Data Sheet
PS2802-1, PS2802-4
HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SSOP PHOTOCOUPLER
R08DS0156EJ0101
Rev.1.01
Feb 25, 2020
DESCRIPTION
The PS2802-1 and PS2802-4 are optically coupled isolators containing a GaAs light emitting diode and an
NPN silicon darlington-connected photo transistor in a plastic SSOP for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
High isolation voltage (BV = 2 500 Vr.m.s.)
Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
High current transfer ratio (CTR = 2 000% TYP. @ IF = 1 mA, VCE = 2 V)
Ordering number of tape product: PS2802-1-F3, PS280C-4-F3
Pb-Free product
Safety standards
UL approved: UL1577, Single protection
CSA approved: CAN/CSA-C22.2 No. 62368-1, Basic insulation
BSI approved: BS EN 62368-1, Basic/Supplementary insulation
VDE approved: DIN EN 60747-5-5 (Option)
PIN CONNECTION
(Top View)
PS2802-1
4 3
1. Anode
2. Cathode
3. Emitter
4. Collector
1 2
PS2802-4
16 15 14 13 12 11 10 9
APPLICATIONS
1 2 3 4 5 6 7 8
1. 3. 5. 7. Anode
2. 4. 6. 8. Cathode
9. 11. 13. 15.Emitter
10. 12. 14. 16.Collector
Programmable logic controllers
Measuring instruments
Power supply
Hybrid IC
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 1 of 15
PS2802-1, PS2802-4e
PACKAGE DIMENSIONS (UNIT: mm)
PS2802-1
PS2802-4
2.7±0.3
7.0±0.3
4.4
4.4
2.0+0.3
–0.2
0.15+0.10
–0.05
7.0±0.3
0.15+0.10
–0.05
2.0±0.1
0.1±0.1
10.3±0.3
0.1±0.1
0.5±0.3
1.27
0.4±0.1
0.12 M
0.40+0.10
–0.05
0.12
M
1.27
0.5±0.3
Weight ( 4-pin SSOP)：0.05 g (typ.)
Weight (16-pin SSOP)：0.2 g (typ.)
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
4.5 mm
Creepage Distance
4.5 mm
Isolation Distance
0.1 mm
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 2 of 15
PS2802-1, PS2802-4e
MARKING EXAMPLE
PS2802-1
Company initial
Made in Japan
R02
301
"
" :Made in Japan
Last 2 number of type
No. : 02
Assembly Lot
301
Week Assembled
Year Assembled (Last 1 digit)
PS2802-4
Company initial
R
Country Assembled
Type Number
Assembly Lot
PS2802-4
NL301
No. 1 pin
Mark
N L 3 01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
(L: Pb-Free)
Rank Code
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 3 of 15
PS2802-1, PS2802-4e
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Pb-Free
Safety Standard
Packing Style
Approval
PS2802-1
PS2802-1-A
50 pcs (Tape 50 pcs cut)
PS2802-1-F3
PS2802-1-F3-A
Embossed Tape 3 500 pcs/reel
PS2802-1-V
PS2802-1-V-A
50 pcs (Tape 50 pcs cut)
PS2802-1-V-F3
PS2802-1-V-F3-A
Embossed Tape 3 500 pcs/reel
PS2802-4
PS2802-4-A
10 pcs (Tape 10 pcs cut)
PS2802-4-F3
PS2802-4-F3-A
Embossed Tape 2 500 pcs/reel
PS2802-4-V
PS2802-4-V-A
10 pcs (Tape 10 pcs cut)
PS2802-4-V-F3
PS2802-4-V-F3-A
Embossed Tape 2 500 pcs/reel
Standard products
(UL, CSA, BSI
approved)
Application Part
Number*1
PS2802-1
UL, CSA, BSI,
DIN EN 60747-5-5
approved
Standard products
(UL, CSA, BSI,
approved)
PS2802-4
UL, CSA, BSI,
DIN EN 60747-5-5
approved
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified)
Parameter
Symbol
Ratings
PS2802-1
Diode
PS2802-4
Forward Current (DC)
IF
50
mA/ch
Reverse Voltage
VR
6
V
PD/C
0.6
0.8
mW/C
Power Dissipation
PD
60
80
mW/ch
Peak Forward Current *1
IFP
1
A/ch
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
6
V
Power Dissipation Derating
Transistor
Unit
Collector Current
IC
90
100
mA/ch
PC/C
1.2
mW/C
PC
120
mW/ch
Isolation Voltage *2
BV
2 500
Vr.m.s.
