UPA862TD

NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: 1 UPA862TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 6 Just 0.50 mm high 0.4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor 1.2 +0.07 -0.05 0.8 C1 1 Q1 6 B1 vY 2 5 E1 4 0.4 2 Q2 5 E2 • IDEAL FOR 1-2 GHz OSCILLATORS 3 C2 3 4 B2 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 0.5±0.05 0.125 +0.1 -0.05 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB nA nA 100 GHz pF dB dB dB 3.0 4.5 5.0 120 6.5 0.6 4.0 5.5 1.9 2.5 0.8 7 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz UNITS nA nA 75 10 110 12 0.4 8.5 1.5 2.5 600 600 145 0.7 MIN UPA862TD TD TYP MAX 100 100 150 Q1 fT Cre |S21E|2 NF ICBO IEBO hFE fT Cre |S21E|2 Q2 |S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA862TD ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation1 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 9 6 2 30 Q2 9 5.5 1.5 100 ORDERING INFORMATION PART NUMBER UPA862TD-T3-A QUANTITY 10K Pcs./Reel PACKAGING Tape & Reel 180 192 210 Total 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Total Power Dissipation, Ptot (mW) Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 250 210 190 180 200 2 Elements in total 150 Q2 Q1 100 50 0 25 50 75 100 125 150 Ambient Temperature, TA (°C) Q1 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Q2 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance, Cre (pF) Reverse Transfer Capacitance, Cre (pF) 0.5 f = 1 MHz 1.0 f = 1 MHz 0.4 0.8 0.3 0.6 0.2 0.4 0.1 0.2 0 2 4 6 8 10 0 2 4 6 8 10 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C) Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 100 Q2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 1 V Collector Current, IC (mA) 1 Collector Current, IC (mA) 0.5 0.6 0.7 0.8 0.9 1.0 10 10 1 0.1 0.1 0.01 0.01 0.001 0.001 0.0001 0.4 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 2 V 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V Collector Current, IC (mA) 1 Collector Current, IC (mA) 0.5 0.6 0.7 0.8 0.9 1.0 10 10 1 0.1 0.1 0.01 0.01 0.001 0.001 0.0001 0.4 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 400 µa Collector Current, IC (mA) 50 30 300 µa 270 µa 240 µa 240 µa 20 180 µa 150 µa 120 µa 10 90 µa 60 µa IB = 30 µa 0 1 2 3 4 5 6 7 8 360 µa 320 µa Collector Current, IC (mA) 40 280 µa 240 µa 30 200 µa 160 µa 120 µa 20 10 80 µa IB = 40 µa 0 1 2 3 4 5 6 7 8 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C) Q1 DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 1 V 1000 VCE = 1 V Q2 DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, HFE 100 DC Current Gain, HFE 1 10 100 100 10 0.1 10 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 2 V 1000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V DC Current Gain, HFE 100 DC Current Gain, HFE 1 10 100 100 10 0.1 10 0.1 1 10 100 Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 10 Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 