2N2221A

2N2221A

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    2N2221A - NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
2N2221A 数据手册
2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC UNITS V V V mA mW W °C °C/W °C/W 75 40 6.0 800 400 1.2 -65 to +200 438 146 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=60V VCB=60V, TA=150°C VCE=60V, VEB=3.0V VEB=3.0V IC=10μA 75 IC=10mA 40 IE=10μA 6.0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA 0.6 IC=500mA, IB=50mA 2N2221A MIN MAX VCE=10V, IC=0.1mA 20 VCE=10V, IC=1.0mA 25 VCE=10V, IC=10mA 35 VCE=10V, IC=10mA, TA=-55°C 15 VCE=10V, IC=150mA 40 120 VCE=1.0V, IC=150mA 20 VCE=10V, IC=500mA 25 - MAX 10 10 10 10 0.3 1.0 1.2 2.0 2N2222A MIN MAX 35 50 75 35 100 300 50 40 - UNITS nA μA nA nA V V V V V V V R3 (30-January 2012) 2N2221A 2N2222A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS fT VCE=20V, IC=20mA, f=100MHz Cob VCB=10V, IE=0, f=100kHz Cib VEB=0.5V, IC=0, f=100kHz hie VCE=10V, IC=1.0mA, f=1.0kHz hie VCE=10V, IC=10mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=10mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=10mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=10mA, f=1.0kHz rb’Cc VCB=10V, IE=20mA, f=31.8MHz NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA ts VCC=30V, IC=150mA, IB1=IB2=15mA tf VCC=30V, IC=150mA, IB1=IB2=15mA 2N2221A MIN MAX 250 8.0 25 1.0 3.5 0.2 1.0 5.0 2.5 30 150 50 300 3.0 15 10 100 150 10 25 225 60 2N2222A MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 UNITS MHz pF pF kΩ kΩ x10-4 x10-4 μS μS ps dB ns ns ns ns TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R3 (30-January 2012) w w w. c e n t r a l s e m i . c o m
2N2221A
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,广泛应用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等多种功能模块。

6. 应用信息:适用于需要高性能处理能力的嵌入式系统,如电机控制、工业自动化等。
2N2221A 价格&库存

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