UPC3232TB-E3

BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current • Medium output power • High linearity • Power gain • Gain flatness • Noise figure • Supply voltage • Port impedance : ICC = 26.0 mA TYP. : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz : GP = 32.8 dB MIN. @ f = 1.0 GHz : GP = 33.5 dB MIN. @ f = 2.2 GHz : ∆GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz : NF = 4 dB TYP. @ f = 1.0 GHz : NF = 4.1 dB TYP. @ f = 2.2 GHz : VCC = 4.5 to 5.5 V : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number Order Number Package Marking C3S Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel µPC3232TB-E3 µPC3232TB-E3-A 6-pin super minimold (Pb-Free) Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3232TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10597EJ01V0DS (1st edition) Date Published May 2006 NS CP(K) µPC3232TB PIN CONNECTIONS (Top View) 3 43 (Top View) 44 (Bottom View) 3 Pin No. 1 Pin Name OUTPUT GND VCC INPUT GND GND C3S 2 3 4 2 52 55 2 1 61 66 1 5 6 PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. PO (sat) (dBm) +10.0 +11.5 +13.5 +8.5 +12.0 +15.5 Note GP (dB) 15.0 23.0 33.0 23.0 23.0 32.5 Note NF (dB) 6.5 5.0 3.5 6.0 4.5 3.7 Note ICC (mA) 26 25 22 25 19 24.5 15.5 26 Package 6-pin super minimold Marking C1D C1E C1F C2L C3J C3M C3N C3S µPC2708TB µPC2709TB µPC2710TB µPC2776TB µPC3223TB µPC3225TB µPC3226TB µPC3232TB +13.0 +15.5 25.0 32.8 5.3 4.0 Note µPC3225TB is f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10597EJ01V0DS µPC3232TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Operating Ambient Temperature Storage Temperature Input Power Symbol VCC ICC PD TA Tstg Pin TA = +25°C TA = +25°C TA = +25°C TA = +85°C Note Conditions Ratings 6.0 45 270 −40 to +85 −55 to +150 0 Unit V mA mW °C °C dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Operating Ambient Temperature Symbol VCC TA Conditions MIN. 4.5 −40 TYP. 5.0 +25 MAX. 5.5 +85 Unit V °C Data Sheet PU10597EJ01V0DS 3 µPC3232TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain 1 Power Gain 2 Power Gain 3 Power Gain 4 Power Gain 5 Power Gain 6 Gain Flatness K factor 1 K factor 2 Saturated Output Power 1 Saturated Output Power 2 Gain 1 dB Compression Output Power 1 Gain 1 dB Compression Output Power 2 Noise Figure 1 Noise Figure 2 Isolation 1 Isolation 2 Input Return Loss 1 Input Return Loss 2 Output Return Loss 1 Output Return Loss 2 Input 3rd Order Distortion Intercept Point 1 Input 3rd Order Distortion Intercept Point 2 Output 3rd Order Distortion Intercept Point 1 Output 3rd Order Distortion Intercept Point 2 2nd Order Intermodulation Distortion Symbol ICC GP1 GP2 GP3 GP4 GP5 GP6 Test Conditions No input signal f = 0.25 GHz, Pin = −35 dBm f = 1.0 GHz, Pin = −35 dBm f = 1.8 GHz, Pin = −35 dBm f = 2.2 GHz, Pin = −35 dBm f = 2.6 GHz, Pin = −35 dBm f = 3.0 GHz, Pin = −35 dBm f = 1.0 to 2.2 GHz, Pin = −35 dBm f = 1.0 GHz, Pin = −35 dBm f = 2.2 GHz, Pin = −35 dBm f = 1.0 GHz, Pin = 0 dBm f = 2.2 GHz, Pin = −5 dBm f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz, Pin = −35 dBm f = 2.2 GHz, Pin = −35 dBm f = 1.0 GHz, Pin = −35 dBm f = 2.2 GHz, Pin = −35 dBm f = 1.0 GHz, Pin = −35 dBm f = 2.2 GHz, Pin = −35 dBm f1 = 1 000 MHz, f2 = 1 001 MHz f1 = 2 200 MHz, f2 = 2 201 MHz f1 = 1 000 MHz, f2 = 1 001 MHz f1 = 2 200 MHz, f2 = 2 201 MHz f1 = 1 000 MHz, f2 = 1 001 MHz, Pout = −5 dBm/tone 2nd Harmonic 2f0 f0 = 1.0 GHz, Pout = −15 dBm − 70 − dBc MIN. 20 29 30 31 30.5 29 27 − − − +13 +9.5 +8 +6 − − 36 38 9.5 10 12 12 − − − − − TYP. 26 31.5 32.8 33.8 33.5 32.2 30.7 1.0 1.3 1.9 +15.5 +12 +11 +8.5 4 4.1 41 45 13 14.5 15.5 15 −9 −15.5 +23.5 +18 50 MAX. 32 34 35.5 37 36.5 35.5 34 − − − − − − − 4.8 4.9 − − − − − − − − − − − dBc dBm dBm dB dB dB dB dBm dB − − dBm Unit mA dB ∆GP K1 K2 PO (sat) 1 PO (sat) 2 PO (1 dB) 1 PO (1 dB) 2 NF1 NF2 ISL1 ISL2 RLin1 RLin2 RLout1 RLout2 IIP31 IIP32 OIP31 OIP32 IM 2 4 Data Sheet PU10597EJ01V0DS µPC3232TB TEST CIRCUIT C6 Feed-through capacitor 1 000 pF VCC C3 L1 C1 100 pF IN 3 4 1 l1 l2 C2 33 pF 47 nH R1 560 Ω C5 39 pF OUT 1 000 pF L2 68 nH C4 1 000 pF 2, 5, 6 GND Length of microstrip line : l1 = 2.25 mm l2 = 2.75 mm The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type R1 L1 L2 C1 C2 C3, C4 C5 C6 Chip Resistance Chip Inductor Chip Inductor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Feed-through Capacitor Value 560 Ω 47 nH 68 nH 100 pF 33 pF 1 000 pF 39 pF 1 000 pF INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable (Refer to the following page). CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10597EJ01V0DS 5 µPC3232TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 2.25 mm 2.75 mm C2 L1 R1 C1 C3 C4 C5 C6: Feed-through Capacitor COMPONENT LIST Value R1 L1 L2 C1 C2 C3, C4 C5 C6 560 Ω 47 nH 68 nH 100 pF 33 pF 1 000 pF 39 pF 1 000 pF Size Notes 1. 1005 1005 1005 1608 1608 1005 1608 Feed-through Capacitor 19 × 21.46 × 0.51 mm double sided copper clad RO4003C (Rogers) board. Back side: GND pattern Au plated on pattern : Through holes L1, L2: FDK’s products 2. 3. 4. 5. 6 Data Sheet PU10597EJ01V0DS µPC3232TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherw ise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 30 Circuit Current ICC (mA) CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 30 29 Circuit Current ICC (mA) No Input Signal No Input Signal 28 27 26 25 24 23 22 21 25 20 15 10 5 –40˚C TA = +85˚C +25˚C 0 0 1 2 3 4 5 6 20 –50 –25 0 25 50 75 100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) POWER GAIN vs. FREQUENCY 40 40 Power Gain GP (dB) ISOLATION vs. FREQUENCY 1: –40.01 dB 0.25 GHz 2: –41.32 dB 1 GHz 3: –46.39 dB 2.2 GHz 4: –48.59 dB 2.6 GHz VCC = 5.5 V 5.0 V Isolation ISL (dB) 20 35 1 30 2 3 0 4.5 V 4 1: 31.56 dB 0.25 GHz 2: 32.71 dB 1 GHz 3: 33.37 dB 2.2 GHz 4: 32.14 dB 2.6 GHz –20 VCC = 4.5 to 5.5 V 1 25 –40 3 4 –60 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 20 2 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY 20 Input Return Loss RLin (dB) 1: –12.35 dB 0.25 GHz 2: –12.47 dB 1 GHz 3: –13.77 dB 2.2 GHz 4: –14.45 dB 2.6 GHz OUTPUT RETURN LOSS vs. FREQUENCY 20 1: –14.38 dB 0.25 GHz 2: –15.52 