UPG2214TK-EVAL-A

NEC XXXXXXXXXX P R O D U C T S b y A P P L I C AT I O N About CEL CEL ( California Eastern Laboratories ) is an engineering, sales and marketing company focused on RF Semiconductors, Optical Semiconductors and Wireless Connectivity Solutions. Front End Components Up to 6GHz Applications 2 LNAs for 2 to 8GHz Applications 3 LNBs for 12 to 20GHz Applications 3 P R O D U C T S P E C I F I C AT I O N S RF Switch ICs SPDTs (Single Pole Double Throw) 4 SP3Ts (Single Pole Triple Throw) 5 various RF, Wireless and Optical markets. With over 55 years DPDTs (Double Pole Double Throw) 5 experience in high frequency design, customer support and GaAs FETs CEL serves designers, OEMs and contract manufacturers in fulfillment, CEL is ide­ally positioned to provide its customers with a stable supply of products to meet their specific needs. CEL maintains extensive inventories and provides engineering and applications assistance at its technical centers in Santa Clara, CA., Buffalo Grove, IL and Lafayette, 5 Low Noise GaAs FETs, 1 to 20GHz Silicon MOSFET Devices RF Power LD-MOSFETs 6 MOSFET for Microphone Impedance Conversion 6 Silicon Bipolar Transistors Single Transistors 7 Twin Transistors 8 CO. The company supports customers through sales offices, Silicon RFICs sales representatives and distributors in numerous locations. 3V Silicon MMIC Amplifiers 8 5V Silicon MMIC Amplifiers 9 Frequency Upconverters 9 Frequency Downconverters 9 Package Dimensions 10 CEL Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054 Tel: (408) 919-2500 www.cel.com 1 UPG2253T6S Front End IC Power Up to 6 GHz Applications Front End Components Amplifiers Wi-Fi • Bluetooth • ZigBee • Automated Meter Reading • Mesh & Home Area Networks • ISM Band Applications LNAs IN Transceiver High/Medium Power RFIC Switches (SPDT, SP3T or DPDT) OUT Power Amplifiers Low Power RFIC Switches RFIC Switches (additional P/Ns available, see page 4) 450 MHz 915 MHz 2.4 GHz 6 GHz CG2163X3 SPDT, High Power and High Isolation for WLAN 4 4 CG2176X3 SPDT, High Power & High Isolation Absorptive Dual Band Switch 4 4 CG2179M2 SPDT, Low cost , Insertion Loss: 0.45dB @2.5GHz CG2185X2 SPDT, for Dual Band WLAN, Insertion Loss: 0.4dB @ 6GHz, small 5 - 6package GHz CG2214M6 2.4 GHz SPDT, Insertion Loss: 0.35GHz @ 2.5GHz, Isolation = 25 @ 2.5GHz CG2415M6 SPDT, Dual Band High Power for WLAN CG2430X1 SP3T, Insertion Loss: 0.60dB @ 6GHz, Isolation = 25dB @ 6GHz UPG2162T5N DPDT, Insertion Loss: 0.85dB @ 6 GHz, 27 dB Isolation @ 6GHz UPG2163T5N