15 MSG 30 25 20 15 MAG MAG 2 |S21e| 10 5 0 0.1 2 |S21e| 10 5 0 0.1 1 10 100 1 10 100 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 4 V IC = 50 mA 35 MSG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 30 VCE = 1 V f = 1 GHz 40 25 MAG MSG 30 25 20 15 |S21e| 2 MAG 20 15 |S21e| 2 10 10 5 0 0.1 5 0 1 10 100 1 10 100 Frequency, f (GHz) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 2 V f = 1 GHz 25 MSG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 30 30 MAG VCE = 1 V f = 2 GHz 25 20 20 MSG MAG 15 |S21e| 2 15 10 10 |S21e| 2 5 5 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 30 VCE = 2 V f = 2 GHz 20 VCE = 1 V f = 3 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 15 MSG MAG 20 10 MSG 15 MAG 5 |S21e| 2 10 |S21e| 2 0 5 -5 0 1 10 100 -10 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 2 V f = 3 GHz 15 MSG MAG Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 3 V f = 1 GHz MAG 25 MSG 10 2 20 2 5 |S21e| 15 |S21e| 0 10 -5 5 -10 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 4 V f = 1 GHz OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 30 30 MAG VCE = 3 V f = 2 GHz 25 25 MSG 20 2 20 MSG MAG 15 |S21e| 15 10 10 |S21e| 2 5 5 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) VCE = 4 V f = 2 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 20 VCE = 3 V f = 3 GHz 30 25 15 MSG MAG 10 20 MSG MAG 15 5 |S21e| 2 10 |S21e| 2 0 5 -5 0 1 10 100 -10 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 120 VCE = 3.6 V, f = 1 GHz Icq = 10 mA INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Power Gain, MSG (dB) 20 VCE = 4 V f = 3 GHz 15 MSG MAG 25 100 Output Power, Pout (dBm) Power Gain, GP (dB) GP 20 80 10 2 5 |S21e| Pout 15 60 IC 10 ηC 0 40 -5 5 20 -10 1 10 100 0 -20 -15 -10 -5 0 5 0 10 Collector Current, IC (mA) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 120 Input Power, Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.6 V, f = 3 GHz Icq = 10 mA 120 VCE = 3.6 V, f = 2 GHz Icq = 10 mA Output Power, Pout (dBm) Power Gain, GP (dB) GP Output Power, Pout (dBm) Power Gain, GP (dB) 20 100 20 100 15 Pout 80 15 80 GP 10 60 10 IC 60 Pout 5 40 5 40 ηC 0 20 IC 0 20 ηC -5 -15 -10 -5 0 5 10 0 15 -5 -15 -10 -5 0 5 10 0 15 Input Power, Pin (dBm) Input Power, Pin (dBm) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 1 GHz 4 25 120 Output Power, Pout (dBm) Power Gain, GP (dB) 15 80 Noise Figure, NF (dB) Ga 20 3 15 Pout 10 GP 60 2 10 5 IC 40 1 0 ηC 5 20 NF -5 -10 -5 0 5 10 15 0 20 0 1 10 0 100 Input Power, Pin (dBm) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 2 V f = 1 GHz 25 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 1 V f = 2 GHz 20 Noise Figure, NF (dB) 4 Ga 20 Associated Gain, Ga (dB) 3 15 Ga 3 15 2 10 2 10 1 5 1 NF 5 NF 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 2 V f = 2 GHz 20 4 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 VCE = 1 V f = 3 GHz Associated Gain, Ga (dB) Noise Figure, NF (dB) Ga Noise Figure, NF (dB) 3 15 3 15 Ga 2 10 2 10 1 5 1 5 NF NF 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, Ga (dB) Associated Gain, Ga (dB) Noise Figure, NF (dB) Associated Gain, Ga (dB) 20 100 NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 2 V f = 3 GHz 20 5 VCE = 3 V f = 1 GHz NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Associated Gain, Ga (dB) 4 