PS2702-1-F3-M-A

HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP MULTI PHOTOCOUPLER PS2702-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV:3.75 k V r.m.s. MIN PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. This device is mounted in a plastic SOP (Small Outline Package) for high density applications and has a shield effect to cut off ambient light. • SOP (SMALL OUT-LINE PACKAGE) • ISOLATED CHANNELS PER EACH PACKAGE • HIGH CURRENT TRANSFER RATIO CTR: 200% MIN @ IF = 1 mA, VCE = 2 V APPLICATIONS • HIGH SPEED SWITCHING tr, tf, = 200 µs TYP Interface circuit for various instrumentations and control equipment. • TAPE AND REEL AVAILABLE • AC LINE/DIGITAL LOGIC • DIGITAL LOGIC INTERFACE • TWISTED PAIR LINE RECEIVER • TELEPHONE/TELEGRAPH LINE RECEIVER • HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL • RELAY CONTACT MONITOR • POWER SUPPLY MONITOR ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Transistor Diode SYMBOLS PS2702-1 UNITS MIN TYP VF Forward Voltage, IF = 5 mA V IR Reverse Current, VR = 5 V µA Ct Terminal Capacitance, V= 0, f = 1.0 MHz pF ICEO Collector to Emitter Dark Current, VCE = 40 V, IF = 0 nA CTR Current Transfer Ratio1, IF = 1 mA, VCE = 2 V % Collector Saturation Voltage, IF = 1 mA, IC = 2 mA V RI-O Isolation Resistance, Vin-out = 1.0 kV DC Ω CI-O Isolation Capacitance, V = 0, f = 1.0 MHZ pF 0.4 tr Rise Time 2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 200 tf Fall Time 2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 200 VCE (sat) Coupled PARAMETERS Notes: 1. CTR rank K: 2000 to (%) L: 700 to 3400 (%) M: 200 to 1000 (%) 1.1 MAX 1.4 5 30 400 200 2000 1.0 11 10 2. Test Circuit for Switching Time 4 3 VCC PULSE INPUT 1 PW = 1 mS Duty Cycle = 1/10 IF 1 2 50 Ω 2 4 3 VOUT RL = 100 Ω PS2702-1 California Eastern Laboratories PS2702-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS Diode IF PARAMETERS RATINGS PS2702 -1 UNITS Forward Current (DC) mA 50 VR Reverse VoltageV 6 PD Power Dissipation mW/Ch 80 ∆PD/°C Power Dissipation Derating mW/°C 0.8 IF (PEAK) Peak Forward Current (PW = 100 µs, Duty Cycle 1%) A 1 VCEO Collector to Emitter Voltage V 40 VECO Emitter to Collector Voltage V 6 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. Transistor IC Collector Current mA/Ch 200 PC Power Dissipation mW/Ch 150 Power Dissipation Derating mW/°C 1.5 ∆PC/°C Coupled BV Isolation Voltage 2 Vr.m.s. 3750 TSTG Storage Temperature °C -55 to +150 TA Ambient Temperature °C -55 to +100 TYPICAL PERFORMANCE CURVES (TA = 25°C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 100 75 50 25 0 25 50 75 100 150 1.5 mW /˚C 100 50 0 25 50 75 100 Ambient Temperature,TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 300 100 10 100 Collector Current, IC (mA) Forward Current, IF (mA) A 10 m TA=100 ˚C 75 ˚C 50 ˚C 25 ˚C 0 ˚C -25 ˚C -55 ˚C 1 0.1 0.01 0.6 0.8 1 1.2 1.4 Forward Voltage, VF (V) 1.6 5 mA 1 mA 0.5 mA 10 0.2 mA IF = 0.1 mA 1 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 Collector Saturation Voltage, VCE sat (V) PS2702-1 COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR to EMITTER VOLTAGE 50000 180 160 10000 Collector Current, IC, (mA) Collector to Emitter Dark Current, ICEO (nA) TYPICAL PERFORMANCE CURVES (TA = 25°C) VCE = 40 V 24 V 1000 10 V 5V 2V 100 10 140 120 5 mA 100 2 mA 80 60 1m A 1 40 IF = 0.5 mA 20 1 -60 -40 -20 0 20 40 60 80 100 0 2 4 6 8 Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 10 10000 1.2 Current Transfer Ratio, CTR (%) ∆CTR, Normalized Output Current VCE = 2 V 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ßC IF = 1 mA, VCE = 2 V 0.2 0 -55 -25 0 25 50 75 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 100 0.5 1 5 10 Ambient Temperature, TA (°C) Forward Current , IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 1000 VCC = 5 V IC = 2 mA CTR = 2200 % IF = 1mA VCE = 2 V 0 Voltage Gain, Av (dB) Switching Time, t (µs) 500 tr tf 100 50 td ts 10 -10 -15 RL = 100 Ω -20 5 2 -5 50 100 500 1k Load Resistance, RL (Ω ) 5k 0.2 0.5 1 2 5 10 20 Frequency, f (kHz) 50 100 200 PS2702-1 TYPICAL PERFORMANCE CURVES (TA = 25 °C) SWITCHING TIME vs. LOAD RESISTANCE CTR DEGRADATION 1.2 5000 tf IF = 1 mA, VCC = 5 V, CTR = 2200 % 1.0 Switching Time, t (µs) 1000 ∆CTR, Normalized 500 ts 100 50 tr TA = 25 ˚C 0.8 TA = 60 ˚C 0.6 0.4 10 td 5 0.2 0 50 100 500 1k 5k 10k 50k CURRENT TRANSFER RATIO vs. FORWARD CURRENT Current Transfer Ratio, CTR (%) 3000 VCE = 2 V 2500 2000 1500 1000 500 0 50 100 300 Forward Current, IF (µA) OUTLINE DIMENSIONS (Units in mm) PS2702-1 4 3 PIN CONNECTION (TOP VIEW) 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 4.5 MAX 7.0 ±0.3 4.4 2.0 2.3 MAX 0.1±0.1 +0.10 0.15 -0.5 2.54 1.2 MAX +0.10 0.4 -0.05 10 2 103 10 4 Time, Hr Load Resistance, RL (Ω) 10 10 0.5±0.3 1.3 10 5 10 6 PS2702-1 TAPING SPECIFICATIONS (Units in mm) 5.5 ± 0.1 1.55 ± 0.1 1.55 ± 0.1 2.4 ± 0.1 12.0 ± 0.2 2.0 ± 0.1 4.0 ± 0.1 1.75 ± 0.1 OUTLINE AND DIMENSIONS (TAPE) 7.4 ± 0.1 0.3 4.6 ± 0.1 8.0 ± 0.1 TAPING DIRECTION PS2702-1-E3 PS2702-1-F3 PS2702-1-E4 PS2702-1-F4 OUTLINE AND DIMENSIONS (REEL) 1.5±0.5 ° 6.0±1 φ66 0° 2.0±0.5 60 1.5±0.1 13.0±0.5 12 PS2702-1-E3, E4: φ178 PS2702-1-F3, F4: φ330 φ21.0±0.8 1.5±0.1 +2.0 12.4 -0.0 18.4 MAX Packing: PS2702-1-E3, E4 PS2702-1-F3, F4 900 pcs/reel 3500 pcs/reel PS2702-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 ˚C (package surface temperature) • Time of temperature higher than 210 ˚C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235˚ C or below (2) Dip soldering • Temperature 260 ˚C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 12/11/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE