DATA SHEET
PHOTOCOUPLER
PS2513-1,PS2513L-1
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE
PHOTOCOUPLER SERIES
−NEPOC
Series−
DESCRIPTION
The PS2513-1 and PS2513L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor.
The PS2513-1 is in a plastic DIP (Dual In-line Package) and the PS2513L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
PIN CONNECTION
(Top View)
• High collector to emitter voltage (VCEO = 120 V)
• Guaranteed maximum switching speed
4
3
(toff ≤ 60 μs @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
1. Anode
2. Cathode
3. Emitter
4. Collector
• High-speed switching (ton = 5 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
(toff = 25 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ)
• Ordering number of tape product: PS2513L-1-F3: 2 000 pcs/reel
• Safety standards
1
2
• UL approved: No. E72422
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
• Power supply
• Air conditioner
• FA equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. PN10163EJ04V0DS (4th edition)
Date Published November 2009 NS
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
PS2513-1,PS2513L-1
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2513-1
4.6±0.35
6.5±0.5
4 3
1 2
3.5±0.3
3.2±0.4 4.15±0.4
7.62
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type
PS2513L-1
4.6±0.35
3
1
2
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
0.1 +0.1
–0.05
3.5±0.3
0.25 +0.1
–0.05
6.5±0.5
4
0.15
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
7 mm
Outer Creepage Distance
7 mm
Inner Creepage Distance
3.5 mm
Isolation Thickness
0.2 mm
2
Data Sheet PN10163EJ04V0DS
PS2513-1,PS2513L-1
MARKING EXAMPLE
No. 1 pin
Mark
2513
NJ931
N
J
Assembly Lot
9 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Data Sheet PN10163EJ04V0DS
3
PS2513-1,PS2513L-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard
Application Part
Approval
Number
Specification
PS2513-1
PS2513-1-A
Pb-Free
Magazine case 100 pcs
Standard products
PS2513L-1
PS2513L-1-A
PS2513L-1-F3
PS2513L-1-F3-A
Embossed Tape 2 000 pcs/reel
PS2513-1-V
PS2513-1-V-A
Magazine case 100 pcs
PS2513L-1-V
PS2513L-1-V-A
PS2513L-1-V-F3
PS2513L-1-V-F3-A
(UL Approved)
DIN EN60747-5-2
(VDE0884 Part2)
Embossed Tape 2 000 pcs/reel
approved products
(Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Reverse Voltage
VR
6
V
Forward Current (DC)
IF
60
mA
ΔPD/°C
1.5
mW/°C
PD
150
mW
IFP
1
A
Collector to Emitter Voltage
VCEO
120
V
Emitter to Collector Voltage
VECO
6
V
IC
30
mA
ΔPC/°C
1.5
mW/°C
PC
150
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
*1
Peak Forward Current
Transistor
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 μs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10163EJ04V0DS
*1
PS2513-1
PS2513-1,PS2513L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Transistor
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
Collector to Emitter Dark
ICEO
MIN.
TYP.
MAX.
Unit
1.1
1.3
V
5
μA
30
VCE = 120 V, IF = 0 mA
pF
100
nA
Current
Coupled
Current Transfer Ratio
CTR1
IF = 1 mA, VCE = 5 V
25
75
100
%
(IC/IF)
CTR2
IF = 5 mA, VCE = 5 V
50
125
200
%
Collector Saturation
VCE (sat)
IF = 10 mA, IC = 2 mA
0.3
V
Voltage
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
*1
tr
Rise Time
*1
Fall Time
VCC = 5 V, IC = 2 mA, RL = 100 Ω
tf
*1
ton
*1
toff
Turn-on Time
Turn-off Time
10
Ω
11
0.5
pF
3
μs
4
VCC = 5 V, IF = 5 mA, RL = 1.9 kΩ
5
60
25
60
μs
*1 Test circuit for switching time
Pulse Input
IF
VCC
PW = 100 μs
Duty Cycle = 1/10
50 Ω
VOUT
RL = 100 Ω, 1.9 kΩ
Data Sheet PN10163EJ04V0DS
5
PS2513-1,PS2513L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
175
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
125
100
75
50
25
0
25
50
100
75
125
100
75
50
25
50
75
100
125
Ambient Temperature TA (°C)
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TA = +100°C
+60°C
+25°C
Collector Current IC (mA)
30
10
5
0°C
–25°C
–55°C
1
0.5
25
20
50
mA
20
15
mA
A
10 m
10
IF = 5 mA
5
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
1 000
Collector Current IC (mA)
VCE = 5 V
10 V
24 V
40 V
120 V
100
10
1
– 50
–25
0
25
50
75
100
20 mA
10 mA
5 mA
10
5
2 mA
1
IF = 1 mA
0.5
0.1
0
Ambient Temperature TA (°C)
0.2
0.4
0.6
0.8
Collector Saturation Voltage VCE (sat) (V)
Remark The graphs indicate nominal characteristics.