20 3 15 Ga 3 15 2 10 2 10 1 NF 5 1 5 NF 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 4 V f = 1 GHz 25 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 3 V f = 2 GHz 20 Noise Figure, NF (dB) Noise Figure, NF (dB) 4 20 Associated Gain, Ga (dB) 3 Ga 15 3 15 2 10 2 10 1 5 1 5 NF NF 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 4 V f = 2 GHz 20 4 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 VCE = 3 V f = 3 GHz Noise Figure, NF (dB) Noise Figure, NF (dB) Ga 3 15 Associated Gain, Ga (dB) 3 15 Ga 2 10 2 10 1 5 1 5 NF NF 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, Ga (dB) Associated Gain, Ga (dB) Ga Associated Gain, Ga (dB) Ga Noise Figure, NF (dB) Noise Figure, NF (dB) NESG2101M05 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 4 V f = 3 GHz 20 3 Ga 15 2 10 1 NF 5 0 1 10 0 100 Collector Current, IC (mA) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2 T1J 4 1 0.65 1.30 2.0 ±0.1 0.65 +0.1 0.30-0.05 0.59±0.05 0.11 +0.1 -0.05 PIN CONNECTIONS 1. Base 2. Emitter 3. Collector 4. Emitter Associated Gain, Ga (dB) Noise Figure, NF (dB) NESG2101M05 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +90º S21 +135º +45º j10 S12 0 10 25 50 100 S22 +180º .2 .4 .6 .8 1 +0º -j10 S11 -135º -j25 -j100 -j50 -45º NESG2101M05 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.200 0.400 0.600 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.200 3.400 3.600 3.800 4.000 5.000 6.000 7.000 8.000 MAG 0.789 0.728 0.640 0.625 0.623 0.618 0.616 0.615 0.613 0.612 0.613 0.613 0.612 0.612 0.612 0.613 0.613 0.617 0.616 0.616 0.618 0.620 0.618 0.621 0.621 0.623 0.626 0.626 0.630 0.633 0.637 0.657 0.684 0.711 0.735 -90º S11 ANG -60.55 -101.35 -126.85 -144.45 -151.37 -157.17 -162.79 -167.45 -171.88 -176.14 -179.93 176.51 173.28 170.36 167.10 164.14 161.30 158.82 155.93 153.29 150.71 148.00 145.67 143.19 140.77 138.24 133.27 128.35 123.52 118.84 113.84 91.22 69.73 52.77 35.04 MAG 22.546 16.859 12.438 9.872 8.927 8.141 7.468 6.893 6.401 5.971 5.595 5.262 4.969 4.710 4.470 4.260 4.067 3.883 3.723 3.575 3.437 3.311 3.195 3.088 2.983 2.889 2.718 2.568 2.436 2.316 2.209 1.801 1.516 1.296 1.130 S21 ANG 143.21 119.77 105.88 95.71 91.52 87.71 84.22 80.93 77.88 74.92 72.08 69.40 66.77 64.19 61.72 59.24 56.96 54.51 52.25 49.92 47.73 45.48 43.27 41.06 38.89 36.77 32.52 28.32 24.16 20.02 15.92 -4.45 -24.91 -43.46 -61.62 MAG 0.038 0.055 0.061 0.066 0.068 0.070 0.072 0.073 0.075 0.076 0.078 0.080 0.081 0.083 0.085 0.087 0.089 0.091 0.092 0.094 0.096 0.098 0.100 0.103 0.104 0.106 0.111 0.115 0.119 0.124 0.128 0.149 0.168 0.183 0.195 S12 ANG 57.24 40.53 32.65 28.51 27.07 25.95 25.14 24.39 23.86 23.41 22.92 22.49 22.12 21.73 21.34 20.76 20.30 19.87 19.47 18.90 18.25 17.72 17.10 16.52 15.93 15.02 13.69 12.16 10.49 8.76 6.86 -3.74 -16.26 -28.22 -40.47 MAG 0.827 0.640 0.469 0.394 0.370 0.349 0.332 0.320 0.308 0.300 0.292 0.287 0.282 0.279 0.276 0.274 0.272 0.269 0.268 0.268 0.268 0.267 0.268 0.266 0.267 0.267 0.268 0.270 0.270 0.271 0.273 0.280 0.288 0.302 0.313 S22 ANG -44.95 -74.08 -90.20 -104.59 -110.30 -116.15 -121.03 -125.84 -130.30 -134.44 -138.47 -142.03 -145.38 -148.48 -151.73 -154.58 -157.43 -159.83 -162.52 -164.76 -167.14 -169.01 -171.14 -172.97 -174.99 -176.60 -179.91 177.06 174.03 171.13 168.42 153.64 134.59 116.54 97.12 K 0.112 0.191 0.384 0.481 