SPDT, 0.5-8GHz, Insertion Loss: 0.4dB @ 2.4GHz, 0.5 dB @ 6 GHz SPDT, SP3T or DPDT UPG2164T5N 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Chipset Transceiver 4 2.4 GHz 4 5 - 6 GHz RFIC Switches 4 DPDT, Diversity/ Transfer Switch (two selectable RF paths on) 4 UPG2176T5N SPDT, 2.4 – 6 GHz, Insertion Loss: 0.5dB @ 2.4GHz, internal terminations UPG2406TK SPDT, 1.8 or 2.7V control voltage, 0.50 dB Insertion Loss @ 2.5GHz 4 4 4 UPG2408TB / TK SPDT, 3V, 0.50dB Insertion Loss, SOT-363 and SMD Packages 4 4 4 UPG2409TB / T6X SPDT, High Power wide bandwidth, SOT-363 / TSON packages 4 4 4 UPG2415TK / T6X SPDT, for Dual Band WLAN, low insertion loss for Access Point applications 4 4 4 UPG2422TK SPDT,for Dual Band WLAN, 1.8-5.3V control voltage range 4 4 4 2.4 GHz 6 GHz NE5550234 +33dBm, 2W, 7.5V LDMOS FET 4 4 NE5550979A +39.5dBm, 9W, 7.5V LD MOSFET 4 4 NE664M04 +26dBm, 3.6V Silicon Discrete 4 4 4 NE677M04 +15dBm, 3.0 V Silicon Discrete 4 4 4 NE678M04 +18dBm, 3.0 V Silicon Discrete 4 4 4 NE662M04 Silicon Discrete, NF = 1.1, Ga = 16.0, OIP3 = +22dBm @ 2GHz NE3508M04 GaAs FET, NF = 0.45, Ga = 14.0, OIP3 = +31dBm @ 2GHz 4 4 NE3509M04 GaAs FET, NF = 0.40, Ga = 17.5, OIP3 = +22dBm @ 2GHz 4 4 Power Amplifier Transistors (additional P/Ns available, see page 7 & 9) Low Noise Amplifier Transistors 2 T6X only 4 450 MHz 450 MHz www.cel.com/rf 4 915 MHz 915 MHz 4 2.4 GHz T6X only 6 GHz 4 Receiver IC RFIC LNA Low Loss Pre-Filter LNAs for 2 to 8GHz Applications High Rejection Post-Filter Tuner / Receiver FIRST STAGE Filter NE662M04 NE662M04 NE3509M04 NE3508M04 NE3510M04 Part Number Description THIRD STAGE SECOND STAGE NE662M04 NE3508M04 NF (dB) Gain (dB) P1dB (dBm) Package NE662M04 Silicon Bipolar Transistor 1.1 @ 2.0 GHz 16.0 @ 2.0 GHz +11.0 M04 NE3508M04 GaAs HJ-FET 0.45 @ 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 GHz +14.0 M04 NE3510M04 GaAs HJ-FET 0.35 @ 2.0 GHz 19.0 @ 2.0 GHz +12.0 M04 4 (See data tables for additional specifications) LNBs for 12 to 20GHz Applications 20GHz LNB 12GHz LNB 1st 2nd 1st 2nd 3rd CE3503M4 CE3512K2 CE3503M4 CE3520K3 CE3521M4 CE3521M4 Conditions Part Number NF TYP (dB) Ga TYP (dB) Freq. (GHz) VDS (V) ID (mA) KU Band 12GHz CE3503M4 CE3512K2 0.45 0.30 13.2 13.7 12 12 2 2 10 10 K Band 20GHz CE3520K3 CE3521M4 0.55 0.70 13.8 11.9 20 20 2 2 10 10 (See data tables for additional specifications) www.cel.com/rf 3 RF Switch ICs SPDTs (Single Pole Double Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Frequency (GHz, max) Control Voltages (V) Insertion Loss (dB) Isolation (dB) Input Power @ 0.1 dB compression point (dBm) Input Power @ 1.0 dB compression point (dBm) CG2163X3 6.0 1.8, 3.0, 5.0 0.40 @ 2.5GHz 0.50 @ 6GHz 40 @ 2.5GHz 31 @ 6GHz – CG2176X3 5.85 1.8, 3.0, 5.0 0.45 @ 2.5GHz 30 @ 2.5GHz 0.50 @ 3.8GHz 25 @ 3.8GHz 0.55 @ 5.85GHz 22 @ 5.85GHz CG2179M2 3.0 1.8, 3.0, 5.0 0.45 @ 2.5GHz CG2185X2 6.0 1.8, 3.0, 5.0 CG2214M6 3.0 CG2415M6 Part Number Pkg. Code1 Description +33 @ 2.5GHz +32 @ 6GHz X3 Highest Isolation, great 2.4 and 6GHz performance – – X3 Absorptive, Highest Power Switch 26 @ 2.5GHz +30 @ 3GHz – M2 Low Cost General Purpose SPDT 0.35 @ 2.5GHz 0.40 @ 6GHz 28 @ 2.5GHz 26 @ 6GHz +29 @ 2.5GHz +29 @ 6GHz +32 @ 2.5GHz +32 @ 6GHz X2 SPDT specified to 6GHz with a very small & thin package 1.8, 3.0, 5.0 0.35 @ 2.5GHz 25 @ 2.5GHz +30 @ 3GHz – M6 General Purpose SPDT 6.0 1.8, 3.0, 5.3 0.35 @ 2.5GHz 0.45 @ 6GHz 32 @ 2.5GHz 26 @ 6GH +31 @ 2.5GHz +31 @ 6GHz – M6 High Power SPDT for WLAN Access Point, small size package UPD5713TK 2.5 1.8, 2.8, 3.6 0.95 @ 2.5GHz 22.5 @ 2.5GHz +17 @ 1GHz +21 @ 1GHz TK Single Control (1.8-VDD), small size package, CMOS UPG2009TB 3.0 2.7, 2.8, 3.0 0.40 @ 2.5GHz 25 @ 2.5GHz +34 @ 1GHz – TB High power handling, low insertion loss, high isolation UPG2030TK 3.0 2.7, 2.8, 5.4 0.35 @ 2.5GHz 24 @ 2.5GHz +27 @ 2.5GHz – TK Medium power, small size package UPG2155TB 2.5 2.4, 2.6, 5.0 0.45 @ 2.5GHz 17 @ 2.5GHz +37.5 @ 1.8GHz – TB High power handling, low harmonics, high power switch UPG2163T5N 8.0 2.8, 3.0, 5.0 0.40 @ 2.5GHz 0.50 @ 6GHz 0.90 @ 8GHz 38@ 2.5GHz 30 @ 6GHz 23 @ 8GHz – +31 @ 2.5GHz +29 @ 6GHz T5N High isolation, great 2.4 and 6GHz performance UPG2176T5N 6.0 2.5, 3.0, 5.0 0.45 @ 2.5GHz 0.70 @ 6GHz 27 @ 2.5GHz 21 @ 6GHz – +37 @ 2.5GHz +37 @ 2.85GHz T5N Absorptive, high power and high linearity to 6GHz UPG2214TB 3.0 1.8, 3.0, 5.3 0.35 @ 2.5GHz 26 @ 2.5GHz +23 @ 2.5GHz +27 @ 2.5GHz TB Low insertion loss, high isolation, medium power, 1.8V-5.3V. UPG2214TK 3.0 1.8, 3.0, 5.3 0.35 @ 2.5GHz 26 @ 2.5GHz +23 @ 2.5GHz +27 @ 2.5GHz TK Small size package, low inseriton loss, high isolation, medium power, 1.8V-5.3V. UPG2406TB 3.0 1.8, 2.7, 5.3 0.47 @2.5GHz 17 @ 2.5GHz +29 @ 2.5GHz +30.5 @ 2.5GHz TB General Purpose SPDT UPG2406TK 3.0 1.8, 2.7, 5.3 0.47 @ 2.5GHz 17 @ 2.5GHz +29 @ 2.5GHz +30.5 @ 2.5GHz TK Small size package, cost effective medium power, 1.8V-5.3V UPG2408TB 3.0 2.5, 3.0, 5.3 0.50 @ 2.5GHz 18 @ 2.5GHz +29 @ 2.5GHz – TB Low cost medium power for UHF-3GHz UPG2408TK 3.0 2.5, 3.0, 5.3 0.50 @ 2.5GHz 18 @ 2GHz +29 @ 