DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8230TU
SiGe:C LOW NOISE AMPLIFIER FOR GPS
DESCRIPTION
The PC8230TU is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise PC8230TU which is included output matching circuit contributes to amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the sensitivity of GPS receiver. In addition, the reduce external components and system size. The package is 8-pin lead-less minimold suitable for surface mount. This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
FEATURES
• Low noise • High gain • Low current consumption • Built-in power-saving function • High-density surface mounting : 8-pin lead-less minimold package (2.0 • Included output matching circuit • Included very robust bandgap regulator (Small VCC and TA dependence) • Included protection circuits for ESD 2.0 0.5 mm) : NF = 0.85 dB TYP. @ fin = 1 575 MHz : GP = 18.5 dB TYP. @ fin = 1 575 MHz : ICC = 6.0 mA TYP. @ VCC = 3.0 V
APPLICATION
• Low noise amplifier for GPS
ORDERING INFORMATION
Part Number PC8230TU-E2 Order Number PC8230TU-E2-A Package 8-pin lead-less minimold (Pb-Free) Marking 8230 Supplying Form 8 mm wide embossed taping Pin 5, 6, 7, 8 indicates pull-out direction of tape Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC8230TU
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Document No. PU10612EJ01V0DS (1st edition) Date Published April 2006 NS CP(N)
PC8230TU
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1 8
Pin No. 1 2 3 4 Pin Name VCC N.C. GND INPUT Power Save GND OUTPUT VCC
2
7
3
Bias
6
5 6
4
5
7 8
ABSOLUTE MAXIMUM RATINGS
P a ra m et er Supply Vol tage Power-Saving Voltage Power Dissipatio n Operating Ambient Temperature Storage Temperature Input Power S ym bo l VCC VPS PD TA Tstg Pin TA = +25 C TA = +25 C TA = +85°C Note T e s t C on di ti on s R a ti ng s 4.0 4.0 295 40 to +85 55 to +150 +10 U n it V V mW C C dBm
Note Mounted on double-side copper-clad 50
50
1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Supply Vol tage Operating Ambient Temperature Power Save Turn-on Voltage Power Save Turn-off Voltage Symbol VCC TA VPSon VPSoff MIN. 2.7 40 2.2 0 TYP. 3.0 +25 MAX. 3.3 +85 VCC 0.8 Unit V C V V
2
Data Sheet PU10612EJ01V0DS
PC8230TU
ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified)
Parameter Circuit Current Symbol ICC Test Conditions No Signal (VPS = 3.0 V) At Power-Saving Mode (VPS = 0 V) Power Gain Noise Figure Input 3rd Order Distortion Intercept Point Input Retu rn Lo ss Output Return Loss Isolation Gain 1 dB Compression Input Power RLin RLout ISL Pin (1 dB) 8 7 11 10 39 17 dB dB dB dBm GP NF IIP3 fin1 = 1 574 MHz, fin2 = 1 575 MHz Pin = 35 dBm 16 18 .5 0.85 5 MIN. 4.5 TYP. 6.0 MAX. 8.0 1 21 1.15 Unit mA A dB dB dBm
TEST CIRCUIT
VCC
1 0.1 F
8
2
7 1 pF
OUTPUT
3
6
INPUT 100 pF 4.7 nH
4
5
VPS
0.1 F
Data Sheet PU10612EJ01V0DS
3
PC8230TU
TYPICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified)
CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE
10 9
Circuit Current ICC (mA)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
10 9
Circuit Current ICC (mA)
8 7 6 5 4 3 2 1 0 2.0 2.5 3.0 VCC = VPS RF = off 3.5 4.0 –40 C +25 C TA = +85 C
8 7 6 5 4 3 2 1 0 0 0.5
TA = +85 C
+25 C –40 C VCC = 3 V RF = off 1.0 1.5 2.0 2.5 3.0
Supply Voltage VCC (V)
Power-Saving Voltage VPS (V)
POWER GAIN vs. FREQUENCY
24 TA = –40 C
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
1.6 1.4 TA = +85 C
22
Power Gain GP (dB)
1.2 1.0 0.8 0.6 0.4 0.2 –40 C VCC = VPS = 3 V 1 525 1 550 1 575 1 600 +25 C
20
18 +25 C 16 +85 C VCC = VPS = 3 V 1 525 1 550 1 575 1 600
14 1 500
0 1 500
Frequency fin (MHz)
