NESG260234

NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V • 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG260234 Order Number NESG260234-AZ Package 3-pin power minimold (Pb-Free) NESG260234-T1 NESG260234-T1-AZ Note1, 2 Quantity 25 pcs (Non reel) 1 kpcs/reel • Magazine case Supplying Form • 12 mm wide embossed taping • Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 25 9.2 2.8 600 1.9 150 −65 to +150 Unit V V V mA W °C °C Tj Tstg Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10547EJ02V0DS (2nd edition) Date Published May 2005 CP(K) The mark shows major revised points. NESG260234 THERMAL RESISTANCE (TA = +25°C) Parameter Termal Resistance from Junction to Ambient Note Symbol Rthj-a Ratings 65 Unit °C/W Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB 2 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol VCE IC Pin MIN. − − − TYP. 6.0 400 15 MAX. 7.2 500 20 Unit V mA dBm Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz 2 Data Sheet PU10547EJ02V0DS NESG260234 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Linner Gain (1) Linner Gain (2) GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm GL Pout Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm − − − 30.0 50 60 − − − dBm % % 28.5 30.0 − dBm − 19 − dB 19 22 − dB ICBO IEBO hFE Note Symbol Test Conditions MIN. TYP. MAX. Unit VCB = 9.2 V, IE = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 3 V, IC = 100 mA − − 80 − − 120 1 1 180 µA µA − ηC ηC Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSIFICATION Rank Marking hFE Value FB SP 80 to 180 Data Sheet PU10547EJ02V0DS 3 NESG260234 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.6 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2 4 6 8 10 2.0 Total Power Dissipation Ptot (mW) 1.6 Mounted on glass epoxy PWB (34.2 cm2 × 0.8 mm (t) ) 1.2 0.8 Nature Neglect 0.4 0 25 50 75 100 125 150 175 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 VCE = 3 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 100 Collector Current IC (mA) VCE = 5 V 100 Collector Current IC (mA) 10 1 0.1 0.01 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 100 Collector Current IC (mA) Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 VCE = 7 V VCE = 6 V 100 10 1 0.1 0.01 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10547EJ02V0DS NESG260234 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 Collector Current IC (mA) 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 400 300 200 2 mA 100 IB = 1 mA 0 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 5 V 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6 V DC Current Gain hFE DC Current Gain hFE 100 100 10 10 1 10 100 Collector Current IC (mA) 1 000 1 10 100 Collector Current IC (mA) 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 5 V f = 460 MHz 15 VCE = 7 V DC Current Gain hFE 100 10 10 5 1 10 100 Collector Current IC (mA) 1 000 0 10 100 Collector Current IC (mA) 1 000 Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 5 NESG260234 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 7 V f = 460 MHz 15 VCE = 6 V f = 460 MHz 15 10 10 5 5 0 10 100 1 000 0 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 MSG VCE = 5 V IC = 100 mA 40 35 30 25 20 15 10 5 0 0.1 |S21e|2 MAG MSG VCE = 6 V IC = 100 mA 30 25 20 15 10 5 0 0.1 |S21e|2 MAG MAG MSG MAG MSG 1.0 10 1.0 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 MSG VCE = 7 V IC = 100 mA MAG 30 MSG 25 20 MAG 30 25 20 |S21e|2 15 10 5 MAG 15 10 5 0 0.1 |S21e|2 MSG VCE = 5 V f = 460 MHz 1.0 10 0 10 100 1 000 Frequency f (GHz) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10547EJ02V0DS NESG260234 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 MSG MAG 30 MSG 25 20 MAG 25 20 |S21e|2 15 10 5 0 10 |S21e|2 15 10 5 VCE = 6 V f = 460 MHz 100 1 000 0 10 VCE = 7 V f = 460 MHz 100 1 000 Collector Current IC (mA) Collector Current IC (mA) S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 35 VCE = 4.5 V, f = 460 MHz IC (set) = 30 mA Collector Current IC (mA), Collector Efficiency η C (%) 500 35 VCE = 6 V, f = 460 MHz IC (set) = 30 mA 500 30 Pout 400 30 Pout 400 25 GP 300 25 GP 300 20 IC 200 20 IC 200 15 100 15 ηC 0 5 10 15 100 10 –5 ηC 0 5 10 15 0 20 10 –5 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 7 Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER NESG260234 EVALUATION CIRCUIT (f = 460 MHz) VCE VBE R1 C4 L2 L1 L3 RF IN C1 L4 L5 C5 C3 RF OUT C2 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. EVALUATION BOARD (f = 460 MHz) GND VBE VCE GND R1 L2 C4 L1 C5 SP INPUT OUTPUT L4 L3 34-05 C3 C2 C1 L5 Notes 1. 20 × 20 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes 8 Data Sheet PU10547EJ02V0DS NESG260234 COMPONENT LIST Component C1 C2 C3 C4 C5 L1 L2 L3 L4 L5 R1 Maker Murata Murata Murata Murata Murata Toko Toko Toko Toko Toko SSM Value 10 pF 4 pF 33 pF 10 000 pF 1 µF 68 nH 33 nH 1 nH 8.2 nH 8.2 nH 15 Ω Size (TYPE) 1005 1005 1005 1005 1608 1005 LLQ2021 1005 1005 LLQ2021 1608 Purpose Input DC Block/Input RF Matching Input RF Matching Input DC Block/Output RF Matching RF GND RF GND RF Block/Input RF Matching RF Block/Output RF Matching Input RF Matching Input RF Matching Output RF Matching Improve Stability Data Sheet PU10547EJ02V0DS 9 NESG260234 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.5±0.1 1.6±0.2 1.5±0.1 2 0.8 MIN. 1 3 4.0±0.25 2.5±0.1 0.42±0.06 0.47±0.06 1.5 3.0 0.42±0.06 0.41+0.03 –0.06 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 10 Data Sheet PU10547EJ02V0DS 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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