Operating Ambient Temperature
TA
55 to +100
C
Storage Temperature
Tstg
55 to +150
C
Power Dissipation Derating
Power Dissipation
Notes:
*1. PW = 100 s, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2802-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2802-4).
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 4 of 15
PS2802-1, PS2802-4e
ELECTRICAL CHARACTERISTICS (TA = 25C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
MIN.
TYP.
MAX.
Unit
1.1
1.4
V
5
A
Ct
V = 0 V, f = 1.0 MHz
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 40 V, IF = 0 mA
Coupled
Current Transfer Ratio
(IC/IF) *1
CTR
IF = 1 mA, VCE = 2 V
Collector Saturation
Voltage
VCE(sat)
IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.4
pF
VCC = 5 V, IC = 2 mA, RL = 100
200
s
Rise Time *2
tr
Fall Time *2
tf
15
pF
400
200
nA
2 000
%
1.0
V
1011
200
Notes: *1. CTR rank (PS2802-1 only)
K : 2 000 to (%)
L : 700 to 3 400 (%)
M : 200 to 1 000 (%)
N : 200 to (%)
*2. Test circuit for switching time
VCC
Pulse Input
Input
ton
td
toff
ts
PW = 1 ms
Duty Cycle = 1/10
90%
Vout
IF
50
Output
RL = 100
10%
tr
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
tf
Page 5 of 15
PS2802-1, PS2802-4e
TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
80
PS2802-4
0.8 mW/°C
60
PS2802-1
40
0.6 mW/°C
20
0
25
100
75
50
100
80
PS2802-1
PS2802-4
60
1.2 mW/°C
40
20
25
0
50
100
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
140
10
5
0 °C
–25 °C
–50 °C
1
0.5
120
5 mA
100
80
2 mA
60
40
1 mA
20
0.7
75
Ambient Temperature TA (°C)
0.1
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
IF = 0.5 mA
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
10 000
IF = 10 mA
100
VCE = 2 V
5V
10 V
24 V
40 V
1 000
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
100
Ambient Temperature TA (°C)
TA = +100 °C
+60 °C
+25 °C
50
Forward Current IF (mA)
Transistor Power Dissipation PC (mW)
120
Collector Current IC (mA)
Diode Power Dissipation PD (mW)
100
100
10
5 mA
1 mA
50
0.5 mA
10
5
0.2 mA
1
0.1 mA
0.5
1
–50
0.2
–25
0
25
50
75
100
Ambient Temperature TA (°C)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Collector Saturation Voltage VCE(sat) (V)
Remark The graphs indicate nominal characteristics.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 6 of 15
PS2802-1, PS2802-4e
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.4
8 000
1.2
7 000
VCE = 2 V
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 °C,
IF = 1 mA, V CE = 2 V
0.2
–50
–25
25
0
50
75
6 000
Sample A
B
C
D
5 000
4 000
3 000
2 000
1 000
0.5
0 0.1
100
SWITCHING TIME vs.
LOAD RESISTANCE
Current Transfer Ratio CTR (%)
100
ts
td
10
0.5
1 000
2 000
Sample A
B
C
D
1 500
1 000
500
0
5.0
1.0
10
100
50
Load Resistance R L (kΩ)
Forward Current I F (μA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
VCC = 5 V,
IF = 1 mA,
CTR = 1 910 %
tf
100
tr
10
td
1.0
10
–5
–10
–15
RL = 100 Ω
–20
100
Load Resistance R L (kΩ)
500
IF = 1 mA,
VCE = 2 V
0
ts
1
0.1
2 500
Normalized Gain Gv
Switching Time t (μs)
Switching Time t ( μs)
VCE = 2 V
tf
tr
10 000
30
3 000
VCC = 5 V,
IC = 2 mA,
CTR = 1 910 %
0.1
10
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
10 000
1
5
Forward Current I F (mA)
Ambient Temperature T A (℃)
1 000
1
0.2
0.5
1
2
5
10 20
50 100 200
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 7 of 15
PS2802-1, PS2802-4e
TAPING SPECIFICATIONS (UNIT: mm)
