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UPA808T

UPA808T

  • 厂商:

    CEL

  • 封装:

  • 描述:

    UPA808T - NPN SILICON HIGH FREQUENCY TRANSISTOR - California Eastern Labs

  • 详情介绍
  • 数据手册
  • 价格&库存
UPA808T 数据手册
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz LOW CURRENT OPERATION 0.65 2.0 ± 0.2 1.3 2 1 UPA808T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 DESCRIPTION NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 6 0.2 (All Leads) 5 3 4 0.9 ± 0.1 0.7 0.15 - 0.05 +0.10 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 2 V, IC = 20 mA Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz GHz pF dB dB 7 UNITS µA µA 70 9 100 11 0.4 8.5 1.3 2 0.8 MIN UPA808T S06 TYP MAX 0.1 0.1 140 hFE1/hFE2 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 0.85 hFE2 = Larger Value of Q1 or Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808T-T1, 3K per reel. California Eastern Laboratories UPA808T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 5 3 2 30 90 180 150 -65 to +150 TJ TSTG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 VCE = 2 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Total Power Dissipation, PT (mW) 2 Elements in Total 180 mW Collector Current, lc (mA) 200 40 30 100 Per Element 20 90 mW 10 0 50 100 150 0 0.5 1.0 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 DC CURRENT GAIN vs. COLLECTOR CURRENT 500 Collector Current, lc (mA) 20 180 µA 15 160 µA 140 µA 120 µA 10 100 µA 80 µA 5 60 µA 40 µA lB = 20 µA DC Current Gain,hFE 200 µA 200 VCE = 2 V 100 VCE = 1 V 50 20 10 0 1.0 2.0 3.0 1 2 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, lc (mA) UPA808T TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT f = 2 GHz VCE = 2 V 15 15 f = 2 GHz VCE = 2 V 10 VCE = 1 V Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) VCE = 1 V 5 5 0 1 2 3 5 7 10 1 2 3 5 7 10 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT 3 f = 2 GHz 0.8 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, CRE (pF) f = 1 MHz 0.6 Noise Figure, NF (dB) 2 VCE = 2 V 0.4 VCE = 1 V 1 0.2 1 2 3 5 7 10 0 2.0 4.0 6.0 8.0 10.0 Collector Current, lc (mA) Collector to Base Voltage, VCB (V) ORDERING INFORMATION PART NUMBER UPA808T-T1-A QUANTITY 3000 PACKAGING Tape & Reel UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 1 V, IC = 1 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.964 0.951 0.906 0.837 0.762 0.692 0.629 0.574 0.529 0.489 0.456 0.429 0.402 0.383 0.363 0.344 S11 ANG -7.10 -15.70 -31.00 -45.10 -57.80 -68.70 -78.50 -87.50 -95.40 -103.20 -110.30 -117.70 -124.80 -131.80 -139.90 -147.70 MAG 3.204 3.104 2.978 2.814 2.606 2.378 2.190 2.018 1.860 1.743 1.629 1.534 1.468 1.402 1.347 1.306 S21 ANG 169.70 164.00 149.60 136.50 125.10 115.50 106.90 99.40 93.00 87.30 81.90 77.00 72.50 68.30 64.10 60.40 MAG 0.026 0.052 0.099 0.134 0.160 0.178 0.190 0.199 0.205 0.210 0.214 0.216 0.218 0.220 0.225 0.227 S12 ANG 83.50 78.20 66.80 57.70 50.40 44.60 40.40 37.10 34.70 33.10 32.00 31.10 31.10 31.50 31.10 31.70 MAG 0.993 0.979 0.932 0.869 0.806 0.750 0.702 0.663 0.632 0.608 0.587 0.572 0.556 0.542 0.532 0.521 S22 ANG -5.60 -11.80 -22.40 -31.40 -38.70 -44.50 -49.10 -52.80 -56.00 -58.70 -61.10 -63.20 -65.30 -67.40 -68.40 -70.30 K 0.116 0.098 0.190 0.277 0.363 0.451 0.539 0.624 0.705 0.775 0.848 0.914 0.975 1.030 1.072 1.116 MAG1 (dB) 20.907 17.759 14.783 13.222 12.119 11.258 10.617 10.061 9.578 9.191 8.815 8.514 8.283 6.973 6.134 5.526 UPA808T(Q2) VCE = 1 V, IC = 1 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.963 0.954 0.907 0.842 0.765 0.695 0.634 0.581 0.540 0.506 0.486 0.474 0.463 0.461 0.456 0.453 ANG -7.00 -16.20 -32.50 -47.90 -62.60 -75.80 -87.90 -99.50 -110.20 -120.70 -130.10 -139.30 -147.30 -154.50 -161.30 -167.60 MAG 3.233 3.200 3.084 2.930 2.736 2.514 2.324 2.142 1.975 1.840 1.707 1.598 1.516 1.434 1.370 1.318 S21 ANG 169.80 164.10 149.60 136.20 124.00 113.40 103.70 95.20 87.50 80.70 74.40 68.60 63.20 58.30 53.40 48.90 MAG 0.027 0.050 0.096 0.132 0.160 0.179 0.193 0.201 0.207 0.212 0.214 0.215 0.215 0.219 0.218 0.219 S12 ANG 83.30 79.10 67.20 57.20 48.70 41.60 36.10 31.50 27.70 24.70 22.30 20.30 19.20 18.60 17.40 17.30 MAG 0.991 0.981 0.937 0.875 0.807 0.743 0.685 0.636 0.595 0.561 0.533 0.511 0.491 0.468 0.459 0.445 S22 ANG -5.40 -10.90 -21.10 -30.10 -37.90 -44.10 -49.40 -53.80 -57.80 -61.40 -64.40 -67.30 -70.30 -72.40 -74.90 -77.30 K 0.126 0.086 0.179 0.264 0.350 0.438 0.524 0.609 0.691 0.763 0.837 0.901 0.964 1.016 1.070 1.116 MAG1 (dB) 20.782 18.062 15.068 13.463 12.330 11.475 10.807 10.276 9.796 9.385 9.018 8.711 8.483 7.381 6.367 5.723 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 2 V, IC = 3 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.906 0.861 0.751 0.624 0.521 0.438 0.376 0.325 0.285 0.251 0.223 0.202 0.181 0.164 0.150 0.138 S11 ANG -10.80 -23.80 -45.10 -62.80 -76.70 -88.00 -97.20 -105.80 -113.30 -120.50 -127.50 -134.70 -141.70 -147.70 -156.90 -165.00 MAG 8.655 8.210 7.280 6.278 5.345 4.587 4.003 3.541 3.173 2.884 2.640 2.436 2.280 2.135 2.016 1.919 S21 ANG 167.00 157.00 138.70 124.00 112.90 104.30 97.40 91.30 86.20 81.70 77.50 73.60 70.00 66.60 63.20 60.20 MAG 0.023 0.041 0.073 0.093 0.107 0.118 0.128 0.137 0.146 0.156 0.166 0.176 0.187 0.198 0.210 0.221 S12 ANG 79.00 74.40 63.10 56.00 52.10 50.10 49.70 49.50 49.70 50.20 50.80 51.00 51.50 52.00 51.50 51.50 MAG 0.973 0.933 0.818 0.704 0.616 0.553 0.507 0.476 0.454 0.439 0.430 0.422 0.417 0.412 0.408 0.405 S22 ANG -9.20 -18.10 -32.10 -41.40 -47.40 -51.30 -53.80 -55.50 -56.90 -58.10 -59.20 -60.10 -61.10 -62.40 -63.00 -64.30 K 0.185 0.172 0.305 0.448 0.576 0.692 0.789 0.873 0.943 0.994 1.035 1.069 1.089 1.109 1.119 1.126 MAG1 (dB) 25.755 23.016 19.988 18.293 16.986 15.896 14.952 14.124 13.371 12.669 10.869 9.807 9.043 8.315 7.727 7.229 UPA808T(Q2) VCE = 2 V, IC = 3 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.900 0.870 0.770 0.650 0.544 0.463 0.403 0.357 0.325 0.304 0.291 0.285 0.280 0.283 0.279 0.280 ANG -10.70 -23.40 -45.30 -64.40 -80.70 -94.70 -107.20 -119.00 -130.00 -140.10 -149.30 -157.40 -164.30 -169.90 -175.10 -178.70 MAG 8.679 8.281 7.468 6.557 5.655 4.888 4.276 3.784 3.387 3.073 2.804 2.581 2.408 2.242 2.112 2.002 S21 ANG 167.40 157.90 139.70 124.40 112.30 102.60 94.60 87.60 81.60 76.10 71.10 66.30 61.90 57.80 53.70 49.80 MAG 0.019 0.038 0.068 0.089 0.103 0.114 0.123 0.131 