UPA861TD

NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • • LOW VOLTAGE, LOW CURRENT OPERATION LOW CAPACITANCE FOR WIDE TUNING RANGE SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: Just 0.50 mm high 0.4 1 UPA861TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 6 C1 1 Q1 6 B1 vX 3 4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor IDEAL FOR >3 GHz OSCILLATORS +0.07 -0.05 2 0.8 5 1.2 E1 0.4 2 Q2 5 E2 • C2 3 4 B2 NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation. The NE687 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/ buffer amplifier and other applications. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 1 V, IC = 10 mA Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 1 V, IC = 5 mA Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt GHz pF dB dB 11.0 GHz pF dB dB nA nA 50 17.0 75 20.0 0.22 13.0 1.4 2.5 0.30 7.0 UNITS nA nA 70 10.0 110 12.0 0.4 9.0 1.5 2.0 100 100 100 0.8 MIN UPA861TD TD TYP MAX 100 100 140 Q1 fT Cre |S21E|2 NF ICBO IEBO hFE fT Cre |S21E|2E|2 NF Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. Q2 California Eastern Laboratories 0.125 +0.1 -0.05 DESCRIPTION PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) 0.5±0.05 UPA861TD ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation1 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 5 3 2 30 Q2 9 3 1.5 35 ORDERING INFORMATION PART NUMBER UPA861TD-T3-A QUANTITY 10K Pcs./Reel PACKAGING Tape & Reel 90 105 195 Total 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0mm (t)) 250 200 150 100 105 90 2 Elements in total 195 Q2 Q1 50 0 25 50 75 100 125 150 Ambient Temperature, TA (ºC) Q1 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Q2 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance, Cre (pF) Reverse Transfer Capacitance, Cre (pF) 0.5 f = 1 MHz 0.4 0.5 f = 1 MHz 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 1 2 3 4 5 0 2 4 6 8 10 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) UPA861TD TYPICAL CHARACTERISTICS, cont. Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V (TA = 25°C, unless otherwise specified) Q2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 0.0001 0.4 VCE = 1 V Collector Current, IC (mA) 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Current, IC (mA) 10 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 0.0001 0.4 VCE = 2 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 0.0001 0.4 VCE = 2 V Collector Current, IC (mA) Collector Current, IC (mA) 0.5 0.6 0.7 0.8 0.9 1.0 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 30 400 µA IB : 50 µ step A 300 µA 25 20 15 10 5 IB = 50 µA 0 1 2 3 4 100 µA 200 µA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 500 µA 450 µA 400 µA 350 µA Collector Current, IC (mA) Collector Current, IC (mA) 30 300 µA 250 µA 20 200 µA 150 µA 10 100 µA IB = 50 µA 0 1 2 3 4 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) UPA861TD TYPICAL CHARACTERISTICS, cont. Q1 DC VOLTAGE vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 VCE = 1 V (TA = 25°C, unless otherwise specified) Q2 DC VOLTAGE vs. COLLECTOR CURRENT Dc Current Gain, hFE Dc Current Gain, hFE 100 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25 Gain Bandwidth Product, fΓ (GHz) 14 12 10 8 6 4 2 0 Gain Bandwidth Product, fΓ (GHz) VCE = 1 V f = 2 GHz VCE = 1 V f = 2 GHz 20 15 10 5 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 25 20 15 10 5 0 0.1 MSG MAG VCE = 1 V IC = 10 mA INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 30 25 20 15 10 5 0 0.1 1 10 |S21e|2 MSG MAG VCE = 1 V IC = 20 mA |S21e|2 1 10 Frequency, f (GHz) Frequency, f (GHz) UPA861TD TYPICAL CHARACTERISTICS, cont. Q1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT (TA = 