0.522 0.569 0.613 0.651 0.694 0.731 0.766 0.797 0.830 0.856 0.887 0.910 0.933 0.948 0.975 0.995 1.012 1.025 1.042 1.053 1.069 1.079 1.098 1.118 1.129 1.139 1.147 1.166 1.170 1.172 1.186 MAG1 (dB) 27.77 24.83 23.06 21.73 21.16 20.67 20.19 19.74 19.33 18.94 18.56 18.19 17.85 17.52 17.21 16.91 16.61 16.31 16.05 15.79 14.87 14.31 13.77 13.38 12.95 12.63 12.00 11.41 10.93 10.46 10.05 8.36 7.07 6.00 5.02 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NESG2101M05 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +90º S21 +135º j10 +45º S12 0 10 25 50 100 S22 +180º .2 .4 .6 .8 1 +0º S11 -j10 -135º -j25 -j100 -j50 -45º NESG2101M05 VC = 3 V, IC = 50 mA FREQUENCY GHz 0.200 0.400 0.600 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.200 3.400 3.600 3.800 4.000 5.000 6.000 7.000 8.000 MAG 0.572 0.588 0.565 0.571 0.575 0.574 0.578 0.579 0.580 0.582 0.584 0.586 0.585 0.586 0.586 0.588 0.590 0.594 0.593 0.593 0.595 0.598 0.596 0.598 0.599 0.601 0.604 0.604 0.608 0.609 0.613 0.630 0.655 0.681 0.706 -90º S11 ANG -113.11 -146.82 -164.47 -174.66 -178.62 177.67 174.15 171.23 168.24 165.28 162.68 160.14 157.81 155.73 153.15 150.78 148.53 146.68 144.30 142.02 139.86 137.53 135.56 133.38 131.30 128.98 124.58 120.05 115.64 111.42 106.64 85.56 65.39 49.45 32.47 MAG 40.843 24.097 16.568 12.645 11.301 10.218 9.319 8.556 7.916 7.362 6.879 6.455 6.087 5.759 5.462 5.196 4.960 4.730 4.533 4.351 4.182 4.025 3.883 3.750 3.623 3.510 3.300 3.118 2.957 2.812 2.684 2.191 1.847 1.588 1.394 S21 ANG 122.65 102.66 93.61 86.36 83.26 80.41 77.77 75.23 72.83 70.48 68.16 65.95 63.80 61.61 59.51 57.39 55.46 53.32 51.36 49.30 47.40 45.40 43.42 41.47 39.50 37.60 33.78 29.94 26.15 22.38 18.56 -0.52 -20.04 -37.86 -55.46 MAG 0.022 0.029 0.034 0.040 0.043 0.046 0.049 0.052 0.056 0.059 0.062 0.066 0.069 0.072 0.076 0.079 0.082 0.086 0.089 0.092 0.095 0.098 0.102 0.105 0.108 0.111 0.118 0.124 0.130 0.136 0.142 0.169 0.191 0.208 0.219 S12 ANG 47.89 43.32 45.52 47.14 47.40 47.66 47.88 47.76 47.49 47.26 46.69 46.07 45.35 44.60 43.97 42.87 41.96 40.87 39.88 38.91 37.77 36.70 35.46 34.20 33.05 31.78 29.38 26.78 24.08 21.31 18.59 4.19 -11.37 -25.62 -39.67 MAG 0.622 0.465 0.366 0.344 0.338 0.334 0.331 0.329 0.327 0.327 0.327 0.328 0.328 0.328 0.329 0.330 0.330 0.329 0.331 0.331 0.334 0.333 0.335 0.334 0.335 0.335 0.336 0.338 0.337 0.339 0.340 0.345 0.357 0.369 0.379 S22 ANG -81.31 -115.51 -135.31 -148.51 -153.30 -157.83 -161.79 -165.34 -168.83 -171.79 -174.83 -177.28 -179.74 177.91 175.52 173.57 171.41 169.50 167.46 165.70 163.93 162.52 160.76 159.24 157.55 156.19 153.36 150.81 148.07 145.42 142.94 128.61 110.41 92.60 73.61 K 0.326 0.535 0.766 0.864 0.896 0.929 0.952 0.972 0.990 1.005 1.017 1.026 1.035 1.041 1.051 1.056 1.059 1.060 1.067 1.071 1.075 1.076 1.080 1.080 1.083 1.084 1.087 1.090 1.089 1.090 1.090 1.089 1.089 1.094 1.105 MAG1 (dB) 32.65 29.25 26.89 25.01 24.21 23.47 22.77 22.13 21.52 20.55 19.65 18.95 18.31 17.76 17.21 16.75 16.31 15.93 15.49 15.11 14.75 14.44 14.09 13.80 13.48 13.22 12.68 12.17 11.75 11.31 10.93 9.30 8.03 6.97 6.06 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NESG2101M05 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +90º S21 +135º j10 +45º S12 0 10 25 50 100 S22 +180º .2 .4 .6 .8 1 +0º S11 -j10 -135º -j25 -j100 -j50 -45º NESG2101M05 VC = 3.6 V, IC = 10 mA