6
25
35
50
Forward Current IF (mA)
150
0
125
100
Collector to Emitter Dark Current ICEO (nA)
175
Data Sheet PN10163EJ04V0DS
1.0
PS2513-1,PS2513L-1
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.2
250
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
0.2
0
–50
–25
0
25
50
75
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
VCC = 5 V,
n=3
200
Sample A
B
C
150
100
50
0
0.1
100
0.5
Ambient Temperature TA (°C)
50
1 000
IF = 5 mA,
VCC = 5 V,
CTR = 130%
Switching Time t ( μ s)
IC = 2 mA,
VCC = 10 V,
CTR = 130%
Switching Time t ( μ s)
10
SWITCHING TIME vs.
LOAD RESISTANCE
100
tr
10
tf
td
ts
1
0.1
10
50 100
tf
100
ts
10
tr
td
1
1k
5 k 10 k
500 1 k
5k
10 k
50 k
Load Resistance RL (Ω)
Load Resistance RL (Ω)
TURN-ON TIME vs.
AMBIENT TEMPERATURE
TURN-OFF TIME vs.
AMBIENT TEMPERATURE
10
100 k
100
IF = 5 mA,
VCC = 5 V,
RL = 1.9 kΩ,
CTR = 150%
Turn-off Time toff ( μ s)
Turn-on Time ton ( μ s)
5
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
8
1
6
4
2
0
–50
–25
0
25
50
75
100
IF = 5 mA,
VCC = 5 V,
80 RL = 1.9 kΩ,
CTR = 150%
60
40
20
0
–50
Ambient Temperature TA (°C)
–25
0
25
50
75
100
Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
Data Sheet PN10163EJ04V0DS
7
PS2513-1,PS2513L-1
LONG TERM CTR DEGRADATION
1.2
TYP.
CTR (Relative Value)
1.0
0.8
IF = 5 mA
TA = 25°C
0.6
IF = 5 mA
TA = 60°C
0.4
0.2
0
102
103
104
105
Time (Hr)
Remark The graph indicates nominal characteristics.
8
Data Sheet PN10163EJ04V0DS
PS2513-1,PS2513L-1
TAPING SPECIFICATIONS (UNIT: mm)
1.55±0.1
4.5 MAX.
10.3±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
7.5±0.1
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2513L-1-F3
Outline and Dimensions (Reel)
2.0±0.5
R 1.0
φ 21.0±0.8
φ 100±1.0
2.0±0.5
φ 13.0±0.2
φ 330±2.0
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
Data Sheet PN10163EJ04V0DS
15.9 to 19.4
Outer edge of
flange
9
PS2513-1,PS2513L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
10
Data Sheet PN10163EJ04V0DS
PS2513-1,PS2513L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10163EJ04V0DS
11
PS2513-1,PS2513L-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Speck
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
UIORM
890
Vpeak
Upr
1 335
Vpeak
Upr
1 669
Vpeak
UTR
8 000
Vpeak
Upr = 1.5 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.875 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))
2
CTI
Material group (DIN EN 60664-1 VDE0110 Part 1)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
VIO = 500 V dc at TA = 25°C
Ris MIN.
10
12
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
10
11
Ω
Package temperature
Tsi
175
°C
Current (input current IF, Psi = 0)
Isi
400
mA
Power (output or total power dissipation)
Psi
700
mW
Ris MIN.
10
Isolation resistance, minimum value
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Isolation resistance
VIO = 500 V dc at TA = 175°C (Tsi)
12
Data Sheet PN10163EJ04V0DS
9
Ω
PS2513-1,PS2513L-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NOTICE
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2.
California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3.
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rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy
or otherwise misappropriation of Renesas Electronics product.
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for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; office equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime
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for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
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8.
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