25°C, unless otherwise specified) Q2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 1 V f = 2 GHz 16 MSG 12 |S21e|2 MAG Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 16 MSG VCE = 1 V f = 2 GHz MAG 12 |S21e|2 8 8 4 4 0 1 10 100 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 10 VCE = 1 V f = 4 GHz 8 MAG 20 VCE = 1 V f = 4 GHz 16 6 12 MSG MAG 4 |S21e|2 8 |S21e|2 4 2 0 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 10 VCE = 2 V f = 4 GHz 8 MAG 6 |S21e|2 4 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 VCE = 2 V f = 4 GHz 8 6 MSG 4 |S21e|2 2 2 0 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) UPA861TD TYPICAL CHARACTERISTICS, cont. Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 10 20 VCE = 1 V f = 1 GHz 8 Ga 6 5 VCE = 1 V f = 1 GHz Ga (TA = 25°C, unless otherwise specified) Q2 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 24 20 16 12 8 NF 4 0 100 Noise Figure, NF (dB) Noise Figure, NF (dB) 16 4 3 2 1 0 6 12 4 8 2 NF 0 1 10 4 0 100 1 10 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 10 VCE = 1 V f = 2 GHz 20 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 6 5 VCE = 1 V f = 2 GHz 24 20 16 12 8 NF 1 0 4 0 100 Noise Figure, NF (dB) Noise Figure, NF (dB) 8 16 4 3 2 6 Ga 12 Ga 4 8 2 NF 0 4 1 10 0 100 1 10 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 10 VCE = 2 V f = 2 GHz 8 16 20 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT 6 5 VCE = 2 V f = 2 GHz 24 20 Ga 16 12 8 NF 1 0 4 0 100 Noise Figure, NF (dB) Noise Figure, NF (dB) 6 Ga 4 3 2 12 4 8 2 NF 0 1 10 4 0 100 1 10 Collector Current, IC (mA) Collector Current, IC (mA) UPA861TD TYPICAL SCATTERING PARAMETERS j50 +90° +120° j100 S21 = 10 j25 +60° +150° j10 S12 = .2 +30° 0 10 25 50 100 S22 = 1 +180° +0° -j10 S11 = 1 -150° -30° -j25 -j50 0.100 to 3.000GHz by 0.050 -j100 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 10 mA -120° -90° 0.100 to 3.000GHz by 0.050 -60° UPA861TD (Q1) VCE = 1 V, IC = 10 mA Frequency GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 MAG 0.691 0.625 0.559 0.507 0.470 0.445 0.426 0.415 0.408 0.404 0.402 0.400 0.401 0.403 0.406 0.410 0.414 0.419 0.424 0.428 0.434 0.438 0.443 0.447 0.452 0.456 0.461 0.464 0.467 0.470 S11 ANG - 25.9 - 51.3 - 72.3 - 89.7 -104.3 -116.3 -126.4 -135.1 -142.8 -149.5 -155.5 -161.0 -165.9 -170.4 -174.4 -178.1 178.5 175.3 172.5 169.9 167.5 165.3 163.2 161.3 159.5 158.0 156.5 155.3 154.1 153.0 MAG 20.769 18.506 16.074 13.885 12.048 10.549 9.332 8.348 7.536 6.861 6.287 5.800 5.380 5.014 4.693 4.409 4.155 3.930 3.729 3.543 3.376 3.223 3.086 2.959 2.842 2.734 2.634 2.544 2.459 2.381 S21 ANG 160.8 144.8 132.3 122.8 115.3 109.5 104.6 100.5 96.9 93.7 90.8 88.2 85.7 83.4 81.2 79.2 77.3 75.4 73.6 71.9 70.2 68.6 67.1 65.7 64.2 62.8 61.5 60.1 58.8 57.6 MAG 0.018 0.033 0.044 0.052 0.058 0.064 0.068 0.073 0.078 0.082 0.087 0.091 0.096 0.100 0.105 0.110 0.114 0.119 0.123 0.128 0.133 0.137 0.142 0.146 0.151 0.155 0.160 0.164 0.169 0.173 S12 ANG 78.6 66.0 59.6 55.7 53.8 52.4 52.1 51.9 52.0 52.0 52.4 52.7 52.9 53.1 53.1 53.3 53.4 53.4 53.4 53.2 53.2 53.0 53.0 52.8 52.6 52.3 52.2 51.9 51.8 51.4 MAG 0.902 0.793 0.678 0.581 0.501 0.440 0.389 0.349 0.317 0.291 0.269 0.250 0.234 0.222 0.212 0.204 0.198 0.193 0.190 0.188 0.188 0.188 0.189 0.190 0.192 0.193 0.195 0.198 0.200 0.202 S22 ANG - 18.3 - 32.9 - 44.0 - 52.3 - 58.7 - 63.8 - 68.2 - 72.0 - 75.7 - 79.2 - 82.6 - 86.1 - 89.6 - 93.1 - 96.9 -100.5 -104.0 -107.7 -111.4 -114.7 -118.1 -121.1 -124.1 -126.8 -129.2 -131.1 -132.9 -134.4 -136.1 -137.1 K 0.17 0.28 0.38 0.47 0.56 0.63 0.70 0.76 0.81 0.85 0.89 0.92 0.95 0.97 1.00 1.01 1.03 1.05 1.06 1.07 1.08 1.08 1.09 1.10 1.10 1.11 1.11 1.11 1.12 1.12 MAG1 (dB) 30.51 27.44 25.58 24.25 23.17 22.20 