UPC8215TU

BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8215TU is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. The package is 8-pin lead-less minimold suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low noise • High gain • Low distortion : NF = 1.3 dB TYP. @ VCC = 3.0 V : GP = 27.0 dB TYP. @ VCC = 3.0 V : OIP3 = +12.5 dBm TYP. @ VCC = 3.0 V • High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.2 × 0.5 mm) • High performance with minimum external components • Output matched to 50 Ω APPLICATION • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number Order Number Package 8-pin lead-less minimold (Pb-Free) Note Marking 8215 Supplying Form • 8 mm wide embossed taping • Pin 5, 6, 7, 8 indicates pull-out direction of tape • Qty 5 kpcs/reel µPC8215TU-E2 µPC8215TU-E2-A Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8215TU Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10546EJ01V0DS (1st edition) Date Published June 2005 CP(K) µPC8215TU PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM GND 1 8 GND INPUT 2 7 OUTPUT GND 3 6 GND GND 4 5 VCC ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Power Dissipation of Package Operating Ambient Temperature Storage Temperature Input Power Symbol VCC PD TA Tstg Pin TA = +25°C TA = +85°C Note Test Conditions Ratings 4.0 1.06 −40 to +85 −55 to +150 +10 Unit V W °C °C dBm Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Operating Ambient Temperature Operating Frequency Range Symbol VCC TA fin MIN. 2.7 − 25 − TYP. 3.0 +25 1 575 MAX. 3.3 +85 − Unit V °C MHz ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Circuit Current Power Gain Noise Figure Output 3rd Order Distortion Intercept Point Input Return Loss Output Return Loss Isolation Gain 1 dB Compression Output Power RLin RLout ISL PO (1 dB) 6.0 10 30 − 7.0 14.0 40.0 +5.0 − − − − dB dB dB dBm Symbol ICC GP NF OIP3 No Signal Test Conditions MIN. − 24.0 − − TYP. 10.0 27.0 1.3 +12.5 MAX. 13.0 30.0 1.5 − Unit mA dB dB dBm 2 Data Sheet PU10546EJ01V0DS µPC8215TU TEST CIRCUIT 1 8 INPUT 2 7 100 pF OUTPUT 2.4 nH 12 nH 100 pF 3 6 4 5 VCC 100 pF 0.1 µF Notes 1. 2. High performance with minimum external components. Output matched to 50 Ω. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 12 nH 1 2 3 4 8 7 6 5 INPUT 2.4 nH 100 pF 100 pF 100 pF OUTPUT 0.1µF Notes 1. 2. 3. 4. 5. 6. 30 × 30 × 0.51 mm double sided copper-clad hydrocarbon ceramic woven glass PWB (Rogers : R04003, εr = 3.38). Au plated on pattern 12 nH/2.4 nH : Murata LQP15M 100 pF/0.1 µF : Murata GRM15 represents cutout : Through holes Data Sheet PU10546EJ01V0DS 3 µPC8215TU TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, unless otherwise specified) INPUT RETURN LOSS vs. FREQUENCY 0 –1 Input Return Loss RLin (dB) ISOLATION vs. FREQUENCY 0 –10 Isolation ISL (dB) –2 –3 –4 –5 –6 –7 –8 –9 0.1 1.575 GHz –60 10 –70 0.1 –20 –30 –40 –50 1.575 GHz 1.0 Frequency f (GHz) 1.0 Frequency f (GHz) 10 POWER GAIN vs. FREQUENCY 50 Output Return Loss RLout (dB) OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 –15 –20 –25 –30 0.1 1.575 GHz 45 40 Power Gain GP (dB) 35 30 25 20 15 10 5 0 0.1 1.0 Frequency f (GHz) 10 1.575 GHz 1.0 Frequency f (GHz) 10 OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +20 fin1 = 1 575 MHz +10 fin2 = 1 576 MHz 0 –10 –20 –30 –40 –50 –60 –70 –80 –60 –50 –40 Pout IM3 –30 –20 –10 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10546EJ01V0DS µPC8215TU S-PARAMETERS (TA = +25°C, VCC = 3.0 V, monitored at connector on board) S11−FREQUENCY START : 600.000 000 MHz STOP : 2 000.000 000 MHz 1 1 : 1 575 MHz 27.684 Ω 29.132 Ω 2.9438 nH S22−FREQUENCY START : 600.000 000 MHz STOP : 2 000.000 000 MHz 1 1 : 1 575 MHz 57.880 Ω –12.447 Ω 8.1185 pF Data Sheet PU10546EJ01V0DS 5 µPC8215TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View) (Bottom View) (0.65) (0.65) (0.6) (0.3) 0.4±0.1 (0.35) (0.35) 2.0±0.1 8 7 6 5 5 6 7 8 (0.6) (0.5) (0.5) (0.35)(0.35) 2.2±0.05 2.0±0.1 (0.6) 1 2 3 4 (0.25) (0.25) 0.125+0.1 –0.05 0.16±0.05 (0.75) (0.75) 4 3 2 1 Remark ( ) : Reference value 6 0.5±0.03 Data Sheet PU10546EJ01V0DS 0.4±0.1 (1.4) µPC8215TU NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10546EJ01V0DS 7 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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