PHOTOCOUPLER
PS2506-1,PS2506L-1
HIGH ISOLATION VOLTAGE
AC INPUT, DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
−NEPOC Series−
DESCRIPTION
The PS2506-1 and PS2506L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
The PS2506-1 is in a plastic DIP (Dual In-line Package) and the PS2506L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
PIN CONNECTION
• AC input response
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 2 000% TYP.)
• High-speed switching (tr, tf = 100 µs TYP.)
• Ordering number of tape product: PS2506L-1-F3: 2 000 pcs/reel
• Safety standards
• UL approved: No. E72422
(Top View)
4 3 1. Anode,
Cathode
2. Cathode,
Anode
1 2 3. Emitter
4. Collector
APPLICATIONS
• Power supply
• Telephone/FAX
• FA/OA equipment
• Programmable logic controller
Document No. PN10229EJ04V0DS (4th edition)
Date Published September 2009 NS
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
PS2506-1,PS2506L-1
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type
PS2506-1
4.6±0.35
6.5±0.5
4 3
1 2
3.5±0.3
3.2±0.4 4.15±0.4
7.62
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type
PS2506L-1
4.6±0.35
3
1
2
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
0.1 +0.1
–0.05
3.5±0.3
0.25 +0.1
–0.05
6.5±0.5
4
0.15
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
7 mm
Outer Creepage Distance
7 mm
Inner Creepage Distance
3.5 mm
Isolation Thickness
0.3 mm
2
Data Sheet PN10229EJ04V0DS
PS2506-1,PS2506L-1
MARKING EXAMPLE
No. 1 pin
Mark
2506
NJ931
N
J
Assembly Lot
9 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Made in Japan
J
Data Sheet PN10229EJ04V0DS
3
PS2506-1,PS2506L-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard
Application Part
Approval
Number
Specification
PS2506-1
PS2506-1-A
Pb-Free
PS2506L-1
PS2506L-1-A
PS2506L-1-F3
PS2506L-1-F3-A
Magazine case 100 pcs
Standard products
(UL Approved)
Embossed Tape 2 000 pcs/reel
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
IF
±80
mA
∆PD/°C
1.5
mW/°C
PD
150
mW
IFP
±1
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
6
V
IC
200
mA
∆PC/°C
2.0
mW/°C
PC
200
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
Diode
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 µs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10229EJ04V0DS
PS2506-1
*1
PS2506-1,PS2506L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Transistor
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
1.4
V
Forward Voltage
VF
IF = ±10 mA
1.17
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
100
ICEO
VCE = 40 V, IF = 0 mA
CTR
IF = ±1 mA, VCE = 2 V
200
2 000
CTR1/
IF = 1 mA, VCE = 2 V
0.3
1.0
Collector to Emitter Dark
pF
400
nA
Current
Coupled
Current Transfer Ratio
%
(IC/IF)
*1
CTR Ratio
3.0
CTR2
Collector Saturation
VCE(sat)
IF = ±1 mA, IC = 2 mA
1.0
V
Voltage
Ω
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.5
pF
*2
tr
VCC = 10 V, IC = 2 mA, RL = 100 Ω
100
µs
Rise Time
Fall Time
*2
10
11
Isolation Resistance
tf
100
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2
IC1
IF1
VCE
IC2
IF2
*2 Test circuit for switching time
Pulse Input
IF
VCC
PW = 1 ms
Duty Cycle = 1/10
Input
ton
50 Ω
VOUT
RL = 100 Ω
td
toff
ts
90%
Output
10%
tr
Data Sheet PN10229EJ04V0DS
tf
5
PS2506-1,PS2506L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
150
100
1.5 mW/°C
50
0
25
50
75
100
125
2 mW/°C
100
50
50
75
100
125
Ambient Temperature TA (°C)
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
60
Forward Current IF (mA)
TA = +100°C
+60°C
+25°C
10
5
0°C
–25°C
–55°C
1
0.5
0.7
40
20
0
–20
–40
–60
0.1
0.8
0.9
1.0
1.1
1.2
1.4
1.3
–80
1.5
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
Forward Voltage VF (V)
Forward Voltage VF (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
100
Collector Current IC (mA)
VCE = 2 V
5V
10 V
24 V
40 V
1000
10
1
–50
Remark
5 mA
100
10 000
–25
0
25
50
75
100
2 mA
50
1 mA
10
0.5 mA
5
0.2 mA
1
0.5
0.2
0.4
Ambient Temperature TA (°C)
6
25
80
50
Forward Current IF (mA)
150
0
150
100
Collector to Emitter Dark Current ICEO (nA)
200
IF = 0.1 mA
0.6
0.8
1.0
1.2
1.4
Collector Saturation Voltage VCE (sat) (V)
The graphs indicate nominal characteristics.