8 Gain Bandwidth Product, fT (GHz) 12 10 8 6 4 2 0 0.1 1 10 100 Gain Bandwidth Product, fT (GHz) VCE = 2 V f = 2 GHz 6 4 2 0 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C) Q1 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 35 VCE = 1 V IC = 10 mA 30 25 20 15 10 5 0 0.1 MSG MAG Q2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 1 V IC = 5 mA 30 25 MSG 20 MAG 15 10 5 |S21e|2 0 0.1 1 10 |S21e|2 1 10 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 35 VCE = 2 V IC = 10 mA 30 25 20 15 10 5 0 0.1 MSG MAG VCE = 1 V IC = 15 mA 30 25 20 15 10 5 0 0.1 |S21e|2 MSG MAG |S21e|2 1 10 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 3 V IC = 10 mA 30 25 20 15 10 5 0 0.1 MSG MAG VCE = 2 V IC = 5 mA 30 25 MSG 20 15 10 5 |S21e|2 0 0.1 1 10 MAG |S21e|2 1 10 Frequency, f (GHz) Frequency, f (GHz) UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C) Q1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 Q2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 1 V f = 1 GHz 20 MSG MAG VCE = 1 V f = 1 GHz MSG MAG 15 15 |S21e|2 10 |S21e|2 10 5 5 0 1 10 100 0 1 10 100 Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 15 VCE = 1 V f = 2 GHz 20 Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 1 V f = 2 GHz MAG 10 15 MSG MAG 10 |S21e|2 5 5 |S21e|2 0 0 1 10 100 -5 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) VCE = 2 V f = 2 GHz 20 Insertion Power Gain, (dB) Maximum Available Gain, MAG(dB) VCE = 2 V f = 2 GHz MAG |S21e|2 MSG MAG 10 15 5 |S21e|2 10 |S21e|2 0 5 0 1 10 100 -5 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C) Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 1 V f = 1 GHz 20 Q2 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 1 GHz 18 4 12 6 12 3 9 4 8 2 6 2 NF 4 1 NF 3 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 1 V f = 2 GHz 20 6 Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 18 VCE = 1 V f = 2 GHz 4 Ga 3 12 6 Ga 4 12 9 8 2 NF 6 2 NF 4 1 3 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 2 V f = 2 GHz 20 6 Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 18 VCE = 2 V f = 2 GHz 4 Ga 3 12 6 Ga 12 9 4 8 2 NF 6 2 NF 4 1 3 0 1 10 0 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) Associated Gain, Ga (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) 8 16 Associated Gain, Ga (dB) 5 15 Associated Gain, Ga (dB) Noise Figure, NF (dB) 8 16 Associated Gain, Ga (dB) 5 15 Noise Figure, NF (dB) Associated Gain, Ga (dB) Noise Figure, NF (dB) 8 Associated Gain, Ga (dB) Ga 16 5 Ga 15 Noise Figure, NF (dB) UPA862TD TYPICAL SCATTERING PARAMETERS j50 +90° +120° j100 S21 = 10 j25 +60° +150° j10 S12 = .2 +30° 0 10 25 50 100 S22 = 1 +180° +0° -j10 S11 = 1 -150° -30° -j25 -j50 0.100 to 3.000GHz by 0.050 -j100 Coordinates in Ohms Frequency in GHz VCE = 2.5 V, IC = 10 mA -120° -90° 0.100 to 3.000GHz by 0.050 -60° UPA82TD (Q1) VCE = 2.5V, IC = 10 mA Frequency GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 