UPC8231TK

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain characteristics. This device is enabled in the frequency range from 1.5 to 2.4 GHz by modifying the external matching circuit. The package is 6-pin lead-less minimold, suitable for surface mount. This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process. FEATURES • Low noise • High gain • Low current consumption • Built-in power-saving function • High-density surface mounting • Included protection circuits for ESD : 6-pin lead-less minimold package (1.5 1.1 0.55 mm) • Included very robust bandgap regulator (Small VCC and TA dependence) : NF = 0.8 dB TYP. @ fin = 1 575 MHz : GP = 20 dB TYP. @ fin = 1 575 MHz : ICC = 3.8 mA TYP. @ VCC = 3.0 V APPLICATION • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number PC8231TK-E2 Order Number PC8231TK-E2-A Package 6-pin lead-less minimold (1511 PKG) (Pb-Free) Marking 6K Supplying Form • 8 mm wide embossed taping • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC8231TK Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10613EJ01V0DS (1st edition) Date Published April 2006 NS CP(N) PC8231TK PIN CONNECTIONS Pin No. Pin Name INPUT GND Power Save OUTPUT GND VCC (Top View) (Bottom View) 6 5 4 6 5 4 1 2 3 1 2 3 4 6K INPUT GND Power Save 1 2 3 5 6 INTERNAL BLOCK DIAGRAM 1 6 VCC 2 5 GND Bias 3 4 OUTPUT 2 Data Sheet PU10613EJ01V0DS PC8231TK ABSOLUTE MAXIMUM RATINGS P a ra m et er Supply Vol tage Power-Saving Voltage Power Dissipatio n Operating Ambient Temperature Storage Temperature Input Power S y m b ol VCC VPS PD TA Tstg Pin T es t C on di t i o ns TA = +25 C TA = +25 C TA = +85°C Note Ratings 4.0 4.0 232 40 to +85 55 to +150 +10 U ni t V V mW C C dBm Note Mounted on double-side copper-clad 50 50 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Vol tage Operating Ambient Temperature Power Save Turn-on Voltage Power Save Turn-off Voltage Symbol VCC TA VPSon VPSoff MIN. 2.7 40 1.6 0 TYP. 3.0 +25 MAX. 3.3 +85 VCC 0.4 Unit V C V V Data Sheet PU10613EJ01V0DS 3 PC8231TK ELECTRICAL CHARACTERISTICS (TA = +25 C, VCC = VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Circuit Current Symbol ICC Test Conditions No Signal (VPS = 3.0 V) At Power-Saving Mode (VPS = 0 V) Power Gain Noise Figure Input 3rd Order Distortion Intercept Point Input Retu rn Lo ss Output Return Loss Isolation Gain 1 dB Compression Input Power RLin RLout ISL Pin (1 dB) 7 10 10 18 35 22 dB dB dB dBm GP NF IIP3 fin1 = 1 574 MHz, fin2 = 1 575 MHz Pin = 35 dBm 17 .5 20 0.8 10 MIN. 2.8 TYP. 3.8 MAX. 5.1 1 22 .5 1.1 Unit mA A dB dB dBm TEST CIRCUIT 1 000 pF 100 pF INPUT 1 4.7 nH 2 6 VCC 5 18 nH 470 100 pF VPS 0.1 F 3 4 8.2 nH OUTPUT 4 Data Sheet PU10613EJ01V0DS PC8231TK TYPICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 6 5 Circuit Current ICC (mA) Circuit Current ICC (mA) CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE 6 5 TA = +85 C 4 3 –40 C 2 1 0 2.0 VCC = VPS RF = off 2.5 3.0 3.5 4.0 +25 C TA = +85 C 4 3 2 1 0 0 +25 C –40 C VCC = 3 V RF = off 0.5 1.0 1.5 2.0 2.5 3.0 Supply Voltage VCC (V) Power-Saving Voltage VPS (V) POWER GAIN vs. FREQUENCY 24 TA = –40 C Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 –40 C VCC = VPS = 3 V 1 525 1 550 1 575 1 600 +25 C TA = +85 C 22 Power Gain GP (dB) 20 +25 C +85 C 16 VCC = VPS = 3 V 1 525 1 550 1 575 1 600 18 14 1 500 0 1 500 Frequency fin (MHz) Frequency fin (MHz) POWER GAIN vs. OPERATING AMBIENT TEMPERATURE 24 1.6 1.4 Noise Figure NF (dB) NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 22 Power Gain GP (dB) 1.2 1.0 0.8 0.6 0.4 0.2 0 –50 –25 0 25 VCC = VPS = 3 V fin = 1 575 MHz 50 75 100 20 18 16 VCC = VPS = 3 V fin = 1 575 MHz 14 –50 –25 0 25 50 75 100 Operating Ambient Temperature TA ( C) Operating Ambient Temperature TA ( C) Remark The graphs indicate nominal characteristics. Data