Data Sheet
PS2535-1, PS2535L-1
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE
R08DS0199EJ0100
Rev.1.00
Dec 25, 2020
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an
NPN silicon darlington connected phototransistor.
High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing)
for surface mount.
FEATURES
High collector to emitter voltage (VCEO = 350 V)
High isolation voltage (BV = 5 000 Vr.m.s.)
High current transfer ratio (CTR = 1 500 % TYP.)
Ordering number of taping product: PS2535L-1-F3 : 2 000 pcs/reel
Pb-Free product
Safety standards
UL approved: UL1577, Double protection
CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation
BSI approved: BS EN 62368-1, Reinforced insulation
VDE approved: DIN EN 60747-5-5 (Option)
PIN CONNECTION
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
APPLICATIONS
Telephone, Exchange equipment
FAX/MODEM
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 1 of 14
PS2535-1, PS2535L-1
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2535-1
4.6±0.35
6.5±0.5
4 3
7.62
3.5±0.3
3.2±0.4 4.15±0.4
1 2
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type For Surface Mount
PS2535L-1
4.6±0.35
3
1
2
1.25±0.15
+0.1
0.1 –0.05
3.5±0.3
+0.1
0.25 –0.05
6.5±0.5
4
0.9±0.25
9.60±0.4
0.25 M
2.54
0.15
Weight ( 4-pin DIP)：0.26 g (typ.)
PHOTOCOUPLER CONSTRUCTION
Parameter
PS2535-1, PS2535L-1
Air Distance (MIN.)
7 mm
Creepage Distance (MIN.)
7 mm
Isolation Distance (MIN.)
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
0.4 mm
Page 2 of 14
PS2535-1, PS2535L-1
MARKING EXAMPLE
No. 1 pin
Mark
R
Company Initial
2535
NJ031
Type Number
Assembly Lot
N J 0 31
Week Assembled
Year Assembled (Last 1 Digit)
In-house Code
CTR Rank Code
Made in Japan
Pb-Free
J
ORDERING INFORMATION
Order Number *1
Part Number
Solder Plating
Packing Style
Specification
PS2535-1
PS2535-1-A
PS2535L-1
PS2535L-1-A
PS2535L-1-F3
PS2535L-1-F3-A
Pb-Free
Magazine case 100 pcs
Safety Standard
Application Part
Approval
Number *2
Standard products
(UL, CSA, BSI,
approved)
Embossed Tape 2 000
PS2535-1
PS2535L-1
PS2535L-1
pcs/reel
PS2535-1-V
PS2535-1-V-A
PS2535L-1-V
PS2535L-1-V-A
PS2535L-1-V-F3
PS2535L-1-V-F3-A
Magazine case 100 pcs
UL, CSA, BSI,
DIN EN 60747-5-5
approved
Embossed Tape 2 000
PS2535-1
PS2535L-1
PS2535L-1
pcs/reel
Notes: *1. When specifying CTR rank, please add “/CTR rank” after Order Number.
ex. L rank : PS2535-1-A/L
Notes: *2. For the application of the Safety Standard, following part number should be used.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 3 of 14
PS2535-1, PS2535L-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
PD/C
0.7
mW/C
Power Dissipation
PD
70
mW
Peak Forward Current*1
IFP
0.5
A
Collector to Emitter Voltage
VCEO
350
V
Emitter to Collector Voltage
VECO
0.3
V
IC
120
mA
PC/C
2.0
mW/C
PC
200
mW
Isolation Voltage*2
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
C
Storage Temperature
Tstg
–55 to +150
C
Diode
Power Dissipation Derating
Transistor
Collector Current
Power Dissipation Derating
Power Dissipation
Note:
*1. PW = 100 s, Duty Cycle = 1 %
*2. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 4 of 14
PS2535-1, PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
MIN.
TYP.
MAX.
Unit
1.2
1.4
V
5
A
15
pF
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 350 V, IF = 0 mA
Coupled
Current Transfer Ratio
(IC/IF) *1
CTR
IF = 1 mA, VCE = 2 V
Collector Saturation
Voltage
VCE (sat)
IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.6
pF
VCC = 5 V, IC = 10 mA, RL = 100
18
s
Rise Time*2
Fall
Time*2
tr
400
1 500
400
nA
5 500
%
1.0
V
1011
tf
5
Note: *1. CTR rank
N: 400 to 5 500 (%)
L: 1 500 to 5 500 (%)
*2. Test Circuit for Switching Time
Pulse input
VCC
IF
Input
PW = 1 ms,
Duty cycle = 1/10
ton
td
In monitor
toff
ts
VOUT
50 Ω
90 %
R L = 100 Ω
Output
10 %
tr
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
tf
Page 5 of 14
PS2535-1, PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
80
60
0.7 mW/℃
40
20
0
25
75
50
100
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
100
240
220
200
180
160
140
120
100
80
60
40
20
0
Ambient Temperature TA (℃)
100
100
5 mA
3 mA
2 mA
50
Collector Current I C (mA)
Forward Current I F (mA)
75
50
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
T A = +100 ℃
+ 60 ℃
+ 25 ℃
50
25
Ambient Temperature T A (℃)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
2.0 mW/℃
10
5
0℃
–25 ℃
–50 ℃
1
0.5
1 mA
10
5
IF = 0.5 mA
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1
0.4
1.5
1.2
1.4
CE (sat)
1.6
(V)
100
VCEO = 350 V
CEO
(nA)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
1 000
50
Collector Current I C (mA)
Collector to Emitter Dark Current I
0.8
Collector Saturation Voltage V
Forward Voltage V F (V)
100 000
0.6
CTR = 1 068 %
2 290 %
4 360 %
100
10
1
–50
–25
0
25
50
75
100
Ambient Temperature T A (℃)
3 mA
5 mA
2 mA
1 mA
10
5
IF = 0.5 mA
1
0
1
2
3
Collector to Emitter Voltage V
4
CE
5
(V)
Remark The graphs indicate nominal characteristics.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 6 of 14
PS2535-1, PS2535L-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERTURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
4 500
Normalized to 1.0
at TA = 25 ℃,
IF = 1 mA, VCE = 2 V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
25
25
0
50
75
VCE = 2 V
4 000
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
1.4
100
3 500
3 000
2 500
2 000
1 500
1 000
500
0
0.1
0.5
1
5
10
40
Forword Current I F (mA)
Ambient Temperature TA (℃)
SWITCHING TIME vs.