MAG 0.726 0.667 0.594 0.521 0.459 0.408 0.366 0.334 0.310 0.292 0.282 0.273 0.268 0.266 0.264 0.264 0.265 0.267 0.270 0.276 0.282 0.288 0.295 0.301 0.307 0.312 0.316 0.321 0.325 0.329 S11 ANG - 18.1 - 37.4 - 53.3 - 66.9 - 78.6 - 89.0 - 98.3 -107.2 -115.8 -123.8 -131.2 -138.6 -145.2 -151.1 -156.7 -161.9 -166.7 -171.4 -175.6 -179.4 177.1 174.1 171.4 168.9 166.8 165.1 163.4 161.9 160.2 158.9 MAG 20.331 18.720 16.706 14.756 13.006 11.512 10.269 9.233 8.382 7.661 7.052 6.529 6.079 5.681 5.329 5.015 4.736 4.488 4.266 4.060 3.878 3.704 3.556 3.414 3.283 3.159 3.049 2.943 2.848 2.759 S21 ANG 161.8 148.4 136.9 127.5 120.0 113.9 108.8 104.4 100.7 97.4 94.4 91.7 89.2 86.8 84.6 82.5 80.5 78.7 76.8 75.0 73.3 71.6 70.0 68.5 66.9 65.5 64.1 62.7 61.3 60.0 MAG 0.013 0.024 0.033 0.040 0.045 0.050 0.055 0.060 0.064 0.068 0.073 0.077 0.082 0.086 0.091 0.095 0.100 0.104 0.109 0.113 0.118 0.122 0.127 0.131 0.136 0.140 0.144 0.148 0.153 0.157 S12 ANG 80.9 71.4 66.5 62.4 60.6 59.4 59.1 58.9 59.0 59.3 59.4 59.5 59.7 59.7 59.8 59.8 59.7 59.6 59.5 59.5 59.2 59.1 58.8 58.5 58.1 58.0 57.8 57.4 57.1 56.7 MAG 0.937 0.863 0.774 0.691 0.623 0.565 0.517 0.477 0.446 0.419 0.399 0.379 0.363 0.348 0.335 0.322 0.310 0.299 0.290 0.282 0.274 0.269 0.264 0.259 0.256 0.251 0.248 0.245 0.243 0.242 S22 ANG - 11.7 - 21.2 - 28.1 - 33.1 - 36.3 - 38.6 - 40.0 - 41.0 - 41.9 - 42.5 - 43.3 - 44.0 - 45.1 - 46.2 - 47.6 - 48.7 - 50.1 - 51.5 - 53.0 - 54.6 - 56.5 - 58.7 - 60.7 - 63.0 - 65.2 - 67.5 - 69.6 - 71.6 - 73.2 - 75.0 K 0.21 0.30 0.39 0.50 0.58 0.66 0.73 0.79 0.84 0.88 0.92 0.95 0.97 0.99 1.01 1.03 1.04 1.06 1.07 1.08 1.09 1.09 1.09 1.10 1.10 1.11 1.11 1.12 1.12 1.12 MAG1 (dB) 31.83 28.89 27.06 25.69 24.56 23.59 22.70 21.91 21.18 20.50 19.86 19.28 18.71 18.18 17.15 16.18 15.48 14.87 14.33 13.84 13.40 12.97 12.61 12.24 11.90 11.55 11.23 10.91 10.62 10.35 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA862TD TYPICAL SCATTERING PARAMETERS j50 +90° +120° j100 S21 = 10 j25 +60° +150° j10 S12 = .2 +30° 0 10 25 50 100 S22 = 1 +180° +0° -j10 S11 = 1 -150° -j100 -30° -j25 -j50 0.100 to 3.000GHz by 0.050 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 10 mA -120° -90° -60° 0.100 to 3.000GHz by 0.050 UPA862TD (Q2) VCE = 1 V, IC = 10 mA Frequency GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 MAG 0.692 0.653 0.634 0.622 0.616 0.611 0.609 0.609 0.614 0.618 0.625 0.630 0.634 0.638 0.641 0.644 0.647 0.652 0.657 0.663 0.670 0.676 0.683 0.687 0.692 0.695 0.698 0.702 0.706 0.710 S11 ANG - 58.7 -100.9 -124.2 -139.2 -149.4 -157.1 -163.3 -168.2 -172.5 -176.2 -179.4 177.6 175.0 172.6 170.5 168.4 166.5 164.5 162.8 161.1 159.5 158.1 156.8 155.5 154.5 153.5 152.6 151.8 150.8 150.0 MAG 20.972 16.060 12.209 9.673 7.951 6.721 5.816 5.118 4.573 4.134 3.774 3.469 3.210 2.984 2.788 2.615 2.462 2.327 2.207 2.098 2.000 1.908 1.827 1.750 1.679 1.612 1.554 1.498 1.448 1.401 S21 ANG 144.3 123.6 111.1 102.9 96.9 92.2 88.1 84.6 81.4 78.5 75.7 73.1 70.5 68.1 65.8 63.6 61.4 59.3 57.3 55.3 53.4 51.4 49.6 47.8 46.1 44.5 42.9 41.4 40.0 38.6 MAG 0.028 0.041 0.048 0.053 0.056 0.059 0.063 0.067 0.070 0.074 0.078 0.083 0.088 0.092 0.097 0.102 0.107 0.112 0.118 0.123 0.129 0.134 0.140 0.146 0.152 0.158 0.165 0.171 0.178 0.184 S12 ANG 61.7 48.9 44.0 42.6 42.9 44.5 46.1 47.9 49.8 51.6 53.1 54.8 56.0 57.2 58.2 59.3 60.3 61.1 61.8 62.4 62.9 63.3 63.7 63.9 64.2 64.3 64.5 64.7 64.7 64.7 MAG 0.800 0.599 0.465 0.382 0.329 0.291 0.264 0.243 0.229 0.218 0.212 0.206 0.204 0.202 0.203 0.203 0.204 0.207 0.211 0.216 0.222 0.230 0.239 0.248 0.258 0.267 0.277 0.286 0.294 0.303 S22 ANG - 29.7 - 46.0 - 53.6 - 58.0 - 60.7 - 63.0 - 64.7 - 66.7 - 68.7 - 71.1 - 73.6 - 76.7 - 80.0 - 83.6 - 87.5 - 91.2 - 95.2 - 99.0 -102.7 -106.1 -109.6 -112.7 -115.9 -119.0 -121.9 -124.6 -127.2 -129.7 -131.9 -133.8 K 0.22 0.31 0.43 0.54 0.65 0.74 0.82 0.89 0.94 0.98 1.01 1.03 1.05 1.07 1.08 1.10 1.11 1.11 1.11 1.10 1.09 1.08 1.06 1.05 1.04 1.03 1.03 1.02 1.00 0.99 MAG1 (dB) 28.79 25.88 24.04 22.64 21.52 20.54 19.66 18.86 18.13 17.46 16.31 15.12 14.29 13.53 12.83 12.21 11.65 11.16 10.75 10.42 10.11 9.85 9.63 9.39 9.16 8.95 8.74 8.62 8.69 8.81 UPA862TD UPA862TD NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC (1) Gummel-Poon Model (2) AF and KF are 1/f noise parameters and are bias dependant. The appropriate values for the 1/f noise parameters (AF and KF) shall be chosen from the table below, according to the desired current range. IC = 5 mA IC =10 mA 997.6e-12 2.375 IC =10 mA 855e-12 2.551 IC = 15 mA 500.2e-12 2.288 IC = 15 mA 1.73e-9 2.626 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 2.5 V, IC = 1 mA to 20 mA Date: 08/03 Q1 NE685 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.08 12.4 infinity 0 2 1.3 5 3 0.005 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Q2 NE851 137e-18 166 0.9871 20.4 50 80.4e-15 2.4 28.7 0.9889 2.7 0.021 532e-18 1.28 0.45 4 1 0 1.7 2.4e-12 0.87 0.34 0.65e-12 0.52 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF (2) AF (2) Q1 NE685 0.34 0.5 0 0.75 0 0.1 2.0e-12 6 3 0.005 0 1.0e-9 1.11 0 3 0 1 Q2 NE851 0.14 0.5 0 0.75 0 0.55 18e-12 0.1 2 0.03 0 1.0e-9 1.11 0 3 0 1 Q1 KF AF 54.38e-12 2.071 IC = 5 mA Q2 KF AF 4.547e-15 1.4 For a better understanding on AF and KF parameters, please refer to AN1026. UPA862TD SCHEMATIC 0.1 pF C_C1B2 0.03 pF CCBPKG1 LC Pin_1 0.01 nH CCE1 0.28 pF LE1 0.6 nH C_E1B2 0.1 pF LE2 CCE2 0.25 pF LC Pin_3 0.01 nH LC2 0.8 nH CCB2 0.01 pF 0.5 nH C_B2E2 0.01 pF C_B1B2 0.01 pF LE 0.01 nH Pin_5 LC1 1.2 nH 0.07 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.01 nH LB 0.01 nH Pin_6 Q1 1.1 nH C_E1C2 0.05 pF Q2 LB2 0.6 nH LB 0.01 nH Pin_4 0.03 pF CCEPKG2 0.1 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 1 mA to 20 mA Date: 08/03 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/04/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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