1N5258B

1N5258B

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    1N5258B - SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE - Central Semiconductor C...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5258B 数据手册
1N5221B THRU 1N5281B SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5221B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial, commercial, entertainment and computer applications. DO-35 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature VZ Tolerance: Part number with “B” suffix VZ Tolerance: Part number with “C” suffix VZ Tolerance: Part number with “D” suffix SYMBOL PD TJ, Tstg 500 -65 to +200 ±5 ±2 ±1 UNITS mW °C % % % ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) ZENER VOLTAGE TYPE MIN V 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 2.280 2.375 2.565 2.660 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 5.700 5.890 6.460 7.125 7.790 8.265 8.645 9.500 10.45 11.40 12.35 13.30 14.25 15.20 VZ @ IZT NOM V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 MAX V 2.520 2.625 2.835 2.940 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.300 6.510 7.140 7.875 8.610 9.135 9.555 10.50 11.55 12.60 13.65 14.70 15.75 16.80 TEST CURRENT IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 MAXIMUM ZENER IMPEDANCE ZZT @ IZT Ω 30 30 30 30 29 28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 30 13 15 16 17 ZZK @ IZK Ω mA 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 MAXIMUM REVERSE CURRENT IR μA 100 100 75 75 50 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0 1.0 0.5 0.1 0.1 0.1 @ VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 MAXIMUM TEMPERATURE COEFFICIENT ΘVZ %/°C -0.085 -0.085 -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 ±0.055 ±0.030 ±0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 R2 (20-October 2011) 1N5221B THRU 1N5281B SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) ZENER VOLTAGE TYPE MIN V 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B 1N5268B 1N5269B 1N5270B 1N5271B 1N5272B 1N5273B 1N5274B 1N5275B 1N5276B 1N5277B 1N5278B 1N5279B 1N5280B 1N5281B 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 57.00 58.90 64.60 71.25 77.90 82.65 86.45 95.00 104.5 114.0 123.5 133.0 142.5 152.0 161.5 171.0 180.5 190.0 VZ @ IZT NOM V 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 110 120 130 140 150 160 170 180 190 200 MAX V 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 63.00 65.10 71.40 78.75 86.10 91.35 95.55 105.0 115.5 126.0 136.5 147.0 157.5 168.0 178.5 189.0 199.5 210.0 TEST CURRENT IZT mA 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 1.3 1.1 1.0 0.95 0.90 0.85 0.80 0.74 0.68 0.66 0.65 MAXIMUM ZENER IMPEDANCE ZZT @ IZT Ω 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 370 400 500 750 900 1100 1300 1500 1700 1900 2200 2400 2500 ZZK @ IZK Ω mA 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 2600 3000 4000 4500 4500 5000 5500 5500 6000 6500 7000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 MAXIMUM REVERSE CURRENT IR μA 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 @ VR V 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 68 69 76 84 91 99 106 114 122 129 137 144 152 MAXIMUM TEMPERATURE COEFFICIENT ΘVZ %/°C +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 +0.098 +0.099 +0.099 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 DO-35 CASE - MECHANICAL OUTLINE C B A D D R2 (20-October 2011) w w w. c e n t r a l s e m i . c o m
1N5258B
物料型号: - 型号范围从1N5221B至1N5281B,覆盖2.4伏至200伏的电压范围。

器件简介: - 这些器件是CENTRAL SEMICONDUCTOR生产的硅齐纳二极管,设计用于工业、商业、娱乐和计算机应用中的电压调节。

引脚分配: - 该系列二极管采用DO-35封装,这是一种常见的小尺寸封装,具有两个引脚。

参数特性: - 最大功耗为500mW。 - 工作和存储结温范围为-65至+200°C。 - 齐纳电压公差有±5%、±2%和±1%三种,分别对应后缀为“B”、“C”和“D”的型号。

功能详解: - 这些二极管的主要功能是电压稳定。在规定的测试电流下,它们能够维持一个稳定的电压值,同时具有最大齐纳阻抗和反向电流的限制。

应用信息: - 适用于需要电压稳定的场合,如电源、信号处理等。

封装信息: - 封装类型为DO-35,具体尺寸如下: - A(最小):0.018英寸/0.46毫米,A(最大):0.022英寸/0.56毫米 - B(最小):0.120英寸/3.05毫米,B(最大):0.200英寸/5.08毫米 - C(最小):0.060英寸/1.52毫米,C(最大):0.090英寸/2.29毫米 - D:1.000英寸/25.40毫米
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