2.5GHz – TK Small size package, cost effective medium power UPG2409TB 3.8 2.7, 3.0, 5.3 0.45 @ 2.5GHz 26 @ 2.5 GHz +33.5 @ 2.5GHz +35 @ 2.5GHz TB High power SPDT, for Access Points to 3.8GHz UPG2409T6X 6.0 2.7, 3.0, 3.3 0.45@ 2.5GHz 0.65@6GHz 30 @ 2.5 GHz +34 @ 2.5GHz 27 @6 GHz +34 @ 6GHz +36 @ 2.5GHz +36 @ 6GHz T6X High power, for Access Points to 6GHz, 1.5mm QFN package UPG2415TK 6.0 2.7, 3.0, 5.3 0.45 @ 2.5GHz 0.65 @ 6GHz 28 @ 2.5 GHz 26 @6 GHz +31 @ 2.5GHz +31 @ 6GHz +34 @ 2.5GHz +34 @ 6GHz TK High power handling for Access Points to 6GHz, small size package UPG2415T6X 6.0 2.7, 3.0, 3.3 0.45 @ 2.5GHz 0.55 @ 6GHz 28 @ 2.5 GHz +31 @ 2.5GHz 26 @6 GHz +31 @ 6GHz +35 @ 2.5GHz +35 @ 6GHz T6X High power handling for Access Points to 6GHz, 1.5mm QFN package UPG2422TK 6.0 1.8, 3.0, 5.3 0.35 @ 2.5GHz 0.55 @ 6GHz 28 @ 2.5GHz 24 @ 6GHz +31 @ 2.5GHz +31 @ 6GHz TK Low cost 6GHz SPDT, medium power, small size package, low inseriton loss, high isolation, 1.8V-5.3V +28 @ 2.5GHz +28 @ 6GHz Notes: 1. See Package Dimensions on page 10 4 www.cel.com/rf RF Switch ICs continued SP3Ts (Single Pole Triple Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Part Number 1 CG2430X1 Frequency (GHz, max) Control Voltages (V) Insertion Loss (dB) Isolation (dB) 6.0 1.8, 3.0, 5.0 0.50 @ 2.5GHz 0.60 @ 6GHz 28 @ 2.5GHz 25 @ 6GHz Input Power @0.1 dB compression point (dBm) Input Power @1.0 dB compression point (dBm) Package Code1 Description X1 SP3T specified to 6GHz with high isolation +28 @ 2.5GHz +31 @ 2.5GHz +28 @ 6GHz +31 @ 6GHz Notes: 1. See Package Dimensions on page 10 DPDTs (Double Pole Double Throw) TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C) Frequency (GHz, max) Control Voltages (V) Insertion Loss (dB) Isolation (dB) Input Power @0.1 dB compression point (dBm) Input Power @1.0 dB compression point (dBm) UPD5738T6N 2.5 1.5, 2.8, 3.6 0.8 @ 1GHz 22 @ 1GHz +15 @ 1GHz UPG2162T5N 6.0 2.8, 3.0, 5.0 0.60 @ 2.5GHz 0.85 @ 6GHz 30 @ 2.5GHz 27 @ 6GHz UPG2164T5N 6.0 2.8, 3.0, 5.0 0.50 @2.5GHz 0.70 @6GHz 25 @ 2.5GHz 17 @ 6GHz Part Number Package Code1 Description +20 @ 1GHz T6N Only one control pin, low frequency operation, CMOS, 1.5V-3.6V – +31 @2.5GHz +29 @6GHz T5N Best isolation of all DPDTs, up to 6GHz operation – +31 @2.5GHz +29 @6GHz T5N Lowest cost, lowest insertion loss DPDT. 6GHz operation. Notes: 1. See Package Dimensions on page 10 GaAs FETs Low Noise GaAs FETs, 1 to 20GHz Typical Specifications @ TA = 25°C Part Number Gate Length (μm) Gate Width (μm) Test Frequency (GHz) CE3503M4 – – CE3512K2 – – NF/GA Bias IDSS Power Bias NFOPT (dB) GA (dB) (mA) VDS (V) IDS (mA) 10 0.45 13.2 47 – 10 0.30 13.7 47 – VDS (V) IDS (mA) 12 2.0 12 2.0 P1dB (dBm) Package Code1 Package Description – – M4 Plastic SMD – – K2 Micro-X Plastic CE3520K3 – – 20 2.0 10 0.55 13.8 40 – – – K3 Micro-X Plastic CE3521M4 – – 20 2.0 10 0.70 11.9 40 – – – M4 Plastic SMD NE3210S01 0.2 160 12 2.0 10 0.35 13.5 40 – – – S01 Plastic SMD NE3503M04 0.2 160 12 2.0 10 0.55 11.5 40 – – – M04 Plastic SMD NE3508M04 0.6 800 2 2.0 10 0.45 14.0 90 3.0 30 +18.0 M04 Plastic SMD NE3509M04 0.6 400 2 2.0 10 0.40 17.5 45 3.0 20 +14.0 M04 Plastic SMD NE3510M04 0.6 280 2 2.0 10 0.35 19.0 70 3.0 30 +12.0 M04 Plastic SMD NE3511S02 0.2 160 12 2.0 10 0.30 13.5 40 – – – S02 Micro-X Plastic NE3512S02 0.2 160 12 2.0 10 0.35 13.5 40 – – – S02 Micro-X Plastic NE3513M04 0.2 160 12 2.0 6 0.45 13.0 30 – – – M04 Plastic SMD NE3514S02 0.2 160 20 2.0 10 0.75 10.0 40 – – – S02 Micro-X Plastic NE3515S02 0.2 200 12 2.0 10 0.3 12.5 60 3.0 25 +14.0 S02 Micro-X Plastic NE3516S02 0.2 160 12 2.0 10 0.35 14.0 30 – – – S02 Micro-X Plastic NE3517S03 0.2 160 20 2.0 10 0.70 13.5 40 – – – S03 Micro-X Plastic NE3520S03 – 160 20 2.0 10 0.65 13.5 40 – – – S03 Micro-X Plastic NE3521M04 – – 20 2.0 10 0.85 11 45 – – – M04 Plastic SMD NE4210S01 0.2 160 12 2.0 10 0.50 13.0 40 – – – S01 Plastic SMD Notes: 1. See Package Dimensions on page 10 www.cel.com/rf 5 Silicon MOSFET Devices RF Power LD-MOSFETs Typical Specifications @ TC = 25°C Test Conditions Part Number POUT (dBm) TYP Linear Gain (dB) TYP Freq (GHz) PIN (dBm) VDS (V) IDSQ (mA) Package Code1 Package Description NE5531079A +40.0 20.5 0.46 +25 7.5 200 79A Plastic SMD Plastic SMD NE55410GR +40.4 25 2.1 +16 28 120 GR NE5550234 +33 +32.2 23.5 18.3 0.46 0.90 +15 +17 7.5 7.5 40 40 34 Plastic SMD NE5550279A +33 22.5 0.46 +15 7.5 40 79A Plastic SMD NE5550779A +38.5 +37.4 22 17 0.46 0.90 +25 +27 7.5 7.5 140 140 79A Plastic SMD NE5550979A +39.5 +38.6 22 16 0.46 0.90 +25 +27 7.5 7.5 200 200 79A Plastic SMD Notes: 1. See Package Dimensions on page 10 MOSFET for Microphone Impedance Conversion Part Number Supply Voltage (V) Circuit Current (μA) Input Capacitance (pF) Voltage Gain (dB) Output Noise Voltage (dBV) Total Harmonic Distortion (%) HBM ESD (KV) Package Code1 NE5820M53 2 85 1.5 -3 -114 0.1 >8 M53 Notes: 1. See Package Dimensions on page 10 6 www.cel.com/rf Silicon Bipolar Transistors Single Transistors Part Number JEITA1 Part Number NPN /PNP fT TYP (GHz) Test Freq (GHz) Test VCE (V) NF TYP (dB) MAG TYP (dB) hFE (TYP) VCEO MAX (V) Ic MAX (mA) Package2 Type NE202930 NA NPN 11 1 5 1.5 15 140 6 100 30 / SOT-323 NE46134 2SC4536 NPN 5.3 1 10 2 9 120 15 250 34 / SOT-89 NE461M02 2SC5337 NPN 5.3 1 10 2 10 120 15 250 M02 / SOT-89 NE46234 2SC4703 NPN 6 1 5 2.3 – 150 12 150 34 / SOT-89 NE462M02 2SC5338 NPN 6 1 5 2.3 – 150 12 150 M02 / SOT-89 NE66219 2SC5606 NPN 21 2 2 1.2 14 80 3.3 35 19 / SOT-523 NE662M04 2SC5508 NPN 25 2 2 1.1 19 70 3.3 35 M04 / SOT-343F NE663M04 2SC5509 NPN 15 2 2 1.2 14 70 3.3 100 M04 / SOT-343F NE664M04 2SC5754 NPN 20 2 3 – 12 60 5 500 M04 / SOT-343F NE67718 2SC5750 NPN 15 2 3 1.7 15 120 6 50 18 / SOT-343 NE67739 2SC5454 NPN 14.5 2 3 1.5 14 110 6 50 39 / SOT-143 NE677M04 2SC5751 NPN 15 2 3 1.7 16 120 6 50 M04 / SOT-343F NE67818 2SC5752 NPN 12 2 3 1.7 13 120 6 100 18 / SOT-343 NE67839 2SC5455 NPN 12 2 3 1.5 14 110 6 100 39 / SOT-143 NE678M04 2SC5753 NPN 12 2 3 1.7 13.5 120 6 100 M04 / SOT-343F NE68018 2SC5013 NPN 10 2 6 1.8 13 100 10 35 18 / SOT-343 NE68019 2SC5008 NPN 8 2 3 1.9 11.5 120 10 35 19 / SOT-523 NE68030 2SC4228 NPN 8 2 3 1.9 – 100 10 35 30 / SOT-323 NE68033 2SC3585 NPN 10 2 6 1.8 10 100 10 35 33 / SOT-23 NE68039 2SC4095 NPN 10 2 6 1.8 12 100 10 35 39 / SOT-143 NE68118 2SC5012 NPN 9 1 8 1.2 18 100 10 65 18 / SOT-343 NE68119 2SC5007 NPN 7 1 3 1.4 16.5 120 10 65 19 / SOT-523 NE68130 2SC4227 NPN 7 1 3 1.4 13 140 10 65 30 / SOT-323 NE68133 2SC3583 NPN 9 1 8 1.2 15 100 10 65 33 / SOT-23 NE68139 2SC4094 NPN 9 1 8 1.2 17 150 10 65 39 / SOT-143 NE68518 2SC5015 NPN 12 2 3 1.5 13 110 6 30 18 / SOT-343 NE68519 2SC5010 NPN 12 2 3 1.5 11 110 6 30 19 / SOT-523 NE68539 2SC4957 NPN 12 2 3 1.5 – 110 6 30 39 / SOT-143 NE85618 2SC5011 NPN 6.5 1 10 1.1 16 120 12 100 18 / SOT-343 NE85619 2SC5006 NPN 4.5 1 3 1.2 12.5 120 12 100 19 / SOT-523 NE85630 2SC4226 NPN 4.5 1 3 1.2 – 110 12 100 30 / SOT-323 NE85633 2SC3356 NPN 7 1 10 1.1 13 120 12 100 33 / SOT-23 NE85634 2SC3357 NPN 6.5 1 10 1.8 10 120 12 100 34 / SOT-89 NE85639 2SC4093 NPN 7 1 10 1.1 14.2 120 12 100 39 / SOT-143 NE856M02 2SC5336 NPN 6.5 1 10 1.1 13.5 120 12 100 M02 / SOT-89 NE97733 2SA1977 PNP 8.5 1 -8 1.5 – 60 -12 -50 33 / SOT-23 NE97833 2SA1978 PNP 5.5 1 -10 2 – 40 -12 -50 33 / SOT-23 Notes: 1. JEITA ( Japan Electronics and Information Technology Association ) equivalent part number 2. See Package Dimensions on page 10 www.cel.com/rf 7 Silicon Bipolar Transistors continued Twin Transistors TEST NF/GA f VCE (GHz) (V) Part Number NF/GA IC (mA) NF TYP (dB) GA TYP (dB) MAG TYP (dB) VCE (V) IC (mA) TYP (dB) fT TYP (GHz) hFE TYP