PS2911-1-F3

PS2911-1-F3

  • 厂商:

    CEL

  • 封装:

    4-SMD,扁平引线

  • 描述:

    OPTOISOLATOR 2.5KV TRANS 4-SMD

  • 数据手册
  • 价格&库存
PS2911-1-F3 数据手册
NEC's HIGH CTR, 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER PS2911-1 FEATURES DESCRIPTION • SMALL AND THIN PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm NEC's PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat lead package has been provided which realizes a reduction in mounting area of about 30% compared with the PS28XX series. • HIGH CURRENT TRANSFER RATIO: CTR = 200% TYP @ IF = 1 mA, VCE = 5 V • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. • TAPE AND REEL AVAILABLE APPLICATIONS • DC/DC CONVERTER • MODEM/PC CARD ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Coupled Transistor Diode SYMBOLS PS2911-1 UNITS MIN TYP MAX VF Forward Voltage, IF = 5 mA PARAMETERS V 0.9 1.1 1.3 IR Reverse Current, VR = 5 V µA CT Terminal Capacitance, V = 0, f = 1.0 MHz pF ICEO Collector to Emitter Current, IF = 0 mA, VCE = 40 V nA CTR Current Transfer Ratio (IC/IF)1, IF = 1 mA, VCE = 5 V % VCE(sat) Collector Saturation Voltage, IF = 1 mA, IC = 0.2 mA V RI-O Isolation Resistance, VI-O = 1.0 k VDC Ω CI-O 5 15 100 100 200 400 0.13 0.3 1011 Isolation Capacitance, V = 0 V, f = 1.0 MHz pF tR Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 5 tF Fall Time2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 10 ton On Time2, VCC = 5 V, IF = 1 mA, RL = 5 kΩ µs 40 Time2, ts Storage toff Off Time2, VCC = 5 V, IF = 1 mA, RL = 5 kΩ 1. CTR RANK: N: 100 to 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) VCC = 5 V, IF = 1 mA, RL = 5 kΩ 2. Test Circuit for Switching Time VCC PULSE INPUT 0.4 µs 10 µs 120 PS2911-1 3 4 PW = 100 µs Duty Cycle = 1/10 In monitor IF 50 Ω VOUT RL = 100 Ω or 5 kΩ 1 2 California Eastern Laboratories PS2911-1 mA mA/°C A mW V 50 0.5 0.5 60 6 Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation V V mA mW/˚C mW 40 5 40 1.2 120 Vr.m.s. mW 2500 160 °C °C -55 to +100 -55 to +150 Operating Ambient Temp. Storage Temperature Notes: 1. Operation in excess pf any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output. CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. PARAMETER UNITS (MIN) Air Distance 4 mm Creepage Distance 4 mm Isolation Distance 0.4 mm OUTLINE DIMENSIONS (Units in mm) 2.5±0.3 4 3 N 1 4.1 MIN Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage Isolation Voltage3 Total Power Dissipation OPTOCOUPLER CONSTRUCTION RATINGS 2 5.0±0.2 +0.1 UNITS 0.15 -0.05 TSTG PARAMETERS 2.1 MAX SYMBOLS Diode IF ∆IF/˚C IF (Peak) PD VR Transistor VCEO VECO IC ∆PC/˚C PC Coupled BV PT TA 4.6±0.2 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) 0.4±0.1 0.2±0.1 1.27 ORDERING INFORMATION PART NUMBER PS2911-1-F3 TOP VIEW PACKING STYLE 1. Anode 2. Cathode 3. Emitter 4. Collector Embossed Tape 3500 pcs/reel PS2911-1-F4 RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) MARKING 1.27 11 (0.35) 0.8 0.6 –Last number of Type No: 11 –An initial of "NEC" N No. 1 pin mark (nicked corner) 5.7 4.7 4.14 111 1 –Assembly lot 11 Week assembled Year assembled ( ): Reference value 24-R0.1 Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use. PS2911-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE 140 Transistor Power Dissipation, PC (mW) Maximum Forward Current, IF (mA) 80 60 40 0.5 mA/°C 20 25 0 50 75 120 100 80 60 40 20 0 100 25 50 75 100 120 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENTvs. FORWARD VOLTAGE 20 100 CTR = 200 % TA = +100°C +60°C +25°C 10 Collector Current, IC (V) Forward Current, IF (mA) 18 0°C -25°C -50°C 1 0.1 IF = 5 mA 16 14 12 10 8 6 2 mA 4 1 mA 2 0.5 mA 0.01 0.0 0.5 1.0 1.5 0 2.0 2 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 10 10000 1000 VCE = 20 V 40 V 100 10 25 50 8 10 COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 0 6 Collector to Emitter Voltage, VCE (V) Forward Voltage, VF (V) 1 -25 4 75 Ambient Temperature, TA (°C) 100 CTR = 200% 5 mA 2 mA 1 mA 1 IF = 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage, VCE(sat) (V) PS2911-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 500 1.4 VCE = 5 V, n=3 Current Transfer Ratio, CTR (%) Normalized Current Transfer Ratio, CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 0.2 0.0 -50 -25 0 25 50 75 400 Sample A B C 300 200 100 0 0.1 100 1 100 10 Forward Current, IF (mA) Ambient Temperature, TA (°C) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 10000 0 toff 1000 100 Normalized Gain, GV Switching Time, t (µs) IF = 1 mA, VCC = 5 V, CTR = 200 % ts ton 10 -5 100 Ω RL = 1 kΩ -10 300 Ω -15 -20 1 1k 10k 1000k 100k LONG TERM CTR DEGRADATION 1.2 IF = 1 mA TA = 25°C CTR (relative Value) 0.8 60°C 0.6 0.4 0.2 0.0 10 10 2 10 3 10 4 Time (Hr) 1 10 100 Frequency, f (kHz) Load Resistance, RL (Ω) 1.0 -25 0.1 10 5 10 6 1000 PS2911-1 TAPING SPECIFICATIONS (Units in mm) +0.1 5.3 ± 0.1 1.55 -0 1.55 ± 0.05 2.9 MAX 12.0 ± 0.2 2.0 ± 0.5 4.0 ± 0.1 1.75 ± 0.1 Tape Outline and Dimensions 5.3 ± 0.1 2.4±0.1 2.9 ± 0.1 4.0 ± 0.1 Tape Direction N N N N N N N PS2911-1-F4 N PS2911-1-F3 Reel Outline and Dimensions 2.0±0.5 2.0 ± 0.5 R1.0 φ100 ± 1.0 φ330±2.0 φ13.0 ± 0.2 φ21.0 ± 0.8 13.5±1.0 Packing: 3500 pcs/reel 11.9 to 15.4 Outer edge of flange PS2911-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 260 ˚C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220 ˚C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260 ˚C (peak temperature) 220 ˚C to 60 s 180 ˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260 ˚C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 10/14/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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