Frequency fin (MHz)
POWER GAIN vs. OPERATING AMBIENT TEMPERATURE
24 1.6 1.4
Noise Figure NF (dB)
NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE
22
Power Gain GP (dB)
1.2 1.0 0.8 0.6 0.4 0.2 0 –50 –25 0 25 VCC = VPS = 3 V fin = 1 575 MHz 50 75 100
20
18
16 VCC = VPS = 3 V fin = 1 575 MHz 14 –50 –25 0 25 50 75 100
Operating Ambient Temperature TA ( C)
Operating Ambient Temperature TA ( C)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10612EJ01V0DS
PC8230TU
POWER GAIN vs. SUPPLY VOLTAGE
24
NOISE FIGURE vs. SUPPLY VOLTAGE
1.6 1.4 TA = +85 C
22
Noise Figure NF (dB)
TA = –40 C
Power Gain GP (dB)
1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 2.6 –40 C VCC = VPS fin = 1 575 MHz 3.2 3.4 3.6 +25 C
20
18 +25 C 16 +85 C 14 2.4 2.6 2.8 3.0 VCC = VPS fin = 1 575 MHz 3.2 3.4 3.6
2.8
3.0
Supply Voltage VCC (V)
Supply Voltage VCC (V)
OUTPUT POWER vs. INPUT POWER
10 VCC = VPS = 3 V fin = 1 575 MHz TA = +25 C 10
OUTPUT POWER vs. INPUT POWER
VCC = VPS = 3 V fin = 1 575 MHz TA = –40 C
Output Power Pout (dBm)
0
Output Power Pout (dBm)
0
–10
–10
–20 Pin (1dB) = –17.4 dBm –30 –50 –40 –30 –20 –10
–20 Pin (1dB) = –19.1 dBm –30 –50 –40 –30 –20 –10
Input Power Pin (dBm)
Input Power Pin (dBm)
10 VCC = VPS = 3 V fin = 1 575 MHz TA = +85 C
Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER, IM3 vs. INPUT POWER
+20 VCC = VPS = 3 V fin1 = 1 574 MHz 0 fin2 = 1 575 MHz Pout
Output Power Pout (dBm)
0
–20 –40 IM3 –60 –80 IIP3 = –4.5 dBm –100 –40 –30 –20 –10 0
–10
–20 Pin (1dB) = –16.3 dBm –30 –50 –40 –30 –20 –10
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10612EJ01V0DS
5
PC8230TU
S-PARAMETERS (TA = +25 C, VCC = VPS = 3.0 V, monitored at connector on board)
S11–FREQUENCY
1:1 575 MHz 34.06 11.57
S22–FREQUENCY
1:1 575 MHz 50.16 –28.16
1
1
START 100.000 000 MHz
STOP 4 000.000 000 MHz
START 100.000 000 MHz
STOP 4 000.000 000 MHz
INPUT RETURN LOSS vs. FREQUENCY
0
Output Return Loss RLout (dB) Input Return Loss RLin (dB)
OUTPUT RETURN LOSS vs. FREQUENCY
0 –5 –10 –15 –20 –25 –30
–5 –10 –15 –20 –25 –30
0
500
1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz)
0
500
1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz)
POWER GAIN vs. FREQUENCY
30 25
Power Gain GP (dB) Isolation ISL (dB)
ISOLATION vs. FREQUENCY
0 –10 –20 –30 –40 –50 –60
20 15 10 5 0
0
500
1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz)
0
500
1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10612EJ01V0DS
PC8230TU
PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm)
(Top View) (Bottom View)
(0.65) (0.65) 2.0±0.1 (0.6) (0.3)
(0.6)
(0.5) (0.5)
(0.35) (0.35)
(0.25) (0.25) (0.75) (0.75)
(0.35)(0.35)
2.2±0.05
2.0±0.1
8230
(0.6)
1
2
3
4
0.16±0.05
0.125+0.1 –0.05
4
3
2
1
Remark ( ) : Reference value
0.5±0.03
0.4±0.1
(1.4)
0.4±0.1
8
7
6
5
5
6
7
8
Data Sheet PU10612EJ01V0DS
7
PC8230TU
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) Do not supply DC voltage to INPUT pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Metho d Infrared Reflow S o l d e r i n g C ond itions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220 C or higher Preheating time at 120 to 180 C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260 C or below : 10 seconds or less : 60 seconds or less : 120 30 seconds : 3 times : 0.2%(Wt.) or below : 260 C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 C ondi ti on Sy mbo l IR260
For soldering
Preheating temperature (package surface temperature) : 120 C or below
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet PU10612EJ01V0DS
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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