FREQUENCY GHz 0.200 0.400 0.600 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.200 3.400 3.600 3.800 4.000 5.000 6.000 7.000 8.000 MAG 0.789 0.726 0.634 0.619 0.612 0.607 0.606 0.603 0.605 0.603 0.603 0.601 0.603 0.603 0.602 0.603 0.605 0.605 0.605 0.605 0.606 0.608 0.607 0.609 0.610 0.611 0.613 0.616 0.617 0.621 0.624 0.645 0.674 0.703 0.730 -90º S11 ANG -57.89 -98.15 -123.23 -141.61 -148.55 -154.90 -160.48 -165.23 -169.91 -173.86 -177.86 178.57 175.17 172.01 168.75 165.91 162.98 160.18 157.54 154.92 152.29 149.78 147.22 144.76 142.18 139.97 134.84 130.04 125.12 120.40 115.57 92.70 71.09 54.11 36.29 MAG 22.895 17.340 12.889 10.285 9.304 8.480 7.794 7.205 6.687 6.244 5.852 5.509 5.203 4.923 4.677 4.459 4.256 4.067 3.898 3.743 3.600 3.468 3.345 3.233 3.127 3.027 2.849 2.690 2.552 2.427 2.315 1.886 1.587 1.354 1.179 S21 ANG 144.36 121.13 106.94 96.59 92.38 88.48 84.91 81.64 78.44 75.51 72.66 69.92 67.24 64.71 62.23 59.76 57.44 55.01 52.69 50.39 48.17 45.89 43.72 41.51 39.34 37.20 32.93 28.73 24.58 20.47 16.31 -4.08 -24.60 -43.38 -61.88 MAG 0.036 0.053 0.059 0.064 0.066 0.068 0.070 0.071 0.073 0.075 0.076 0.078 0.079 0.081 0.083 0.085 0.086 0.088 0.090 0.092 0.094 0.096 0.098 0.100 0.102 0.104 0.108 0.112 0.116 0.120 0.124 0.144 0.161 0.174 0.185 S12 ANG 58.70 42.11 34.42 30.25 29.03 27.89 27.18 26.60 25.96 25.57 25.20 24.82 24.50 24.11 23.81 23.47 23.03 22.63 22.17 21.67 21.18 20.62 20.15 19.59 19.01 18.16 16.95 15.48 13.94 12.13 10.28 -0.33 -12.96 -25.46 -38.34 MAG 0.837 0.649 0.476 0.397 0.369 0.345 0.328 0.313 0.301 0.291 0.283 0.276 0.270 0.266 0.262 0.259 0.257 0.255 0.253 0.252 0.252 0.251 0.251 0.250 0.250 0.251 0.251 0.252 0.253 0.255 0.256 0.264 0.271 0.286 0.296 S22 ANG -42.54 -70.19 -85.69 -99.12 -104.66 -110.32 -114.99 -119.56 -124.08 -128.11 -132.00 -135.75 -139.12 -142.52 -145.54 -148.55 -151.41 -154.00 -156.55 -158.93 -161.10 -163.46 -165.49 -167.54 -169.39 -171.29 -174.61 -177.81 179.23 176.30 173.50 158.38 139.17 120.42 100.19 K 0.116 0.195 0.388 0.481 0.529 0.576 0.616 0.658 0.692 0.731 0.765 0.800 0.828 0.858 0.887 0.911 0.933 0.956 0.977 0.996 1.014 1.028 1.047 1.060 1.073 1.084 1.104 1.122 1.138 1.146 1.156 1.180 1.186 1.192 1.206 MAG1 (dB) 28.04 25.14 23.37 22.04 21.48 20.96 20.49 20.04 19.63 19.23 18.86 18.51 18.16 17.82 17.51 17.21 16.92 16.63 16.36 16.09 15.11 14.56 14.02 13.61 13.23 12.89 12.26 11.69 11.17 10.73 10.31 8.62 7.33 6.25 5.30 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NESG2101M05 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LBPKG Base LB Q1 LE CCE LCPKG Collector CCEPKG LEPKG CBEPKG Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.64e-15 309.7 1.079 56 233.9 11.67e-15 1.648 20.01 1.080 2.782 54.57e-3 1.024e-18 1.35 1.6 2.2 0.05 1e-4 4.8 1.461e-12 0.798 0.137 489.9e-15 0.605 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.149 1 0 0.75 0 0.8 4e-12 10 5 0.5 20 0 1.11 1.3 5.2 0 1 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBPKG LCPKG LEPKG NESG2101M05 0.01 pF 0.2 pF 0.16 nH 0.17 nH 0.45 pF 0.02 pF 0.05 pF 0.8 nH 1.2 nH 0.15 nH MODEL TEST CONDITIONS Frequency: 0.1 to 6 GHz Bias: VCE = 2 V, IC = 5 mA to 40 mA Date: 09/2003 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 05/11/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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