IC MAX (mA) Die Pkg. Code1 Package Style |S21E | UPA800T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 2 each NE680 T SOT-363 UPA801T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363 UPA802T 1.0 3 7 1.4 14.0 16.0 3 7 12.0 7.0 100 65 2 each NE681 T SOT-363 UPA806T 2.0 3 3 1.5 7.5 11.0 3 10 8.5 12.0 110 30 2 each NE685 T SOT-363 UPA810T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363 UPA811T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 2 each NE680 T SOT-363 UPA812T 1.0 3 7 1.4 14 16.0 3 7 12.0 7 100 65 2 each NE681 T SOT-363 Notes: 1. See Package Dimensions on page 10 Silicon RFICs 3V Silicon MMIC Amplifiers Typical Frequency Range @ 3dB down (MHz) Part Number ELECTRICAL CHARACTERISTICS5 (TA = 25°C) VCC (V) ICC (mA) NF (dB) Gain (dB) RLIN (dB) RLOUT (dB) P1dB ISOL (dBm) (dB) Package Code6 Package Style MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP 5 7.5 10 6.0 9 12 14 11 5.5 -3.0 38 TB SOT-363 UPC2745TB 1 2700 3 UPC2746TB 1 1500 3 5 7.5 10 4.0 16 19 21 13 8.5 -3.7 45 TB SOT-363 UPC2748TB 2 1500 3 4.5 6 8 2.8 16 19 21 11.5 8.5 -8.5 40 TB SOT-363 UPC2749TB 3 2900 3 4 6 8 4 13 16 18.5 10 13 -12.5 30 TB SOT-363 UPC2762TB 3 2900 3 – 27 35 7.0 11.5 15.5 17.5 8.5 12 +7 25 TB SOT-363 UPC2771TB2 2200 3 – 36 45 6 19 21 24 14 9 +11.5 30 TB SOT-363 3 UPC8178TK 2700 3 1.4 1.9 2.4 5.5 9.0 11.0 13.5 8 – -8.0 41 TK 6 pin Recessed Lead 3 Note 4 3 2.9 4.0 5.4 5.0 13.0 15.5 17.5 7 – 0.5 42 TK 6 pin Recessed Lead UPC8179TK Notes: 1. f = 500 MHz test condition 2. f = 900 MHz test condition 3. f = 1900 MHz test condition 6. See Package Dimensions on page 10 8 4. 100 – 2400 MHz with output port matching www.cel.com/rf 5. ZL = 50 Ω for all Electrical Characteristics Silicon RFICs continued 5V Silicon MMIC Amplifiers Typical Frequency Range @ 3dB down (MHz) Part Number ELECTRICAL CHARACTERISTICS3 (TA = 25°C) VCC (V) ICC (mA) MIN TYP NF (dB) Gain (dB) RLIN (dB) RLOUT (dB) P1dB ISOL (dBm) (dB) MAX TYP MIN TYP MAX TYP TYP TYP TYP Package Code4 Package Style UPC2708TB 2 2900 5 20 26 33 6.5 13 15 18.5 11 20 +9.2 23 TB SOT-363 UPC2709TB 2 2300 5 19 25 32 5.0 21 23 26.5 10 10 +8.7 31 TB SOT-363 UPC2710TB 1 1000 5 16 22 29 3.5 30 33 36.5 6 12 +10.8 39 TB SOT-363 UPC3223TB 2 3200 5 15 19 24 4.5 20.5 23 22.5 12 12 +6.5 33 TB SOT-363 UPC3224TB 2 3200 5 7.0 9.0 12.0 4.3 19 21.5 24 12 17 -3.5 40 TB SOT-363 OIP3 Package Code4 Package Style Notes: 1. f = 500 MHz test condition 2. f = 1000 MHz test condition 3. ZL = 50 Ω for all Electrical Characteristics 4. See Package Dimensions