NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG) ORDERING INFORMATION Part Number NESG3031M05 Order Number NESG3031M05-A Package Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG) NESG3031M05-T1 NESG3031M05-T1-A (Pb-Free) Note Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 12.0 4.3 1.5 35 150 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10414EJ03V0DS (3rd edition) Date Published November 2005 CP(K) The mark shows major revised points. NESG3031M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure (1) Noise Figure (2) Noise Figure (3) Associated Gain (1) Associated Gain (2) Associated Gain (3) Reverse Transfer Capacitance Maximum Stable Power Gain ⏐S21e⏐ NF NF NF Ga Ga Ga Cre Note 2 Note 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 6 mA − − 220 − − 300 100 100 380 nA nA − VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 2 V, IC = 6 mA, f = 2.4 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 2.4 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 6.0 − − − − − 7.5 − 11.0 − − 8.5 0.6 0.95 1.1 16.0 10.0 9.5 0.15 14.0 − − − 1.5 − − − 0.25 − − − dB dB dB dB dB dB dB pF dB MSG 3 Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point PO (1 dB) OIP3 13.0 18.0 dBm dBm Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T1K 220 to 380 2 Data Sheet PU10414EJ03V0DS NESG3031M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherw ise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) Mounted on glass epoxy PWB (1.08 cm2 × 1.0 mm (t)) 200 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 0.3 f = 1 MHz 250 0.2 150 100 0.1 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 VCE = 1 V 100 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V Collector Current IC (mA) 1 0.1 0.01 0.001 Collector Current IC (mA) 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 VCE = 3 V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 10 40 µ A IB = 20 µ A Collector Current IC (mA) Collector Current IC (mA) 1 0.1 0.01 0.001 30 20 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10414EJ03V0DS 3 NESG3031M05 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 VCE = 2 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 DC Current Gain hFE 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 VCE = 1 V f = 2 GHz VCE = 3 V 25 20 15 10 5 DC Current Gain hFE 100 10 0.1 1 10 100 0 1 10 Collector Current IC (mA) 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) 25 20 15 10 5 0 1 VCE = 2 V f = 2 GHz 25 20 15 10 5 0 1 VCE = 3 V f = 2 GHz 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10414EJ03V0DS NESG3031M05 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 30 25 20 MAG 15 10 5 0 |S21e|2 MSG MSG MAG VCE = 2 V IC = 20 mA 30 25 MSG 20 15 10 |S21e| 5 0 2 VCE = 1 V IC = 20 mA MAG 1 10 Frequency f (GHz) 100 1 10 Frequency f (GHz) 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 MAG 15 10 5 0 |S21e|2 MSG MSG MAG VCE = 3 V IC = 20 mA 25 20 15 |S21e|2 10 5 0 –5 MSG MAG VCE = 1 V f = 2.4 GHz 1 10 Frequency f (GHz) 100 1 10 Frequency f (GHz) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 MSG 20 15 10 5 0 VCE = 2 V f = 2.4 GHz MAG 30 25 MSG 20 15 10 5 0 VCE = 3 V f = 2.4 GHz MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10414EJ03V0DS 5 NESG3031M05 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 MSG 15 10 |S21e| 5 0 –5 2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 20 MSG 15 10 |S21e|2 5 0 –5 MAG VCE = 2 V f = 5.2 GHz VCE = 1 V f = 5.2 GHz MAG 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 MSG 10 5 0 –5 MAG |S21e| 2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 –5 |S21e|2 MSG MAG VCE = 1 V f = 5.8 GHz VCE = 3 V f = 5.2 GHz 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 25 20 15 MAG 10 |S21e|2 5 0 –5 VCE = 2 V f = 5.8 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 20 15 10 |S21e|2 5 0 –5 VCE = 3 V f = 5.8 GHz MAG 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10414EJ03V0DS NESG3031M05 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 VCE = 3 V, f = 2.4 GHz IC (set) = 20 mA 50 20 VCE = 3 V, f = 5.8 GHz IC (set) = 20 mA OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 Collector Current IC (mA) Pout 10 30 10 Pout 30 5 IC 20 5 IC 20 0 10 0 0 10 –5 –20 –15 –10 –5 0 5 –5 –15 –10 –5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 15 Associated Gain Ga (dB) Ga 3 9 3 12 2 8 2 6 1 0 NF 4 VCE = 2 V f = 2.4 GHz 10 0 100 1 0 NF VCE = 2 V f = 5.8 GHz 1 10 Collector Current IC (mA) 3 1 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10414EJ03V0DS Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 16 4 12 Collector Current IC (mA) Output Power Pout (dBm) Output Power Pout (dBm) 15 40 15 40 7 NESG3031M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm) 2.05±0.1 1.25±0.1 3 T1K 4 1 2.0±0.1 0.65 2 0.65 0.59±0.05 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter Collector Emitter 8 Data Sheet PU10414EJ03V0DS 0.11+0.1 –0.05 0.30+0.1 –0.05 1.30 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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