21.35 20.58 19.88 19.22 18.61 18.03 17.49 16.99 16.50 15.32 14.53 13.89 13.35 12.83 12.37 11.93 11.53 11.15 10.80 10.46 10.15 9.85 9.56 9.30 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA861TD TYPICAL SCATTERING PARAMETERS +90° +120° j25 j100 S21 = 10 j50 +60° +150° j10 S11 = 1 S12 = .2 +30° 0 10 25 50 100 +180° +0° -j10 S22 = 1 -150° -30° -j25 -j50 0.100 to 3.000GHz by 0.050 -j100 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 20 mA -120° -90° 0.100 to 3.000GHz by 0.050 -60° UPA861TD (Q2) VCE = 1 V, IC = 20 mA Frequency GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 MAG 0.401 0.358 0.308 0.265 0.231 0.206 0.187 0.174 0.164 0.159 0.156 0.154 0.154 0.157 0.160 0.165 0.170 0.177 0.183 0.190 0.197 0.204 0.211 0.218 0.224 0.231 0.237 0.243 0.249 0.254 S11 ANG - 21.6 - 40.9 - 56.8 - 70.1 - 81.9 - 92.6 -102.5 -111.7 -120.4 -128.6 -136.3 -143.5 -150.2 -156.0 -161.2 -165.9 -170.1 -174.0 -176.9 -179.8 177.6 175.8 173.4 171.9 170.2 169.0 167.8 166.9 165.9 165.3 MAG 29.200 25.940 22.512 19.468 16.923 14.860 13.191 11.835 10.710 9.775 8.985 8.311 7.727 7.219 6.772 6.381 6.030 5.716 5.437 5.180 4.949 4.736 4.543 4.366 4.200 4.047 3.906 3.776 3.654 3.542 S21 ANG 161.7 145.9 133.8 124.6 117.4 111.7 107.0 103.0 99.5 96.4 93.6 91.0 88.7 86.4 84.3 82.4 80.5 78.6 76.8 75.2 73.5 71.8 70.3 68.8 67.2 65.8 64.3 62.9 61.5 60.1 MAG 0.008 0.015 0.022 0.027 0.031 0.036 0.040 0.045 0.049 0.054 0.059 0.063 0.068 0.072 0.077 0.082 0.087 0.092 0.096 0.101 0.106 0.111 0.116 0.121 0.126 0.130 0.135 0.141 0.146 0.151 S12 ANG 83.0 74.6 72.4 72.0 72.1 71.6 72.0 72.0 72.3 72.5 72.7 72.8 72.9 72.9 72.8 72.7 72.5 72.3 72.0 71.8 71.6 71.3 71.1 70.8 70.4 70.0 69.6 69.4 68.9 68.5 MAG 0.891 0.805 0.710 0.629 0.563 0.512 0.471 0.439 0.413 0.391 0.372 0.355 0.341 0.328 0.316 0.306 0.297 0.288 0.280 0.273 0.266 0.261 0.255 0.250 0.245 0.242 0.238 0.237 0.234 0.235 S22 ANG - 12.9 - 23.2 - 30.3 - 35.1 - 38.1 - 40.2 - 41.6 - 42.7 - 43.7 - 44.7 - 45.5 - 46.6 - 47.6 - 48.7 - 50.1 - 51.4 - 52.9 - 54.6 - 56.4 - 58.3 - 60.4 - 62.5 - 64.8 - 67.0 - 69.4 - 71.7 - 74.1 - 76.5 - 79.1 - 81.3 K 0.43 0.51 0.62 0.71 0.79 0.86 0.90 0.94 0.97 0.99 1.00 1.02 1.03 1.04 1.05 1.05 1.06 1.06 1.07 1.07 1.07 1.07 1.07 1.07 1.07 1.06 1.06 1.06 1.06 1.05 MAG1 (dB) 35.60 32.24 30.19 28.66 27.35 26.20 25.15 24.22 23.37 22.58 21.43 20.30 19.45 18.73 18.06 17.48 16.93 16.43 15.96 15.52 15.11 14.73 14.35 14.01 13.68 13.37 13.07 12.81 12.53 12.31 UPA861TD NON-LINEAR MODEL BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC (1) Gummel-Poon Model Q1 8e-17 128 1 17 0.18 3.3e-15 1.48 9.05 1.05 4.3 0.009 4e-15 2 0.8 11.1 2.46 0.02 7.5 0.415e-12 0.68 0.53 0.102e-12 0.29 Q2 137e-18 129 0.9992 22.4 2.8 229e-15 2.5 81.7 0.9944 1.9 0.018 227e-18 1.17 0.75 5 3 0.005 6 0.68e-12 0.92 0.26 0.16e-12 0.64 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.53 1 0 0.75 0 0.37 6e-12 11.9 9.55 1.78 69.1 1e-9 1.11 0 3 0 1 Q2 0.24 0.3 0 0.75 0 0.55 5e-12 0.05 0.5 0.005 0 1.0e-9 1.11 0 3 117e-15 1.34 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 2.5 V, IC = 0.5 mA to 20 mA Date: 09/02 UPA861TD SCHEMATIC 0.1 pF C_C1B2 0.03 pF CCBPKG1 LC Pin_1 0.01 nH LC1 0.85 nH 0.2 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.01 nH CCE1 0.25 pF LE1 0.45 nH C_E1B2 0.1 pF LE2 CCE2 0.35 pF LC Pin_3 0.01 nH LC2 0.95 nH LB 0.01 nH Pin_6 Q1 1.05 nH C_B1B2 0.01 pF LE 0.01 nH C_B2E2 0.01 pF Pin_5 C_E1C2 0.05 pF 0.55 nH CCB2 0.01 pF Q2 LB2 0.9 nH LB 0.01 nH Pin_4 0.03 pF CCEPKG2 0.1 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 20 mA Date: 09/02 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 09/17/2002 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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