dB 1 GHz 3: –14.84 dB 2.2 GHz 4: –16.50 dB 2.6 GHz Output Return Loss RLout (dB) 10 10 0 VCC = 4.5 V 5.0 V 0 VCC = 5.5 V 1 –10 1 2 –10 5.0 V –20 5.5 V 3 4 –20 2 4.5 V 3 4 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Frequency f (GHz) 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 7 µPC3232TB OUTPUT POWER vs. INPUT POWER 20 f = 1.0 GHz 15 OUTPUT POWER vs. INPUT POWER 20 f = 2.2 GHz 15 VCC = 5.5 V Output Power Pout (dBm) VCC = 5.5 V Output Power Pout (dBm) 10 5 0 –5 –10 –15 –20 –50 –40 –30 –20 5.0 V 4.5 V 10 5 5.0 V 4.5 V 0 –5 –10 –15 –10 0 –20 –50 –40 –30 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE vs. FREQUENCY 7.0 6.5 6.0 7.0 6.5 6.0 NOISE FIGURE vs. FREQUENCY TA = +85˚C Noise Figure NF (dB) Noise Figure NF (dB) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5.0 V 5.5 V VCC = 4.5 V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1.0 1.5 +25˚C –40˚C 2.0 2.5 3.0 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 8 Data Sheet PU10597EJ01V0DS µPC3232TB Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 f1 = 1 000 MHz 20 f2 = 1 001 MHz 10 0 –10 –20 –30 –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 –5 IM3 OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 –10 –20 –30 –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 –5 IM3 f1 = 2 200 MHz f2 = 2 201 MHz Pout Pout Input Power Pin (dBm) Input Power Pin (dBm) Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) 20 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER f1 = 1 000 MHz 10 f2 = 1 001 MHz 0 –10 –20 –30 –40 –50 –60 –70 –50 –40 –30 –20 –10 0 10 IM2 Pout IM2 vs. INPUT POWER 60 50 40 30 20 10 0 –50 VCC = 5.5 V f1 = 1 000 MHz f2 = 1 001 MHz 5.0 V 4.5 V –45 –40 –35 –30 –25 –20 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER 20 10 Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER 20 10 Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) f = 1 000 MHz Pout 2f0 f = 2 200 MHz Pout 2f0 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –60 –50 –40 –30 –20 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –60 3f0 3f0 –10 0 –50 –40 –30 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 9 µPC3232TB S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm) S11−FREQUENCY 1 : 81.254 Ω –9.457 Ω 67.317 pF 250 MHz 2 : 46.533 Ω –23.434 Ω 1 GHz 3 : 35.576 Ω 10.355 Ω 2.2 GHz 4 : 45.572 Ω 17.93 Ω 2.6 GHz 4 3 1 2 START : 100.000 000 MHz STOP : 3 100.000 000 MHz S22−FREQUENCY 1 : 44.955 Ω 17.123 Ω 10.901 nH 250 MHz 2 : 48.875 Ω –16.785 Ω 1 GHz 3 : 51.383 Ω 18.615 Ω 2.2 GHz 4 : 66.562 Ω 5.5 Ω 2.6 GHz 1 3 4 2 START : 100.000 000 MHz STOP : 3 100.000 000 MHz 10 Data Sheet PU10597EJ01V0DS µPC3232TB S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet PU10597EJ01V0DS 11 µPC3232TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 12 Data Sheet PU10597EJ01V0DS 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 µPC3232TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10597EJ01V0DS 13 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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