1N5306

1N5306

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    1N5306 - SILICON CURRENT LIMITING DIODE DESCRIPTION: - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5306 数据手册
1N5283 THRU 1N5314 SILICON CURRENT LIMITING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double plug case which provides many benefits to the user, including space savings and improved thermal characteristics. Special selections of IP (regulator current) are available for critical applications. DO-35 CASE FEATURES: • High Reliability • Special Selections Available • Superior Lot To Lot Consistency • Surface Mount Devices Available SYMBOL POV PD TJ, Tstg UNITS V mW °C MAXIMUM RATINGS: (TL=75°C) Peak Operating Voltage Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) Regulator Current (Note 1) Type MIN mA 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5294 1N5295 1N5296 1N5297 1N5298 0.198 0.216 0.243 0.270 0.297 0.351 0.387 0.423 0.504 0.558 0.612 0.675 0.738 0.819 0.900 0.990 IP @ VT=25V NOM mA 0.22 0.24 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75 0.82 0.91 1.00 1.10 MAX mA 0.242 0.264 0.297 0.330 0.363 0.429 0.473 0.517 0.616 0.682 0.748 0.825 0.902 1.001 1.10 1.21 100 600 -65 to +200 Minimum Dynamic Impedance ZT @ VT=25V MΩ 25 19 14 9.0 6.6 4.1 3.3 2.7 1.90 1.55 1.35 1.15 1.00 0.88 0.80 0.70 Minimum Knee Impedance ZK @ VK=6.0V MΩ 2.75 2.35 1.95 1.60 1.35 1.00 0.87 0.75 0.56 0.47 0.40 0.335 0.29 0.24 0.205 0.18 Maximum Limiting Voltage VL @ IL=0.8 x IP MIN V 1.0 1.0 1.0 1.0 1.0 1.05 1.05 1.05 1.10 1.13 1.15 1.20 1.25 1.29 1.35 1.40 Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA) R3 (24-May 2010) 1N5283 THRU 1N5314 SILICON CURRENT LIMITING DIODE ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) Regulator Current (Note 1) Type MIN mA 1N5299 1N5300 1N5301 1N5302 1N5303 1N5304 1N5305 1N5306 1N5307 1N5308 1N5309 1N5310 1N5311 1N5312 1N5313 1N5314 1.08 1.17 1.26 1.35 1.44 1.62 1.80 1.98 2.16 2.43 2.70 2.97 3.24 3.51 3.87 4.23 IP @ VT=25V NOM mA 1.20 1.30 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.70 3.00 3.30 3.60 3.90 4.30 4.70 MAX mA 1.32 1.43 1.54 1.65 1.76 1.98 2.20 2.42 2.64 2.97 3.30 3.63 3.96 4.29 4.73 5.17 Minimum Dynamic Impedance ZT @ VT=25V MΩ 0.640 0.580 0.540 0.510 0.475 0.420 0.395 0.370 0.345 0.320 0.300 0.280 0.265 0.255 0.245 0.235 Minimum Knee Impedance ZK @ VK=6.0V MΩ 0.155 0.135 0.115 0.105 0.092 0.074 0.061 0.052 0.044 0.035 0.029 0.024 0.020 0.017 0.014 0.012 Maximum Limiting Voltage VL @ IL=0.8 x IP MIN V 1.45 1.50 1.55 1.60 1.65 1.75 1.85 1.95 2.00 2.15 2.25 2.35 2.50 2.60 2.75 2.90 DO-35 CASE - MECHANICAL OUTLINE R3 (24-May 2010) w w w. c e n t r a l s e m i . c o m
1N5306
物料型号: - 1N5283至1N5314

器件简介: - 这些器件是硅场效应电流调节二极管,用于需要在宽电压范围内恒定电流的应用场合。它们制造于成本效益高的DO-35双插封装中,为用户提供了许多优势,包括节省空间和改善热特性。对于关键应用,还提供了IP(调节电流)的特殊选择。

引脚分配: - 根据机械轮廓图,DO-35封装是一个双引脚封装,引脚位于封装的两端。

参数特性: - 最大额定值如下: - 峰值工作电压(PoV):100V - 功率耗散(PD):600mW - 工作和存储结温(stg):-65至+200摄氏度 - 电气特性(Ta=25°C): - 调节电流(Ip@VT=25V)、最小动态阻抗(ZT@V=25V)、最小阈值阻抗(ZK@VK=6.0V)和最大限制电压(VL@l=0.8xIp MIN V)。

功能详解: - 1N5283系列类型的硅场效应电流调节二极管设计用于需要在宽电压范围内恒定电流的应用。这些设备提供许多优势,包括节省空间和改善热特性。

应用信息: - 该文档没有详细说明具体的应用案例,但提到了这些二极管适用于需要恒定电流的应用场合。

封装信息: - 封装为DO-35双插封装,提供了详细的尺寸信息,包括英寸和毫米单位的最小和最大尺寸。
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