NESG3033M14

NESG3033M14

  • 厂商:

    CEL

  • 封装:

  • 描述:

    NESG3033M14 - NPN SILICON GERMANIUM RF TRANSISTOR - California Eastern Labs

  • 详情介绍
  • 数据手册
  • 价格&库存
NESG3033M14 数据手册
NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product is improvement of ESD of NESG3032M14. • 4-pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4-pin lead-less minimold (M14, 1208 PKG) NESG3033M14-T3 NESG3033M14-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Base Current Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO Note 1 Ratings 5.0 4.3 12 35 150 150 −65 to +150 Unit V V mA mA mW °C °C VCEO IB Note 1 IC Ptot Note 2 Tj Tstg Notes 1. VCBO and IB are limited by the permissible current of the protection element. 2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10640EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) 2006 NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Input Power Base Feedback Resister Symbol Pin Rb MIN. − − TYP. − − MAX. 0 100 Unit dBm kΩ Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration. Rb Bias Choke 2 Data Sheet PU10640EJ01V0DS NESG3033M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure Associated Gain Reverse Transfer Capacitance Maximum Stable Power Gain ⏐S21e⏐ NF Ga Cre Note 2 Note 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 6 mA − − 220 − − 300 100 100 380 nA nA − VCE = 2 V, IC = 15 mA, f = 2.0 GHz VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 15 mA, f = 2.0 GHz VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt 15.0 − − − 17.5 − − 17.5 0.60 17.5 0.15 20.5 − 0.85 − 0.25 − − − dB dB dB pF dB MSG 3 Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point PO (1 dB) OIP3 12.5 24.0 dBm dBm Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB zL 220 to 380 Data Sheet PU10640EJ01V0DS 3 NESG3033M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) 1.0±0.05 0.8+0.07 –0.05 3 2 4 zL 1 0.5±0.05 PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base NC (Connected with Pin 2) 4 Data Sheet PU10640EJ01V0DS 0.11+0.1 –0.05 0.15±0.05 1.2+0.07 –0.05 0.8 NESG3033M14 • T he information in this document is current a s of September, 2 006. T he information is subject to change without notice. For actual design-in, refer to the latest p ublications of NEC Electronics data s heets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not a ll products and/or types are available in every country. Please check with an NEC Electronics sales r epresentative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior w ritten c onsent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may a ppear in this document. • NEC E lectronics does not assume any liability for infringement of patents, copyrights or other intellectual property r ights of third parties by or arising from the use of NEC Electronics products listed in this document o r any other liability arising f rom the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other i ntellectual property rights of N EC E lectronics or o thers. • Descriptions of circuits, software and other related information in this document are provided for illustrative p urposes in semiconductor product operation and application examples. The incorporation of these c ircuits, software and information in the design of a customer's equipment shall be done under the full r esponsibility of the customer. N EC E lectronics a ssumes no responsibility for any losses incurred by c ustomers or third parties arising from t he use of these circuits, software and information. • While NEC E lectronics endeavors to enhance the quality, reliability and safety of NEC E lectronics products, customers agree and acknowledge that th e p ossibility of defects thereof cannot be eliminated entirely. To m inimize risks of damage to property or injury (including d eath) to persons a rising from defects in NEC E lectronics products, c ustomers must incorporate s ufficient safety m easures in their design, such as r edundancy, fire-containment and anti-failure features. • NEC Electronics p roducts are classified into the following t hree quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC E lectronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC E lectronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC E lectronics product b efore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically d esigned for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC E lectronics products is "Standard" unless otherwise expressly specified in NEC E lectronics data sheets or data books, etc. I f c ustomers wish to use NEC Electronics products in applications n ot intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to d etermine NEC Electronics' willingness to support a given application. (Note) (1) "NEC E lectronics" as used in this statement means NEC E lectronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or m anufactured by or for N EC Electronics ( as defined above). M8E 02. 11-1 Data Sheet PU10640EJ01V0DS 5 NESG3033M14 For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
NESG3033M14
1. 物料型号: - 型号:NESG3033M14 - 封装:4-pin lead-less minimold (M14, 1208 PKG)

2. 器件简介: - 该器件是一款NPN型SiGe RF晶体管,适用于低噪声、高增益放大应用。 - 典型噪声系数NF为0.6 dB(在V_CE=2V,Ic=6 mA,f=2.0 GHz时)。 - 最大稳定功率增益MSG为20.5 dB(在VcE=2V,Ic=15 mA,f=2.0 GHz时)。 - 采用SiGe HBT技术(UHS3),f_max为110 GHz。 - 该产品是对NESG3032M14的ESD性能改进。

3. 引脚分配: - 引脚1:Collector(集电极) - 引脚2:Emitter(发射极) - 引脚3:Base(基极) - 引脚4:NC(未连接,与引脚2连接)

4. 参数特性: - 绝对最大额定值包括集电极-基极电压VCBO为5.0V,集电极-发射极电压VCEO为4.3V,基极电流IB为12mA,集电极电流Ic为35mA,总功率耗散为150mW,结温为150℃,存储温度范围为-65至+150℃。

5. 功能详解: - 推荐工作范围:输入功率为0 dBm,基极反馈电阻为100kΩ。 - 电气特性包括直流特性和射频特性,例如集电极截止电流Icao、发射极截止电流IEBO、直流电流增益hFE、插入功率增益S21e、噪声系数NF、相关增益Ga、反向传输电容Cre、最大稳定功率增益MSG、1dB压缩输出功率Po(1dB)和三阶互调失真输出截取点OIP3。

6. 应用信息: - 该器件适用于需要低噪声和高增益放大的应用场合,如无线通信和射频放大器。

7. 封装信息: - 封装类型为4-pin lead-less minimold (M14, 1208 PKG),具体尺寸和引脚连接图已在文档中提供。
NESG3033M14 价格&库存

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