Tape Direction
PS2802-1-F3
Direction of feed
1.5+0.1
–0
7.5±0.1
4.0±0.1
2.8 MAX.
16.0±0.3
2.0±0.1
7.55±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
1.55±0.1
2.3±0.1
2.85±0.1
4.0±0.1
Outline and Dimensions (Reel)
2.0±0.5
R 1.0
100±1.0
330±2.0
2.0±0.5
13.0±0.2
21.0±0.8
17.5±1.0
21.5±1.0
Packing: 3 500 pcs/reel
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 8 of 15
PS2802-1, PS2802-4e
Tape Direction
PS2802-4-F3
Direction of feed
1.55±0.1
2.8 MAX.
10.7±0.1
7.5±0.1
1.5+0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
2.3±0.1
8.3±0.1
12.0±0.1
Outline and Dimensions (Reel)
2.0±0.5
R 1.0
100±1.0
330±2.0
2.0±0.5
13.0±0.2
21.0±0.8
17.5±1.0
21.5±1.0
Packing: 2 500 pcs/reel
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 9 of 15
PS2802-1, PS2802-4e
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
1.27
0.8
1.45
6.25
Remark All dimensions in this figure must be evaluated before use.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 10 of 15
PS2802-1, PS2802-4e
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220C
60 seconds or less
• Time to preheat temperature from 120 to 180C 12030 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of
0.2 Wt% is recommended.)
Package Surface Temperature T (C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260C MAX.
220C
to 60 s
180C
120C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
• Preheating conditions
• Number of times
• Flux
260C or below (molten solder temperature)
10 seconds or less
120C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(b) Please be sure that the temperature of the package would not be heated over 100C
(4) Cautions
• Flux Cleaning
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
• Do not use fixing agents or coatings containing halogen-based substances.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 11 of 15
PS2802-1, PS2802-4e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the
absolute maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ
according to product.
When using products other than at the specified forward current, the characteristics curves may differ
from the standard curves due to CTR value variations or the like. This tendency may sometimes be
obvious, especially below IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations
or the like into consideration before use.
USAGE CAUTIONS
1.
2.
3.
4.
Protect against static electricity when handling.
Avoid storage at a high temperature and high humidity.
Avoid cleaning with Freon based or halogen-based (chlorinated etc.) solvents.
Do not use fixing agents or coatings containing halogen-based substances.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 12 of 15
PS2802-1, PS2802-4e
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 UIORM, Pd 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 UIORM, Pd 5 pC
Highest permissible overvoltage
Rating
55/100/21
UIORM
Upr
705
1 128
Vpeak
Vpeak
Upr
1 322
Vpeak
UIOTM
6 000
Vpeak
CTI
175
Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1))
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303-11))
Unit
2
Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1))
III a
Storage temperature range
Tstg
55 to +150
C
Operating temperature range
TA
55 to +100
C
Ris MIN.
Ris MIN.
1012
1011
Tsi
Isi
Psi
150
300
500
C
mA
mW
Ris MIN.
109
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25C
VIO = 500 V dc at TA MAX. at least 100C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Dependence of maximum safety ratings with package temperature
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 13 of 15
PS2802-1, PS2802-4e
Method a) Destructive Test, Type and Sample Test
UIOTM =6000V
V
Upr =1128V
UIORM =705V
t3
t1
tini
t2
tm
t4
t
ttest
t1,t2 = 1 to 10 sec
t3,t4 = 1 sec
tm(PARTIAL DISCHARGE)= 10 sec
ttest = 12 sec
tini = 60 sec
Method b) Non-destructive Test, 100% Production Test
Upr =1322V
V
UIORM =705V
ttest
t3
tm
t
t4
t3,t4 = 0.1 sec
tm(PARTIAL DISCHARGE)= 1.0 sec
ttest = 1.2 sec
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 14 of 15
PS2802-1, PS2802-4e
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or i any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
R08DS0156EJ0101 Rev.1.01
Feb 25, 2020
Page 15 of 15
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by
you or third parties arising from the use of these circuits, software, or information.
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Renesas Electronics (China) Co., Ltd.
Room 101-T01, Floor 1, Building 7, Yard No. 7, 8th Street, Shangdi, Haidian District, Beijing 100085, China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai 200333, China
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit No 3A-1 Level 3A Tower 8 UOA Business Park, No 1 Jalan Pengaturcara U1/51A, Seksyen U1, 40150 Shah Alam, Selangor, Malaysia
Tel: +60-3-5022-1288, Fax: +60-3-5022-1290
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India
Tel: +91-80-67208700
Renesas Electronics Korea Co., Ltd.
17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5338
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