PS2581L2-E4

PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting. Series− FEATURES • Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. CA101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved ORDERING INFORMATION (Solder Contains Lead) Part Number PS2581L1 PS2581L2 PS2581L2-E3, E4 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP taping Package Safety Standard Approval UL, CSA, BSI, NEMKO, DEMKO, SEMKO, FIMKO, VDE approved Application Part Number PS2581L1 PS2581L2 *1 *1 As applying to Safety Standard, following part number should be used. ORDERING INFORMATION (Pb-Free) Part Number PS2581L1-A PS2581L2-A PS2581L2-E3, E4-A 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP taping Package Safety Standard Approval UL, CSA, BSI, NEMKO, DEMKO, SEMKO, FIMKO, VDE approved Application Part Number PS2581L1 PS2581L2 *1 *1 As applying to Safety Standard, following part number should be used. Document No. PN10239EJ01V0DS (1st edition) (Previous No. P12809EJ2V0DS00) Date Published February 2003 CP(K) The mark shows major revised points. PS2581L1,PS2581L2 PACKAGE DIMENSIONS (in millimeters) PS2581L1 4.6±0.35 1.0±0.2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 6.5+0.5 –0.1 7.62 4.15±0.4 3.2±0.4 3.5±0.3 0.35 2.54 0.50±0.1 0.25 M 0 to 15˚ 1.25±0.15 PS2581L2 4.6±0.35 1.0±0.2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 6.5+0.5 –0.1 10.16 7.62 3.5±0.3 0.25±0.2 1.25±0.15 0.25 M 0.9±0.25 2.54 12.0 MAX. PHOTOCOUPLER CONSTRUCTION Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Distance Unit (MIN.) 8 mm 8 mm 4 mm 0.4 mm 2 Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherw ise specified) Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Symbol IF VR Ratings 80 6 1.5 150 1 80 7 50 1.5 150 5 000 −55 to +100 −55 to +150 Unit mA V mW/°C mW A V V mA mW/°C mW Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet PN10239EJ01V0DS 3 PS2581L1,PS2581L2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 *1 Symbol VF IR Ct ICEO CTR VCE(sat) RI-O CI-O tr tf IF = 10 mA VR = 5 V Conditions MIN. TYP. 1.17 MAX. 1.4 5 Unit V µA pF V = 0 V, f = 1.0 MHz VCE = 80 V, IF = 0 mA IF = 5 mA, VCE = 5 V IF = 10 mA, IC = 2 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 2 mA, RL = 100 Ω 10 11 50 100 80 200 400 0.3 nA % V Ω 0.5 3 5 pF µs *2 *1 CTR rank L : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time Pulse Input PW = 100 µ s Duty Cycle = 1/10 VCC IF 50 Ω VOUT RL = 100 Ω 4 Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherw ise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 150 Diode Power Dissipation PD (mW) 100 100 50 50 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 Forward Current IF (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 70 Collector Current IC (mA) TA = +100 ˚C +60 ˚C +25 ˚C 60 50 40 50 mA 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 30 20 10 20 mA A m 10 IF = 5 mA 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (nA) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 5 mA 2 mA 10 000 Collector Current IC (mA) 1 000 VCE = 80 V 40 V 24 V 10 V 5V 10 5 100 1 0.5 IF = 1 mA 10 1 – 50 –25 0 25 50 75 100 0.1 0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V) Data Sheet PN10239EJ01V0DS 5 PS2581L1,PS2581L2 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio CTR Current Transfer Ratio CTR (%) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 450 400 350 300 250 200 150 100 50 0 0.05 0.1 0.5 1 5 10 50 ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 1.0 ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 0.8 ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 0.6 1.2 0.4 0.2 0 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V –50 –25 0 25 50 75 100 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 50 IC = 2 mA, VCC = 10 V, CTR = 290 % tf tr 1 000 SWITCHING TIME vs. LOAD RESISTANCE IF = 5 mA, VCC = 5 V, CTR = 290 % tf Switching Time t ( µ s) 10 td ts 1 Switching Time t ( µ s) 100 ts 10 tr 0.1 10 50 100 500 1 k 5 k 10 k 1 100 td 500 1 k 5 k 10 k 50 k 100 k Load Resistance RL (Ω) Load Resistance RL (Ω) FREQUENCY RESPONSE CTR Degradation (Relative Value) IF = 5 mA, VCE = 5 V 1.2 LONG TERM CTR DEGRADATION TYP. 1.0 0.8 0.6 0.4 0.2 0 IF = 5 mA TA = 60 ˚C IF = 5 mA TA = 25 ˚C 0 Normalized Gain GV –5 –10 –15 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 100 Ω RL = 1 kΩ 102 103 Time (Hr) 104 105 Frequency f (kHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 4.4±0.2 11.5±0.1 2.05±0.1 12.0±0.1 6.6±0.2 0.38 Tape Direction PS2581L2-E3 PS2581L2-E4 Outline and Dimensions (Reel) 12.35±0.15 24.0±0.3 2.0±0.5 B 330±2.0 2.0±0.5 B13.0±0.2 R 1.0 B 21.0±0.8 B 100±1.0 25.5±1.0 29.5±1.0 Packing: 1 000 pcs/reel 23.9 to 27.4 Outer edge of flange Data Sheet PN10239EJ01V0DS 7 PS2581L1,PS2581L2 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature • Time of peak reflow temperature • Time of temperature higher than 220°C • Time to preheat temperature from 120 to 180°C • Number of reflows • Flux 260°C or below (package surface temperature) 10 seconds or less 60 seconds or less 120±30 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature • Time • Preheating conditions • Number of times • Flux 260°C or below (molten solder temperature) 10 seconds or less 120°C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10239EJ01V0DS 9 PS2581L1,PS2581L2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for all devices test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Ris MIN. 10 9 Symbol Speck Unit IV III 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Upr 1 424 Vpeak UTR 8 000 2 > 8.0 > 8.0 Vpeak mm mm CTI 175 III a Tstg TA −55 to +150 −55 to +100 12 11 °C °C Ω Ω Ris MIN. Ris MIN. 10 10 Tsi Isi Psi 175 400 700 °C mA mW Ω 10 Data Sheet PN10239EJ01V0DS 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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