Sheet PU10613EJ01V0DS 5 PC8231TK POWER GAIN vs. SUPPLY VOLTAGE 24 TA = –40 C Noise Figure NF (dB) NOISE FIGURE vs. SUPPLY VOLTAGE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 2.6 –40 C 2.8 3.0 VCC = VPS fin = 1 575 MHz 3.2 3.4 3.6 +25 C TA = +85 C 22 Power Gain GP (dB) 20 +25 C +85 C 16 VCC = VPS fin = 1 575 MHz 14 2.4 2.6 2.8 3.0 3.2 3.4 3.6 18 Supply Voltage VCC (V) Supply Voltage VCC (V) OUTPUT POWER vs. INPUT POWER 10 VCC = VPS = 3 V fin = 1 575 MHz TA = +25 C 10 OUTPUT POWER vs. INPUT POWER VCC = VPS = 3 V fin = 1 575 MHz TA = –40 C Output Power Pout (dBm) 0 Output Power Pout (dBm) 0 –10 –10 –20 Pin (1dB) = –21.8 dBm –30 –50 –40 –30 –20 –10 –20 Pin (1dB) = –23.2 dBm –30 –50 –40 –30 –20 –10 Input Power Pin (dBm) Input Power Pin (dBm) 10 VCC = VPS = 3 V fin = 1 575 MHz TA = +85 C Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER +20 VCC = VPS = 3 V fin1 = 1 574 MHz 0 fin2 = 1 575 MHz Pout Output Power Pout (dBm) 0 –20 –40 IM3 –60 –80 IIP3 = –10.6 dBm –100 –40 –30 –20 –10 0 –10 –20 Pin (1dB) = –20.9 dBm –30 –50 –40 –30 –20 –10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10613EJ01V0DS PC8231TK S-PARAMETERS (TA = +25 C, VCC = VPS = 3.0 V, monitored at connector on board) S11–FREQUENCY 1:1 575 MHz 25.41 –2.24 S22–FREQUENCY 1:1 575 MHz 43.82 8.98 1 1 START 100.000 000 MHz STOP 4 000.000 000 MHz START 100.000 000 MHz STOP 4 000.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 –5 –10 –10 –15 –15 –20 –20 –25 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) –25 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) POWER GAIN vs. FREQUENCY 25 0 –10 Isolation ISL (dB) ISOLATION vs. FREQUENCY 20 Power Gain GP (dB) –20 –30 –40 –50 –60 15 10 5 0 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) 0 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 Frequency f (MHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10613EJ01V0DS 7 PC8231TK APPLIED CIRCUIT EXAMPLE C4 C1 INPUT L1 1 6 VCC C2 2 5 L2 R1 VPS C5 3 4 L3 C3 OUTPUT EXTERNAL PARTS CHART Value Symbol L1 L2 L3 C1 C2 C3 C4 C5 R1 Parts 1.575 GHz Band Chip Inductor Chip Inductor Chip Inductor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitor Chip Resistor 5.6 18 10 120 1.3 120 1 000 1 000 470 1.9 GHz Band 3.9 12 8.2 5.0 0.7 5.0 1 000 1 000 470 2.14 GHz Band 3.3 8.2 6.8 2.0 0.5 5.0 1 000 1 000 470 2.4 GHz Band 2.7 6.8 5.6 2.0 0.3 5.0 1 000 1 000 470 nH nH nH pF pF pF pF pF Unit TYPICAL CHARACTERISTICS (TA = +25 C, VCC = VPS = 3.0 V, unless otherwise specified) Reference Value Parameter Power Gain Noise Figu re Input Return Loss Output Return Loss Symbol 1.575 GHz GP NF RLin RLout 20.0 0. 7 8 10.4 21.0 1.9 GHz 19.0 0. 9 5 10.2 30.0 2.14 GHz 18.0 1 .1 0 10.2 32.2 2.4 GHz 17.0 1 .2 7 10.5 23.0 dB dB dB dB Unit 8 Data Sheet PU10613EJ01V0DS PC8231TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) (Top View) (Bottom View) 0.48±0.05 0.48±0.05 1.5±0.1 1.1±0.1 1.3±0.05 0.2±0.1 0.16±0.05 0.9±0.1 0.55±0.03 0.11+0.1 –0.05 Data Sheet PU10613EJ01V0DS 9 PC8231TK NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) Do not supply DC voltage to INPUT pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Metho d Infrared Reflow S o l d e r i n g C ond itions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220 C or higher Preheating time at 120 to 180 C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260 C or below : 10 seconds or less : 60 seconds or less : 120 30 seconds : 3 times : 0.2%(Wt.) or below : 260 C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 C ondi ti on Sy mbo l IR260 For soldering Preheating temperature (package surface temperature) : 120 C or below Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PU10613EJ01V0DS 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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