Data Sheet PN10229EJ04V0DS
1.6
PS2506-1,PS2506L-1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Normalized Current Transfer Ratio CTR
160
5 mA
Collector Current IC (mA)
140
120
100
80
2 mA
60
40
1 mA
20
IF = 0.5 mA
0
2
4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
6
8
1.4
Normalized to 1.0
at TA = 25°C,
IF = 1 mA, VCE = 2 V
1.2
1.0
0.8
0.6
0.4
0.2
–50
10
–25
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
50
75
100
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
8 000
7 000
Sample A
B
C
D
6 000
5 000
4 000
3 000
2 000
1 000
Current Transfer Ratio CTR (%)
3 000
VCE = 2 V
0
0.1
0.5
1
5
10
VCE = 2 V
2 500
2 000
1 500
1 000
500
0
30
Sample A
B
C
D
10
50
SWITCHING TIME vs.
LOAD RESISTANCE
10 000
VCC = 5 V,
500 IC = 2 mA,
CTR = 2 280%
tf
Switching Time t ( µ s)
5 000
100
tr
td
10
5
ts
2
30 50
tf
VCC = 5 V,
IF = 1 mA,
CTR = 2 280%
1 000
500
ts
100
50
tr
10
td
100
500
1k
5k
300 500
1k
5k
10 k
50 k 100 k
Load Resistance RL (Ω)
Load Resistance RL (Ω)
Remark
500
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
50
100
Forward Current IF ( µ A)
Forward Current IF (mA)
Switching Time t ( µ s)
25
Ambient Temperature TA (°C)
Collector to Emitter Voltage VCE (V)
Current Transfer Ratio CTR (%)
0
The graphs indicate nominal characteristics.
Data Sheet PN10229EJ04V0DS
7
PS2506-1,PS2506L-1
LONG TERM CTR DEGRADATION
FREQUENCY RESPONSE
1.2
IF = 1 mA,
VCE = 2 V
–5
–10
–15
RL = 100 Ω
0.5
1
2
5
10 20
TA = 60°C
0.6
0.4
50 100 200
0
10
Frequency f (kHz)
Remark
8
TA = 25°C
0.8
0.2
–20
0.2
IF = 1 mA
1.0
CTR (Relative Value)
Normalized Gain GV
0
102
103
104
Time (Hr)
The graphs indicate nominal characteristics.
Data Sheet PN10229EJ04V0DS
105
106
PS2506-1,PS2506L-1
TAPING SPECIFICATIONS (UNIT : mm)
1.55±0.1
4.5 MAX.
10.3±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
7.5±0.1
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2506L-1-F3
Outline and Dimensions (Reel)
2.0±0.5
R 1.0
φ 21.0±0.8
φ 100±1.0
2.0±0.5
φ 13.0±0.2
φ 330±2.0
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
Data Sheet PN10229EJ04V0DS
15.9 to 19.4
Outer edge of
flange
9
PS2506-1,PS2506L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
10
Data Sheet PN10229EJ04V0DS
PS2506-1,PS2506L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10229EJ04V0DS
11
PS2506-1,PS2506L-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NOTICE
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2.
California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
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8.
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