UPC8211TK-EV09-A

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. The package is 6-pin lead-less minimold, suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low noise : NF = 1.3 dB TYP. @ VCC = 3.0 V • High gain : GP = 18.5 dB TYP. @ VCC = 3.0 V • Low current consumption : ICC = 3.5 mA TYP. @ VCC = 3.0 V • Gain 1 dB compression output power : Po (1 dB) = −6.0 dBm @ VCC = 3.0 V • Built-in power-save function • High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) APPLICATION • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number µPC8211TK-E2 Order Number µPC8211TK-E2-A Package Marking 6-pin lead-less minimold (1511 PKG) (Pb-Free) 6G Supplying Form • Embossed tape 8 mm wide Note • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8211TK Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10426EJ04V0DS (4th edition) Date Published January 2006 CP(K) Printed in Japan The mark  shows major revised points.  NEC Compound Semiconductor Devices, Ltd. 2003, 2006 µPC8211TK PIN CONNECTIONS (Top View) 2 6G 1 3 6 6 1 5 5 2 4 4 3 INTERNAL BLOCK DIAGRAM INPUT 1 6 VCC GND 2 5 GND 4 OUTPUT Bias PS 2 Pin No. Pin Name 1 INPUT 2 GND 3 PS 4 OUTPUT 5 GND 6 VCC (Bottom View) 3 Data Sheet PU10426EJ04V0DS µPC8211TK ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions TA = +25°C Ratings Unit 4.0 V −0.3 to VCC +0.3 V 232 mW Supply Voltage VCC Power-Saving Voltage VPS Power Dissipation of Package PD Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm TA = +85°C Note Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA −25 +25 +85 °C Operating Frequency Range fin − 1 575 − MHz Data Sheet PU10426EJ04V0DS 3 µPC8211TK ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Symbol Circuit Current ICC Test Conditions No Signal At Power-Saving Mode MIN. TYP. MAX. Unit 2.5 3.5 4.5 mA − − 1 µA Power Gain GP 15.5 18.5 21.5 dB Noise Figure NF − 1.3 1.5 dB Input 3rd Order Distortion Intercept IIP3 − −12 − dBm Input Return Loss RLin 6.0 7.5 − dB Output Return Loss RLout 10 14.5 − dB ISL − 33.5 − dB VPSon 2.2 − − V Falling Voltage From Power-Saving Mode VPSoff − − 0.8 V Gain Flatness Flat − − 0.5 dB − −6.0 − dBm −1.5 +2.0 − dBm Point Isolation Rising Voltage From Power-Saving Mode Gain 1 dB Compression Output fRF = ± 2.5 MHz PO (1 dB) Power Output Power PO Pin = −10 dBm TEST CIRCUIT C3 33 pF L1 C4 4.7 nH 0.1µF IN 1 6 2 5 3 4 VCC 1.3 pF C2 R1 750 Ω L2 22 nH VPS High : ON Low : OFF (Power-Save) C1 C5 82 pF OUT 8.2 nH L3 0.1µF COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Symbol Form Rating Part Number Maker C1, C4 Chip Capacitor 0.1 µF GRM36 Murata C2 Chip Capacitor 1.3 pF GRM36 Murata C3 Chip Capacitor 33 pF GRM36 Murata C5 Chip Capacitor 82 pF GRM36 Murata R1 Resistor 750 Ω RR0816 Susumu L1 Inductor 4.7 nH TFL0510 Susumu L2 Inductor 22 nH TFL0816 or TFL0510 Susumu L3 Inductor 8.2 nH TFL0510 Susumu 4 Data Sheet PU10426EJ04V0DS µPC8211TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VCC 0.1 µ F 6 750 Ω 22 nH 5 33 pF 4 82 pF 4.7 nH IN 8.2 nH 1 2 3 1.3 pF OUT 0.1 µ F PS Notes 1. 30 × 30 × 0.51 mm double-side copper-clad hydrocarbon ceramic woven glass PWB (Rogers: R04003, εr = 3.38). 2. Back side: GND pattern 3. Au plated on pattern 4. 5. represents cutout : Through holes Data Sheet PU10426EJ04V0DS 5 µPC8211TK TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) NOISE FIGURE vs. FREQUENCY VOLTAGE GAIN vs. FREQUENCY 2.0 24 VCC = VPS = 3.0 V VCC = VPS = 3.0 V Voltage Gain Gain (dB) 22 Noise Figure NF (dB) 1.8 TA = –40˚C 20 TA = +25˚C 18 TA = +85˚C 1.6 1.4 TA = +85˚C 1.2 TA = +25˚C 1.0 0.8 16 TA = –40˚C 0.6 14 1.5 1.55 OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 5 TA = 25˚C –5 f1 = 1 575.5 MHz f2 = 1 576.5 MHz 10 Pout –30 TA = –25˚C –15 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 30 –10 –50 VCC = 3.0 V f = 1 575 MHz 0 1 2 3 4 –90 –50 VCC = VPS = 3.0 V TA = 25˚C –40 –30 –20 –10 Power-Save Pin Applied Voltage VPS (V) Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 30 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout –10 0 30 10 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout –10 –30 –30 IM3 –50 –50 –70 –90 –50 IM3 –70 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Voltage Gain Gain (dB) TA = 85˚C Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) VOLTAGE GAIN vs. POWER-SAVE PIN APPLIED VOLTAGE –25 IM3 –70 VCC = VPS = 3.0 V TA = –40˚C –40 –30 –20 –10 0 –90 –50 Input Power Pin (dBm) VCC = VPS = 3.0 V TA = 85˚C –40 –30 –20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 1.6 Frequency f (GHz) 15 10 1.55 Frequency f (GHz) 25 –35 0.4 1.5 1.6 Data Sheet PU10426EJ04V0DS –10 0 µPC8211TK S-PARAMETERS (TA = +25°C, VCC = VPS = 3.0 V, monitored at connector on board) S11-FREQUENCY S22-FREQUENCY 1 1 1; 57.094 Ω 51.530 Ω 5.2072 nH 1.575 000 000 GHz STOP 2 000.000 000 MHz START 100.000 000 MHz START 100.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) 0 –2 –4 –6 –8 –10 –12 0.1 1; 31.739 Ω 3.4192 Ω 29.554 pF 1.575 000 000 GHz STOP 2 000.000 000 MHz 1.575 GHz 1.0 –5 –10 –15 1.575 GHz –20 –25 0.1 10 1.0 Frequency f (GHz) 10 Frequency f (GHz) POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY 25 0 20 –10 Isolation ISL (dB) Power Gain Gain (dB) –5 15 10 5 1.575 GHz 1.575 GHz –15 –20 –25 –30 –35 –40 –45 0 0.1 1.0 10 –50 0.1 Frequency f (GHz) 1.0 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10426EJ04V0DS 7 µPC8211TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) (Bottom View) 0.16±0.05 1.5±0.1 0.48±0.05 0.48±0.05 (Top View) 1.1±0.1 0.2±0.1 0.11+0.1 –0.05 0.55±0.03 1.3±0.05 Remark ( ) : Reference value 8 Data Sheet PU10426EJ04V0DS 0.9±0.1 µPC8211TK NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating : 1 time : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10426EJ04V0DS 9 µPC8211TK When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of January, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PU10426EJ04V0DS µPC8211TK For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504