0.139 0.148 0.157 0.165 0.174 0.186 0.194 0.204 S12 ANG 83.20 76.10 63.00 54.80 49.30 46.40 44.50 43.30 42.70 42.20 41.70 41.30 41.10 40.80 39.80 39.40 MAG 0.973 0.941 0.834 0.719 0.622 0.549 0.492 0.449 0.416 0.391 0.371 0.356 0.343 0.325 0.320 0.313 S22 ANG -8.50 -16.60 -30.00 -39.50 -46.00 -50.50 -53.70 -56.10 -58.30 -60.00 -61.60 -63.10 -64.70 -65.80 -66.80 -67.70 K 0.116 0.144 0.287 0.425 0.556 0.667 0.767 0.856 0.929 0.984 1.030 1.069 1.095 1.112 1.134 1.142 MAG1 (dB) 26.597 23.383 20.407 18.673 17.396 16.322 15.411 14.607 13.868 13.173 10.341 9.807 9.532 8.774 8.147 7.629 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 2 V, IC = 5 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.838 0.773 0.617 0.480 0.383 0.314 0.264 0.223 0.191 0.166 0.144 0.129 0.114 0.101 0.094 0.088 S11 ANG -15.70 -31.30 -57.00 -76.00 -90.10 -101.70 -111.20 -120.00 -128.40 -136.40 -144.50 -152.60 -160.70 -168.00 -178.60 171.70 MAG 13.071 12.042 9.858 7.906 6.425 5.360 4.590 4.010 3.565 3.214 2.927 2.689 2.504 2.337 2.194 2.078 S21 ANG 163.70 150.90 129.90 115.30 105.20 97.70 91.80 86.50 82.00 78.00 74.30 70.80 67.50 64.40 61.40 58.60 MAG 0.022 0.038 0.064 0.080 0.093 0.105 0.116 0.128 0.141 0.154 0.166 0.179 0.193 0.206 0.220 0.233 S12 ANG 72.70 71.70 60.90 56.50 55.30 55.30 56.00 56.50 56.80 57.00 57.10 56.90 56.80 56.90 55.80 55.30 MAG 0.951 0.881 0.715 0.585 0.500 0.445 0.408 0.386 0.372 0.365 0.360 0.358 0.357 0.356 0.356 0.356 S22 ANG -12.50 -23.70 -39.10 -47.50 -51.90 -54.40 -55.70 -56.50 -57.20 -57.80 -58.40 -59.20 -60.10 -61.30 -62.00 -63.30 K 0.268 0.237 0.427 0.596 0.731 0.836 0.919 0.979 1.019 1.047 1.073 1.088 1.093 1.103 1.105 1.106 MAG1 (dB) 27.739 25.009 21.876 19.949 18.394 17.080 15.974 14.959 13.176 11.870 10.810 9.959 9.269 8.594 8.020 7.523 UPA808T(Q2) VCE = 2 V, IC = 5 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.840 0.786 0.643 0.508 0.410 0.343 0.299 0.266 0.247 0.235 0.230 0.229 0.228 0.232 0.230 0.232 ANG -15.00 -30.50 -57.00 -78.00 -94.80 -109.70 -122.50 -134.90 -146.20 -156.00 -165.10 -171.90 -177.70 178.40 174.30 171.50 MAG 13.056 12.136 10.174 8.314 6.820 5.711 4.901 4.275 3.796 3.418 3.106 2.849 2.648 2.454 2.308 2.181 S21 ANG 164.50 152.10 131.10 115.40 104.30 95.80 88.70 82.60 77.30 72.50 68.00 63.70 59.60 55.70 51.90 48.20 MAG 0.020 0.036 0.061 0.077 0.089 0.100 0.111 0.121 0.132 0.144 0.154 0.166 0.178 0.192 0.203 0.215 S12 ANG 80.40 72.30 60.90 54.80 52.10 50.80 50.40 50.10 49.70 49.30 48.70 47.80 47.20 46.20 44.80 43.80 MAG 0.957 0.894 0.736 0.600 0.503 0.437 0.388 0.354 0.328 0.309 0.294 0.284 0.275 0.259 0.258 0.252 S22 ANG -11.50 -21.80 -37.00 -45.80 -51.00 -54.00 -56.00 -57.50 -58.90 -60.10 -61.10 -62.20 -63.40 -64.20 -64.60 -65.20 K 0.158 0.224 0.396 0.567 0.705 0.814 0.897 0.967 1.015 1.047 1.079 1.094 1.104 1.114 1.120 1.123 MAG1 (dB) 28.148 25.278 22.222 20.333 18.844 17.567 16.450 15.482 13.833 12.429 11.332 10.473 9.761 9.015 8.451 7.933 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA808T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA808T(Q1) VCE = 3 V, IC = 3 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.912 0.875 0.769 0.643 0.538 0.453 0.386 