NX6311EH-AZ

LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel FEATURES • Optical output power • Low threshold current • Differential efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 7.0 mW lth = 8 mA ηd = 0.40 W/A • Wide operating temperature range TC = −30 to +85°C φ 5.6 mm 5.8 mm Document No. PL10631EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) 2006 NX6311EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 (φ 4.2) *2 *2 (φ 3.55) 1.0±0.1 BOTTOM VIEW 1 2 3 4 110˚±2˚ (0.3) *2 (0.3) *1 φ 2.0 3.87±0.3 2.97±0.2 5.80±0.5 Focal Point ∆ x = ±300 µ m MAX. ∆ y = ±300 µ m MAX. *2 PIN CONNECTIONS Reference Plane 2 1 (Case) LD 4 PD 3 15.0±1.0 1.2±0.1 4– φ 0.45 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 Data Sheet PL10631EJ01V0DS NX6311EH ORDERING INFORMATION Part Number NX6311EH-AZ Package 4-pin CAN with ball lens cap 2 PD 3 Pin Connections 1 LD 4 Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. Data Sheet PL10631EJ01V0DS 3 NX6311EH ABSOLUTE MAXIMUM RATINGS Parameter Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol Po IF VR IF VR TC Tstg Tsld RH Ratings 15 120 2.0 10 20 −30 to +85 −40 to +85 350 (3 sec.) 85 Unit mW mA V mA V °C °C °C % RECOMMENDED OPERATING CONDITION Parameter Bias Current Symbol Ibias Conditions TC = 25°C, refer to below MIN. TYP. Ith +20 MAX. Unit mA Pf (mW) Ex = 10 log P1 P1 [dB] P0 P0 0 Ibias Imod IF (mA) 4 Data Sheet PL10631EJ01V0DS NX6311EH ELECTRO-OPTICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherw ise specified) Parameter Operating Voltage Symbol Vop Conditions CW, Po = 7.0 mW, TC = +25°C CW, Po = 7.0 mW Threshold Current Ith CW, TC = +25°C CW Differential Efficiency 2 0.25 0.12 1 290 − 3.0 0.40 8 MIN. TYP. 1.3 MAX. 1.6 2.0 20 40 0.50 0.65 1 330 1.5 nm dB W/A mA Unit V ηd CW, TC = +25°C CW Peak Emission Wavelength Temperature Dependence of Slope Efficiency Spectral Width Rise Time Fall Time Side Mode Suppression Ratio Relative Intensity Noise Monitor Current Monitor Dark Current Monitor PD Terminal Capacitance λp Po = 7.0 mW, RMS (−20 dB) ∆η σ tr tf SMSR RIN Im ID Ct ∆η = 10 log ηd (@ 85°C) ηd (@ 25°C) Po = 7.0 mW, RMS (−20 dB) 20-80% 80-20% CW, Po = 7.0 mW CW, Po = 7.0 mW VR = 1.5 V, Po = 7.0 mW VR = 5 V VR = 5 V, f = 1 MHz 6 200 35 1 90 90 nm ps ps dB −120 2 000 500 20 dB/Hz µA nA pF Data Sheet PL10631EJ01V0DS 5 NX6311EH TYPICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherw ise specified) OPTICAL OUTPUT POWER vs. FORWARD CURRENT 10 OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE 100 Optical Output Power Po (mW) Operating Current Iop (mA), Threshold Current Ith (mA) TC = –30˚C +25˚C +85˚C 50 Iop 5 Ith 10 5 0 10 20 30 40 50 60 1 –40 –20 0 20 40 60 80 100 Forward Current IF (mA) Case Temperature TC (˚C) TEMPERATURE DEPENDENCE OF PEAK EMISSION WAVELENGTH 1 350 Peak Emission Wavelength λP (nm) 1 340 1 330 1 320 1 310 1 300 1 290 1 280 1 270 –40 –20 0 20 40 60 80 100 Case Temperature TC (˚C) Remark The graphs indicate nominal characteristics. 6 Data Sheet PL10631EJ01V0DS NX6311EH TYPICAL CHARACTERISTICS (TC = 25°C, unless otherw ise specified) FORWARD CURRENT vs. FORWARD VOLTAGE 50 10 OPTICAL OUTPUT POWER vs. MONITOR CURRENT Optical Output Power Po (mW) Forward Current IF (mA) 40 30 5 20 10 0 1 Forward Voltage VF (V) 2 0 300 600 900 1 200 1 500 Monitor Current Im (µA) SPECTRUM –10 –20 Relative Intensity –30 –40 –50 –60 –70 1 296.0 1 306.0 Wavelength λ (nm) 1 316.0 Remark The graphs indicate nominal characteristics. Data Sheet PL10631EJ01V0DS 7 NX6311EH REFERENCE Document Name Opto-Electronics Devices Pamphlet *1 Document No. PX10160E *1 Published by the former NEC Compound Semiconductor Devices, Ltd. 8 Data Sheet PL10631EJ01V0DS NX6311EH • T he information in this document is current a s of September, 2 006. T he information is subject to change without notice. For actual design-in, refer to the latest p ublications of NEC Electronics data s heets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not a ll products and/or types are available in every country. Please check with an NEC Electronics sales r epresentative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior w ritten c onsent of NEC Electronics. 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The recommended applications of an NEC E lectronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC E lectronics product b efore using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically d esigned for life support). 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M8E 02. 11-1 Data Sheet PL10631EJ01V0DS 9 NX6311EH SAFETY INFORMATION ON THIS PRODUCT DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture Warning Laser Beam A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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