NESG250134-T1-AZ

NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V • 3-pin power minimold (34 package) ORDERING INFORMATION Part Number Quantity Supplying Form NESG250134-A 25 pcs (Non reel) • 12 mm wide embossed taping NESG250134-T1-A 1 kpcs/reel • Pin 2 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 500 mA 1.5 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10422EJ02V0DS (2nd edition) Date Published July 2004 CP(K) The mark  shows major revised points. NESG250134 THERMAL RESISTANCE (T A = +25C) Parameter Termal Resistance from Junction to Ambient Symbol Ratings Unit Rthj-a 80 C/W Note 2 Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (T A = +25C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE  3.6 4.5 V IC  400 500 mA Pin  12 17 dBm Note Input power under conditions of VCE  4.5 V, f = 460 MHz 2 Data Sheet PU10422EJ02V0DS NESG250134 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA   1 A Emitter Cut-off Current IEBO DC Current Gain hFE VEB = 0.5 V, IC = 0 mA   1 A Note 1 VCE = 3 V, IC = 100 mA 80 120 180  fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz  10  GHz VCE = 3.6 V, IC = 100 mA, f = 460 MHz  19  dB VCE = 3.6 V, IC = 100 mA, f = 460 MHz  23  dB VCE = 3.6 V, IC (set) = 30 mA (RF OFF), 16 19  dB  16  dB 27 29  dBm  29  dBm  60  %  60  % RF Characteristics Gain Bandwidth Product S21e Insertion Power Gain Maximum Satble Gain MSG 2 Note 2 Linner gain (1) GL f = 460 MHz, Pin = 0 dBm Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm c Collector Efficiency (1) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm c Collector Efficiency (2) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2% 2. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking SN hFE Value 80 to 180 Data Sheet PU10422EJ02V0DS 3 NESG250134 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10422EJ02V0DS NESG250134 Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ02V0DS 5 NESG250134 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10422EJ02V0DS NESG250134 Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ02V0DS 7 NESG250134 PA EVALUATION BOARD (f = 460 MHz) Notes 1. 38  90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes PA EVALUATION CIRCUIT (f = 460 MHz) 8 Data Sheet PU10422EJ02V0DS NESG250134 COMPONENT LIST Value Maker C1 30 pF Murata C2 6 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 0.5 pF Murata C7 5 pF Murata C8 10 pF Murata C9, C10 100 nF Murata L1 100 nH Toko L2 3 nH Toko R1 30  SSM PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ02V0DS 9 NESG250134 DISTORTION EVALUATION BOARD (f = 460 MHz) Notes 1. 38  90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DISTORTION EVALUATION CIRCUIT (f = 460 MHz) 10 Data Sheet PU10422EJ02V0DS NESG250134 COMPONENT LIST Value Maker C1 47 pF Murata C2 12 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 6 pF Murata C7 0.5 pF Murata C8 5 pF Murata C9 51 pF Murata C10, C12 100 nF Murata 1 F Murata L1 100 nH Toko L2 15 nH Toko R1 30  SSM C11 DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ02V0DS 11 NESG250134 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm) 12 Data Sheet PU10422EJ02V0DS NESG250134 Data Sheet PU10422EJ02V0DS 13 NESG250134