PS2913-1-K-A

NEC's SINGLE TR. OUTPUT, HIGH COLLECTOR-EMITTER VOLTAGE, 4-PIN ULTRA SMALL FLAT LEAD OPTOCOUPLER PS2913-1 FEATURES DESCRIPTION • ULTRA SMALL FLAT LEAD PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm NEC's PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor is one package for high density mounting applications. This device is housed in an ultra small flat-lead package which realizes a reduction in mounting area of about 30% compared with the PS28XX series. • ISOLATION DISTANCE: 0.4 mm MIN • HIGH COLLECTOR TO EMITTER VOLTAGE: VCEO = 120 V • HIGH ISOLATION VOLTAGE BV = 2500 Vr.m.s. APPLICATIONS • AVAILABLE IN TAPE AND REEL: PS2913-1-F3, F4: 3500 pcs/reel • HYBRID IC • POWER SUPPLY ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Coupled Transistor Diode SYMBOLS PARAMETERS PS2913-1 UNITS MIN TYP MAX 0.9 1.1 1.3 VF Forward Voltage, IF = 1 mA V IR Reverse Current, VR = 5 V µA CT Terminal Capacitance, V = 0, f = 1.0 MHz pF ICEO Collector to Emitter Dark Current, IF = 1 mA, VCE = 120 V nA CTR Current Transfer Ratio (IC/IF), IF = 1 mA, VCE = 5 V % VCE(sat) Collector Saturation Voltage, IF = 1 mA, IC = 0.2 mA V RI-O Isolation Resistance, VI-O = 1.0 kVDC Ω CI-O Isolation Capacitance, V = 0 V, f = 1.0 MHz pF 0.4 µs 10 µs 10 µs 80 Time1 tr Rise tf Fall Time1 tON On Time1 VCC = 5 V, IC = 2 mA, RL = 100 Ω VCC = 5 V, IF = 1 mA, RL = 5 kΩ Time1 tS Storage tF Off Time1 5 15 100 50 100 200 0.13 0.3 1011 µs 5 µs 50 Note: 1. Test Circuit for Switching Time VCC PULSE INPUT PW = 100 µs Duty Cycle = 1/10 IF VOUT In monitor 50 Ω RL = 100 Ω or 5 kΩ California Eastern Laboratories PS2913-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) UNITS RATINGS PARAMETER Air Distance 4 mm Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage mA mA/°C A mW V 50 0.5 0.5 60 6 Creepage Distance 4 mm Isolation Distance 0.4 mm Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation V V mA mW/˚C mW 120 6 30 1.2 120 Vr.m.s. mW °C °C 2500 160 -55 to +100 -55 to +150 .SYMBOLS UNITS (MIN) CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. OUTLINE DIMENSIONS (Units in mm) 2.5±0.3 Isolation Voltage3 Total Power Dissipation Operating Ambient Temp. Storage Temperature 4 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. 3 N 1 4.1 MIN VECO IC ∆PC/˚C PC Coupled VISO PT TA TSTG PARAMETERS 4.6±0.2 Diode IF ∆IF/°C IF (Peak) PD VR Transistor VCEO OPTOCOUPLER CONSTRUCTION 2 PART NUMBER PACKING STYLE PS2913-1-F3 Embossed Tape 3500 pcs/reel PS2913-1-F4 +0.1 ORDERING INFORMATION 0.15 -0.05 2.1 MAX 5.0±0.2 0.4±0.1 0.2±0.1 1.27 RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) TOP VIEW 4 3 1 2 (0.35) 1.27 0.8 0.6 1. Anode 2. Cathode 3. Emitter 4. Collector –Last number of Type No: 13 5.7 13 4.7 4.14 MARKING N –An initial of "NEC" 111 ( ): Reference value 24-R0.1 Remark: This drawing is considered to meet air and outer creepage distance 4.0 minimum. All dimensions in this figure must be evaluated before use. No. 1 pin mark (nicked corner) 1 –Assembly lot 11 Week assembled Year assembled PS2913-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 140 Transistor Power Dissipation, PC (mW) Maximum Forward Current, IF (mA) 80 60 40 0.5 mA/°C 20 25 0 50 75 120 100 80 60 40 20 0 100 25 50 75 100 120 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENTvs. FORWARD VOLTAGE 12 100 CTR = 200 % TA = +100°C +60°C +25°C 10 Collector Current, IC (V) Forward Current, IF (mA) IF = 5 mA 10 0°C -25°C -50°C 1 0.1 8 6 4 2 mA 2 1 mA 0.5 mA 0.01 0.0 0.5 1.0 1.5 0 2.0 2 6 8 10 Collector to Emitter Voltage, VCE (V) Forward Voltage, VF (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 50000 10 CTR = 100% 5 mA 10000 5000 1000 500 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 4 VCE = 40 V 24 V 100 50 10 V 10 5 2 mA 1 mA 1 IF = 0.5 mA 1 0.5 0.1 -60 -40 -20 0 20 40 60 80 Ambient Temperature, TA (°C) 100 0.1 0.0 0.2 0.4 0.6 0.8 CollectorSaturation Voltage, VCE(sat) (V) 1.0 PS2913-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 300 1.4 Current Transfer Ratio, CTR (%) Normalized Current Transfer Ratio, CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 5 V 0.2 0.0 -50 -25 0 25 50 75 VCE = 5 V, n=3 250 Sample A 200 B 150 C 100 50 0 0.1 100 1 Ambient Temperature, TA (°C) SWITCHING TIME vs. LOAD RESISTANCE 100 FREQUENCY RESPONSE 10000 1.2 IF = 1 mA, VCC = 5 V, CTR = 200 % 1.0 toff 1000 100 Normalized Gain, GV Switching Time, t (µs) 10 Forward Current, IF (mA) ts ton 10 RL = 1 kΩ 510 Ω 300 Ω 100 Ω 0.8 0.6 0.4 0.2 1 1k 10k 100k 1000k LONG TERM CTR DEGRADATION 1.2 CTR (relative Value) 1.0 IF = 1 mA, TA = 25°C IF = 5 mA, TA = 25°C 0.6 IF = 20 mA, TA = 25°C IF = 20 mA, TA = 60°C 0.4 0.2 0.0 10 10 2 10 3 10 4 10 5 Time (Hr) REMARK: The graphs indicate nominal characteristics. 1 5 10 50 Frequency, f (kHz) Load Resistance, RL (Ω) 0.8 0.0 0.5 10 6 100 500 PS2913-1 TAPING SPECIFICATIONS (Units in mm) +0.1 5.3 ± 0.1 1.55 -0 1.55 ± 0.05 2.9 MAX 12.0 ± 0.2 2.0 ± 0.5 4.0 ± 0.1 1.75 ± 0.1 TAPE OUTLINE AND DIMENSIONS 5.3 ± 0.1 2.4±0.1 2.9 ± 0.1 4.0 ± 0.1 TAPE DIRECTION N N N N N N N PS2913-1-F3 N PS2913-1-F3 REEL OUTLINE AND DIMENSIONS 2.0±0.5 2.0 ± 0.5 R1.0 φ100 ± 1.0 φ330±2.0 φ13.0 ± 0.2 φ21.0 ± 0.8 13.5±1.0 11.9 to 15.4 Outer edge of flange Packing: 3500 pcs/reel PS2913-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 260 ˚C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220 ˚C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260 ˚C (peak temperature) 220 ˚C to 60 s 180 ˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260 ˚C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 10/14/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd.