PS2711-1-L-A

DATA SHEET PHOTOCOUPLER PS2711-1 HIGH CTR 4-PIN SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2711-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. The package is an SOP (Small Outline Package) type for high density mounting applications. FEATURES • High current transfer ratio (CTR = 200 % TYP. @ IF = 1mA) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin package (4-pin SOP) • Ordering number of tape product: PS2711-1-F3, F4 • UL approved: File No. E72422 (S) APPLICATIONS • Programmable logic controllers • Small power supply • Hybrid IC • Modem/FAX The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14945EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan © 2000 PS2711-1 PACKAGE DIMENSIONS in millimeters 4±0.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.1±0.1 2.1±0.2 0.15 +0.10 –0.05 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 0.5±0.3 0.25 M MARKING No. 1 pin Mark 2711 N003 Trade Mark Type Number Assembly Lot N 0 03 Week Assembled Year Assembled (Last 1 Digit) CTR Rank Name 2 Data Sheet P14945EJ1V0DS00 PS2711-1 ORDERING INFORMATION Part Number PS2711-1 Package 4-pin SOP Safety Standards Approval Packing Style 50 pcs (Tape 50 pcs cut) PS2711-1-F3 UL approved Application Part *1 Number PS2711-1 Embossed Tape 3 500 pcs/reel PS2711-1-F4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW IFP 0.5 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 5 V IC 40 mA ∆PC/°C 1.5 mW/°C PC 150 mW Isolation Voltage BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P14945EJ1V0DS00 3 PS2711-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 40 V Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 1 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz Rise Time tr *2 Fall Time VCC = 5 V, IC = 2 mA, RL = 100 Ω tf N : 100 to 400 (%) K : 200 to 400 (%) L : 150 to 300 (%) M : 100 to 200 (%) *2 Test circuit for switching time Pulse Input VCC PW = 100 µ s Duty cycle = 1/10 IF In monitor 4 MAX. Unit 1.15 1.4 V 5 µA 30 100 200 VOUT RL = 100 Ω Data Sheet P14945EJ1V0DS00 pF 100 nA 400 % 0.3 V Ω 11 10 0.4 pF 4 µs 5 *1 CTR rank 50 Ω TYP. IF = 1 mA, IC = 0.2 mA Isolation Resistance *2 MIN. PS2711-1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 80 60 40 20 50 25 0 Forward Current IF (mA) 150 100 50 25 75 100 Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 000 TA = +100 ˚C +60 ˚C +25 ˚C 1 0 ˚C –25 ˚C –50 ˚C 0.1 0.01 0.0 0.5 1.0 1.5 2.0 1 000 VCE = 40 V 20 V 10 V 100 10 1 –25 0 50 25 75 100 Forward Voltage VF (V) Ambient Temperature TA (˚C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 25 100 10 mA 5 mA 2 mA IF = 10 mA 20 Collector Current IC (mA) Collector Current IC (mA) 50 Ambient Temperature TA (˚C) 100 10 200 0 100 75 Collector to Emitter Dark Current ICEO (nA) Diode Power Dissipation PD (mW) 100 5 mA 15 10 2 mA 5 1 mA 0.5 mA 0 2 4 6 8 10 10 1 mA 1 0.1 0.0 Collector to Emitter Voltage VCE (V) IF = 0.5mA 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) Data Sheet P14945EJ1V0DS00 5                     PS2711-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.6 500 1.4 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 5 V 0.2 0.0 –50 0 –25 25 50 VCE = 5 V, n=3 400 300 200 100 0 0.01 100 75 0.1 1 100 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 1 000 Switching Time t (µs) IC = 2 mA, VCC = 5 V, CTR = 200 % Switching Time t (µ s) Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 10 tf tr td 1 tf IF = 1 mA, VCC = 5 V, CTR = 200 % 100 ts tr 10 td 1 ts 0.1 10 100 0.1 100 10 k 1k 1k 100 k Load Resistance RL (kΩ) Load Resistance RL (kΩ) FREQUENCY RESPONSE 10 k LONG TERM CTR DEGRADATION 1.2 –5 100 Ω RL = 1 kΩ –10 300 Ω –15 0.8 TA = 25 ˚C 0.6 1 10 100 1 000 0 10 102 103 104 Time (Hr) Frequency f (kHz) Remark The graphs indicate nominal characteristics. 6 TA = 60 ˚C 0.4 0.2 –20 –25 0.1 IF = 1 mA 1.0 CTR (Relative Value) Normalized Gain Gv 0 Data Sheet P14945EJ1V0DS00 105 106 PS2711-1 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 4.6±0.1 8.0±0.1 Tape Direction PS2711-1-F4 PS2711-1-F3 Outline and Dimensions (Reel) φ 330 2.0±0.5 1.5±0.5 60 ˚ φ 13.0±0.5 120 ˚ φ 80±5.0 φ 21.0±0.8 1.5 6.0±1 12.4+2.0 –0.0 Packing: 3 500 pcs/reel Data Sheet P14945EJ1V0DS00 7 PS2711-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 235 °C or below (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet P14945EJ1V0DS00 PS2711-1 [MEMO] Data Sheet P14945EJ1V0DS00 9 PS2711-1 [MEMO] 10 Data Sheet P14945EJ1V0DS00 PS2711-1 [MEMO] Data Sheet P14945EJ1V0DS00 11 PS2711-1 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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