LORD RESISTANCE
Switching Time t (μ s)
1 000
VCC = 10 V,
IC = 10 mA,
CTR = 1 800 %
100
tr
tf
td
10
ts
1
0.1
10
50
100
500
1000
Load Resistance R L (Ω)
Remark The graphs indicate nominal characteristics.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 7 of 14
PS2535-1, PS2535L-1
TAPING SPECIFICATIONS (UNIT: mm)
Taping Direction
PS2561DL-1-F3
PS2535L-1-F3
Direction of feed
1.55±0.1
4.5 MAX.
10.3±0.1
+0.1
–0
7.5±0.1
1.5
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions ( Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Outline and Dimensions (Reel)
R 1.0
100±1.0
2.0±0.5
13.0±0.2
330±2.0
2.0±0.5
21.0±0.8
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 8 of 14
PS2535-1, PS2535L-1
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
B
C
D
A
Part Number
PS2535L
Lead Bending
Lead Bending Type For Surface Mount
A
B
C
D
8.2
2.54
1.7
2.2
Remark All dimensions in this figure must be evaluated before use.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 9 of 14
PS2535-1, PS2535L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260 C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220C
60 seconds or less
• Time to preheat temperature from 120 to 180C 120 30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of
0.2 Wt% is recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260 °C MAX.
220 °C
to 60 s
180 °C
120 °C
120 ± 30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
• Preheating conditions
• Number of times
• Flux
260 C or below (molten solder temperature)
10 seconds or less
120 C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350 C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(b) Please be sure that the temperature of the package would not be heated over 100 C
(4) Cautions
• Flux Cleaning
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
• Do not use fixing agents or coatings containing halogen-based substances.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 10 of 14
PS2535-1, PS2535L-1
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the
absolute maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ
according to product.
When using products other than at the specified forward current, the characteristics curves may differ
from the standard curves due to CTR value variations or the like. Therefore, check the characteristics
under the actual operating conditions and thoroughly take variations or the like into consideration before
use.
USAGE CAUTIONS
1.
2.
3.
4.
Protect against static electricity when handling.
Avoid storage at a high temperature and high humidity.
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
Do not use fixing agents or coatings containing halogen-based substances.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 11 of 14
PS2535-1, PS2535L-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Rating
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 UIORM, Pd 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 UIORM, Pd 5 pC
Highest permissible overvoltage
UIORM
Upr
890
1 424
Vpeak
Vpeak
Upr
1 669
Vpeak
UIOTM
8 000
Vpeak
Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303-11))
2
CTI
Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1))
175
III a
Storage temperature range
Tstg
–55 to +150
C
Operating temperature range
TA
–55 to +100
C
Ris MIN.
Ris MIN.
1012
1011
Tsi
Isi
Psi
175
400
700
C
mA
mW
Ris MIN.
109
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25C
VIO = 500 V dc at TA MAX. at least 100C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Total Power Dissipation Psi (mW)
Input Current Isi (mA)
Dependence of maximum safety ratings with package temperature
1000
900
800
700
600
Psi: Total Power Dissipation
500
400
300
Isi: Input Current
200
100
0
0
25
50
75
100
125
150
175
200
Package temp Tsi (°C)
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 12 of 14
PS2535-1, PS2535L-1
Method a) Destructive Test, Type and Sample Test
UIOTM = 8000 V
V
Upr = 1424 V
UIORM = 890 V
t3
t1
tini
t2
tm
t4
t
ttest
t1,t2 = 1 to 10 sec
t3,t4 = 1 sec
tm(PARTIAL DISCHARGE) = 10 sec
ttest = 12 sec
tini = 60 sec
Method b) Non-destructive Test, 100 % Production Test
Upr = 1669 V
V
UIORM = 890 V
ttest
t3
tm
t
t4
t3,t4 = 0.1 sec
tm(PARTIAL DISCHARGE) = 1.0 sec
ttest = 1.2 sec
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 13 of 14
PS2535-1, PS2535L-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
R08DS0199EJ0100 Rev.1.00
Dec 25, 2020
Page 14 of 14
Notice
1.
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