on page 10 Frequency Upconverters ELECTRICAL CHARACTERISTICS (TA = 25°C) Part Number IF Input Frequency Range @3 dB Down (MHz) TYP TYP UPC8106TB 1 50-400 400-2000 3.0 UPC8172TB 2 50-400 800-2500 3.0 RF Output Frequency Range (MHz) Notes: 1. RF = 900 MHz, LO = 660 MHz, PLO = -5 dBm VCC (V) Conversion Gain (dB) PSAT 3 (dBm) Noise Figure (dB) TYP TYP TYP TYP 9.0 10.0 -2.0 8.5 +5.5 TB SOT-363 9.0 8.5 0.0 10.4 +6.0 TB SOT-363 ICC (mA) 2. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dBm 3. PIN = 0 dBm 4. See Package Dimensions on page 10 Frequency Downconverters ELECTRICAL CHARACTERISTICS (TA = 25°C) Part Number RF Input Frequency Range @3 dB Down (MHz) IF Output Frequency Range @3 dB Down (MHz) UPC2756TB 100-2000 10-300 3.0 UPC2757TB 100-2000 20-300 3.0 1 UPC2758TB 100-2000 20-300 UPC8112TB1 800-2000 100-300 TYP 1 Note: 1. AGC Amp and Mixer Block only ICC (mA) Conversion Gain (dB) PSAT (dBm) Noise Figure (dB) TYP TYP TYP TYP 5.9 14 -12 5.6 13 -8 3.0 11 17 3.0 8.5 13 VCC (V) TYP Package Code2 Package Style 13 TB SOT-363 13 TB SOT-363 -4 13 TB SOT-363 -3 11.2 TB SOT-363 2. See Package Dimensions on page 10 www.cel.com/rf 9 Package Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. 18 Package (1.25 x 2.0 x 0.9) Top View Side View 34 Package (2.5 x 4.5 x 1.5) Bottom View Side View M02 Package (2.45 x 4.5 x 1.5) Bottom View Side View K2 / K3 / S02 / S03 Package Side View Top View T6N / T6X Package Top View 10 (2.6 x 2.6 x 1.5) Side View (1.5 x 1.5 x 0.37) Bottom View 19 Package (0.8 x 1.6 x 0.75) Top View Side View 39 Package (1.5 x 2.9 x 1.1) Top View Side View M4 / M04 Package Side View Top View T / TB / M2 Package (1.25 x 2.0 x 0.9) Side View Top View X1 Package Top View (1.25 x 2.0 x 0.6) (1.5 x 1.5 x 0.37) Side View Bottom View 30 Package (1.25 x 2.0 x 0.9) Side View Top View 79A Package Top View Side View M53 Package Top View Top View Side View X2 Package Top View www.cel.com/rf GR Package Bottom View Top View (1.0 x 1.2 x 0.33) S01 Package (1.1 x 1.5 x 0.55) Bottom View (1.0 x 1.0 x 0.37) Side View Bottom View (1.5 x 2.9 x 1.4) Top View (4.2 x 4.4 x 0.9) Side View M6 / TK Package 33 Package Side View (5.2 x 5.5 x 0.9) Side View (2.0 x 2.0 x 1.5) Side View Top View T5N / X3 Package Top View Bottom View Side View (1.5 x 1.5 x 0.37) Bottom View Contact Us 4590 Patrick Henry Drive Santa Clara, CA 95054 Tel: (408) 919-2500 E-mail: rfw@cel.com Learn more www.cel.com/rf © 2016 California Eastern Laboratories 05.2016 / 5C For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus