BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3226TB
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low current • Medium output power • High linearity • Power gain • Noise Figure • Supply voltage • Port impedance : ICC = 15.5 mA TYP. @ VCC = 5.0 V : PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz : PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz : PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) = +5.7 dBm TYP. @ f = 2.2 GHz : GP = 25.0 dB TYP. @ f = 1.0 GHz : GP = 26.0 dB TYP. @ f = 2.2 GHz : NF = 5.3 dB TYP. @ f = 1.0 GHz : NF = 4.9 dB TYP. @ f = 2.2 GHz : VCC = 4.5 to 5.5 V : input/output 50 Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number Order Number Package Marking C3N Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel.
µPC3226TB-E3
µPC3226TB-E3-A 6-pin super minimold
(Pb-Free)
Note
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3226TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10558EJ01V0DS (1st edition) Date Published May 2005 CP(K)
UPC3226TB
PIN CONNECTIONS
(Top View)
3 43
(Top View)
44
(Bottom View)
3
Pin No. 1
Pin Name INPUT GND GND OUTPUT GND
VCC
C3N
2 3 4
2
52
55
2
1
61
66
1
5
6
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Part No. fu (GHz) 2.9 2.3 1.0 2.7 3.2 2.8 3.2 PO (sat) (dBm) +10.0 +11.5 +13.5 +8.5 +12.0 +15.5
Note
GP (dB) 15 23 33 23 23 32.5
Note
NF (dB) 6.5 5.0 3.5 6.0 4.5 3.7
Note
ICC (mA) 26 25 22 25 19 24.5 15.5
Package 6-pin super minimold
Marking C1D C1E C1F C2L C3J C3M C3N
µPC2708TB µ PC2709TB µPC2710TB µPC2776TB µPC3223TB µPC3225TB µPC3226TB
+13.0
25
5.3
Note µPC3225TB is f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
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Data Sheet PU10558EJ01V0DS
UPC3226TB
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Voltage Total Circuit Current Power Dissipation Operating Ambient Temperature Storage Temperature Input Power Symbol VCC ICC PD TA Tstg Pin TA = +25°C TA = +25°C TA = +25°C TA = +85°C Note Conditions Ratings 6.0 40 270 −40 to +85 −55 to +150 +10 Unit V mA mW °C °C dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Supply Voltage Operating Ambient Temperature Symbol VCC TA Conditions MIN. 4.5 −40 TYP. 5.0 +25 MAX. 5.5 +85 Unit V °C
Data Sheet PU10558EJ01V0DS
3
UPC3226TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter Circuit Current Power Gain 1 Power Gain 2 Power Gain 3 Power Gain 4 Power Gain 5 Power Gain 6 Saturated Output Power 1 Saturated Output Power 2 Gain 1 dB Compression Output Power 1 Gain 1 dB Compression Output Power 2 Noise Figure 1 Noise Figure 2 Isolation 1 Isolation 2 Input Return Loss 1 Input Return Loss 2 Output Return Loss 1 Output Return Loss 2 Input 3rd Order Distortion Intercept Point 1 Symbol ICC GP1 GP2 GP3 GP4 GP5 GP6 PO (sat) 1 PO (sat) 2 PO (1 dB) 1 PO (1 dB) 2 NF1 NF2 ISL1 ISL2 RLin1 RLin2 RLout1 RLout2 IIP31 Test Conditions No input signal f = 0.1 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 1.8 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 2.6 GHz, Pin = −30 dBm f = 3.0 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −2 dBm f = 2.2 GHz, Pin = −8 dBm f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm Input 3rd Order Distortion Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm Output 3rd Order Distortion Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm 2nd Order Intermodulation Distortion IM 2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm K factor 1 K factor 2 K1 K2 f = 1.0 GHz f = 2.2 GHz − − 1.4 1.6 − − − − − 43.0 − dBc − +15.0 − − +20.0 − dBm − −11.0 − MIN. 12.5 22.0 23.0 23.0 23.0 22.5 22.0 +10.0 +6.0 +5.0 +3.0 − − 31 33 10.0 9.0 10.0 10.0 − TYP. 15.5 24.0 25.0 26.0 26.0 25.5 25.0 +13.0 +9.0 +7.5 +5.7 5.3 4.9 34 36 14.0 13.0 13.0 13.0 −5.0 MAX. 19.5 26.0 27.5 29.0 29.0 29.0 28.5 − − − − 6.0 6.0 − − − − − − − dBm dB dB dB dB dBm dBm Unit mA dB
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Data Sheet PU10558EJ01V0DS
UPC3226TB
TEST CIRCUIT
VCC
C4 1 000 pF
1 000 pF C3 L 6 50 Ω IN C1 100 pF 1 4 C2 100 pF 50 Ω OUT
100 nH
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Type C1, C2 C3 C4 L Chip Capacitor Chip Capacitor Feed-through Capacitor Chip Inductor Value 100 pF 1 000 pF 1 000 pF 100 nH
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc).
Data Sheet PU10558EJ01V0DS
5
UPC3226TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
IN
C1 C3 L
C2
OUT
C4
COMPONENT LIST Notes
Value
1.
C1, C2 C3, C4 L1 100 pF 1 000 pF 100 nH
30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes
2. 3. 4.
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Data Sheet PU10558EJ01V0DS
UPC3226TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified)
CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE
18 17 TA = +85°C
Circuit Current ICC (mA)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
25 No Input Signal
Circuit Current ICC (mA)
20
16 15 14 13 12 –50
15
10
+25°C
5 –40°C 0 1 2 3 4 5 6
–25
0
25
50
75
100
Supply Voltage VCC (V)
Operating Ambient Temperature TA (°C)
POWER GAIN vs. FREQUENCY
30 VCC = 5.5 V 25
Power Gain GP (dB) Isolation ISL (dB)
ISOLATION vs. FREQUENCY
0 –10 –20 VCC = 4.5 V –30 –40 –50 –60 0.1 5.0 V 5.5 V
20 4.5 V 5.0 V 15 10 5 0 0.1
0.3
0.5
1.0
2.0
3.0
0.3
0.5
1.0
2.0
3.0
Frequency f (GHz)
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0
Input Return Loss RLin (dB)
OUTPUT RETURN LOSS vs. FREQUENCY
0
Output Return Loss RLout (dB)
–5 –10 –15 –20 –25 –30 0.1 5.0 V 5.5 V 0.3 0.5 1.0 2.0 3.0
–5 VCC = 4.5 V –10 –15 –20 –25 –30 0.1 5.0 V
VCC = 4.5 V
5.5 V
0.3
0.5
1.0
2.0
3.0
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10558EJ01V0DS
7
UPC3226TB
OUTPUT POWER vs. INPUT POWER
+20 +15
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
+20 +15
Output Power Pout (dBm)
f = 1.0 GHz VCC = 5.5 V
f = 2.2 GHz VCC = 5.5 V
+10 +5 5.0 V 0 –5 –10 –15 –20 –40 –30 –20 –10 0 +10 +20 4.5 V
+10 +5 0 –5 –10 –15 –20 –40 –30 –20 –10 0 +10 5.0 V 4.5 V
Input Power Pin (dBm)
Input Power Pin (dBm)
NOISE FIGURE vs. FREQUENCY
8.0 7.5
Noise Figure NF (dB) Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
8.0 7.5
7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0
VCC = 4.5 V 5.0 V
7.0 6.5 6.0 5.5 5.0 4.5 4.0
TA = +85°C +25°C
5.5 V 500 1 000 1 500 2 000 2 500
3.5 3.0 0 500 1 000 1 500
–40°C 2 000 2 500
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10558EJ01V0DS
UPC3226TB
Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm)
Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
+20 +10 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –40
–30
IM3
OUTPUT POWER, IM3 vs. INPUT POWER
+20 +10 0 –10 –20 –30 –40 –50 –60 –70 –40
–35
IM3
f1 = 1 000 MHz f2 = 1 001 MHz
Pout
f1 = 2 200 MHz f2 = 2 201 MHz
Pout
–20
–10
0
–30
–25
–20
–15
Input Power Pin (dBm)
Input Power Pin (dBm)
Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm)
+20 +10 0 –10
2nd Order Intermodulation Distortion IM2 (dBc)
OUTPUT POWER, IM2 vs. INPUT POWER
f1 = 1 000 MHz f2 = 1 001 MHz Pout
IM2 vs. INPUT POWER
60 50
VCC = 5.5 V
40 30 20 10 0 –10 –40
–30
4.5 V 5.0 V
IM2
–20 –30 –40 –50 –60 –70 –40
–30 –20
–10
0
–20
–10
0
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10558EJ01V0DS
9
UPC3226TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V, Pin = −30 dBm)
S11−FREQUENCY
START : 100.000 000 MHz STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 73.191 Ω − 12.578 Ω 2 : 2 200 MHz 61.383 Ω − 32.15 Ω
S22−FREQUENCY
START : 100.000 000 MHz STOP : 5 100.000 000 MHz
1
2
1 : 1 000 MHz 80.102 Ω − 13.164 Ω 2 : 2 200 MHz 56.375 Ω − 30.771 Ω
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Data Sheet PU10558EJ01V0DS
UPC3226TB
PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1 1.25±0.1
2.0±0.2
1.3
0.65
0.65
0.1 MIN.
0.9±0.1
0.7
0 to 0.1
0.15+0.1 –0.05
0.2+0.1 –0.05
Data Sheet PU10558EJ01V0DS
11
UPC3226TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260
For soldering
Preheating temperature (package surface temperature) : 120°C or below
Caution Do not use different soldering methods together (except for partial heating).
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Data Sheet PU10558EJ01V0DS
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Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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