0.333 0.290 0.253 0.223 0.200 0.176 0.158 0.141 0.128 S11 ANG -10.30 -22.40 -42.80 -59.60 -72.90 -83.60 -92.40 -100.20 -107.20 -114.00 -120.20 -126.90 -132.70 -138.40 -146.80 -155.20 MAG 8.671 8.248 7.360 6.398 5.475 4.713 4.122 3.650 3.273 2.975 2.721 2.511 2.349 2.200 2.075 1.973 S21 ANG 167.30 157.70 139.80 125.30 114.10 105.60 98.60 92.50 87.40 82.80 78.60 74.70 71.10 67.80 64.50 61.50 MAG 0.019 0.039 0.068 0.088 0.102 0.113 0.122 0.131 0.140 0.150 0.159 0.169 0.180 0.190 0.202 0.213 S12 ANG 86.00 73.60 62.90 56.40 52.60 50.80 50.40 50.20 50.70 51.00 51.60 51.80 52.30 53.00 52.30 52.80 MAG 0.969 0.932 0.825 0.717 0.632 0.571 0.526 0.495 0.475 0.459 0.450 0.443 0.438 0.434 0.430 0.428 S22 ANG -8.60 -16.90 -30.10 -39.00 -44.80 -48.40 -50.80 -52.50 -53.80 -54.90 -55.90 -56.90 -57.90 -59.10 -59.70 -60.90 K 0.080 0.200 0.319 0.452 0.577 0.688 0.787 0.870 0.936 0.988 1.033 1.064 1.084 1.104 1.114 1.118 MAG1 (dB) 26.593 23.253 20.344 18.616 17.298 16.202 15.287 14.450 13.688 12.974 11.225 10.174 9.389 8.669 8.063 7.574 UPA808T(Q2) VCE = 3 V, IC = 3 mA FREQUENCY (GHz) 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.909 0.882 0.786 0.668 0.561 0.476 0.412 0.363 0.326 0.301 0.286 0.278 0.271 0.273 0.268 0.268 ANG -10.10 -22.00 -43.00 -61.10 -76.60 -90.20 -102.20 -113.60 -124.10 -134.10 -143.00 -151.60 -158.60 -164.50 -169.50 -173.50 MAG 8.683 8.324 7.550 6.677 5.794 5.027 4.411 3.913 3.505 3.183 2.904 2.671 2.492 2.318 2.185 2.069 S21 ANG 167.70 158.60 140.80 125.80 113.70 104.10 96.00 88.90 82.80 77.40 72.30 67.60 63.20 59.00 54.90 51.10 MAG 0.019 0.035 0.064 0.084 0.098 0.108 0.117 0.126 0.133 0.142 0.150 0.158 0.167 0.178 0.187 0.196 S12 ANG 82.00 74.20 63.40 55.40 50.20 47.10 45.50 44.10 43.50 43.10 42.70 42.30 42.00 41.70 40.80 40.60 MAG 0.970 0.940 0.841 0.733 0.641 0.569 0.514 0.471 0.439 0.415 0.396 0.380 0.367 0.350 0.346 0.339 S22 ANG -7.70 -15.40 -27.90 -36.90 -43.10 -47.40 -50.40 -52.60 -54.60 -56.30 -57.70 -59.10 -60.60 -61.70 -62.60 -63.50 K 0.152 0.187 0.299 0.431 0.555 0.666 0.763 0.848 0.925 0.977 1.025 1.065 1.090 1.110 1.126 1.138 MAG1 (dB) 26.599 23.763 20.718 19.003 17.718 16.679 15.764 14.921 14.208 13.505 11.892 10.726 9.904 9.125 8.521 7.979 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA808T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1, Q2 8e-17 128 1 17 0.18 3.3e-15 1.48 9.05 1.05 4.3 0.009 4e-15 1.5 0.8 11.1 2.46 0.017 7.5 0.415e-12 0.68 0.53 0.102e-12 0.29 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1, Q2 0.53 0.27 0 0.75 0 0.37 6e-12 11.9 9.55 1.78 69.1 1e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA808T NONLINEAR MODEL SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 LC Pin_1 0.05 nH 0.26 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.05 nH CCE1 0.19 pF LE1 0.95 nH C_E1B2 0.1 pF LB2 0.7 nH C_B1B2 0.05 pF LB 0.05 nH C_B2E2 0.05 pF LE2 0.8 nH 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 LE 0.05 nH Pin_4 Pin_5 LB 0.05 nH Pin_6 Q1 0.45 nH C_E1C2 0.05 pF CCB2 0.26 pF Q2 LC Pin_3 0.05 nH MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 8/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
UPA808T
1. 物料型号: - 型号:UPA808T

2. 器件简介: - UPA808T是NEC公司生产的NPN高频硅高频晶体管,采用超小型6引脚SMT封装。每个晶体管独立安装,可以配置为双晶体管或共栅操作方式。高fT、低电压偏置和小巧的尺寸使其适合各种手持无线应用。

3. 引脚分配: - 1. 晶体管1的集电极 - 2. 晶体管1的发射极 - 3. 晶体管2的集电极 - 4. 晶体管2的发射极 - 5. 晶体管2的基极 - 6. 晶体管1的基极 - 注意:引脚3在封装底部有一个圆圈标识。

4. 参数特性: - 工作温度:TA = 25°C - 集电极截止电流(ICBO):最小值0.1uA - 发射极截止电流(IEBO):最小值0.1uA - 前向电流增益(hFE1):70至140 - 增益带宽(fr):9至11GHz - 反馈电容(Cre2):0.4至0.8pF - 插入功率增益(IS21E12):7至8.5dB - 噪声系数(NF):1.3至2dB

5. 功能详解: - UPA808T的特点是低噪声系数、高增益和低电流操作,使其适合高频应用。

6. 应用信息: - 该器件适用于手持无线设备等高频应用场合。

7. 封装信息: - 封装类型:S06,小型封装风格,尺寸为2mm x 1.25mm。
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