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Preliminary
μPG2214TB
GaAs Integrated Circuit for L, S-Band SPDT Switch
Data Sheet
R09DS0050EJ0400
Rev.4.00
Sep 10, 2012
DESCRIPTION
The μPG2214TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for
mobile phone and another L, S-band application.
This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting.
FEATURES
• Switch control voltage
•
•
•
•
: Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
Low insertion loss
: Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins4 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
High isolation
: ISL1 = 32 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL5 = 24 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
Handling power
: Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Pin (1 dB) = +20.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
TM
• W-LAN, WLL and Bluetooth etc.
ORDERING INFORMATION
Part Number
μPG2214TB-E4
Package
Marking
6-pin super minimold (2012)
(Pb-Free)
G4J
Supplying Form
• Embossed tape 8 mm wide
• Pin 4, 5, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: μPG2214TB-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 1 of 12
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μPG2214TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
G4J
1
(Top View)
2
3
(Bottom View)
6 1
6 6
1
5 2
5 5
2
4 3
4 4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont2
5
INPUT
6
Vcont1
TRUTH TABLE
Vcont1
Vcont2
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
High
ON
OFF
High
Low
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Symbol
Ratings
Vcont
+6.0
Unit
Note
V
Input Power
Pin
+30
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note
Vcont1 − Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Switch Control Voltage (H)
Vcont (H)
1.8
3.0
5.3
V
Switch Control Voltage (L)
Vcont (L)
−0.2
0
0.2
V
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 2 of 12
A Business Partner of Renesas Electronics Corporation.
μPG2214TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.45
dB
Insertion Loss 1
Lins1
f = 0.05 to 0.5 GHz
Insertion Loss 2
Lins2
f = 0.5 to 1.0 GHz
−
0.25
0.45
dB
Insertion Loss 3
Lins3
f = 1.0 to 2.0 GHz
−
0.30
0.50
dB
Insertion Loss 4
Lins4
f = 2.0 to 2.5 GHz
−
0.35
0.55
dB
Insertion Loss 5
Lins5
f = 2.5 to 3.0 GHz
−
0.35
0.60
dB
29
32
−
dB
Note 1
Isolation 1
ISL1
f = 0.05 to 0.5 GHz
Isolation 2
ISL2
f = 0.5 to 1.0 GHz
25
28
−
dB
Isolation 3
ISL3
f = 1.0 to 2.0 GHz
24
27
−
dB
Isolation 4
ISL4
f = 2.0 to 2.5 GHz
23
26
−
dB
Isolation 5
ISL5
f = 2.5 to 3.0 GHz
21
24
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
+21.0
+ 23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+27.0
−
dBm
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 0.5 to 3.0 GHz, 2 tone,
−
+58
−
dBm
−
4
20
μA
−
20
200
ns
Input Return Loss 1
RLin1
f = 0.05 to 0.5 GHz
Input Return Loss 2
RLin2
f = 0.5 to 3.0 GHz
Output Return Loss 1
RLout1
f = 0.05 to 0.5 GHz
Output Return Loss 2
RLout2
f = 0.5 to 3.0 GHz
0.1 dB Loss Compression
Input Power
1 dB Loss Compression
Input Power
Pin (0.1 dB)
Note 2
Note 3
2nd Harmonics
3rd Harmonics
Pin (1 dB)
2f0
3f0
Intermodulation Intercept Point
IIP3
Switch Control Current
Icont
Switch Control Speed
tSW
Note 1
Note 1
f = 2.0/2.5 GHz
Pin = +16 dBm, 5 MHz spicing
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
μPG2214TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.50
dB
Insertion Loss 6
Lins6
f = 0.05 to 0.5 GHz
Insertion Loss 7
Lins7
f = 0.5 to 1.0 GHz
−
0.25
0.50
dB
Insertion Loss 8
Lins8
f = 1.0 to 2.0 GHz
−
0.30
0.55
dB
Insertion Loss 9
Lins9
f = 2.0 to 2.5 GHz
−
0.35
0.60
dB
Insertion Loss 10
Lins10
f = 2.5 to 3.0 GHz
−
0.35
0.65
dB
27
30
−
dB
Note 1
Isolation 6
ISL6
f = 0.05 to 0.5 GHz
Isolation 7
ISL7
f = 0.5 to 2.0 GHz
23
27
−
dB
Isolation 8
ISL8
f = 2.0 to 2.5 GHz
21
25
−
dB
Isolation 9
ISL9
f = 2.5 to 3.0 GHz
Input Return Loss 3
Output Return Loss 3
0.1 dB Loss Compression
Input Power
RLin3
RLout3
Pin (0.1 dB)
Note 2
1 dB Loss Compression
Pin (1 dB)
Switch Control Current
Icont
Switch Control Speed
tSW
Input Power
Note 3
20
24
−
dB
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
+14.0
+ 17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+20.0
−
dBm
−
4
20
μA
−
20
200
ns
f = 2.0/2.5 GHz
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 4 of 12
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μPG2214TB
EVALUATION CIRCUIT
OUTPUT1
OUTPUT2
C0 Note
C0
3
4
2
5
1
6
C0
1 000 pF
Vcont2
INPUT
1 000 pF
Vcont1
Note C0 : 0.05 to 0.5 GHz 1 000 pF
: 0.5 to 3.0 GHz 100 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 5 of 12
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μPG2214TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont2
6pin SMM SPDT SW
Vc2
OUTPUT2
C2
C
2
4
OUT 2
C
C1
INPUT
C1
IN
G4J
C3
C1
C
C
5
C2
1
OUT 1
OUTPUT1
Vc1
Vcont1
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
100 pF
1 000 pF
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 6 of 12
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μPG2214TB
TYPICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
1: –0.533 dB
1.0 GHz
2: –0.674 dB
1.5 GHz
3: –0.830 dB
2.0 GHz
4: –0.939 dB
2.5 GHz
5: –1.142 dB
3.0 GHz
Insertion Loss Lins (dB)
4
3
2
1
0
1
–1
2
–2
3
4
5
–3
–4
–5
0.5
5
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
1: –0.533 dB
1.0 GHz
2: –0.688 dB
1.5 GHz
3: –0.860 dB
2.0 GHz
4: –0.949 dB
2.5 GHz
5: –1.152 dB
3.0 GHz
4
Insertion Loss Lins (dB)
5
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
3
2
1
0
1
–1
–2
2
3
4
5
1.5
2.0
2.5
3.0
–3
–4
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
–5
0.5
1.0
3.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Caution These characteristics values include the losses of the NEC evaluation board.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 7 of 12
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μPG2214TB
50
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
1: –28.87 dB
1.0 GHz
2: –27.81 dB
1.5 GHz
3: –27.54 dB
2.0 GHz
4: –26.74 dB
2.5 GHz
5: –25.04 dB
3.0 GHz
40
Isolation ISL (dB)
30
20
10
0
–10
–20
–30
1
2
3
4
5
50
10
0
–10
–20
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
–40
1.0
1.5
2.0
2.5
3.0
–50
0.5
3.5
3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
30
20
10
0
–10
–20
1
2
–30
3
4
–40
–50
0.5
1.0
1.5
2.0
2.5
5
3.0
50
1: –29.277 dB
1.0 GHz
2: –22.261 dB
1.5 GHz
3: –19.021 dB
2.0 GHz
4: –19.468 dB
2.5 GHz
5: –24.914 dB
3.0 GHz
40
Input Return Loss RLin (dB)
1: –28.279 dB
1.0 GHz
2: –22.334 dB
1.5 GHz
3: –19.341 dB
2.0 GHz
4: –19.843 dB
2.5 GHz
5: –24.355 dB
3.0 GHz
40
30
20
10
0
–10
–20
–30
1
2
3
4
2.0
2.5
–40
–50
0.5
3.5
1.0
1.5
5
3.0
3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
50
1: –30.808 dB
1.0 GHz
2: –22.826 dB
1.5 GHz
3: –19.596 dB
2.0 GHz
4: –19.41 dB
2.5 GHz
5: –22.554 dB
3.0 GHz
40
30
20
10
0
–10
–20
–30
1
2
3
4
5
–40
–50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
50
Output Return Loss RLout (dB)
Input Return Loss RLin (dB)
20
–30
50
Output Return Loss RLout (dB)
1: –29.12 dB
1.0 GHz
2: –27.81 dB
1.5 GHz
3: –27.54 dB
2.0 GHz
4: –26.56 dB
2.5 GHz
5: –24.88 dB
3.0 GHz
30
–40
–50
0.5
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
40
Isolation ISL (dB)
1: –29.853 dB
1.0 GHz
2: –22.191 dB
1.5 GHz
3: –18.863 dB
2.0 GHz
4: –18.563 dB
2.5 GHz
5: –23.874 dB
3.0 GHz
40
30
20
10
0
–10
–20
–30
1
2
3
4
2.0
2.5
–40
–50
0.5
1.0
1.5
5
3.0
3.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 8 of 12
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μPG2214TB
OUTPUT POWER vs. INPUT POWER
Output Power Pout (dBm)
30
f = 2 GHz
25
20
15
10
5
10 12
14
16
18 20
22 24
26 28
30
Input Power Pin (dBm)
Remark The graph indicate nominal characteristics.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 9 of 12
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μPG2214TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
Page 10 of 12
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μPG2214TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
: 260°C or below
Time at temperature of 220°C or higher
: 60 seconds or less
Maximum number of reflow processes
: 3 times
Peak temperature (package surface temperature)
: 215°C or below
Time at peak temperature
Preheating time at 120 to 180° C
Maximum chlorine content of rosin flux (% mass)
VPS
Time at temperature of 200°C or higher
Preheating time at 120 to 150° C
: 10 seconds or less
: 0.2%(Wt.) or below
: 25 to 40 seconds
VP215
: 30 to 60 seconds
: 3 times
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
IR260
: 120±30 seconds
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Wave Soldering
Condition Symbol
: 0.2%(Wt.) or below
: 10 seconds or less
WS260
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Peak temperature (pin temperature)
: 350°C or below
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Partial Heating
Soldering time (per side of device)
: 0.2%(Wt.) or below
: 3 seconds or less
HS350
Caution Do not use different soldering methods together (except for partial heating).
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 11 of 12
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μPG2214TB
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 12 of 12
μPG2214TB Data Sheet
Revision History
Rev.
Date
Description
Summary
Page
1.00
Mar 10, 2004
–
2.00
Apr 12, 2004
pp.3,4
3.00
Oct 20, 2004
p.1
Modification of ORDERING INFORMATION
pp.7 to 9
Addition of TYPICAL CHARACTERISTICS
p.1
Modification of ORDERING INFORMATION
p.6
Modification of ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON
EVALUATION BOARD
p.8
Modification of TYPICAL CHARACTERISTICS
4.00
Sep 10, 2012
First edition issued
Modification of ELECTRICAL CHARACTERISTICS
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regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
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For a complete list of sales offices, representatives and distributors,
Please visit our website: www.cel.com/contactus
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